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Gate-Driver Integrated Junction Temperature Estimation of SiC MOSFET Modules
Not provided.
3.3-kV SiC MOSFET Performance and Channel-Length Related Short-Circuit Capability.
Abstract not provided.
Automotive-Qualified 3300 V SiC MOSFETs for next-generation extreme fast chargers
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Advanced Power Conversion Systems featuring SiC MOSFETs with In-Situ Restoration Capabilities
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Reliability Concerns for Flying SiC Power MOSFETs in Space
SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.
Reliability Concerns for Flying SiC Power MOSFETs in Space
SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.
Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs
Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.
An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs
Not provided.
Investigation of the Effect of Gate Oxide Screening with Adjustment Pulse on Commercial SiC Power MOSFETs
This paper presents a method to recover the negative threshold voltage shift during high field gate oxide screening of 1.2 kV 4H-SiC MOSFETs with an additional adjustment gate voltage pulse. To reduce field failure rates of the MOSFETs in operation, manufacturers perform a screening treatment to remove devices with extrinsic defects in the oxide. Current gate oxide screening procedures are limited to oxide fields at or below ~9 MV/cm for short durations (<1 s), which is not enough to remove all the devices with extrinsic defects. The results show that by implementing a lower field gate pulse, the threshold voltage shift can be partially recovered, and therefore the maximum screening field and time can be increased. However, both the initial screening pulse and the adjustment pulse require careful calibration to prevent significant degradation of the device threshold voltage, on-resistance, interface state density, or intrinsic lifetime. With a well calibrated set of pulses, higher screening fields can be utilized without significantly damaging the devices. This leads to an improvement in the overall screening efficiency of the process, reducing the number of devices with extrinsic oxide defects entering the field, and improving the reliability of the SiC MOSFETs in operation.
A New Class of SiC Power MOSFETs with Record-Low Resistance
Silicon carbide (SiC) power transistors are used in the main traction inverter of electric vehicles (EVs). Tesla began installing SiC power MOSFETs in 2017, and has now produced 4.8 million EVs containing over 169 million SiC power MOSFETs. Looking ahead, the worldwide EV market is projected to exceed 50 million vehicles per year by 2030 (Reuters, Oct. 25, 2022). This will create a demand for over two billion SiC power MOSFETs per year. Our program aims to double the efficiency of today's commercial power MOSFETs. This will cut the number of MOSFETs per EV in half, reducing cost, simplifying assembly, decreasing weight, and increasing vehicle reliability through reduced parts count. Our approach is to apply innovative design and advanced processing to increase the density of current-controlling channels in SiC power MOSFET. We have developed two new MOSFET devices, each of which increases the channel density by a factor of six over today's best commercial MOSFETs. This required implementing new fabrication processes, creating new device designs, and integrating the processing steps and device designs into a manufacturable technology. In this project we have developed two innovative devices: (i) a novel three-dimensional structure, the "tri-gate MOSFET," and (ii) a deeply-scaled, fully self-aligned trench MOSFET, the "IMOSFET". Both products were experimentally demonstrated during this project and meet the program goals of increased efficiency relative to the current state-of-the art commercial products. In the process we have generated significant IP, with two US patents issued and three applications pending. We have also published three journal articles and given reports on this technology at seven international conferences. The success of this program has led to significant follow-on funding from industry. In May 2023 Purdue University signed a five-year R&D contract with GlobalFoundries to transfer our novel technology to commercial production. With headquarters in Malta, NY, Global Foundries is one of the largest pure-play silicon foundries in the world, with annual revenue of $\$$8.1B. Their SiC foundry will be built around the next-generation 200-mm diameter SiC wafers, which will double the number of die per wafer and reduce per-die production cost.