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All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

SiH and the unidentified 4.6 micron feature

Results from experimental studies of the irradiation of SiH4-H2O and Fe(CO)5-SiH4-H2O ice mixtures at 15 K using 1 MeV protons have revealed the synthesis of a very stable infrared spectral feature at 4.6 microns which is characteristic of the SiH functional group. This feature persists through warmup of the ice, exposure to air at 300 K, and vacuum annealing to at least 400 K. Because of the high cosmic abundance of both silicon and hydrogen and the unexpected stability of the SiH feature in our experiments, it is suggested that SiH might be responsible for the 4.6 micron absorption feature observed in W33A.

Nuth, Joseph A.↗
NASA NTRS1988

Silane and germane plasma diagnostics for depositing photosensitive a-SiGe:H films

Highly photosensitive a-SiGe:H films with a light-to-dark conductivity ratio of 8 x 103 and an optical bandgap of 1.40 eV have been produced by RF glow discharge using hydrogen dilution of SiH4 and GeH4 mixed gas plasma. The critical role of hydrogen dilution in GeH4 containing plasmas is to suppress the gas-phase polymerization and promote the incorporation of Ge into the film. It is observed that inelastic laser light scattering of the RF plasma is a sensitive method for monitoring the onset of the gas-phase polymerization. In situ coherent anti-Stokes Raman spectroscopy measurements have shown that the dissociation rate of GeH4 is a factor of three larger than that of SiH4.

Shing, Y. H.↗
NASA NTRS1991

Instantaneous planar visualization of reacting supersonic flows using silane seeding

A new visualization technique for reacting flows has been developed. This technique, which is suitable for supersonic combustion flows, has been demonstrated on a scramjet combustor model. In this application, gaseous silane (SiH4) was added to the primary hydrogen fuel. When the fuel reacted, so did the (SiH4), producing silica (SiO2) particles in situ. The particles were illuminated with a laser sheet formed from a frequency-doubled Nd:YAG laser (532 nm) beam and the Mie scattering signal was imaged. These planar images of the silica Mie scattering provided instantaneous 'maps' of combustion progress within the turbulent reacting flowfield.

Smith, Michael W.↗
NASA NTRS1991

Growth and properties of amorphous silicon films grown using pulsed-flow reactive plasma beam epitaxy

The growth and properties of a-Si:H films grown using a novel deposition technique, reactive plasma beam epitaxy, are discussed. In this technique, a remote H plasma produced in a microwave-ECR reactor is used to grow a-Si:H films at low pressures. The H ions react with SiH4 introduced near the substrate to produce the film. The flow of SiH4 is pulsed on or off, thereby achieving in-situ annealing of the film during growth by H ions and radicals. The films produced by this technique appear to have good electronic quality, and are more stable than the standard glow discharge films.

Dalal, Vikram L.↗
NASA NTRS1972

Toxic Hazards Research Unit annual technical report, 1972

The activities of the Toxic Hazards Research Unit (THRU) for the period of June 1971 through May 1972 are reviewed in this report. Acute inhalation toxicity experiments were conducted on hydrogen chloride (HCl) gas and aerosol, ethyl bromide (C2H5Br), hydrogen bromide (HBr), hydrogen sulfide (H2S), ammonia (NH3), chlorine (CL2), and silane (SiH4). Subacute toxicity studies were conducted on chlorine pentafluoride (ClF5), dichloromethane (CH2Cl2) and coal tar volatiles. Further toxicity studies of subacute and chronic responses to inhaled monomethylhydrazine (MMH) are also described.

Macewen, J. D.↗
NASA NTRS1974

Characterization of charge states of energetic ions in solids from associated K X-ray production

The strong projectile-charge-state dependence of K X-ray production in gases establishes a charge-state scale for ions penetrating solids. Si K X-ray cross sections in gaseous SiH4 were compared to those in solid Si for 40-MeV O (6+ to 8+) and 86-MeV Ar (6+ to 16+) projectiles. For Ar an effective charge of 11 plus or minus one is found compared to an emergent charge of 14.8 plus or minus 0.5. The result is discussed in terms of alternate models for steady-state excitation in solids.

