Characterizing silicon nitride crystallization with empirical potentials in LAMMPS
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Janicki, Tesia Danielle↗
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Results for “Silicon crystal”
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Understanding Silicon Nitride Crystallization from Amorphous Deposited Layers with Molecular Dynamics
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Lane, James Matthew Doyle↗
Silicon nitride crystallization study via molecular dynamics and the ultra-fast 3-body (UF3) machine-learned interatomic potential
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Janicki, Tesia Danielle↗
Feasibility of crystal-assisted collimation in the CERN accelerator complex
Bent silicon crystals mounted on high-accuracy angular actuators were installed in the CERN Super Proton Synchrotron (SPS) and extensively tested to assess the feasibility of crystal-assisted collimation in circular hadron colliders. The adopted layout was exploited and regularly upgraded for about a decade by the UA9 Collaboration. The investigations provided the compelling evidence of a strong reduction of beam losses induced by nuclear inelastic interactions in the aligned crystals in comparison with amorphous orientation. A conceptually similar device, installed in the betatron cleaning insertion of CERN Large Hadron Collider (LHC), was operated through the complete acceleration and storage cycle and demonstrated a large reduction of the background leaking from the collimation region and radiated into the cold sections of the accelerator and the experimental detectors. The implemented layout and the relevant results of the beam tests performed in the SPS and in the LHC with stored proton and ion beams are extensively discussed.
43 PARTICLE ACCELERATORS↗
Mapping Thermal Conductivity at the Atomic Scale: A Step toward the Thermal Design of Materials
We describe a spatial decomposition of the thermal conductivity, termed site-projected thermal conductivity, which quantifies the thermal conduction activity at each atomic site—a critical parameter for the thermal design of materials. The method is based on the Green–Kubo formula and the harmonic approximation and requires the force-constant and dynamical matrices, as well as a relaxed structural model. Throughout the study, it uses high quality models previously tested and compared to many experiments. It discusses the method and underlying approximations for amorphous silicon, carries the detailed analysis for amorphous silicon, and then examines an amorphous-crystal silicon interface and representative carbon materials. This study identifies the sites and local structures that reduce heat transport, and quantify these (estimate the spatial range) over which these “thermal defects” are effective. It identifies filamentary structures in the amorphous silicon network which impact heat transport and electronic structure (the Urbach edge) and electronic transport.
36 MATERIALS SCIENCE↗
Cost Assessment of Future Tandem Perovskite-Silicon Modules and LCOE Comparison to Silicon Technologies in Europe
Tandem perovskite-silicon (TPS) photovoltaic (PV) technology is a promising pathway for achieving higher efficiencies than those of single-junction crystal-silicon (c-Si) technologies. In this work, a techno-economic assessment of a TPS module is performed considering a viable large-scale manufacturing process for two future scenarios in 2025 and 2030 which allowed us to identify the main cost drivers of the tandem module cost. Furthermore, to analyse the performance of tandem module-based utility-scale PV systems and understand their competitiveness in Europe, the levelized cost of electricity was compared to passivated emitter and rear cell as well as silicon heterojunction based PV systems. The aim of this work is to provide a cost and performance guidance for TPS modules which could contribute to future PV energy systems.
ENERGY PLANNING, POLICY, AND ECONOMY,SOLAR ENERGY↗
Dataset of simulated vibrational density of states and X-ray diffraction profiles of mechanically deformed and disordered atomic structures in Gold, Iron, Magnesium, and Silicon
This dataset is comprised of a library of atomistic structure files and corresponding X-ray diffraction (XRD) profiles and vibrational density of states (VDoS) profiles for bulk single crystal silicon (Si), gold (Au), magnesium (Mg), and iron (Fe) with and without disorder introduced into the atomic structure and with and without mechanical loading. Included with the atomistic structure files are descriptor files that measure the stress state, phase fractions, and dislocation content of the microstructures. All data was generated via molecular dynamics or molecular statics simulations using the Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) code. This dataset can inform the understanding of how local or global changes to a materials microstructure can alter their spectroscopic and diffraction behavior across a variety of initial structure types (cubic diamond, face-centered cubic (FCC), hexagonal close-packed (HCP), and body-centered cubic (BCC) for Si, Au, Mg, and Fe, respectively) and overlapping changes to the microstructure (i.e., both disorder insertion and mechanical loading).
