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All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Growth and Characterization of 3C-SiC and 2H-AIN/GaN Films and Devices Produced on Step-Free 4H-SiC Mesa Substrates

While previously published experimental results have shown that the step-free (0 0 0 1) 4H-SiC mesa growth surface uniquely enables radical improvement of 3C-SiC and 2H-AlN/GaN heteroepitaxial film quality (greater than 100-fold reduction in extended defect densities), important aspects of the step-free mesa heterofilm growth processes and resulting electronic device benefits remain to be more fully elucidated. This paper reviews and updates recent ongoing studies of 3C-SiC and 2H-AlN/GaN heteroepilayers grown on top of 4H-SiC mesas. For both 3C-SiC and AlN/GaN films nucleated on 4H-SiC mesas rendered completely free of atomic-scale surface steps, TEM studies reveal that relaxation of heterofilm strain arising from in-plane film/substrate lattice constant mismatch occurs in a remarkably benign manner that avoids formation of threading dislocations in the heteroepilayer. In particular, relaxation appears to occur via nucleation and inward lateral glide of near-interfacial dislocation half-loops from the mesa sidewalls. Preliminary studies of homojunction diodes implemented in 3C-SiC and AlN/GaN heterolayers demonstrate improved electrical performance compared with much more defective heterofilms grown on neighbouring stepped 4H-SiC mesas. Recombination-enhanced dislocation motion known to degrade forward-biased 4H-SiC bipolar diodes has been completely absent from our initial studies of 3C-SiC diodes, including diodes implemented on defective 3C-SiC heterolayers grown on stepped 4H-SiC mesas.

Neudeck, P. G.↗
DOE OSTI2014

Nanocrystalline SiC and Ti 3 SiC 2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

MAX phases, such as titanium silicon carbide (Ti 3 SiC 2 ), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti 3 SiC 2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti 3 SiC 2 . Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti 3 SiC 2 , SiC, and a dual-phase nanocomposite of Ti 3 SiC 2 /SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti 3 SiC 2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti 3 SiC 2 occurs during ion implantation at 873 K. Cs in Ti 3 SiC 2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti 3 SiC 2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Improved damage tolerance of SiC-based nuclear fuel cladding with novel multi-layered SiC coating design at 1200 °C

Continuous SiC fibre reinforced SiC matrix composites (SiC f -SiC m ) with monolithic SiC outer coatings are considered as a damage-tolerant cladding design for loss of coolant accident (LOCA) conditions in light water reactors. However, monolithic SiC coatings are brittle and prone to catastrophic failure. In this study, a SiC f -SiC m cladding with a novel multi-layer SiC outer coating (11 sub-layers, ∼260 µm in total thickness) was investigated under C-ring compression at room temperature and 1200 °C in argon environment. Real-time synchrotron X-ray computed tomography (XCT) was employed to capture crack initiation and propagation processes. Compared to conventional monolithic SiC outer coatings, the multi-layer coating structure facilitated crack deflection and bifurcation enhancing its damage tolerance at both temperatures. Despite pre-existing surface cracks, claddings exhibited stable mechanical-performance at both temperatures. These initial cracks did not critically affect the failure processes as they were not aligned with the maximum stress direction. Furthermore, the microstructure, distribution of residual stresses, and local properties of individual components in the material were thoroughly characterized, and compared with open literature on conventional claddings with monolithic outer coatings. These results provide new insights into the failure mechanisms of multi-layer SiC coatings and offer guidance for the future design of accident-tolerant nuclear fuel claddings.

