Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Sn”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

ZTF SN Ia DR2: Improved SN Ia colors through expanded dimensionality with SALT3+

Context. Type Ia supernovae (SNe Ia) are a key probe in modern cosmology, as they can be used to measure luminosity distances at gigaparsec scales. Models of their light curves are used to project heterogeneous observed data onto a common basis for analysis. Aims. The SALT model currently used for SN Ia cosmology describes SNe as having two sources of variability, accounted for by a color parameter c , and a “stretch” parameter x 1 . We extend the model to include an additional parameter we label x 2 , to investigate the cosmological impact of currently unaddressed light-curve variability. Methods. We constructed a new SALT model, that we dub “SALT3+”. This model was trained by an improved version of the SALTshaker code, using training data combining a selection of the second data release of cosmological SNe Ia from the Zwicky Transient Facility and the existing SALT3 training compilation. Results. We find additional, coherent variability in supernova light curves beyond SALT3. Most of this variation can be described as phase-dependent variation in g − r and r − i color curves, correlated with a boost in the height of the secondary maximum in i -band. These behaviors correlate with spectral differences, particularly in line velocity. We find that fits with the existing SALT3 model tend to address this excess variation with the color parameter, leading to less informative measurements of supernova color. We find that neglecting the new parameter in light-curve fits leads to a trend in Hubble residuals with x 2 of 0.039 ± 0.005 mag, representing a potential systematic uncertainty. However, we find no evidence of a bias in current cosmological measurements. Conclusions. We conclude that extended SN Ia light-curve models promise mild improvement in the accuracy of color measurements, and corresponding cosmological precision. However, models with more parameters are unlikely to substantially affect current cosmological results.

Kenworthy, W. D. (ORCID:0000000251535983)↗
DOE OSTI2023

Structural characterization of tin in toothpaste by dynamic nuclear polarization enhanced 119 Sn solid-state NMR spectroscopy

Stannous fluoride (SnF 2 ) is an effective fluoride source and antimicrobial agent that is widely used in commercial toothpaste formulations. The antimicrobial activity of SnF 2 is partly attributed to the presence of Sn(II) ions. However, it is challenging to directly determine the Sn speciation and oxidation state within commercially available toothpaste products due to the low weight loading of SnF 2 (0.454 wt% SnF 2 , 0.34 wt% Sn) and the amorphous, semi-solid nature of the toothpaste. Here, we show that dynamic nuclear polarization (DNP) enables 119 Sn solid-state NMR experiments that can probe the Sn speciation within commercially available toothpaste. Solid-state NMR experiments on SnF 2 and SnF 4 show that 19 F isotropic chemical shift and 119 Sn chemical shift anisotropy (CSA) are highly sensitive to the Sn oxidation state. DNP-enhanced 119 Sn magic-angle turning (MAT) 2D NMR spectra of toothpastes resolve Sn(II) and Sn(IV) by their 119 Sn chemical shift tensor parameters. Fits of DNP-enhanced 1D 1 H → 119 Sn solid-state NMR spectra allow the populations of Sn(II) and Sn(IV) within the toothpastes to be estimated. This analysis reveals that three of the four commercially available toothpastes contained at least 80% Sn(II), whereas one of the toothpaste contained a significantly higher amount of Sn(IV).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

SN 2021adxl: A luminous nearby interacting supernova in an extremely low-metallicity environment

SN 2021adxl is a slowly evolving, luminous, Type IIn supernova with asymmetric emission line profiles, similar to the well-studied SN 2010jl. We present extensive optical, near-ultraviolet, and near-infrared photometry and spectroscopy covering ∼1.5 years post discovery. SN 2021adxl occurred in an unusual environment, atop a vigorously star-forming region that is offset from its host galaxy core. The appearance of Ly α and O II , as well as the compact core, would classify the host of SN 2021adxl as a “Blueberry” galaxy, analogous to higher redshift, low-metallicity, star-forming dwarf “Green Pea” galaxies. Using several abundance indicators, we find a metallicity of the explosion environment of only ∼0.1 Z ⊙ , the lowest reported metallicity for a Type IIn SN environment. SN 2021adxl reaches a peak magnitude of M r ≈ −20.2 mag and since discovery, SN 2021adxl has faded by only ∼4 magnitudes in the r band with a cumulative radiated energy of ∼1.5 × 10 50 erg over 18 months. SN 2021adxl shows strong signs of interaction with a complex circumstellar medium, seen by the detection of X-rays, revealed by the detection of coronal emission lines, and through multi-component hydrogen and helium profiles. In order to further understand this interaction, we model the H α profile using a Monte Carlo electron scattering code. The blueshifted high-velocity component is consistent with emission from a radially thin spherical shell resulting in the broad emission components due to electron scattering. Using the velocity evolution of this emitting shell, we find that the SN ejecta collide with circumstellar material of at least ∼5 M ⊙ assuming a steady-state mass-loss rate of ∼4 − 6 × 10 −3 M ⊙ yr −1 for the first ∼200 days of evolution. SN 2021adxl was last observed to be slowly declining at ∼0.01 mag d −1 , and if this trend continues, SN 2021adxl will remain observable after its current solar conjunction. Continuing the observations of SN 2021adxl may reveal signatures of dust formation or an infrared excess, similar to that seen for SN 2010jl.

