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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure

Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor–liquid–solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current–voltage ( I d – V g ) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Metalorganic chemical vapor deposition-regrown Ga-rich InGaP films on SiGe virtual substrates for Si-based III-V optoelectronic device applications

Ga-rich InGaP materials are attractive applications for yellow-green spectral range optoelectronics such as light-emitting diodes and solar cells on silicon substrate. Bulk, Ga-rich InGaP films grown by metalorganic chemical vapor deposition on SiGe virtual substrates were investigated in the V/III compositional ratio range of 44.3–402 using chamber pressures from 100 to 200 mbar. These films were nominally lattice matched to the SiGe virtual substrate with a bandgap energy of 2.07–2.09 eV at low temperature (10 K). The authors show that the surface morphology of the Ga-rich InGaP films was dependent on the growth conditions, including the V/III gas phase ratio, pressure, and growth rate. By optimizing the growth conditions, the authors achieved improved surface morphologies of the Ga-rich InGaP films. The hillock density of the films produced using a V/III gas phase ratio of 44.3 and 75.4, a growth pressure of 100 mbar, and a growth rate of 0.9 μm/h was about an order of magnitude lower (30.3–50 × 104 cm−2) than that observed using higher V/III gas phase ratios such as 201 and 402. An increase in luminescence efficiency of Ga-rich InGaP materials was observed when the hillock density is lower. The authors discuss the mechanisms of the hillock formation.

Kim, TaeWan↗
NASA NTRS1989

Effect of Ga and P dopants on the thermoelectric properties of n-type SiGe

The purpose of this study was to hot-press improved n-type Si80Ge20/GaP samples directly (without any heat treatment) and to confirm that a Ga/P ratio less than one increases the solubility of P and, hence, improves the power factor and Z. One of the three samples (Ga/P = 0.43) had an improvement in Z of about 20 percent between 400 and 1000 C over that for standard SiGe. This demonstrates that improved samples can be pressed directly and that a Ga/P ratio less than one is necessary. The other two samples (Ga/P = 0.33 and 0.50) had Z's equal to or less than that of standard SiGe but had a lower hot-pressing temperature than the improved sample.

Draper, S. L.↗
NASA NTRS1992

Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

Lin, T. L.↗
NASA NTRS1991

Thermoelectric properties of hot pressed p-type SiGe alloys

This paper presents the results of measurements of electrical resistivity, Seebeck coefficient, thermal conductivity, as well as Hall carrier concentration, and mobility, for hot pressed SiGe 80 at. pct Si-20 at. pct Ge (SiGe) thermoelectric materials containing 0.24-3.0 at. pct boron. The carrier concentration was varied by annealing and quenching at different high temperatures. Figure-of-merit, Z, was found to be 0.60 +/- 0.03 x 10 exp -3/K over a carrier concentration range from 1.8- 3.5 x 10 exp -20/cu cm. This result is very encouraging from a production standpoint, since the dopant concentration is not critical.

Bajgar, Clara↗
NASA NTRS1994

The Effect of Strain on the Base Resistance and Transit Time of Ungraded and Compositional-Graded SiGe HBTs

A theoretical study of the effects of the strain on the base properties of ungraded and compositional-graded n-p-n SiGe Heterojunction Bipolar Transistors (HBT) is presented. The dependencies of the transverse hole mobility and longitudinal electron mobility upon strain, composition and doping, are formulated using published Monte-Carlo data and, consequently, the base resistance and transit time are modeled and calculated. The results are compared to results obtained using common formulas that ignore these dependencies. The differences between the two sets of results are shown. The paper's conclusion is that for the design, analysis and optimization of high frequency SiGe HBTs the strain effects on the base properties cannot be ignored.

Rosenfeld, D.↗
NASA NTRS2002

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Ringel, S. A.↗
NASA NTRS2006

Recent Results on SEU Hardening of SiGe HBT Logic Circuits

A viewgraph presentation on SEU tolerant SiGe HBT technology is shown. The topics include: 1) Introduction; 2) TID and SEU in SiGe Technology; 3) RHBD Techniques; 4) Experiment; 5) Heavy-Ion Data and Analysis; and 6) Summary.