36 - MATERIALS SCIENCE↗
NASA NTRS1998

Oxygen Impurities and Defects in Epitaxial Layer SiC and SiC Wafer Characterized by Room and Low Temperatures FTIR

SiC as a highly promising semiconducting material has received increasing attention in the last decade. The impurities such as oxygen and hydrogen have a great effect in electronic properties of semiconducting materials. In this study, the FTIR spectra were measured at room temperature (25 C) and low temperature (-70 C) for an n-type SiC substrate, a p-type epitaxial layer SiC, and patterned Ta on a p-type epitaxial layer SiC sample. The oxygen related IR peaks were measured for all three samples at room and low temperatures. The peak at 1105 cm(exp -1) is the result of a substitutional carbon and a interstitial oxygen in SiC. The concentration of the impurity oxygen increases in the SiC epitaxial layer during the CVD and electron beam processes. For the n-type SiC substrate, this peak does not appear. The peak at 905 cm(exp -1) exists in the IR spectra only for two epitaxial layer on p-type SiC substrate samples. This peak is related to oxygen vacancy centers in SiC, which are introduced in the CVD epitaxial growth process. At low temperature, the peak at 1105 cm(exp -1) shifts down and the peak at 905 cm(exp -1) shifts up for the epitaxial layer SiC samples. It can be explained that, at low temperatures, the stress increases due to the distorted bonds. The study shows that FTIR is a very effective method to evaluate low concentration impurities in SiC.

Lu, W. J.↗
DOE OSTI2016

Sic-Sic Composite Interphase Evaluation via Small Scale Mechanical Testing

Silicon carbide (SiC) has emerged as a highly capable engineering material for extreme environment applications. It has proven particularly useful for high temperature applications where it exhibits exceptional strength, relative chemical inertness, and low coefficient of thermal expansion. Recent studies have shown that SiC also has excellent neutronic properties including low thermal neutron absorption, low tritium permeability, and high radiation tolerance. As a result, SiC-SiC composites are being considered for application in accident tolerant fuel cladding and other structural components for fission and fusion reactors. The standard crystalline form of SiC is inherently brittle and therefore subject to low damage tolerance. In order to increase the material toughness, SiC-SiC fiber-matrix composites have been developed. These composites are divided into three constituents; a highly crystalline and near stoichiometric SiC fiber (commonly Hi-Nicalon{sup TM} Type-S or Tyranno{sup TM}-SA), a (layered) interphase of graphitized pyrolytic carbon (PyC) around the fiber, and a chemical vapor infiltrated (CVI) SiC matrix that consolidates the material. Increased toughness is achieved through two primary mechanisms: increasing the crack length by introducing more barriers, and fiber pullout via interphase shear within the matrix. As a result, it has become critically important to understand the fundamental properties of SiC-SiC composites. However, comprehensive material properties are difficult to predict unless we have an in depth knowledge of the individual constituents (fiber, matrix, interphase) and how their properties interact with one another at the micro-scale. Of specific interest to this work are the interfacial properties of the fiber-matrix interface. This includes the internal friction coefficient and interfacial debond shear stress. (authors)

36 MATERIALS SCIENCE↗
DOE OSTI2014

Laboratory detections of SiC{sub 2}N and SiC{sub 3}N by Fourier transform microwave spectroscopy

Two silicon-bearing carbon chain radicals, SiC{sub 2}N and SiC{sub 3}N, were detected in the laboratory by Fourier transform microwave spectroscopy. Molecular constants including the hyperfine coupling constants have been determined for the two radicals in the ground electronic states. The SiC{sub 2}N and SiC{sub 3}N radicals have linear structures in the {sup 2}Π ground electronic states with inverted and regular fine structures, respectively, as are the cases for their isoelectronic radicals, SiC{sub 3}H and SiC{sub 4}H, indicating that the SiC{sub n}N radicals have similar electronic structures to the SiC{sub n+1}H radicals. The electronic structures of SiC{sub 2}N and SiC{sub 3}N in the ground states are discussed on the basis of the experimentally determined molecular constants.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Performance and Techno-Economic Evaluation of a Three-Phase, 50-kW SiC-Based PV Inverter

The technical capabilities and benefits of silicon carbide (SiC) compared to silicon (Si) based power electronics converters as well as the premium associated with using SiC instead of Si are well understood. This work proves that the benefits provided by SiC, such as increased efficiency, would result in a lower levelized cost of energy (LCOE) compared to both commercially available, state-of-the-art inverters and the benchmark commercial system cost calculated for the U.S. Department of Energy Solar Energy Technologies Office's SunShot program. The LCOE is calculated to be same as the commercial benchmark despite the installed system cost being 8% more than the benchmark. The LCOE calculation is based on both experiential values obtained from testing the SiC photovoltaic (PV) inverter and on the bottoms-up modeled volume cost for the same 50-kW SiC-based inverter. The PV system used for the LCOE model is also explained, and the system cost breakout is presented in this paper. Furthermore, multiple scenarios with variations in the PV system are presented to show their effect on the system LCOE.

