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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Development of Submillimeter SIS Mixers and Broadband HEMT Amplifiers

The goal of this project is to develop and demonstrate a new generation of superconducting tunnel junction (SIS) receivers with extremely wide instantaneous (intermediate-frequency, or IF) bandwidths, of order 12 GHz. Such mixers would allow rapid submillimeter wavelength spectral line surveys to be carried out with SOFIA, and could potentially be used for future submillimeter space missions such as SAFIR. There are two major components which are being developed: (1) SIS mixers with broad (12 GHz) IF bandwidths; and (2) low-noise, broadband microwave, (6-18 GHz) amplifiers, which amplify the IF output from the SIS mixer. The work on these components is discussed in two sections

Zmuidzinas, Jonas↗
NASA NTRS2002

An Extremely Wide Bandwidth, Low-Noise SIS Heterodyne Receiver Design for Millimeter and Submillimeter Observations

Millimeter and submillimeter heterodyne receivers using state-of-the-art SIS detectors are capable of extremely large instantaneous bandwidths with noise temperatures within a few Kelvin of the quantum limit. We present the design for a broadband, sensitive, heterodyne spectrometer under development for the Caltech Submillimeter Observatory (CSO). The 180-300 GHz double-sideband design uses a single SIS device excited by a full bandwidth, fixed-tuned waveguide probe on a silicon substrate. The IF output frequency (limited by the MMIC low noise IF preamplifier) is 6-18 GHz, providing an instantaneous RF bandwidth of 24 GHz (double-sideband). The SIS mixer conversion loss should be no more than 1-2 dB with mixer noise temperatures across the band within 10 K of the quantum limit. The single-sideband receiver noise temperature goal is 70 K. The wide instantaneous bandwidth and low noise will result in an instrument capable of a variety of important astrophysical observations beyond the capabilities of current instruments. Lab testing of the receiver will begin in the summer of 2002, and the first use on the CSO should occur in the spring of 2003.

Sumner, Matthew↗
NASA NTRS2005

Making Wide-IF SIS Mixers with Suspended Metal-Beam Leads

A process that employs silicon-on-insulator (SOI) substrates and silicon (Si) micromachining has been devised for fabricating wide-intermediate-frequency-band (wide-IF) superconductor/insulator/superconductor (SIS) mixer devices that result in suspended gold beam leads used for radio-frequency grounding. The mixers are formed on 25- m-thick silicon membranes. They are designed to operate in the 200 to 300 GHz frequency band, wherein wide-IF receivers for tropospheric- chemistry and astrophysical investigations are necessary. The fabrication process can be divided into three sections: 1. The front-side process, in which SIS devices with beam leads are formed on a SOI wafer; 2. The backside process, in which the SOI wafer is wax-mounted onto a carrier wafer, then thinned, then partitioned into individual devices; and 3. The release process, in which the individual devices are separated using a lithographic dicing technique. The total thickness of the starting 4-in. (10.16-cm)-diameter SOI wafer includes 25 m for the Si device layer, 0.5 m for the buried oxide (BOX) layer, and 350 m the for Si-handle layer. The front-side process begins with deposition of an etch-stop layer of SiO2 or AlN(x), followed by deposition of a Nb/Al- AlN(x) /Nb trilayer in a load-locked DC magnetron sputtering system. The lithography for four of a total of five layers is performed in a commercial wafer-stepping apparatus. Diagnostic test dies are patterned concurrently at certain locations on the wafer, alongside the mixer devices, using a different mask set. The conventional, self-aligned lift-off process is used to pattern the SIS devices up to the wire level.

Kaul, Anupama↗
NASA NTRS1993

A Prototype Quasi-Optical SIS Array Receiver

We report measurements on a prototype SIS array receiver consisting of a ten-element dipole antenna array with half square micron niobium SIS junctions.

SIS array antenna array mixer array SIS receiver w↗
DOE OSTI2020

Materials Data on SiS by Materials Project

SiS crystallizes in the orthorhombic Pmna space group. The structure is one-dimensional and consists of two SiS ribbons oriented in the (0, 1, 0) direction. Si4- is bonded in a distorted water-like geometry to two equivalent S4+ atoms. Both Si–S bond lengths are 2.17 Å. S4+ is bonded in a water-like geometry to two equivalent Si4- atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Description of SIS-AOP Result Format V1.0

Single Image SICD-Based Automatic Object Processing (SIS-AOP) is an automatic object identification tool for SAR imagery. It ingests a SAR image in standard SICD format, and it will run a suite of algorithms to cue possible vehicle detections, cull those detections and then ultimately label them either as detections only or possible expound to give a class-level ID or a vehicle-type ID. The SIS-AOP results are given in an XML (Extensible Markup Language) output format. This document defines the elements in the SISAOPR XML output format.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1985

Optimization of SIS mixer elements

Superconductor-Insulator-Superconductor (SIS) quantum mixers provide an approach to millimeter wave mixing - potentially offering conversion gain, a low local oscillator power demand, and potential mixer noise temperatures near the quantum limit. The development of a reliable fabrication technology for producing such high quality SIS devices for mixer applications in radio astronomy is the focus of the work.