Krithivasan, Ramkumar↗
NASA NTRS2009

High-Speed Single-Event Current Transient Measurements in SiGe HBTs

Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: 1) Position correlation. 2) Unique response for different bias schemes. 3) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: 1) Feedback using microbeam data 2) Overcome existing issues of LET and ion range with microbeam Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

Pellish, Jonathan A.↗
NASA NTRS2009

Heavy Ion Current Transients in SiGe HBTs

Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

Pellish, Jonathan A.↗
NASA NTRS2010

Evaluation of COTS SiGe, SOI, and Mixed Signal Electronic Parts for Extreme Temperature Use in NASA Missions

The NASA Electronic Parts and Packaging (NEPP) Program sponsors a task at the NASA Glenn Research Center titled "Reliability of SiGe, SOI, and Advanced Mixed Signal Devices for Cryogenic Space Missions." In this task COTS parts and flight-like are evaluated by determining their performance under extreme temperatures and thermal cycling. The results from the evaluations are published on the NEPP website and at professional conferences in order to disseminate information to mission planners and system designers. This presentation discusses the task and the 2010 highlights and technical results. Topics include extreme temperature operation of SiGe and SOI devices, all-silicon oscillators, a floating gate voltage reference, a MEMS oscillator, extreme temperature resistors and capacitors, and a high temperature silicon operational amplifier.

Patterson, Richard L.↗
NASA NTRS2018

Single Crystal Rhombohedral Epitaxy of Sige on Sapphire at 450.Degree. C.-500.Degree. C. Substrate Temperatures

Various embodiments may provide a low temperature (i.e., less than 850° C.) method of Silicon-Germanium (SiGe) on sapphire (Al2O3) (SiGe/sapphire) growth that may produce a single crystal film with less thermal loading effort to the substrate than conventional high temperature (i.e., temperatures above 850° C.) methods. The various embodiments may alleviate the thermal loading requirement of the substrate, which in conventional high temperature (i.e., temperatures above 850° C.) methods had surface temperatures within the range of 850° C.-900° C. The various embodiments may provide a new thermal loading requirement of the sapphire substrate for growing single crystal SiGe on the sapphire substrate in the range of about 450° C. to about 500° C.

Choi, Sang Hyouk↗
DOE OSTI2020

Materials Data on SiGe by Materials Project

SiGe is Zincblende, Sphalerite structured and crystallizes in the cubic F-43m space group. The structure is three-dimensional. Ge4+ is bonded to four equivalent Si4- atoms to form corner-sharing GeSi4 tetrahedra. All Ge–Si bond lengths are 2.42 Å. Si4- is bonded to four equivalent Ge4+ atoms to form corner-sharing SiGe4 tetrahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on SiGe by Materials Project