14 SOLAR ENERGY↗
DOE OSTI2016

Thermal Diffusivity Measurement of Irradiated SiC-SiC Composite Material

Silicon Carbide fiber and matrix composite (SiC-SiC) is being considered as a fuel cladding candidate because of its high melting point, low susceptibility to corrosion, good thermal and mechanical shock resistance, and low degradation of mechanical properties under irradiation. The thermal properties of SiC-SiC composite depend heavily on the fabrication process, thus cannot be simply referenced from available database. Similarly, the influence of irradiation on SiC-SiC composite thermal properties needs to be measured to provide general trends of property degradation. For ion irradiated samples, the damaged layer is only a few to a few tens of micrometers. It is impossible to directly measure the bulk property change of a SiC-SiC composite because of the thin, damaged layer. This paper focuses on a methodology that is based on microscale measurement of fiber and matrix properties to determine the overall bulk property change due to ion irradiation. Laser-based photothermal reflectance technique is one of the ideal methods to measure local thermal conductivity and diffusivity with high spatial resolution. The main principle of this technique is to heat the solid sample using an intensity-modulated laser, and scan the sample with a constant intensity continuous-wave (CW) laser to detect the phase lag of the thermal wave propagation. On bulk, isotropic material, if the heating laser intensity is modulated as a sine wave, thermal diffusivity of the sample can be derived from the phase lag, scan distance and modulation frequency in a straight forward manner. By using more specific analytical models, thermal conductivity and diffusivity in complicated cases, such as layered structure materials, composite materials, and/or anisotropic materials, are measurable as well. In this work, a new measurement approach of SiC-SiC composite thermal diffusivity is presented. Due to the micrometer spatial resolution of the photothermal reflectance technique, the measurements are performed locally on fibers along both radial and axial directions, and on the matrix. The influence of Silicon ion irradiation (75 MeV, 10 dpa) is then examined by comparing the experimental results of samples before and after irradiation. (authors)

36 MATERIALS SCIENCE↗
DOE OSTI2019

SiO 2 –SiC Mixtures at High Pressures and Temperatures: Implications for Planetary Bodies Containing SiC

We present results from high–pressure and high–temperature experiments on mixtures of SiC and SiO 2 to explore the stability of SiC in the presence of oxygen–rich silicates at planetary mantle conditions. We observe no evidence of the ambient pressure predicted oxidation products, CO or SiO, resulting from oxidation reactions between SiC and SiO 2 at pressures up to ~40 GPa and temperatures up to ~2500 K. We observe the decomposition of SiC through releasing C, resulting in vacancies in the SiC lattice and consequently the contracted SiC ambient volume V0 observed in the heated regions of sample. The decomposition is further supported by the observations of diamond formation and the expanded SiO 2 V0 in the heated regions of samples indicating the incorporation of C into SiO2 stishovite. We provide a new interpretation of SiC decomposition on laboratory timescales, in which kinetics prevent the reaction from reaching equilibrium. We consider how the equilibrium decomposition reaction of SiC will influence the differentiation of a SiC–containing body on planetary timescales and find that the decomposition products may become isolated during early planetary differentiation. Here, the resulting presence of elemental Si and C within a planetary body may have important consequences for the compositions of the mantles and atmospheres of such planets.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Impact of control blade insertion on the deformation behavior of SiC-SiC channel boxes in BWRs

