Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Silicon Photonics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Wavelength control and monitor for dense wavelength division multiplexing (DWDM) silicon photonic receiver

Techniques and circuitry for wavelength monitor and control are disclosed herein. The disclosed wavelength monitor and control circuitry and techniques are designed to realize a multi-channel DWDM optical link by using a photonic receiver that dynamically adjusts resonant wavelengths of the microring drop filter (MDF), as needed. The wavelength monitor and control circuitry can monitor and control the resonant wavelengths of multiple MDFs for a DWDM silicon photonics receiver with minimum power and area overhead. In an embodiment, circuitry for an optical receiver comprises an MDF having resonant wavelength for multiple DWDM channels, and circuitry to control and monitor the resonant wavelength of the MDF in real-time and in manner that compensates for deviation between actual resonant wavelength of the MDF and the incident optical wavelength of the MDF.

Huang, Tsung Ching↗
DOE OSTI2021

Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

Abstract The aim of this paper is to identify, analyze and compare the defects present in III-As, as a function of dislocation density, and as a function of the presence/absence of quantum dots (QDs). Such materials are of fundamental importance for the development of lasers and photodiodes for silicon photonics. The study is based on an extensive deep-level transient spectroscopy investigation, carried out on GaAs pin diodes grown on Si and on GaAs (that differ in the dislocation density), with and without embedded QDs. The original results described in this paper demonstrate that: (a) we were able to identify four different defects within the device grown on Si (three electron and one hole traps) and one defect (hole trap) in the device on GaAs, common to both samples; (b) all the majority carrier traps identified are located near midgap, i.e. are efficient non-radiative recombination centers; (c) such defects are absent (or non-detectable) in the sample grown on GaAs substrate, having a very low dislocation density; (d) the presence of QDs does not result in additional defects within the semiconductor material; (e) the analysis of the capture kinetics revealed that two of the identified traps are related to point defects, whereas the other two traps can be associated with point defects located near a dislocation; (f) a comparison with previous reports indicate that the detected traps are related to native III-As defects, or to oxygen-related complexes.

Physics↗
DOE OSTI2025

Entanglement of a nuclear spin qubit register in silicon photonics

Colour centres provide an optical interface to quantum registers based on electron and nuclear spin qubits in solids. The T centre in silicon is an emerging spin–photon interface that combines telecom O-band optical transitions and an electron spin in a scalable photonics platform. Here, in this study, we integrate T centres into single-mode photonic waveguides in a silicon-on-insulator platform. We demonstrate the initialization, coherent control and state read-out of a three-qubit register based on the electron spin of a T centre coupled to a hydrogen and a silicon nuclear spin. The spin register exhibits spin echo coherence times of 0.41(2) ms for the electron spin, 112(12) ms for the hydrogen nuclear spin and 67(7) ms for the silicon nuclear spin. We use nuclear–nuclear two-qubit gates to generate entanglement between the two nuclear spins with a fidelity of F = 0.77(3) and a coherence time of ${T}_{2}^{* }=2.60(8)$ ms. Our results show that a T centre in silicon photonics can realize a multi-qubit register with an optical interface for quantum communication.

Song, Hanbin [Lawrence Berkeley National Laborator↗
NASA NTRS2022

Silicon Photonic Transceiver for Spacecraft Navigational Lidar

NASA is developing an entry, descent, and landing (EDL) lidar system, the Navigation Doppler Lidar (NDL), for high-precision landing on the Moon, Mars, and beyond. The current flight NDL systems use 1550 nm fiber-optic components for frequency-modulated continuous wave (FMCW) ranging beyond 5 km, but have reduced performance under vibrational and thermal stresses during EDL. Here we describe recent efforts to develop a breadboard silicon photonic optical transceiver for integration into NDL to reduce instrument size and improve robustness to environment and demonstrate the optical balanced receiver performance during testing with the breadboard NDL unit. Initial testing shows improved suppression of common mode noise by 25 dB over the current receiver, but a 10 dB reduction in signal to noise ratio (SNR) resulting from coupling losses from fiber to the on-chip waveguides. Future work will target reduced coupling loss, hermetic packaging, and co-integration of a single sideband suppressed carrier modulator into the same chip.