Brennan, S. J. (ORCID:0000000313256235)↗
DOE OSTI2025

Controlling structural phases of Sn through lattice engineering

Topology and superconductivity, two distinct phenomena, offer unique insight into quantum properties and their applications in quantum technologies, spintronics, and sustainable energy technologies. Tin (Sn) plays a pivotal role here as an element because of its two structural phases, α-Sn exhibiting topological characteristics and β-Sn showing superconductivity. Here, we demonstrate precise control of these phases in Sn thin films using molecular beam epitaxy with systematically varied lattice parameters of the buffer layer. The Sn films exhibit either β-Sn or α-Sn phases as the buffer layer's lattice constant varies from 6.10 Å to 6.48 Å, spanning the range from GaSb (like InAs) to InSb. Further, the crystal structures of α- and β-Sn films are characterized by x-ray diffraction and confirmed by Raman spectroscopy and scanning transmission electron microscopy. Atomic force microscopy validates the smooth, continuous surface morphology. Electrical transport measurements further verify the phases: resistance drop near 3.7 K for β-Sn superconductivity and Shubnikov-de Haas oscillations for α-Sn topological characteristics. Density functional theory shows that α-Sn is stable under tensile strain and β-Sn under compressive strain, aligning well with experimental findings. Hence, this study introduces a platform controlling Sn phases through lattice engineering, enabling innovative applications in quantum technologies and beyond.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Tiny Sc Allows the Chains to Rattle: Impact of Lu and Y Doping on the Charge-Density Wave in ScV 6 Sn 6

The kagome metals display an intriguing variety of electronic and magnetic phases arising from the connectivity of atoms on a kagome lattice. A growing number of these materials with vanadium–kagome nets host charge–density waves (CDWs) at low temperatures, including ScV 6 Sn 6 , CsV 3 Sb 5 , and V 3 Sb 2 . Curiously, only the Sc version of the RV 6 Sn 6 materials with a HfFe 6 Ge 6 -type structure hosts a CDW (R = Gd–Lu, Y, Sc). In this study, we investigate the role of rare earth size in CDW formation in the RV 6 Sn 6 compounds. Magnetization measurements on our single crystals of (Sc,Lu)V 6 Sn 6 and (Sc,Y)V 6 Sn 6 establish that the CDW is suppressed by substituting Sc by larger Lu or Y. Single-crystal X-ray diffraction reveals that compressible Sn–Sn bonds accommodate the larger rare earth atoms within loosely packed R–Sn–Sn chains without significantly expanding the lattice. We propose that Sc provides extra room in these chains crucial to CDW formation in ScV 6 Sn 6 . Our rattling chain model explains why both physical pressure and substitution by larger rare earth atoms hinder CDW formation despite opposite impacts on lattice size. Here, we emphasize the cooperative effect of pressure and rare earth size by demonstrating that pressure further suppresses the CDW in a Lu-doped ScV 6 Sn 6 crystal. Our model not only addresses why a CDW only forms in the RV 6 Sn 6 materials with tiny Sc but also advances our understanding of why unusual CDWs form in the kagome metals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Smooth, homogeneous, high-purity Nb 3 Sn superconducting RF resonant cavity by seed-free electrochemical synthesis

Abstract Workbench-size particle accelerators, enabled by Nb 3 Sn-based superconducting radio-frequency (SRF) cavities, hold the potential of driving scientific discovery by offering a widely accessible and affordable source of high-energy electrons and x-rays. Thin-film Nb 3 Sn RF superconductors with high quality factors, high operation temperatures, and high-field potentials are critical for these devices. However, surface roughness, non-stoichiometry, and impurities in Nb 3 Sn deposited by conventional Sn-vapor diffusion prevent them from reaching their theoretical capabilities. Here we demonstrate a seed-free electrochemical synthesis that pushes the limit of chemical and physical properties in Nb 3 Sn. Utilization of electrochemical Sn pre-deposits reduces the roughness of converted Nb 3 Sn by five times compared to typical vapor-diffused Nb 3 Sn. Quantitative mappings using chemical and atomic probes confirm improved stoichiometry and minimized impurity concentrations in electrochemically synthesized Nb 3 Sn. We have successfully applied this Nb 3 Sn to the large-scale 1.3 GHz SRF cavity and demonstrated ultra-low BCS surface resistances at multiple operation temperatures, notably lower than vapor-diffused cavities. Our smooth, homogeneous, high-purity Nb 3 Sn provides the route toward high efficiency and high fields for SRF applications under helium-free cryogenic operations.