This article describes the analysis of distortion of a silicon carbide fiber-reinforced, silicon carbide matrix (SiC-SiC) composite channel box under in-reactor conditions of a boiling water reactor (BWR). The BWR core has significant gradients in the fast neutron flux across the channel box due to the presence of water rods within the fuel assemblies, and these gradients increase further with the insertion of control blades. As a result of the temperature and neutron flux dependent irradiation-induced swelling of SiC, the SiC-SiC composite channel box can undergo distortion. In this work, we evaluate the SiC-SiC channel box distortion for three different control blade positions. This analysis is based on the neutron flux and temperature distributions in the BWR core calculated using the neutronics code MPACT and thermal-hydraulics code CTF. This calculation is coupled through temperature feedback. Subsequently, we have performed structural analysis based on the calculated neutron flux and temperature distributions to determine the deformation and stress development in the channel box. The structural analysis was performed using the fuel performance modeling code BISON and the commercial finite element analysis software Abaqus. The results indicate that large gradients in fast neutron flux (up to 35–40% across a single axial level) will develop across the channel box. Due to these gradients, the channel box will undergo time-dependent bending for all the control blade positions in the assembly. The time-dependent bowing behavior is dominated by the transient swelling of SiC-SiC material under non-uniform neutron flux, and changes with variation in the control blade position. The bending will cause temporary interference between the channel box and control blade, and the interference is expected to be most severe for the fully inserted control blade position. The developed stresses due to differential swelling in the channel box exceed the proportional limit stress of the material, which may cause matrix microcracking in the channel box. However, the stresses remain below the tensile strength of the material, and therefore, development of a full, through-thickness crack in the channel box is not expected. Finally, further work is recommended to explore and evaluate the mitigation strategies.

42 ENGINEERING↗
DOE OSTI2019

Development of a Modeling Approach to Describe Thermal Conductivity of Prototypic SiC-SiC tubes for LWR Fuel Cladding

SiC-SiC composites are a promising material intended to be used as a for fuel cladding for Light Water Reactors (LWRs). This material has a high steam oxidation resistance, high strength and low neutron cross section. Thermal conductivity is one of the most important physical properties for assessing the performance of SiC based fuel cladding. However, there is a significant lack of data for tube materials because measurement is challenging owing to the specimen geometry. This report summarizes the modeling methodology, experimental methodologies and software that will be used to study the thermal conductivity of different SiC-SiC composite tubes. The proposed experiments described here, are directed to create a baseline of thermal conductivity values to validate experimental simulations. In order to obtain the thermal conductivity of these materials the Laser Flash Analysis (LFA) will be implemented to obtain the thermal diffusivity of flat and sections of round shape specimens. Thermal diffusivity experiments will be complemented by Finite Element Method (FEM) simulations and a branch of this methodology known as Image-Based Finite Element Method (IBFEM). The FEM simulations will help to identify the possible limitations of experimental measurements in round shape specimens and verify the results of experiments in flat shape samples. The results of the IBFEM will help to quantify the possible effects of porosity in SiC-SiC composites. The findings of the aforementioned activities will be also applied to SiC-SiC neutron irradiated tube samples in order to capture the damage produced by this ageing mechanism.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2019

Impact of Control Blade Insertion on the Deformation Behavior of SiC-SiC Channel Boxes in Boiling Water Reactors

This report describes the analysis of distortion of a Silicon carbide fiber-reinforced silicon carbide matrix (SiC-SiC) composite channel box under in-reactor conditions of a boiling water reactor (BWR). The BWR core has significant gradients in the fast neutron flux across the channel box due to the presence of water rods within the fuel assemblies, and these gradients increase further with the insertion of control blades. As a result of temperature and neutron flux dependent irradiation induced swelling of SiC, the SiC-SiC composite channel box can undergo significant distortion. In this work, we evaluate the SiC-SiC channel box distortion for three different control blade positions. This analysis is based on the neutron flux and temperature distributions in the BWR core calculated using the neutronics code MPACT and thermalhydraulics code CTF. This calculation is coupled through temperature feedback. Subsequently, we have performed structural analysis based on the calculated neutron flux and temperature distributions, to determine the deformation and stress development in the channel box. The structural analysis was performed using the fuel performance modeling code BISON and the commercial finite element analysis software Abaqus. The results indicate that the channel box will undergo time dependent lateral bowing for all the control blade positions in the assembly. The bowing behavior is dominated by the swelling of SiC-SiC material under non-uniform neutron flux, and changes with variation in the control blade position. The lateral bending will cause a temporary interference between the channel box and the control blade. The developed stresses exceed the proportional limit stress of the material, which may cause matrix microcracking in the channel box. However, the stresses remain below the ultimate tensile strength of the material, and therefore, development of a full, through thickness crack in the channel box is not expected.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2024