96 KNOWLEDGE MANAGEMENT AND PRESERVATION↗
Low embodied energy and carbon, high lifetime silicon boules via a combined chemical vapor deposition/float zone process
This work evaluates a new process route to making float zone (Fz)-quality silicon wafers using a combination of computational fluid dynamics (CFD) modeling and technoeconomic analysis. Our analysis finds that the new process competes with Czochralski (Cz)-grown wafers on a levelized cost of energy system level. The new process also decreases embodied energy and carbon of silicon photovoltaics (PV) by ~6x circumventing the energy-costly Siemens process used in polycrystalline silicon (poly-Si) production plants to generate feedstock for Fz and Cz boules. Instead of using poly-Si from the Siemens process to feed crystallization, the new process uses the high-purity, trichlorosilane (TCS) precursor gas to grow a poly-Si feed rod in-situ during a modified Fz1,2 boule growth process. The gas-to-boule float zone process enables opportunity to produce high-purity (low metals and oxygen content), uniformly doped single crystal silicon boules and wafers with high bulk lifetimes (τ bulk > 15 ms) to enable higher efficiency cells (>27 %) with fewer known degradation mechanisms than Czochralski (Cz)-grown wafers. These benefits reduce the levelized cost of electricity (LCOE) of PV-produced electricity. Here we show the results of our CFD and chemical modeling of the process to prove feasibility and economic viability.
14 SOLAR ENERGY↗
Quantum information approach to the implementation of a neutron cavity
Abstract Using the quantum information model of dynamical diffraction we consider a neutron cavity composed of two perfect crystal silicon blades capable of containing the neutron wavefunction. We show that the internal confinement of the neutrons through Bragg diffraction can be modelled by a quantum random walk. Furthermore, we introduce a toolbox for modelling crystal imperfections such as surface roughness and defects. Good agreement is found between the simulation and the experimental implementation, where leakage beams are present, modelling of which is impractical with the conventional theory of dynamical diffraction. Analysis of the standing neutron waves is presented in regards to the crystal geometry and parameters; and the conditions required for well-defined bounces are derived. The presented results enable new approaches to studying the setups utilizing neutron confinement, such as the experiments to measure neutron magnetic and electric dipole moments.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Experimental setup for high-resolution characterization of crystal optics for coherent X-ray beam applications
Stanford Synchrotron Radiation Lightsource serves a wide scientific community with its variety of X-ray capabilities. Recently, a wiggler X-ray source located at beamline 10-2 has been employed to perform high-resolution rocking curve imaging (RCI) of diamond and silicon crystals. X-ray RCI is invaluable for the development of upcoming cavity-based X-ray sources at SLAC, including the cavity-based X-ray free-electron laser and X-ray laser oscillator. In this paper, the RCI apparatus is described and experimental results are provided to validate its design. Future improvements of the setup are also discussed.
