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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Flux-Assisted Boron Chalcogen Mixture (BCM) Method for Synthesizing Mixed Chalcogenide Semiconductors (AkRE 2 Si 2 Se x S 8– x and CaRE 2 Si 2 Se 8 ) ( Ak = Ca and Sr; RE = La, Ce, Pr, Nd, and Sm): Investigation of Their Magnetic and Optical Properties

We report a detailed structural analysis of a series of ten quaternary rare-earth-containing seleno-thiosilicates AkRE 2 Si 2 Se x S 8-x and selenosilicates, CaRE 2 Si 2 Se 8 (Ak = Ca and Sr; RE = La, Ce, Pr, Nd, and Sm). Single crystals were obtained by using the flux-assisted boron chalcogen mixture (BCM) method and single crystal X-ray diffraction was used to determine their structures. All members of the AkRE 2 Si 2 Se x S 8-x and CaRE 2 Si 2 Se 8 series crystallize in the space group R$\bar{3}$c (space group number 167) of the trigonal crystal system. The single-crystal X-ray diffraction analysis revealed a strong preference for Se/S atoms to occupy one vs. the other of the two available sites. Polycrystalline samples were used for magnetic susceptibility and UV–visible diffuse reflectance measurements. Magnetic measurements show that CaCe₂Si₂Se₁.₇₃S₆.₂₇ and CaNd₂Si₂Se₂.₅S₅.₅ are paramagnetic with negative Weiss constants (θ = –60.1 and –26.2). Diffuse reflectance analysis gives optical band gaps of 2.7(1) eV (CaLa₂Si₂Se₂.₃₈S₅.₆₂), 2.2(1) eV (CaCe₂Si₂Se₁.₇₃S₆.₂₇), 2.5(1) eV (CaNd₂Si₂Se₂.₅S₅.₅), and 2.0(1) eV (CaCe₂Si₂Se₈), consistent with density functional theory calculations. By partially or fully replacing S sites with Se it was possible to achieve band gap tuning. Photoluminescence behavior was also investigated for CaCe 2 Si 2 Se 1.73 S 6.27 via irradiation with 375 nm ultraviolet light.

BCM method↗
DOE OSTI2023

Influence of cation species on thermal expansion of Y 2 Si 2 O 7 –Gd 2 Si 2 O 7 solid solutions

Mixtures of Y 2 Si 2 O 7 and Gd 2 Si 2 O 7 were synthesized by solid-state reaction at 1600°C and characterized via in situ x-ray diffraction (XRD) to determine their coefficients of thermal expansion (CTE). All solid solutions within the system exhibited the orthorhombic δ-RE 2 Si 2 O 7 (Pna2 1 ) structure. Thermal expansion measurements of Y 2 Si 2 O 7 and Gd 2 Si 2 O 7 correlated well with reported values in literature, and all synthesized solid solutions exhibited CTEs between Y 2 Si 2 O 7 and Gd 2 Si 2 O 7 . Generally, there was a slight decrease in CTE exhibited by the materials with increasing Gd 2 Si 2 O 7 content, with Gd 2 Si 2 O 7 having the lowest CTEs and Y 2 Si 2 O 7 the highest CTEs. Here, the decrease in CTE was attributed to stronger bonds of Gd-O over Y-O, as determined by calculated crystal orbital Hamilton populations using density functional theory. However, such differences were very small and crystal structure was the dominating factor in CTE trends.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2000

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Das, K.↗
DOE OSTI2022

Nontrivial nanostructure, stress relaxation mechanisms, and crystallography for pressure-induced Si-I → Si-II phase transformation

Crystallographic theory based on energy minimization suggests austenite-twinned martensite interfaces with specific orientation, which are confirmed experimentally for various materials. Pressure-induced phase transformation (PT) from semiconducting Si-I to metallic Si-II, due to very large and anisotropic transformation strain, may challenge this theory. Here, unexpected nanostructure evolution during Si-I → Si-II PT is revealed by combining molecular dynamics (MD), crystallographic theory, generalized for strained crystals, and in situ real-time Laue X-ray diffraction (XRD). Twinned Si-II, consisting of two martensitic variants, and unexpected nanobands, consisting of alternating strongly deformed and rotated residual Si-I and third variant of Si-II, form {111} interface with Si-I and produce almost self-accommodated nanostructure despite the large transformation volumetric strain of -0.237. The interfacial bands arrest the {111} interfaces, leading to repeating nucleation-growth-arrest process and to growth by propagating {110} interface, which (as well as {111} interface) do not appear in traditional crystallographic theory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Understanding the Origin of the Nonpassivating Behavior of Si-Based Anodes during the Initial Cycles

