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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Chemical constraints on the water and total oxygen abundances in the deep atmosphere of Jupiter

The mechanisms responsible for the observed H2O/H2 mixing ratio (HMR) in the Jovian troposphere are analyzed, with a focus on the relationship between HMR and O2 abundance and the abundance of the nonequilibrium trace gases CO and SiH4. The results of computations using a Jupiter atmosphere model consistent with recent observations (Bjoraker et al., 1986) are presented graphically and discussed in detail. It is found that the observed mixing ratios of CO (about 10 to the -9th) and SiH4 (upper limit 2-4 x 10 to the -9th) preclude O2 depletion and the presence of significant global H2O. The low observed HMRs (0.00003 at 6 bar) are tentatively attributed to local condensation in cloud-forming regions.

Fegley, Bruce, Jr.↗
NASA NTRS1988

SiH and the unidentified 4.6 micron feature

Results from experimental studies of the irradiation of SiH4-H2O and Fe(CO)5-SiH4-H2O ice mixtures at 15 K using 1 MeV protons have revealed the synthesis of a very stable infrared spectral feature at 4.6 microns which is characteristic of the SiH functional group. This feature persists through warmup of the ice, exposure to air at 300 K, and vacuum annealing to at least 400 K. Because of the high cosmic abundance of both silicon and hydrogen and the unexpected stability of the SiH feature in our experiments, it is suggested that SiH might be responsible for the 4.6 micron absorption feature observed in W33A.

Nuth, Joseph A.↗
NASA NTRS1988

Silane and germane plasma diagnostics for depositing photosensitive a-SiGe:H films

Highly photosensitive a-SiGe:H films with a light-to-dark conductivity ratio of 8 x 103 and an optical bandgap of 1.40 eV have been produced by RF glow discharge using hydrogen dilution of SiH4 and GeH4 mixed gas plasma. The critical role of hydrogen dilution in GeH4 containing plasmas is to suppress the gas-phase polymerization and promote the incorporation of Ge into the film. It is observed that inelastic laser light scattering of the RF plasma is a sensitive method for monitoring the onset of the gas-phase polymerization. In situ coherent anti-Stokes Raman spectroscopy measurements have shown that the dissociation rate of GeH4 is a factor of three larger than that of SiH4.

Shing, Y. H.↗
NASA NTRS1991

Instantaneous planar visualization of reacting supersonic flows using silane seeding

A new visualization technique for reacting flows has been developed. This technique, which is suitable for supersonic combustion flows, has been demonstrated on a scramjet combustor model. In this application, gaseous silane (SiH4) was added to the primary hydrogen fuel. When the fuel reacted, so did the (SiH4), producing silica (SiO2) particles in situ. The particles were illuminated with a laser sheet formed from a frequency-doubled Nd:YAG laser (532 nm) beam and the Mie scattering signal was imaged. These planar images of the silica Mie scattering provided instantaneous 'maps' of combustion progress within the turbulent reacting flowfield.

Smith, Michael W.↗
NASA NTRS1991

Growth and properties of amorphous silicon films grown using pulsed-flow reactive plasma beam epitaxy

The growth and properties of a-Si:H films grown using a novel deposition technique, reactive plasma beam epitaxy, are discussed. In this technique, a remote H plasma produced in a microwave-ECR reactor is used to grow a-Si:H films at low pressures. The H ions react with SiH4 introduced near the substrate to produce the film. The flow of SiH4 is pulsed on or off, thereby achieving in-situ annealing of the film during growth by H ions and radicals. The films produced by this technique appear to have good electronic quality, and are more stable than the standard glow discharge films.

Dalal, Vikram L.↗
DOE OSTI2021

Correlation of Early-Stage Growth Process Conditions with Dislocation Evolution in MOCVD-Based GaP/Si Heteroepitaxy