36 MATERIALS SCIENCE↗
Communication—Electrodeposition of Indium Directly on Silicon
Direct electrodeposition of indium onto silicon paves the way for advances in microelectronics, photovoltaics, and optoelectronics. Indium is generally electrodeposited onto silicon utilizing a physically or thermally deposited metallic seed layer. Eliminating this layer poses benefits in microelectronics by reducing resistive interfaces and in vapor-liquid-solid conversion to III-V material by allowing direct contact to the single-crystal silicon substrate for epitaxial conversion. We investigated conditions to directly electrodeposit indium onto n-type Si(100). We illustrate that a two-step galvanostatic plating at low temperatures can consistently produce smooth, continuous films of indium over large areas, in bump morphologies, and conformally into inverted pyramids.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Diffusion coefficients predicting facet-dependent crystallization in amorphous silicon nitride
Amorphous silicon nitride is a common material in microelectronics devices, which acts as an insulating barrier. Extended annealing times at elevated temperature can initiate crystallization of α-Si 3 N 4 , which does not possess the same barrier properties. Molecular dynamics can resolve the fundamental mechanism for α-Si 3 N 4 crystallization and the influence of local environments. Here, we compare two interatomic potentials and conclude that these models predict structural features (e.g., angular distributions and densities) which span the range of experimental measurements. We confirmed these models reproduce experimental estimates of activation energy and leveraged these models to identify crystallization drivers. We conclude that near-T g , facet-dependent silicon nitride crystal growth rates can be predicted directly by either bulk or interfacial diffusion properties.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Computing virtual dark-field X-ray microscopy images of complex discrete dislocation structures from large-scale molecular dynamics simulations
Dark-field X-ray microscopy (DFXM) is a novel diffraction-based imaging technique that non-destructively maps the local deformation from crystalline defects in bulk materials. While studies have demonstrated that DFXM can spatially map 3D defect geometries, it is still challenging to interpret DFXM images of the high-dislocation-density systems relevant to macroscopic crystal plasticity. This work develops a scalable forward model to calculate virtual DFXM images for complex discrete dislocation structure(s) (DDS) obtained from atomistic simulations. Our new DDS-DFXM model integrates a non-singular formulation for calculating the local strain from the DDS and an efficient geometrical optics algorithm for computing the DFXM image from the strain field. We apply the model to complex DDS obtained from a large-scale molecular dynamics simulation of compressive loading on single-crystal silicon. Simulated DFXM images exhibit prominent contrast for dislocation features between the multiple slip systems, demonstrating the potential of DFXM to resolve features from dislocation multiplication. In conclusion, the integrated DDS-DFXM model provides a toolbox for DFXM experimental design and image interpretation in the context of bulk crystal plasticity for a range of measurements across shock plasticity and the broader materials science community.
X-ray imaging↗
Topography of bent crystals with microradian resolution in one dimension
Optimum performance in x-ray imaging and spectroscopy of plasmas with bent crystals is achievable only when the crystal reflects the x rays theoretically perfectly across its entire surface. However, typical thin quartz (101̄1) crystal samples kept flat by direct attachment to a flat substrate reflect 8 keV x rays differently across their surface, on a scale comparable to the ideal rocking curve. Additional processing improves the uniformity. Irradiation of flat crystals with collimated, monochromatic x rays in rocking curve topography shows such problems directly, with microradian resolution. Nonuniform x-ray reflection is more difficult to document for strongly bent crystals because, then, monochromatic, collimated x rays satisfy the Bragg condition only along a narrow stripe that may be too narrow to resolve with the available cameras. However, it can be resolved with a knife edge that moves through the reflected x rays with the necessary spatial precision as demonstrated here for a bent silicon crystal. This shows qualitatively similar imperfections in the reflection as flat quartz and as the bent quartz analyzers reported on previously with lower resolution.
Pereira, N. R. (ORCID:0000000290569596)↗
Creating Functional Oxynitride–Silicon Interfaces and SrNbO 2 N Thin Films for Photoelectrochemical Applications
Photoelectrochemical performance dependence upon absorption length, carrier diffusion length, and surface area of an oxynitride photoabsorber is investigated. How best to fabricate optical-quality thin films of bandgap-tunable oxynitrides is also discussed. We targeted the stoichiometric compound SrNbO 2 N as an optimal wide-bandgap photoabsorber (1.9 eV) for use with silicon (1.1 eV) in a tandem structure photoelectrochemical cell. Preparation of perovskite oxynitrides at high-temperature as isolated powders is often straightforward, but it is difficult to integrate them as thin films in tandem junction devices with low-temperature materials. Here we develop the first method to prepare optical-quality SrNbO 2 N thin-films of tunable thickness and roughness on single-crystal silicon substrate. This achievement required an interfacial layer of ultra-thin TaN to be used as a barrier to reduce the inter-diffusion of silicon and oxygen during oxynitride syn-thesis. We produced a variety of SrNbO 2 N film thicknesses (20-440 nm) on n + -Si(100) surfaces. Roughness factor (0.14-21) scaled with thickness. The intrinsic photoelectrochemical activity of these devices was evaluated using a low-barrier sacrificial electron donor. Photocurrent density and photovoltage revealed a significant (and non-linear) dependence on film thickness and roughness. Furthermore, absorption length, carrier diffusion length, and surface area were each found to play key roles. Balancing these is required for optimally performing devices.