SMART SiC Power ICs: Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (Final Technical Report)

This collaborative project was initiated with the goal of developing Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (SMART SiC Power ICs). In pursuit of this objective, innovative designs and fabrication processes were implemented, enabling the development of large-scale (>1 cm²) SiC Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuits and high-voltage (400–600 V) lateral power MOSFETs (HV-LDMOS) on 150 mm 4H-SiC substrates. The resulting SMART SiC Power ICs are tailored to support a wide range of applications requiring diverse voltage and power levels, including automotive systems, industrial equipment, electronic data processing, energy harvesting, and power conditioning. To achieve the proposed ‘SMART’ technology for SiC ICs, the team focused on 1) the Development of highly scalable CMOS (with high channel mobilities for n-type and p-type MOSFETs), LDMOS (~600V, 10A rated), and IC technologies, 2) Establishment of a manufacturable process baseline in a production-grade-, 150mm, SiC fabrication facility, and 3) Demonstration of SMART SiC ICs. The project initially comprised of fabricating 5 lots. In lot 1 monolithic integration using a single process was achieved. Here, we were able to successfully accomplish Integrated HV NMOSFET with LV CMOS on N-epi/N+ Substrate. The HV NMOS demonstrated a Breakdown Voltage (BV) more than 600V. Circuit demonstration of CMOS was also another achievement from this lot. In lot 2, priority was in place for isolation and integration. Here we addressed the isolation concerns and integrated the HV NMOS and LV CMOS using the N-epi/P-epi/N+ substrate. Similar to the lot 1, we were able to achieve a BV of 600 V for HV NMOS. Optimized gate oxide process with high channel mobilities, better gate oxide reliability, development of SPICE models, successful ohmic process development, novel wafer area saving design layouts, P+ isolation schemes with channeling implantations and high temperature operational circuits demonstrations are some of the key highlights from lot 1 and lot2. In lot 3, discrete device performances of HV NMOS with a BV ~700V and reliable LV CMOS performances were achieved. Also, novel architectural solutions were successfully implemented to suppress the electric field crowding at the gate oxide for reliable operations. In lot 4, half bridge power driver ICs with a conversion efficiency of (target 90% to 95%) in the 1-5MHz switching frequency range for output power between 25 W to 3 kW have been included in. However, due to the unfortunate events of sudden foundry shutdown (SiCamore Semi) the processing of lot 4 wafers came to a complete stop (January 2024). Arrangements have recently been made to shift the fabrication to another foundry, General Electric Aerospace. The fabrication process now on course (as of December 2024). Characterizations are delayed due to this unfortunate circumstance. The proposed trench architectural-based devices and ICs (lot 5) underwent modifications from the original project proposal. This change was necessitated by limitations in the availability of trench-based processes at commercial production-grade fabrication facilities in the US. Apart from above achievements, a Process Development Kit (PDK) was successfully developed for planar type SiC CMOS/LDMOS.

42 ENGINEERING↗
DOE OSTI2019

Raman study of amorphization in nanocrystalline 3C-SiC irradiated with C+ and He+ ions

This study examines C+ and He+ ion irradiation induced amorphization processes in 3C-SiC nanograins embedded in an amorphous SiC matrix. Raman spectroscopy and Rutherford backscattering spectrometry are used for damage characterization. SiC grains with an average size of either ~6 or ~20 nm were observed to be fully amorphized to a lower dose at room temperature compared to their monocrystalline counterpart under the identical irradiation condition. In addition to damage accumulation induced amorphization in the grains, preferential amorphization at the crystalline/amorphous interfaces could play a significant role. This interface-driven amorphization proceeds at comparable rates for C+ and He+ ion irradiations. The results may have an important implication for nanocrystalline SiC to be applied in advanced nuclear reactors.

Amorphization, Ion irradiation, Silicon carbide, N↗