To identify the complex relationships between early-stage growth processes and the resultant defect microstructure in GaP/Si heteroepitaxy, a holistic study of several key metal-organic chemical vapor deposition (MOCVD) parameters was conducted, focusing on Si surface preparation and GaP atomic layer epitaxy (ALE) based nucleation processes. Here, crystalline defects related to the lattice mismatch and/or interfacial heterovalency, namely misfit dislocations (MD), threading dislocations (TD), and stacking fault pyramids (SFP), were quantitatively characterized via electron channeling contrast imaging (ECCI) and correlated against the different process variations. Choice of Si surface preparation method between the two examined (dilute SiH4 annealing versus Si2H6 based homoepitaxy) had little impact on resultant GaP film morphology and defect content, whereas differing GaP ALE nucleation conditions produced much more substantial changes. In particular, the initial precursor species (tert-butylphosphine versus triethygallium) and ALE cycle purge times both yielded significant influence over threading dislocation densities (TDD) in thin (100 nm), post-critical thickness GaP/Si films, with TDD spanning two orders of magnitude, from 6.7×10 7 cm -2 to 7.1×10 5 cm -2 , depending on the specific process conditions employed. SFP densities were also found to follow a similar trend, ranging from 2.0×10 7 cm -2 to 1.8×10 5 cm -2 , but with no apparent causal relationship between SFP density and TDD. To help explain the dramatic differences observed, detailed, large-area MD network characterization was used to provide statistically-relevant quantitative analyses of the critical dislocation dynamics (introduction rates and glide velocities) associated with the different process variants. These extracted values are then correlated against the ALE process variants to provide insight into the potential mechanistic roles of the different growth processes.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on SiH8 by Materials Project

SiH4(H2)2 is Silicon tetrafluoride-like structured and crystallizes in the tetragonal I-4m2 space group. The structure is zero-dimensional and consists of four hydrogen molecules and two silane molecules.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on SiH8 by Materials Project

SiH4(H2)2 is Silicon tetrafluoride-like structured and crystallizes in the orthorhombic Pmn2_1 space group. The structure is zero-dimensional and consists of four dihydrogen molecules and two silicon hydride molecules.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Wafer-Free Crystalline Silicon Solar Cells (CRADA Final Report)

This CRADA project, based on the DOE Solar Energy Technologies Office (SETO) Solar Prize Voucher program, helped Leap Photovoltaics to develop methodologies to immobilize Si particles by permanently attaching them to an Al-coated substrate and thereby forming carrier-selective electrical contacts to the Si particles. The bigger goal was to help Leap Photovoltaics develop these immobilized and contacted particle arrays into relatively efficient, inexpensive, and industrially relevant solar cells. By using Si particles instead of wafers in a solar cell absorber layer, one can avoid costs associated with growing monocrystalline Si ingots, then diamond-sawing them into wafers, then processing wafers into cells – a mainstream practice in today's high-efficiency Si cell and module technology. Monocrystalline or polycrystalline Si particles can be obtained in various ways: for example, Si kerf from wafer sawing is monocrystalline; recycled Si cell wafers can be ball-milled into particles; particles can be grown using various gas-phase techniques (mostly from SiH4). These Si particles can be assembled onto a substrate and serve as an absorber layer for the solar cell, absorbing photons to generate photocarriers. The challenge with this technique is to collect photocarriers from individual Si particles, with separation of photogenerated electrons to the negative cell’s electrode and positive photogenerated holes to the positive electrode. Therefore, each particle must have two isolated, carrier-selective contacts: one for electrons and one for holes. Plus, particles need to be immobilized onto a solid substrate. The goal of this work was focused on the immobilization of Si particles and creating hole-selective contact to them at the same time, using industrially relevant Si photovoltaic (PV) cell technology: screen printing of Al back-surface field electrodes. This is used in the mainstream Propane Education and Research Council (PERC) technology for hole-collecting contacts at the back of the cell. The work performed at NREL consisted of screen printing of Al metal paste on substrates, spreading Si particles onto it, and thermally processing the structures to form hole-collecting contacts. The final structures were investigated by scanning electron microscopy (SEM) after focused ion beam (FIB) cross-sectioning and polishing. The work was done jointly by NREL staff and Leap Photovoltaics (Leap PV) employees stationed at NREL. The samples were then taken to Leap PV for further processing. Training the Leap PV employee on various NREL techniques (laser cutting, screen printing, thermal processing, characterization) was part of the scope.

14 SOLAR ENERGY↗
NASA NTRS1972

Toxic Hazards Research Unit annual technical report, 1972

The activities of the Toxic Hazards Research Unit (THRU) for the period of June 1971 through May 1972 are reviewed in this report. Acute inhalation toxicity experiments were conducted on hydrogen chloride (HCl) gas and aerosol, ethyl bromide (C2H5Br), hydrogen bromide (HBr), hydrogen sulfide (H2S), ammonia (NH3), chlorine (CL2), and silane (SiH4). Subacute toxicity studies were conducted on chlorine pentafluoride (ClF5), dichloromethane (CH2Cl2) and coal tar volatiles. Further toxicity studies of subacute and chronic responses to inhaled monomethylhydrazine (MMH) are also described.

