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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

High-energy neutron spectroscopy with thick silicon detectors

The high-energy neutron component of the space radiation environment in thick structures such as the International Space Station contributes to the total radiation dose received by an astronaut. Detector design constraints such as size and mass have limited the energy range of neutron spectrum measurements in orbit to about 12 MeV in Space Shuttle studies. We present a new method for high-energy neutron spectroscopy using small silicon detectors that can extend these measurements to more than 500 MeV. The methodology is based on measurement of the detector response function for high-energy neutrons and inversion of this response function with measured deposition data to deduce neutron energy spectra. We also present the results of an initial shielding study performed with the thick silicon detector system for high-energy neutrons incident on polyethylene.

Non-NASA Center↗
DOE OSTI2023

High event rate analysis technique for the dual-axis duo-lateral position-sensitive silicon detectors of FAUST

The dual-axis duo-lateral (DADL) position-sensitive silicon detector was developed to obtain precise position and energy information for detected charged particles. The Forward Array Using Silicon Technology (FAUST) is currently equipped with 68 DADL detectors backed by CsI(Tl) scintillators for the study of charged particle correlations in heavy-ion collisions where precise position and energy information is essential. When conventional signal processing electronics were used for the DADL detectors, a position dependence of the measured energy as well as distortions in the calculated particle positions were observed. In previous work, waveforms from the detector after preamplification were studied to better understand the features that give rise to these distortions; therein, a waveform analysis technique was developed to improve the energy resolution and linearity in position reconstruction. However, the reading and writing of waveforms for an entire detector array limits data collection rates and adds significant burden in data storage and analysis speed. In this work, the integrators of a Struck SIS3316 ADC were utilized to process 228 Th source data to develop and optimize a new analysis method that captures the benefits of the waveform analysis technique while circumventing the waveform writing requirement. This integrator method – capable of 59 keV (FWHM) energy resolution – was used in the collection of 35 MeV/nucleon 28 Si + 12 C collision data using FAUST to investigate exotic decays of highly excited highly deformed nuclei. In this data, a position resolution of 0.4 mm (FWHM) was obtained for 25 MeV α-particles; for α-particles near this energy that originate from 8 Be ground state decays, a 8 Be ground state width of 30 keV (FWHM) was obtained. The impact of the energy-dependent DADL position resolution emergent from electronic noise on the quality of excited state measurement was modeled and compared to the experimental data.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2005

Advanced Silicon Detectors for High Energy Astrophysics Missions

A viewgraph presentation on the development of silicon detectors for high energy astrophysics missions is presented. The topics include: 1) Background: Motivation for Event-Driven CCD; 2) Report of Grant Activity; 3) Packaged EDCCD; 4) Measured X-ray Energy Resolution of the Gen1 EDCCDs Operated in "Conventional Mode"; and 5) EDCCD Gen 1.5-Lot 1 Planning.

Ricker, George↗
DOE OSTI2024

Machine learning for precise hit position reconstruction in Resistive Silicon Detectors

RSDs are LGAD silicon sensors with 100% fill factor, based on the principle of AC-coupled resistive read-out. Signal sharing and internal charge multiplication are the RSD key features to achieve picosecond-level time resolution and micron-level spatial resolution, thus making these sensors promising candidates as 4D-trackers for future experiments. This paper describes the use of a neural network to reconstruct the hit position of ionizing particles, an approach that can boost the performance of the RSD with respect to analytical models. The neural network has been trained in the laboratory and then validated on test beam data. The device-under-test in this work is a 450 μm-pitch matrix from the FBK RSD2 production, which achieved a resolution of about 65 μm at the DESY Test Beam Facility, a 50% improvement compared to a simple analytical reconstruction method, and a factor two better than the resolution of a standard pixel sensor of equal pitch size with binary read-out. The test beam result is compatible with the laboratory ones obtained during the neural network training, confirming the ability of the machine learning model to provide accurate predictions even in environments very different from the training one. Prospects for future improvements are also discussed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2017

Proton Straggling in Thick Silicon Detectors

Straggling functions for protons in thick silicon radiation detectors are computed by Monte Carlo simulation. Mean energy loss is constrained by the silicon stopping power, providing higher straggling at low energy and probabilities for stopping within the detector volume. By matching the first four moments of simulated energy-loss distributions, straggling functions are approximated by a log-normal distribution that is accurate for Vavilov k is greater than or equal to 0:3. They are verified by comparison to experimental proton data from a charged particle telescope.