In this contribution, we combined electrochemical cycling and X-ray photoelectron spectroscopy (XPS) to understand the nonpassivating behavior of the solid electrolyte interphase (SEI) on Si anodes during the first cycles. Based on galvanostatic measurements, we show that the irreversible capacity loss is reduced after the first cycle, and it stays almost constant from the second cycle onwards. XPS was used to determine the root causes of the Coulombic inefficiency, showing that the rate of decomposition of the organic solvents strongly decreased after the first cycle, whereas the rate of salt decomposition is almost unchanged between cycles. We determine that the inhibition of the decomposition reaction of the organic solvent is responsible for the lower Coulombic loss during the second electrochemical cycle in comparison to the first, whereas the nonpassivating behavior toward the salt decomposition is one of the main causes of capacity loss upon cycling. Here, we further revisit the role of cracking in contributing to capacity loss. Whereas high volumetric expansion remains an issue plaguing the performance of Si anodes, our chronoamperometry studies reveal that the SEI formed on Si anodes does not passivate even when the electrode is fully expanded, and no additional surface is exposed. Overall, our work establishes the need to address the chemical and electrochemical instability of the SEI on the Si anode in addition to the more notorious issue of cracking.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Pulsed Laser Annealed Ga Hyperdoped Poly‐Si / SiO x Passivating Contacts for High‐Efficiency Monocrystalline Si Solar Cells

Polycrystalline Si ( poly ‐Si)‐based passivating contacts are promising candidates for high‐efficiency crystalline Si solar cells. We show that nanosecond‐scale pulsed laser melting (PLM) is an industrially viable technique to fabricate such contacts with precisely controlled dopant concentration profiles that exceed the solid solubility limit. We demonstrate that conventionally doped, hole‐selective poly ‐Si/SiO x contacts that provide poor surface passivation of c ‐Si can be replaced with Ga‐ or B‐doped contacts based on non‐equilibrium doping. We overcome the solid solubility limit for both dopants in poly ‐Si by rapid cooling and recrystallization over a timescale of ∼25 ns. We show an active Ga dopant concentration of ∼3 × 10 20 cm −3 in poly ‐Si which is six times higher than its solubility limit in c ‐Si, and a B dopant concentration as high as ∼10 21 cm −3 . We measure an implied open‐circuit voltage of 735 mV for Ga‐doped poly ‐Si/SiO x contacts on Czochralski Si with a low contact resistivity of 35.5 ± 2.4 mΩ cm 2 . Scanning spreading resistance microscopy and Kelvin probe force microscopy show large diffusion and drift current in the p ‐ n junction that contributes to the low contact resistivity. Our results suggest that PLM can be extended for hyperdoping of other semiconductors with low solubility atoms to enable high‐efficiency devices.

14 SOLAR ENERGY↗
DOE OSTI2022

A New Recycled Al–Si–Mg Alloy for Sustainable Structural Die Casting Applications