Mattauch, Robert J.↗
NASA NTRS1989

NbN/MgO/NbN SIS tunnel junctions for submm wave mixers

The authors report on the fabrication and testing of all-refractory NbN/MgO/NbN SIS (superconductor-insulator-superconductor) tunnel junctions for use as high-frequency mixers. Progress in the development of techniques for the fabrication of submicron-area tunnel junctions is described. Junction structures which have been investigated include mesa, crossline, and edge geometries. Using reactive sputtering techniques, NbN tunnel junctions with critical currents in excess of 104 A/sq cm have been fabricated with Vm values as high as 65 mV and areas down to 0.1 sq micron. Specific capacitance measurements on NbN/MgO/NbN mesa-type tunnel junctions give values in the range 60-90 fF/sq micron. These SIS tunnel junctions have been integrated with antennas and coupling structures for mixer tests in a waveguide receiver at 207 GHz. Preliminary mixer results are reported.

Stern, J. A.↗
NASA NTRS1992

Josephson effect gain and noise in SIS mixers

Superconducting tunnel diode (SIS) mixers are used for radio astronomy from 100 to 500 GHz. They are being considered for NASA spaceborne astronomy at frequencies near 1000 GHz. Measurements of gain and noise in SIS mixers at 230 and 492 GHz are reported. Relatively high gain and noise associated with Josephson currents are measured that have not been previously reported. These measurements show that Josephson currents are increasingly important as operating frequencies are raised. The techniques used to make these measurements are discussed. Measurements made with hot and cold black-bodies are shown to be inaccurate at high frequencies.

Wengler, Michael J.↗
NASA NTRS1992

A 380 GHz SIS receiver using Nb/AlO(x)/Nb junctions for a radioastronomical balloon-borne experiment: PRONAOS

The superheterodyne detection technique used for the spectrometer instrument of the PRONAOS project will provide a very high spectral resolution (delta nu/nu = 10(exp -6)). The most critical components are those located at the front-end of the receiver: their contribution dominates the total noise of the receiver. Therefore, it is important to perform accurate studies for specific components, such as mixers and multipliers working in the submillimeter wave range. Difficulties in generating enough local oscillator (LO) power at high frequencies make SIS mixers very desirable for operation above 300 GHz. The low LO power requirements and the low noise temperature of these mixers are the primary reason for building an SIS receiver. This paper reports the successful fabrication of small (less than or equal to 1 sq micron) Nb/Al-O(x)/Nb junctions and arrays with excellent I-V characteristics and very good reliability, resulting in a low noise receiver performance measured in the 368/380 GHz frequency range.

Febvre, P.↗
NASA NTRS1992

A planar quasi-optical SIS receiver for array applications

A planar, quasi-optical SIS receiver operating at 230 GHz is described. The receiver consists of a 2 x 5 array of half wave dipole antennas with ten niobium-aluminum oxide-niobium SIS junctions on a quartz dielectric-filled parabola. The 1.4 GHz intermediate frequency is coupled from the mixer via coplanar strip transmission lines and 4:1 balun transformers. The receiver is operated at 4.2 K in a liquid helium immersion cryostat. We report accurate measurements of the performance of single receiver elements. A mixer noise temperature of 89 K DSB, receiver noise temperature of 156 K DSB, and conversion loss of 3 dB into a matched load have been obtained.

Stimson, Philip A.↗
NASA NTRS1992

Comparison of measured and predicted performance of a SIS waveguide mixer at 345 GHz

The measured gain and noise of a SIS waveguide mixer at 345 GHz have been compared with theoretical values, calculated from the quantum mixer theory using a three port model. As a mixing element, we use a series array of two Nb-Al2O3-Nb SIS junctions. The area of each junction is 0.8 sq microns and the normal state resistance is 52 omega. The embedding impedance of the mixer has been determined from the pumped DC-IV curves of the junction and is compared to results from scale model measurements (105 x). Good agreement was obtained. The measured mixer gain, however, is a factor of 0.45 plus or minus 0.5 lower than the theoretical predicted gain. The measured mixer noise temperature is a factor of 4-5 higher than the calculated one. These discrepancies are independent on pump power and are valid for a broad range of tuning conditions.