Selesnick, R. S.↗
NASA NTRS1995

Silicon Detector Studies with an Interferometric Thickness Mapper

Cosmic ray isotopic composition studies aboard satellites are normally based on energy detection measurements which require a precise knowledge of matter thickness particle penetration. A laser- interferometer system has been developed to precisely map the thick- ness variations of large-area silicon detectors. Design, operation, and the data processing to derive thickness maps is described.

Cosmic Rays Silicon Detectors Interferometry Satel↗
DOE OSTI2021

Prediction of Leakage Current and Depletion Voltage in Silicon Detectors Under Extraterrestrial Radiation Conditions

Silicon detection is a mature technology for registering the passage of charged particles. At the same time it continues to evolve toward increasing radiation tolerance as well as precision and adaptability. For these reasons it is likely to remain a critical element of detection of systems associated with extraterrestrial exploration. Silicon sensor leakage current and depletion voltage depend on the integrated fluence received by the sensor and on its thermal history during and after the irradiation process. For minimal assumptions on shielding and hence on the particle energy spectrum, and using published data on Martian ground temperature, we predict the leakage current density and the depletion voltage, as a function of time, of silicon sensors in transit to and deployed continuously on the Mars surface for a duration of up to 28 Earth-years, for several sensor geometries and a worst-case temperature scenario.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1993

MeV Gamma Ray Detection Algorithms for Stacked Silicon Detectors

By making use of the signature of a gamma ray event as it appears in N = 5 to 20 lithium-drifted silicon detectors and applying smart selection algorithms, gamma rays in the energy range of 1 to 8 MeV can be detected with good efficiency and selectivity. Examples of the types of algorithms used for different energy regions include the simple sum mode, the sum-coincidence mode used in segmented detectors, unique variations on sum-coincidence for an N-dimensional vector event, and a new and extremely useful mode for double escape peak spectroscopy at pair-production energies. The latter algorithm yields a spectrum similar to that of the pair spectrometer, but without the need of the dual external segments for double escape coincidence, and without the large loss in efficiency of double escape events. Background events due to Compton scattering are largely suppressed. Monte Carlo calculations were used to model the gamma ray interactions in the silicon, in order to enable testing of a wide array of different algorithms on the event N-vectors for a large-N stack.

McMurray, Robert E. Jr.↗
DOE OSTI2021

Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data

This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the n+ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an impinging particle is shared isotropically among multiple read-out pads without the need for floating electrodes or an external magnetic field. Careful tuning of the coupling oxide thickness and the n+ doping profile is at the basis of the successful functioning of this device. Several RSD matrices with different pad width-pitch geometries have been extensively tested with a laser setup in the Laboratory for Innovative Silicon Sensors in Torino, while a smaller set of devices have been tested at the Fermilab Test Beam Facility with a 120 GeV/c proton beam. The measured spatial resolution ranges between 2.5μm for 70–100 pad-pitch geometry and 17μm with 200–500 matrices, a factor of 10 better than what is achievable in binary read-out (bin size/12). Beam test data show a temporal resolution of ~40ps for 200 μm pitch devices, in line with the best performances of LGAD sensors at the same gain.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1972

The response of covered silicon detectors to monoenergetic gamma rays

Measurements were made of the efficiency in detecting gamma rays of a 0.3-mm, a 3-mm, and a 5-mm silicon detector covered with different absorbers. Calibrated sources covering the range from 279 KeV to 2.75 MeV were used. The need for the absorbers in order to obtain meaningful results, and their contribution to detector response at electron biases from 50 to 200 KeV, are discussed in detail. It is shown that the results are independent of the atomic number of the absorber. In addition, the role of the absorber in increasing the efficiency with increasing photon energy for low bias setting is demonstrated for the 0.3-mm crystal. Qualitative explanations are given for the shapes of all curves of efficiency versus energy at each bias.