Macewen, J. D.↗
NASA NTRS1974

Characterization of charge states of energetic ions in solids from associated K X-ray production

The strong projectile-charge-state dependence of K X-ray production in gases establishes a charge-state scale for ions penetrating solids. Si K X-ray cross sections in gaseous SiH4 were compared to those in solid Si for 40-MeV O (6+ to 8+) and 86-MeV Ar (6+ to 16+) projectiles. For Ar an effective charge of 11 plus or minus one is found compared to an emergent charge of 14.8 plus or minus 0.5. The result is discussed in terms of alternate models for steady-state excitation in solids.

Datz, S.↗
NASA NTRS1975

Epitaxial solar cells fabrication

Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

Daiello, R. V.↗
NASA NTRS1976

Chemical vapor deposition growth

A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature.

Ruth, R. P.↗
NASA NTRS1976

Scattering of high-velocity He atoms by C/CH3/4 and Si/CH3/4

Fast helium beams are employed to probe short-range potentials in tetramethylmethane and tetramethylsilane, and throw light on the relations between these more complex reactions and such reactions as He-CH4 and He-SiH4. Earlier work on scattering of helium and argon beams by polyatomic molecules (fluorinated methanes, sulfur hexafluoride, silane, germane) are at variance with these results, as neither of the above systems can be represented as a cluster of four CH4 molecules, Effective He-H potentials based on scattering data are identical for the two systems studied but are much larger than the corresponding CH4 potential. A model in which centers of force are located along the bonds rather than at the nuclei is suggested for further testing.

Amdur, I.↗
NASA NTRS1976

Differences in the production of noncharacteristic radiation in gaseous and solid targets

Bell et al. (1975) found that the observed yield of noncharacteristic radiation (NCR) for a beam of S atoms hitting Al and Ne targets is of approximately equal magnitude for gaseous and solid targets under similar collision conditions. They concluded that NCR is produced predominantly in single collisions for 55-MeV S atoms on an Al target. This conclusion is tested in a similar collision system by comparing the NCR yields obtained with a 40-MeV Si(6+) ion beam on SiH4 (gaseous target) and on Al (solid target). Corrected X-ray spectra recorded in both cases clearly indicate a difference in the NCR yield for gaseous and solid targets. The results suggest that double collisions dominate the NCR production and that a single-collision production contribution of 15% to 20% is an upper limit for the projectile-target system used.

Laubert, R.↗
NASA NTRS1976

Chemistry and spectroscopy of the Jovian atmosphere

A comprehensive review is given of the chemistry and spectroscopic studies of the Jovian atmosphere. Thermochemical equilibrium models for determining atmospheric composition are considered along with possible disequilibrating processes, and studies of the photochemistry of H2, CH4, NH3, H2S, and PH3 using the modeling methods are summarized. It is shown that photodissociation and advection are the major disequilibrating processes in Jupiter's atmosphere, that lightning and charged-particle bombardment are relatively minor factors in the planet's bulk chemistry, and that the existence of living organisms on the planet is highly improbable. Spectroscopic investigations of Jupiter are discussed, emphasizing recent observations of absorption bands due to CH4, NH3, H2, He, and D. Spectroscopic abundance determinations are examined for H2, HD, CH4, CH3D, NH3, C2H6, C2H2, and PH3. Upper limits are given for the abundances of several unobserved gases in the visible atmosphere, including H2S, HCl, SiH4, benzene, purines, pyrimidines, and their derivatives.

Prinn, R. G.↗
NASA NTRS1976

Applications of beam-foil spectroscopy to atomic collisions in solids

Some selected papers presented at the Fourth International Conference on Beam-Foil Spectroscopy, whose results are of particular pertinence to ionic collision phenomena in solids, are reviewed. The topics discussed include solid target effects and means of surmounting them in the measurement of excited projectile ion lifetimes for low-energy heavy element ions; the electron emission accompanying the passage of heavy particles through solid targets; the collision broadening of X rays emitted from 100 keV ions moving in solids; residual K-shell excitation in chlorine ions penetrating carbon; comparison between 40 MeV Si on gaseous SiH4 targets at 300 mtorr and 40 MeV Si on Al; and the emergent surface interaction in beam-foil spectroscopy. A distinct overlap of interests between the sciences of beam-foil spectroscopy and atomic collisions in solids is pointed out.

Sellin, I. A.↗