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30 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Evaluation of Selected Chemical Processes for Production of Low-cost Silicon, Phase 3

The construction and operation of an experimental process system development unit (EPSDU) for the production of granular semiconductor grade silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles is presented. The construction of the process development unit (PDU) is reported. The PDU consists of four critical units of the EPSDU: the fluidized bed reactor, the reactor by product condenser, the zinc vaporizer, and the electrolytic cell. An experimental wetted wall condenser and its operation are described. Procedures are established for safe handling of SiCl4 leaks and spills from the EPSDU and PDU.

Blocher, J. M., Jr.↗
NASA NTRS1978

A shock-tube measurement of the SiO/E 1 Sigma + - X 1 Sigma +/ transition moment

The sum of the squares of the electronic transition moments for the (E 1 Sigma +) - (X 1 Sigma +) band system of SiO has been determined from absorption measurements conducted in the reflected-shock region of a shock tube. The test gas produced by shock-heating a mixture of SiCl4, N2O, and Ar, and the spectra were recorded photographically in the 150-230-nm wavelength range. The values of the sum of the squares were determined by comparing the measured absorption spectra with those produced by a line-by-line synthetic spectrum calculation. The value so deduced at an r-centroid value of 3.0 bohr was 0.86 + or - 0.10 atomic unit.

Park, C.↗
NASA NTRS1978

Development of a process for high capacity-arc heater production of silicon

The realization of low cost, electric power from large-area silicon, photovoltaic arrays will depend on the development of new methods for large capacity production of solar grade (SG) silicon with a cost of less than $10 per kilogram by 1986 (established Department of Energy goal). The objective of the program is to develop a method to produce SG silicon in large quantities based on the high temperature-sodium reduction of silicon tetrachloride (SiCl4) to yield molten silicon and the coproduct salt vapor (NaCl). Commercial ac electric arc heaters will be utilized to provide a hyper-heated mixture of argon and hydrogen which will furnish the required process energy. The reactor is designed for a nominal silicon flow rate of 45 kg/hr. Analyses and designs have been conducted to evaluate the process and complete the initial design of the experimental verification unit.

Reed, W. H.↗
NASA NTRS1980

Method of producing silicon

A liquid reactant injector assembly suited for the injection of liquid reactant into a high temperature metal reductant vapor and carrier gas stream for the production of metal is presented. The assembly is especially adapted for the continuous production of high purity silicon by the reduction of SiCl4 with sodium. The assembly includes a refractory-lined, hollow metal shell having ten equally-spaced, concentric, radially directed ports provided in the shell and wall. A hydraulic, atomizing type spray nozzle is mounted in each of the ports recessed from the inner wall surface.

Wolf, C. B.↗
NASA NTRS1982

Flat-plate solar array project. Task 1: Silicon material. Investigation of the hydrochlorination of SiC14

A two inch diameter stainless steel reactor was designed and built to operate at pressures up to 500 psig for the experimental studies on the hydrochlorination of SiCl4 and metallurgical grade (m.g.) silicon metal to SiHCl3. In order to clearly see the effect of pressure, the experiments were carried out at low reactor pressures of 73 psig and 150 psig, respectively. A large pressure effect on the hydrochlorination reaction was observed between the results of the low pressure experiments and the results of the high pressure experiments. In general, higher pressure produces a higher conversion of SiHCl3, but at a lower reaction rate. The effect of temperature on the reaction rate was studied at 73 psig. Higher reaction temperature gave a higher conversion and a higher reaction rate. Samples of the materials used to construct the hydrochlorination reactor were prepared for corrosion tests.

Mui, J. Y. P.↗
NASA NTRS1980

Development of a process for high capacity arc heater production of silicon for solar arrays

A high temperature silicon production process using existing electric arc heater technology is discussed. Silicon tetrachloride and a reductant, liquid sodium, were injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction occurred, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon were developed. The desired degree of separation was not achieved. The electrical, control and instrumentation, cooling water, gas, SiCl4, and sodium systems are discussed. The plasma reactor, silicon collection, effluent disposal, the gas burnoff stack, and decontamination and safety are also discussed. Procedure manuals, shakedown testing, data acquisition and analysis, product characterization, disassembly and decontamination, and component evaluation are reviewed.