Photonic Integrated Circuits↗
DOE OSTI2023

Massively scalable Kerr comb-driven silicon photonic link

Abstract The growth of computing needs for artificial intelligence and machine learning is critically challenging data communications in today’s data-centre systems. Data movement, dominated by energy costs and limited ‘chip-escape’ bandwidth densities, is perhaps the singular factor determining the scalability of future systems. Using light to send information between compute nodes in such systems can dramatically increase the available bandwidth while simultaneously decreasing energy consumption. Through wavelength-division multiplexing with chip-based microresonator Kerr frequency combs, independent information channels can be encoded onto many distinct colours of light in the same optical fibre for massively parallel data transmission with low energy. Although previous high-bandwidth demonstrations have relied on benchtop equipment for filtering and modulating Kerr comb wavelength channels, data-centre interconnects require a compact on-chip form factor for these operations. Here we demonstrate a massively scalable chip-based silicon photonic data link using a Kerr comb source enabled by a new link architecture and experimentally show aggregate single-fibre data transmission of 512 Gb s −1 across 32 independent wavelength channels. The demonstrated architecture is fundamentally scalable to hundreds of wavelength channels, enabling massively parallel terabit-scale optical interconnects for future green hyperscale data centres.

Rizzo, Anthony (ORCID:000000034752797X)↗
DOE OSTI2020

Physics and applications of quantum dot lasers for silicon photonics

Abstract Photonic integrated circuits (PICs) have enabled numerous high performance, energy efficient, and compact technologies for optical communications, sensing, and metrology. One of the biggest challenges in scaling PICs comes from the parasitic reflections that feed light back into the laser source. These reflections increase noise and may cause laser destabilization. To avoid parasitic reflections, expensive and bulky optical isolators have been placed between the laser and the rest of the PIC leading to large increases in device footprint for on-chip integration schemes and significant increases in packaging complexity and cost for lasers co-packaged with passive PICs. This review article reports new findings on epitaxial quantum dot lasers on silicon and studies both theoretically and experimentally the connection between the material properties and the ultra-low reflection sensitivity that is achieved. Our results show that such quantum dot lasers on silicon exhibit much lower linewidth enhancement factors than any quantum well lasers. Together with the large damping factor, we show that the quantum dot gain medium is fundamentally dependent on dot uniformity, but through careful optimization, even epitaxial lasers on silicon can operate without an optical isolator, which is of paramount importance for the future high-speed silicon photonic systems.

36 MATERIALS SCIENCE↗
NASA NTRS2022

Cosmic Radiation Effect on Silicon Photonic Mach-Zehnder Modulator

We evaluated the radiation effects of cosmic rays on silicon Mach-Zehnder Modulator loaded on International Space Station. Permanent changes of refractive index (10 -3 ) and carrier lifetime reduction have been observed after 6 months’ radiation.

Mach-Zehnder interferometers↗
DOE OSTI2026

Slow-Light Mid-IR Silicon Photonic Chips for NO 2 and CH 4 Gas Detection

A compact, chip-scale mid-infrared gas sensor is demonstrated, leveraging a two-dimensional photonic crystal waveguide (PCW) fabricated on a silicon-on-insulator (SOI) platform. The PCW comprises a hexagonal lattice with lattice constant a = 860 nm and hole radius r = 0.22a, incorporating a central line defect of reduced-radius holes (r s = 0.7r) to induce slow-light propagation near the photonic band edge with a group index of approximately 73, thereby enhancing light-matter interaction. The sensor operates at fundamental absorption wavelengths of 3.42 μm for nitrogen dioxide (NO 2 ) and 3.40 μm for methane (CH 4 ), utilizing the strongest molecular vibrational transitions for maximum sensitivity. Experimental validation was conducted using dynamically diluted gas mixtures generated by mass flow controllers, with signal acquisition performed by a liquid nitrogen-cooled InSb detector. For NO 2 , the sensor exhibited excellent linear response over 5–25 ppm (part per million) with coefficient of determination R 2 = 0.9934, achieving a detection limit of 210 ppb (part per billion)─representing the first reported silicon photonic-based NO 2 detection. For CH 4 , exposure to 25 ppm resulted in a 6.4% decrease in transmitted intensity, demonstrating multigas sensing capability. The CMOS-compatible fabrication process and compact 3 mm device footprint establish this SOI-PCW platform as a scalable, low-power solution for integrated mid-infrared gas sensing, with significant potential for environmental monitoring and industrial safety applications.