Datz, S.↗
NASA NTRS1975

Epitaxial solar cells fabrication

Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

Daiello, R. V.↗
NASA NTRS1976

Chemical vapor deposition growth

A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature.

Ruth, R. P.↗
NASA NTRS1976

Scattering of high-velocity He atoms by C/CH3/4 and Si/CH3/4

Fast helium beams are employed to probe short-range potentials in tetramethylmethane and tetramethylsilane, and throw light on the relations between these more complex reactions and such reactions as He-CH4 and He-SiH4. Earlier work on scattering of helium and argon beams by polyatomic molecules (fluorinated methanes, sulfur hexafluoride, silane, germane) are at variance with these results, as neither of the above systems can be represented as a cluster of four CH4 molecules, Effective He-H potentials based on scattering data are identical for the two systems studied but are much larger than the corresponding CH4 potential. A model in which centers of force are located along the bonds rather than at the nuclei is suggested for further testing.

Amdur, I.↗
NASA NTRS1976

Differences in the production of noncharacteristic radiation in gaseous and solid targets

Bell et al. (1975) found that the observed yield of noncharacteristic radiation (NCR) for a beam of S atoms hitting Al and Ne targets is of approximately equal magnitude for gaseous and solid targets under similar collision conditions. They concluded that NCR is produced predominantly in single collisions for 55-MeV S atoms on an Al target. This conclusion is tested in a similar collision system by comparing the NCR yields obtained with a 40-MeV Si(6+) ion beam on SiH4 (gaseous target) and on Al (solid target). Corrected X-ray spectra recorded in both cases clearly indicate a difference in the NCR yield for gaseous and solid targets. The results suggest that double collisions dominate the NCR production and that a single-collision production contribution of 15% to 20% is an upper limit for the projectile-target system used.

Laubert, R.↗
NASA NTRS1976

Chemistry and spectroscopy of the Jovian atmosphere

A comprehensive review is given of the chemistry and spectroscopic studies of the Jovian atmosphere. Thermochemical equilibrium models for determining atmospheric composition are considered along with possible disequilibrating processes, and studies of the photochemistry of H2, CH4, NH3, H2S, and PH3 using the modeling methods are summarized. It is shown that photodissociation and advection are the major disequilibrating processes in Jupiter's atmosphere, that lightning and charged-particle bombardment are relatively minor factors in the planet's bulk chemistry, and that the existence of living organisms on the planet is highly improbable. Spectroscopic investigations of Jupiter are discussed, emphasizing recent observations of absorption bands due to CH4, NH3, H2, He, and D. Spectroscopic abundance determinations are examined for H2, HD, CH4, CH3D, NH3, C2H6, C2H2, and PH3. Upper limits are given for the abundances of several unobserved gases in the visible atmosphere, including H2S, HCl, SiH4, benzene, purines, pyrimidines, and their derivatives.

Prinn, R. G.↗
NASA NTRS1976

Applications of beam-foil spectroscopy to atomic collisions in solids

Some selected papers presented at the Fourth International Conference on Beam-Foil Spectroscopy, whose results are of particular pertinence to ionic collision phenomena in solids, are reviewed. The topics discussed include solid target effects and means of surmounting them in the measurement of excited projectile ion lifetimes for low-energy heavy element ions; the electron emission accompanying the passage of heavy particles through solid targets; the collision broadening of X rays emitted from 100 keV ions moving in solids; residual K-shell excitation in chlorine ions penetrating carbon; comparison between 40 MeV Si on gaseous SiH4 targets at 300 mtorr and 40 MeV Si on Al; and the emergent surface interaction in beam-foil spectroscopy. A distinct overlap of interests between the sciences of beam-foil spectroscopy and atomic collisions in solids is pointed out.

Sellin, I. A.↗
NASA NTRS1977

Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process, task 2, LSSA project

Silicon sessile drop experiments were performed on a variety of commercially available refractory carbides, nitrides, oxides, and borides to examine the potential of these materials for applications involving either direct contact with molten silicon or as substrates for CVD coatings in the fabrication of dies and crucibles for containing molten silicon. Simultaneous experiments were also conducted with CVD layers of SiC, Si3N4, and SiOxNy. Silicon nitride layers, deposited with NH3:SiH4 ratios ranging from 100:1 down to 5:1, were examined in sessile drop experiments to determine if the layers are degraded as a result of using lower reagent ratios. Preliminary experiments were undertaken on the stability of CVD Si3N4 near the melting point of silicon. Silicon ribbon segments were grown from vitreous carbon dies which had been coated with CVD Si3N4. Depending upon the purity of the die materials, ribbon resistivity values up to 40 Omega cm were obtained.