08 HYDROGEN↗
Electrochemical Flow Reactor Design Allows Tunable Mass Transport Conditions for Operando Surface Enhanced Infrared Absorption Spectroscopy
Abstract In situ attenuated total reflection surface enhanced infrared absorption spectroscopy (ATR‐SEIRAS) is often used to investigate the near‐surface electrocatalytic reaction environment. However, there is a gap in directly correlating the near‐surface reaction environment with electrocatalytic reaction rates. To that end, we designed an electrochemical flow reactor for operando electrochemical ATR‐SEIRAS and demonstrate its capability with the CO 2 reduction reaction (CO 2 RR). Roughened gold catalyst thin films are prepared on ATR silicon crystals as a model system to probe local species under CO 2 RR conditions in 0.1 M KHCO 3 . We measured changes in the interfacial CO 2 concentration as a function of applied potential and electrolyte flow rate in operando , allowing us to correlate the changes in reaction rates with the observed CO 2 concentration. Including the choice of the catalyst and electrolyte, coupling hydrodynamic control with ATR‐SEIRAS in this platform enables investigations of how the local microenvironment affects the activity and selectivity of electrochemical reactions.
Avilés Acosta, Jaime E.↗
Defect Characterization Using Positron Annihilation Spectroscopy on Laser-Ablated Surfaces
In recent years, short, pulsed laser ablation has been gaining popularity for machining small-scale test geometries from bulk samples and for efficient serial sectioning. These laser-based techniques are being added to the toolbox in material science, which makes it necessary to understand the changes in the material that occur from the laser–material interaction. Positron annihilation spectroscopy is a unique, nondestructive technique to investigate small defects in materials difficult to investigate by other tools. In this work, Doppler broadening and positron lifetime annihilation spectroscopy are utilized to help quantify the damage in materials treated with short, pulsed lasers. Using a femtosecond laser on single crystal silicon, this manuscript shows that clusters of vacancy-like defects and small voids increase systematically with laser power. Lastly, the damage induced by the laser can also reach to micrometer depths.
36 MATERIALS SCIENCE↗
Exceptional radiation resistance of hardened amorphous SiC under high-temperature hydrogen ion implantation
This study provides a compelling comparison of the structural and mechanical responses of single-crystal silicon carbide (sc-SiC), nanocrystalline silicon carbide (nc-SiC), and amorphous silicon carbide (am-SiC) to hydrogen ion implantation at 650 °C across three distinct fluences: low, medium, and high (LF, MF, HF). While both sc-SiC and nc-SiC exhibit blistering, microcracking, and exfoliation, am-SiC remains free of blisters, demonstrating superior resilience. Notably, nc-SiC, with its high density of stacking faults (SFs), requires a higher fluence to initiate blistering compared to sc-SiC. At high fluences, hydrogen accumulation at grain boundaries (GBs) in nc-SiC elevates internal gas pressure, intensifying exfoliation. In sc-SiC, blistering leads to increased hardness, whereas in nc-SiC, the degradation of the SF structure results in a reduction in hardness. In contrast, am-SiC undergoes structural relaxation during irradiation, resulting in a significant increase in hardness while maintaining its structural integrity, with only the formation of nano-sized spherical bubbles observed. Furthermore, these findings highlight the exceptional suitability of am-SiC for nuclear applications, where resistance to radiation-induced microcracking is critical.
36 MATERIALS SCIENCE↗