Honingh, C. E.↗
NASA NTRS1993

A planar quasi-optical SIS receiver

A planar, quasi-optical SIS receiver operating at 230 GHz is described. The receiver consists of a 2 x 5 array of half wave dipole antennas with ten niobium-aluminum oxide-niobium SIS junctions on a quartz dielectric-filled parabola. The 1.4 GHz intermediate frequency is coupled from the mixer via coplanar strip transmission lines and 4:1 balun transformers. The receiver is operated at 4.2 K in a liquid helium immersion cryostat. We report accurate measurements of the performance of single receiver elements. A mixer noise temperature of 89 K DSB, receiver noise temperature of 156 K DSB, and conversion loss of 3 dB into a matched load have been obtained.

Stimson, Philip A.↗
NASA NTRS1993

A low noise 665 GHz SIS quasi-particle waveguide receiver

Recent results on a 565-690 GHz SIS heterodyne receiver employing a 0.36 micron(sup 2) Nb/AlOx/Nb SIS tunnel junction with high quality circular non-contacting back short and E-plane tuners in a full height wave guide mount are reported. No resonant tuning structures were incorporated in the junction design at this time, even though such structures are expected to help the performance of the receiver. The receiver operates to at least the gap frequency of Niobium, approximately 680 GHz. Typical receiver noise temperatures from 565-690 GHz range from 160K to 230K with a best value of 185K DSB at 648 GHz. With the mixer cooled from 4.3K to 2K the measured receiver noise temperatures decreased by approximately 15 percent, giving roughly 180K DSB from 660 to 680 GHz. The receiver has a full 1 GHz IF pass band and was successfully installed at the Caltech Submillimeter Observatory in Hawaii.

Kooi, J. W.↗
NASA NTRS1994

Statistical uncertainties in temperature diagnostics for hot coronal plasma using the ASCA SIS

Statistical uncertainties in determining the temperatures of hot (0.5-10 keV) coronal plasmas are investigated. The statistical presicion of various spectral temperature diagnostics is established by analyzing synthetic ASCA solid-state imaging spectrometer (SIS) CCD spectra. The diagnostics considered are the ratio of hydrogen-like to helium-like line complexes of Z greater than or = 14 elements, line-free portions of the continuum, and the entire spectrum. While fits to the entire spectrum yield the highest statistical precision, it is argued that fits to the line-free continuum are less susceptible to atomic data uncertainties but lead to a modest increase in statistical uncertainty over full spectral fits. Temperatures deduced from line ratios can have similar accuracy, but only over a narrow range of temperatures. Convenient estimates of statistical accuracies for the various temperature diagnostics are provided which may be used in planning ASCA SIS observations.

Swartz, Douglas A.↗
NASA NTRS1995

Wideband fixed-tuned SIS receiver for 200-GHz operation

We report on the design and development of a heterodyne receiver, designed to cover the frequency range 176-256 GHz. This receiver incorporates a niobium superconductor-insulator-superconductor (SIS) tunnel junction mixer, which, chiefly for reasons of reliability and ease of operation, is a fixed-tuned waveguide design. On-chip tuning is provided to resonate out the junction's geometric capacitance and produce a good match to the waveguide circuit. Laboratory measurements on the first test receiver indicate that the required input bandwidth (about 40%) is achieved with an average receiver noise temperature of below 50 K. Mixer conversion gain is observed at some frequencies, and the lowest measured receiver noise is less than 30 K. Furthermore, the SIS mixer used in this receiver is of simple construction, is easy to assemble and is therefore a good candidate for duplication.

RECEIVER NOISE TEMPERATURE↗
NASA NTRS1996

A 850 GHz SIS receiver employing silicon micro-machining technology

A 850 GHz superconductor-insulator-superconductor (SIS) heterodyne receiver which uses a radiofrequency tuned niobium tunnel junction fabricated on a 1 micron thick silicon nitrate membrane, is reported. From video and heterodyne measurements, it was calculated that the niobium film loss in the radiofrequency matching network is about 6.8 dB at 822 GHz. These results are approximately a factor of two higher than the theoretical loss predicted by the Mattis-Bardeen theory in the extreme anomalous limit. The junction design and the receiver configuration are described, including the mixer block, the membrane construction and the cooled optics. The performance tests using a Fourier transform spectrometer to measure the response of the radiofrequency matching network, and the SIS simulations of the receiver response to cold and hot loads, the infrared noise contribution and the overall mixer conversion efficiency, are reported. It is concluded that the receiver response is limited by the absorption loss in the radiofrequency matching network.

Kooi, J. W.↗