Reier, M.↗
NASA NTRS1972

The response of covered silicon detectors to monoenergetic gamma rays.

Measurements have been made of the efficiency in detecting gamma rays of a 0.3-mm-, 3-mm-, and 5-mm-thick silicon detector covered with different absorbers. Calibrated sources over the range from 279 keV to 2.75 MeV were used. The need for the absorbers to obtain meaningful results and their contribution to the response of the detectors at electron biases from 50 to 200 keV are discussed in detail. It is shown that the results are virtually independent of the atomic number of the absorber. In addition, the role of the absorber in increasing the efficiency with increasing photon energy for low bias settings is demonstrated for the 0.3-mm crystal. Qualitative explanations are given for the shapes of all curves of efficiency versus energy at each bias.

Reier, M.↗
NASA NTRS1965

Pion studies with silicon detectors.

Most probable energy loss in silicon for pions with energies from 365 to 50 mev, examining pion beam behavior through different absorption material thicknesses

MUON↗
DOE OSTI2026

Characterization of Low-energy Ionization Signals in Silicon Detectors for the Nab Experiment

The Nab (Neutron a b) experiment is designed to measure the beta-antineutrino angular correlation in free neutron 𝛽 decay with an ultimate precision goal of 0.1%, providing input for tests of Cabibbo-Kobayashi-Maskawa matrix unitarity. This measurement is performed via detection of electrons and protons in delayed coincidence using custom large-area segmented silicon detectors. We present the characterization of one such detector system to establish the proton energy and timing response, using a dedicated proton accelerator. The detected proton peak was studied for 25, 30, and 35 keV incident protons on a set of detector segments and multiple cooling cycles over a one-year period. Ionization losses were consistent with models of the detector dead layer with thicknesses less than 100 nm. The detected proton peak was stable within the uncertainty from energy calibration (0.25 keV). The rise times of detector pulses from 109Cd and 113Sn conversion electron sources were used to extract the impurity density profile and establish a precise model for the detector timing response. The observed impurity density profile varied from (2±2)×109/cm3 at the center to (26±2)×109/cm3 at the edge. This impurity density profile was then used to characterize systematic effects in proton time-of-flight measurements due to detector pulse-shape effects; the resultant proton timing systematic uncertainties were below 0.3 ns, which is sufficient for the Nab experiment.

Taylor, RJ [North Carolina State University]↗
DOE OSTI2025

Thickness and uniformity mapping of thin foils using resistive silicon detectors

Alpha energy loss is a common tool used for measuring target thicknesses. However, these measurements are often made without position information, which either forfeits knowledge of material uniformity and local thickness or requires a prohibitive number of measurements per target to partially recover this information. In consideration of this, a method for measuring position-dependent thicknesses is described in this work; by using the position-sensitivity of the dual-axis duo-lateral (DADL) silicon detector, thicknesses across the entire face of the material can be measured to sub-mm precision with a single measurement. Several examples are presented using a number of targets with varying characteristics, which altogether demonstrate the precision, accuracy, and versatility of this technique.

Foil uniformity↗
NASA NTRS2001

Comparisons of LET distributions measured in low-earth orbit using tissue-equivalent proportional counters and the position-sensitive silicon-detector telescope (RRMD-III)

Determinations of the LET distribution, phi(L), of charged particles within a spacecraft in low-Earth orbit have been made. One method used a cylindrical tissue-equivalent proportional counter (TEPC), with the assumption that for each measured event, lineal energy, y, is equal to LET and thus phi(L) = phi(y). The other was based on the direct measurement of LETs for individual particles using a charged-particle telescope consisting of position-sensitive silicon detectors called RRMD-III. There were differences of up to a factor of 10 between estimates of phi(L) using the two methods on the same mission. This caused estimates of quality factor to vary by a factor of two between the two methods.

Flight Experiment↗
NASA NTRS1981

A 16 x 16 element extrinsic silicon detector array

Two bismuth-doped silicon accumulation-mode charge-injection device (AMCID) infrared detector arrays are studied. The geometry and composition of the arrays, and a description of the cold and warm electronics components of the system are described. Instructions for setting up and operating the array system, plus results of a functional test, are included.

Source record↗