Crystals↗
DOE OSTI2024

Tunable quantum emitters on large-scale foundry silicon photonics

Abstract Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300 mm foundry process. With this platform, we achieve single-photon emission via resonance fluorescence and scalable emission wavelength tunability. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries.

Larocque, Hugo (ORCID:000900095849780X)↗
DOE OSTI2020

Experimental demonstration of broadband solar absorption beyond the lambertian limit in certain thin silicon photonic crystals

The tantalizing possibility of 31% solar-to-electric power conversion efficiency in thin film crystalline silicon solar cell architectures relies essentially on solar absorption well beyond the Lambertian light trapping limit (Bhattacharya and John in Nat Sci Rep 9:12482, 2019). Up to now, no solar cell architecture has exhibited above-Lambertian solar absorption, integrated over the broad solar spectrum. In this work, we experimentally demonstrate two types of photonic crystal (PhC) solar cells architectures that exceed Lambertian light absorption, integrated over the entire 300–1,200 nm wavelength band. These measurements confirm theoretically predicted wave-interference-based optical resonances associated with long lifetime, slow-light modes and parallel-to-interface refraction. These phenomena are beyond the realm of ray optics. Using two types of 10-μm thick PhC’s, first an Inverted Pyramid PhC with lattice constant a= 2,500 nm and second a Teepee PhC with a = 1,200 nm, we observe solar absorption well beyond the Lambertian limit over λ = 950–1,200 nm. Our absorption measurements correspond to the maximum-achievable-photocurrent-density (MAPD), under AM1.5G illumination at 4-degree incident angle, 41.29 and 41.52 mA/cm2 for the Inverted Pyramid and Teepee PhC, respectively, in agreement with wave-optics, numerical simulations. Both of these values exceed the MAPD (= 39.63 mA/cm2) corresponding to the Lambertian limit for a 10-μm thick silicon for solar absorption over the 300–1,200 nm band.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Controlling light emission by engineering atomic geometries in silicon photonics

By engineering atomic geometries composed of nearly 1000 atomic segments embedded in micro-resonators, we observe Bragg resonances induced by the atomic lattice at the telecommunication wavelength. The geometrical arrangement of erbium atoms into a lattice inside a silicon nitride (SiN) microring resonator reduces the scattering loss at a wavelength commensurate with the lattice. We confirm dependency of light emission to the atomic positions and lattice spacing and also observe Fano interference between resonant modes in the system.

42 ENGINEERING↗
DOE OSTI2022

Analysis of First-Order Gratings in Silicon Photonic Waveguides

A simple thin film effective index analysis for first order gratings in Si photonic waveguides is shown to provide highly accurate results for reflected and transmitted power spectrums as long as the waveguide remains single mode and non-radiating. A cover layer can be added to the grating region of a Si photonic waveguide to increase the strength of the grating, modify transition losses from the input waveguide to the grating waveguide region, and/or modify the width of the reflectivity spectrum. For a given grating period, the peak reflection and spectral width of the reflectivity decrease as the duty cycle is decreased or increased from ~50%. For both radiating and multimode structures, the coupling between all modes, power radiated towards the superstrate (upwards), power radiated downwards (substrate) and transmitted power analyzed by Floquet-Bloch, Eigenmode Expansion and Finite Difference Time Domain methods show excellent agreement. Coupling coefficients calculated using analytic formulas are shown to be accurate only for shallow grating depths.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