Physics↗
DOE OSTI2026

Nb 3 Sn coating of SRF cavity by cosputtering from a composite target

Here, we deposited an Nb 3 Sn film on the inner surface of a 2.6 GHz Nb superconducting radio frequency cavity by cosputtering using a composite of Nb and Sn tube targets in a DC cylindrical magnetron sputtering system, followed by the thermal annealing of the coated cavity. An aluminum mockup cavity, replicating a 2.6 GHz Nb SRF cavity geometry, was utilized to optimize deposition parameters, resulting in cosputtered Nb–Sn films with an Sn content of 32–42 at. % on the beam tubes and equator positions. Several annealing conditions were investigated to improve the surface homogeneity of the Nb 3 Sn film. The best cosputtered Nb–Sn film was achieved after annealing at 600 °C for 6 h, followed by annealing at 950 °C for 1 h. The best process was applied to a Nb cavity, which was RF tested in a cryogenic dewar. RF testing of the Nb 3 Sn-coated cavity demonstrated a superconducting transition temperature of 17.78 K. The Nb 3 Sn cavity underwent light Sn recoating, followed by additional RF testing, resulting in the enhancement of the RF performance, primarily due to the improved surface homogeneity of the Nb 3 Sn coating.

Nb3Sn film↗
DOE OSTI2026

Operational stability of mixed Sn–Pb perovskite solar cells: Mechanisms, mitigation strategies, and perspectives

Mixed Sn–Pb perovskites provide the 1.2–1.3 eV narrow-bandgap absorber needed for high efficiency of all perovskite tandems, but their deployment is limited by operational instability under light. This review synthesizes mechanistic origins and recent mitigation strategies for mixed Sn–Pb perovskite solar cells. The oxidation of Sn 2+ to Sn 4+ , often driven by iodine formation under light and bias, is the primary failure pathway; it creates Sn vacancies, self-doping, and nonradiative loss. Surface/grain-boundary defects, halide migration, reactive oxygen species, and interfacial redox at charge-transport layers, along with hole accumulation from poor band alignment, further accelerate Sn–Pb perovskite degradation. Here we survey recent stability advances across additive chemistry, surface and grain-boundary passivation, buried-interface redesign with modified or alternative hole transport layers, and solvent systems that preserve Sn 2+ and correct Sn–Pb speciation for scalable coating. Together, these recent advances have enabled devices to retain 80%–90% output for hundreds to over a thousand hours. Lastly, we provide our perspectives on further improving the operational stability of Sn–Pb perovskite and solar cells.

14 SOLAR ENERGY↗
DOE OSTI2024

A reversible four-electron Sn metal aqueous battery

Sn is a promising metal anode for aqueous batteries, with up to four-electron redox available per atom (903 mAh g −1 Sn ). However, practically harnessing the four-electron Sn(OH) 6 2− /Sn reversibility remains challenging due to limited mechanistic understanding. Here, in this study, we reveal a kinetically asymmetric redox pathway involving a successive four-electron plating and a stepwise 2 + 2 electron stripping through a Sn(OH) 3 − intermediate. The crossover of Sn(OH) 3 − induces a reversible self-discharge that reduces Coulombic efficiency but does not impact cyclability, demonstrated by four-electron Sn-Ni full cells that sustain >800 h of stable cycling. By tuning the ion selectivity of the separator to suppress Sn(OH) 3 − crossover while allowing OH − transport, we further demonstrate high Sn utilization (67%) and high energy density (143.1 Wh L −1 cell). The results provide key understandings of the tradeoffs in engineering reversible multi-electron metal anodes and define a new benchmark for practical energy density that exceeds any Sn-based aqueous batteries to date.

SN anode↗
DOE OSTI2026

Mechanistic origin of solvent-dependent thermal stability in sodiated Sn anodes for sodium-ion batteries

Understanding the thermal stability of high-energy density alloy anodes is critical for the safe deployment of sodium-ion batteries (SIBs). Here, accelerating rate calorimetry (ARC), post-mortem characterizations, and density functional theory (DFT) calculations are combined to understand the thermal reactivity of fully sodiated Sn, Sn-hard carbon (HC) blends, and HC anodes in carbonate- and ether-based electrolytes. ARC measurements show that propylene carbonate (PC) causes earlier self-heating rate (SHR) onset and higher reactivity than tetraethylene glycol dimethyl ether (TEGDME), indicating inferior thermal stability. Sodiated Sn exhibits better thermal stability than sodiated HC, while Sn-HC blends show intermediate behavior that improves with increasing Sn content. Post-ARC analyses reveal desodiation of Na15Sn4 to metallic Sn with particle coalescence, whereas Sn-HC blends and HC retain finer morphologies. PC promotes Sn oxidation to SnO, while TEGDME suppresses oxide formation; NaPF6-containing electrolytes additionally form NaF. DFT calculations show that PC adsorption lowers Na extraction energy and enhances interfacial electronic interactions, facilitating Na release and reductive decomposition. These results establish a direct correlation between solvent-dependent reaction pathways and thermal stability in SIB alloy anodes.