SiGe crystallizes in the monoclinic P2_1 space group. The structure is three-dimensional. there are eight inequivalent Ge4+ sites. In the first Ge4+ site, Ge4+ is bonded in a single-bond geometry to one Si4- atom. The Ge–Si bond length is 2.41 Å. In the second Ge4+ site, Ge4+ is bonded in a trigonal non-coplanar geometry to three Si4- atoms. All Ge–Si bond lengths are 2.42 Å. In the third Ge4+ site, Ge4+ is bonded in a single-bond geometry to one Si4- atom. The Ge–Si bond length is 2.42 Å. In the fourth Ge4+ site, Ge4+ is bonded in a trigonal non-coplanar geometry to three Si4- atoms. There are a spread of Ge–Si bond distances ranging from 2.42–2.44 Å. In the fifth Ge4+ site, Ge4+ is bonded in a single-bond geometry to one Si4- atom. The Ge–Si bond length is 2.43 Å. In the sixth Ge4+ site, Ge4+ is bonded in a trigonal non-coplanar geometry to three Si4- atoms. There are one shorter (2.42 Å) and two longer (2.43 Å) Ge–Si bond lengths. In the seventh Ge4+ site, Ge4+ is bonded in a trigonal non-coplanar geometry to three Si4- atoms. There are a spread of Ge–Si bond distances ranging from 2.42–2.44 Å. In the eighth Ge4+ site, Ge4+ is bonded in a single-bond geometry to one Si4- atom. The Ge–Si bond length is 2.41 Å. There are eight inequivalent Si4- sites. In the first Si4- site, Si4- is bonded to one Ge4+ and three Si4- atoms to form corner-sharing SiSi3Ge tetrahedra. There are one shorter (2.38 Å) and two longer (2.39 Å) Si–Si bond lengths. In the second Si4- site, Si4- is bonded to three Ge4+ and one Si4- atom to form corner-sharing SiSiGe3 tetrahedra. The Si–Si bond length is 2.38 Å. In the third Si4- site, Si4- is bonded to one Ge4+ and three Si4- atoms to form corner-sharing SiSi3Ge tetrahedra. There are one shorter (2.37 Å) and two longer (2.38 Å) Si–Si bond lengths. In the fourth Si4- site, Si4- is bonded to three Ge4+ and one Si4- atom to form corner-sharing SiSiGe3 tetrahedra. The Si–Si bond length is 2.36 Å. In the fifth Si4- site, Si4- is bonded to one Ge4+ and three Si4- atoms to form corner-sharing SiSi3Ge tetrahedra. In the sixth Si4- site, Si4- is bonded to three Ge4+ and one Si4- atom to form corner-sharing SiSiGe3 tetrahedra. In the seventh Si4- site, Si4- is bonded to three Ge4+ and one Si4- atom to form corner-sharing SiSiGe3 tetrahedra. In the eighth Si4- site, Si4- is bonded to one Ge4+ and three Si4- atoms to form corner-sharing SiSi3Ge tetrahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Controlled Formation of Stacked Si Quantum Dots in Vertical SiGe Nanowires

In this work, we demonstrate the ability to fabricate vertically stacked Si quantum dots (QDs) within SiGe nanowires with QD diameters down to 2 nm. These QDs are formed during high-temperature dry oxidation of Si/SiGe heterostructure pillars, during which Ge diffuses along the pillars’ sidewalls and encapsulates the Si layers. Continued oxidation results in QDs with sizes dependent on oxidation time. The formation of a Ge-rich shell that encapsulates the Si QDs is observed, a configuration which is confirmed to be thermodynamically favorable with molecular dynamics and density functional theory. The type-II band alignment of the Si dot/SiGe pillar suggests that charge trapping on the Si QDs is possible, and electron energy loss spectra show that a conduction band offset of at least 200 meV is maintained for even the smallest Si QDs. Our approach is compatible with current Si-based manufacturing processes, offering a new avenue for realizing Si QD devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Humble planar defects in SiGe nanopillars

We report a {001} planar defect found in SiGe nanopillars. The defect structure, determined by atomic-resolution electron microscopy, matches the Humble defect model proposed for diamond. We also investigate several possible variants of the Humble structure using first-principles calculations and find that the one lowest in energy is in agreement with the scanning transmission electron microscope images. The pillar composition has been analyzed with electron energy loss spectroscopy, which hints at how the defect is formed. Our results show that the structure and formation process of defects in nanostructured group IV semiconductors can be different from their bulk counterparts.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Unifying first-principles theoretical predictions and experimental measurements of size effects in thermal transport in SiGe alloys

We demonstrate the agreement between first-principles calculations and experimental measurements of size effects in thermal transport in SiGe alloys without fitting parameters. Transient thermal grating (TTG) is used to measure the effect of the grating period on the temperature decay. The virtual crystal approximation under the density-functional-theory framework combined with impurity scattering is used to determine the phonon properties for the exact alloy composition of the measured samples. With these properties, classical size effects are calculated for the experimental geometry of reflection mode TTG using the recently developed variational solution to the phonon Boltzmann transport equation, which is verified against established Monte Carlo simulations. Here, we find agreement between theoretical predictions and experimental measurements in the reduction of thermal conductivity (as much as fourfold of the bulk value) across grating periods spanning one order of magnitude. This paper provides a framework for the study of size effects in thermal transport in opaque materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