Duffy, M. T.↗
NASA NTRS1977

Synthesis of silane and silicon in a non-equilibrium plasma jet

The feasibility of using a non-equilibrium hydrogen plasma jet as a chemical synthesis tool was investigated. Four possible processes were identified for further study: (1) production of polycrystalline silicon photovoltaic surfaces, (2) production of SiHCl3 from SiCl4, (3) production of SiH4 from SiHCl3, and (4) purification of SiCl4 by metal impurity nucleation. The most striking result was the recognition that the strongly adhering silicon films, amorphous or polycrystalline, produced in our studies could be the basis for preparing a photovoltaic surface directly; this process has potential advantages over other vapor deposition processes.

Calcote, H. F.↗
NASA NTRS1978

Low cost silicon solar array project: Feasibility of low-cost, high-volume production of silane and pyrolysis of silane to semiconductor-grade silicon

Silicon epitaxy analysis of silane produced in the Process Development Unit operating in a completely integrated mode consuming only hydrogen and metallurgical silicon resulted in film resistivities of up to 120 ohms cm N type. Preliminary kinetic studies of dichlorosilane disproportionation in the liquid phase have shown that 11.59% SiH4 is formed at equilibrium after 12 minutes contact time at 56 C. The fluid-bed reactor was operated continuously for 48 hours with a mixture of one percent silane in helium as the fluidizing gas. A high silane pyrolysis efficiency was obtained without the generation of excessive fines. Gas flow conditions near the base of the reactor were unfavorable for maintaining a bubbling bed with good heat transfer characteristics. Consequently, a porous agglomerate formed in the lower portion of the reactor. Dense coherent plating was obtained on the silicon seed particles which had remained fluidizied throughout the experiment.

Breneman, W. C.↗
NASA NTRS1980

The middle-infrared spectrum of Saturn - Evidence for phosphine and upper limits to other trace atmospheric constituents

Observations of Saturn at high spectral resolution in the middle-IR spectral region (2.5-5.6 microns) were obtained using a Fourier spectrometer at ground-based and airborne observatories. These spectra establish that PH3 exists on Saturn with an abundance at least equal to the solar P/H value, and probably enhanced by about a factor of 2. No evidence is found for gaseous or solid NH3 on Saturn throughout this spectral region, and upper limits to several other molecules (H2O, HCN, SiH4, and GeH4) are determined. Frequent comparisons of the spectral data for Saturn with observations and interpretations of IR studies of Jupiter show that these two planetary atmospheres are chemically similar, with major observational differences accounted for by reduced H2O and NH3 abundances in Saturn's colder atmosphere.

Larson, H. P.↗
NASA NTRS1981

Nitridation of silicon

Silicon powders with three levels of impurities, principally Fe, were sintered in He or H2. Non-densifying mechanisms of material transport were dominant in all cases. High purity Si showed coarsening in He while particle growth was suppressed in H2. Lower purity powder coarsened in both He and H2. The same three Si powders and Si /111/ single crystal wafers were nitrided in both N2 and N2/H2 atmospheres. Hydrogen increased the degree of nitridation of all three powders and the alpha/beta ratio of the lower purity powder. Some Si3N4 whiskers and open channels through the surface nitride layer were observed in the presence of Fe, correlating with the nitridation-enhancing effects of Fe. Thermodynamic calculations showed that when SiO2 is present on the Si, addition of H2 to the nitriding atmosphere decreases the amount of SiO2 and increases the partial pressure of Si-containing vapor species, that is, Si and SiO. Large amounts of NH3 and SiH4 were also predicted to form.

Shaw, N. J.↗
NASA NTRS1982

Thermodynamics of silicon nitridation - Effect of hydrogen

Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

Shaw, N. J.↗