Accelerating rate calorimetry↗
DOE OSTI2024

Layered Sn-Au Thin Films for Increased Electrochemical ATR-SEIRAS Enhancement

Operando electrochemical attenuated total reflection surface-enhanced infrared absorption spectroscopy (EC ATR-SEIRAS) is a valuable method for a fundamental understanding of electrochemical interfaces under real operating conditions. The applicability of this method depends on the ability to tune the optical and catalytic properties of an electrode film, and it thus requires unique optimization for any given material. Motivated by the growing interest in Sn-based electrocatalysts for selective reduction of CO2 to formate species, we investigate several Sn thin-film synthesis routes for the resulting SEIRA signal response. We compare the SEIRA performance of thermally evaporated metallic Sn to a series of Sn-based films on top of a SEIRA-active Au substrate (metallic Sn, oxide-derived metallic Sn, and metal oxide SnOx). Using alkanethiol self-assembled monolayers as a probe, we find that electrodepositing metallic catalyst films on top of SEIRA-active Au substrates yield higher signal relative to thermal evaporation as well as higher signal than the independent SEIRA-active Au underlayer. These observations come despite the fact that thermally evaporated Sn has a significantly higher surface roughness (and thus higher adsorbate population), suggesting specific SEIRA-magnifying effects for the stacked films. Finally, we applied these films to observe the electrochemical conversion of CO2. Differences are observed in spectral features based on the composition of the electrode being either metallic or oxide-derived metallic Sn, implying differences in their respective reaction pathways.

CO2 reduction↗
DOE OSTI2022

Solution Processed Ternary Tin (II) Alloy as Hole–Transport Layer of Sn–Pb Perovskite Solar Cells for Enhanced Efficiency and Stability

Tin-lead (Sn-Pb) narrow bandgap (NBG) perovskites show great potential in both single-junction and all-perovskite tandem solar cells. Sn-Pb perovskite solar cells (PSCs) are still limited by low charge collection efficiency and poor stability. Here, we report a ternary Sn (II) alloy of SnOCl as the hole-transport material (HTM) with a work function of 4.95 eV for Sn-Pb PSCs. The solution processed SnOCl layer has a texture structure which not only reduces the optical loss of the devices but also changes grain growth of Sn-Pb perovskites and boosts the carrier diffusion length to 3.63 μm. The formation of small perovskite grains at the HTM/perovskite interface is suppressed. These result in an almost constant internal quantum efficiency of 96 ± 2% across the absorption spectrum of Sn-Pb perovskites. The SnOCl HTM significantly enhances the stability of Sn-Pb PSCs with 87% of its initial efficiency retained after 1-sun illumination for 1,200 h, and keep 85% efficiency under 85°C thermal stress for 1,500 h. Furthermore, the hybrid HTM further improve the stabilized efficiencies of single-function Sn-Pb PSCs and all-perovskite tandem solar cells to 23.2% and 25.9%, respectively. This discovery opens an avenue to the multi-component metal alloys as HTM in PSCs.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001)

Germanium–tin (GeSn) alloys are emerging as promising materials for mid-infrared optoelectronics and silicon-compatible photonic devices, owing to their tunable direct bandgap. However, the growth of high-quality GeSn films with high Sn content remains challenging due to strain-induced defect formation. In this study, we investigate the role of film thickness on strain-induced relaxation, defect density, and Sn segregation. A series of five samples with varying thicknesses and ∼15% Sn-containing GeSn layers were grown, ranging from the critical thickness for strain relaxation to the onset of Sn segregation. All GeSn samples were analyzed using X-ray diffraction reciprocal space mapping (XRD-RSM) to explore the evolution of strain-induced relaxation as a function of thickness. Photoluminescence measurements reveal that increasing the GeSn thickness enhances strain relaxation while reducing defect-related emission, indicating a decrease in effective defect density prior to reaching the threshold thickness of GeSn layer. At a thickness of ∼150 nm, the GeSn layer shows the onset of Sn segregation, evident in the XRD-RSM spectrum, marking the threshold thickness for Sn segregation. This work defines an effective growth window in terms of thickness (35 to 150 nm) for fabricating relaxed, defect-suppressed GeSn layers with 15% Sn content. These findings emphasize the crucial role of thickness control in balancing strain relaxation and defect suppression, advancing the fabrication of high-quality, high Sn-content relaxed GeSn using molecular beam epitaxy.

Defects↗