Meyer, T. N.↗
NASA NTRS1981

New technologies for solar energy silicon - Cost analysis of dichlorosilane process

A reduction in the cost of silicon for solar cells is an important objective in a project concerned with the reduction of the cost of electricity produced with solar cells. The cost goal for the silicon material is about $14 per kg (1980 dollars). The process which is currently employed to produce semiconductor grade silicon from trichlorosilane is not suited for meeting this cost goal. Other processes for producing silicon are, therefore, being investigated. A description is presented of results obtained for the DCS process which involves the production of dichlorosilane as a silicon source material for solar energy silicon. Major benefits of dichlorosilane as a silicon source material include faster reaction rates for chemical vapor deposition of silicon. The DCS process involves the reaction 2SiHCl3 yields reversibly SiH2Cl2 + SiCl4. The results of a cost analysis indicate a total product cost without profit of $1.29/kg of SiH2Cl2.

Yaws, C. L.↗
NASA NTRS1984

Behavior of Al2O3 and SiO2 with heating in a Cl2 + CO stream

Differential thermal analysis (DTA) and Thermogravimetric analysis (TGA) were used to study the chlorination of alpha-Al2O3, gamma-Al2O3 and amorphous SiO2 in a Cl + CO stream, for the preparation of AlCl3 and SiCl4. The chlorination starting temperatures were 235 deg for Al2O3 and 680 deg for SiO2. The chlorination of alpha- and gamma-Al2O3 takes place via the formation of AlOCl as an intermediate product, and its subsequent dissociation at 480 to 560 deg, according to 3AlOCl yields AlCl3 + Al2O3. The chlorination activation energies are given for the three oxides.

Shchetinin, L. K.↗
NASA NTRS1988

Reactions of silicon-based ceramics in mixed oxidation chlorination environments

The reaction of silicon-based ceramics with 2 percent Cl2/Ar and 1 percent Cl2/1 percent to 20 percent O2/Ar at 950 C was studied with thermogravimetric analysis and high-pressure mass spectrometry. Pure Si, SiO2, several types of SiC, and Si3N4 were examined. The primary corrosion products were SiCl4(g) and SiO2(s) with smaller amounts of volatile silicon oxychlorides. The reactions appear to occur by chlorine penetration of the SiO2 layer, and gas-phase diffusion of the silicon chlorides away from the sample appears to be rate limiting. Pure SiO2 shows very little reaction with Cl2, SiC with excess Si is more reactive than the other materials with Cl2, whereas SiC with excess carbon is more reactive than the other materials with Cl2/O2. Si3N4 shows very little reaction with Cl2. These differences are explained on the basis of thermodynamic and microstructural factors.

Marra, John E.↗
NASA NTRS1992

Large area solar cells from lunar materials

The first goal of the project was to produce polymers from materials available on the Moon. This, apparently simple, aim is made complicated by the fact that there is no carbon on the Moon and there are no polymers (with a couple of irrelevant exceptions) known which do not contain carbon. Because of the abundance of silicon and oxygen in the lunar regolith, it was decided to aim to produce siloxane polymers with the (-Si-O-) backbone found in silicones. A univalent side group is also needed but there are no univalent elements available in the regolith which could plausibly make stable structures. Failing this, hydrogen is a good choice for side group since it accounts for a small fraction of the total weight of the polymer. Thus, a group of target structures such as (-SiH2-O-)n, (-Si(OH)2-O-)n is determined. This goal was approached via a series of simpler syntheses. During the first year, polydimethylsiloxane (-Si(CH3)2-O-)n was made by controlled hydrolysis of SiCl2(CH3)2, which is a routine synthesis, and then an attempt was made to make polydichlorosiloxane by controlled hydrolysis of SiCl4. At the end of the first year, some infra-red spectra indicated that this product had been obtained.

Bryant, Read↗
NASA NTRS1997

The Heats of Formation of SiCl+n, for n=1-4

The heats of formation of SiCl(sub n) and SiCl+(sub n), for n=1-4, have been determined using the G2(B3LYP/MP2/CC) approach. The results for the neutral systems are in very good agreement with previous work. High level calibration calculations show that ion results have about the same accuracy as the neutrals, and allow us to refine the G2(B3LYP/MP2/CC) values. The calculations show that the adiabatic IP of SiCl4 is about 7 kcal/mol smaller than the accepted value. Using a rigid rotor/harmonic oscillator approximation, the temperature dependence of the heat of formation, heat capacity, and entropy are computed for 300 to 4000 K and fit to a polynomial.

Bauschlicher, Charles W., Jr.↗
NASA NTRS2005

Silicon nanowire synthesis by a vapor-liquid-solid approach

Synthesis of silicon nanowires is studied by using a vapor-liquid-solid growth technique. Silicon tetrachloride reduction with hydrogen in the gas phase is used with gold serving as catalyst to facilitate growth. Only a narrow set of conditions of SiCl4 concentration and temperature yield straight nanowires. High concentrations and temperatures generally result in particulates, catalyst coverage and deactivation, and coatinglike materials.

Evaluation Studies↗