The use of secondary aluminum for structural components in the automotive industry is limited by the high Fe contents in recycled alloys which often result in the formation of brittle β-Al 5 FeSi phase which reduces the ductility of aluminum castings. In this study, a new secondary Al-Si-Mg alloy with high Fe content (about 0.44 wt.%) was developed for die casting applications. Based on thermodynamic modeling, manganese was added to obtain a designed Fe-to-Mn ratio of 2 which successfully suppressed the formation of β-Al 5 FeSi phase, by forming α-Al 15 (Fe,Mn) 3 Si 2 phase with rounded or hexagonal morphology. Additionally, a fine needle-like π-Al 8 FeMg 3 Si 2 phase was also formed within the eutectic regions. The new recycled alloy showed comparable mechanical properties in as-cast and heat treated (T5 and T6) conditions to three major primary die cast alloys (≤ 0.2 wt.% Fe) with similar composition. Ductility up to 7.4% from tensile elongation was achieved in as-cast recycled alloy due to the modification and refinement of α-Al 15 (Fe,Mn) 3 Si 2 by Mn and Sr additions. Tensile elongation was further improved to 9.1% after T6 treatment as a result of dissolution of π-Al 8 FeMg 3 Si 2 phase, defragmentation of α-Al 15 (Fe,Mn) 3 Si 2 and the spheroidization of Si phase. This new alloy provides a promising path for increasing usage of recycled aluminum with high Fe content in structural die castings for automotive and other applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Restored Passivation after Complete Removal of Front Poly-Si Between the Grid in Poly-Si/SiO2 Front/Back Cells

This work explores the use of wet chemical etching to completely remove the front poly-Si layer between grid lines of a front/back poly-Si/SiO2 passivated contact device. The purpose of the work is to provide excellent passivation under the metal grid, but to also maximize Jsc by eliminating optical absorption in the front poly-Si. We show that after a high temperature anneal to distribute carriers in the poly-Si/SiO2/c-Si interface all of the poly-Si can be removed selectively with TMAH, using the SiO2 as an etch-stop layer. The etched surface can be repassivated back to its original level with the addition of a SiNx/Al2O3 stack grown on the preserved tunnelling oxide layer followed by a short forming gas anneal. Using symmetric 100 - 200 nm intrinsically doped poly-Si/SiO2 on textured n-type wafer templates we show absolute device efficiency enhancement from 15% to 21% by increasing the Jsc by 12 mA/cm2 after removing the front poly-Si and repassivating while effectively preserving the Voc, and FF of the device. IQE values are similar to PERC devices in the short wavelength range.

etching↗
DOE OSTI2022

A new mechanism of stabilizing SEI of Si anode driven by crosstalk behavior and its potential for developing high performance Si-based batteries

Stabilizing solid electrolyte interphase (SEI) is a key factor for determining cell performance of Silicon (Si) anode, such as safety, cycle lifetime, and calendar lifetime. Here, we found a new potential for stabilizing SEI of the Si anode, driven by crosstalk with cathode material. Here we investigated the effect of crosstalk on the chemistry of SEI of the Si anode as a function of three different, representative cathode materials: LiNi 0.5 Mn 0.3 Co 0.2 O 2 (NMC532), LiNi 0.8 Mn 0.1 Co 0.1 O 2 (NMC811), and LiFePO 4 (LFP). Specifically, we observed that crosstalk significantly affected the formation and growth mechanism of SEI layer on the Si anodes. Unexpectedly, dissolved Fe ions from the LFP cathode has a positive impact on the chemistry and electrochemical stability of the SEI layer of Si anode compared to the other cathodes, resulting in better electrochemical performance in terms of initial coulombic efficiency and capacity fade.

25 ENERGY STORAGE↗
NASA NTRS1990

Columnar growth of CoSi2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy

Codeposition of silicon and cobalt on heated silicon substrates in ratios several times the silicide stoichiometry is found to result in epitaxial columns of CoSi2 surrounded by a matrix of epitaxial silicon. For (111)-oriented wafers, nearly cylindrical columns are formed, where both columns and surrounding silicon are defect free, as deduced from transmission electron microscopy. Independent control of the column diameter and separation is possible, and diameters of 27-135 nm have been demonstrated.

Fathauer, R. W.↗
DOE OSTI2021

Local Resistance Measurement for Degradation of c-Si Heterojunction with Intrinsic Thin Layer (HIT) Solar Modules

Silicon heterojunction with intrinsic thin layer (or HIT) modules typically degrade at a rate of less than 1% annually in solar fields with dominant degradation in open-circuit voltage and some degradation in series resistance. However, detailed mechanisms can differ from module to module. Here, we study increases in local series resistance that occur over long-term field deployment, indicated by cell areas where the photoluminescence intensity does not degrade but the electroluminescence degrades significantly. To directly measure the local series resistance, we have cored out the local electroluminescence-degraded area, and we measured the sheet resistance by 4-point-probe and local nm-scale resistance using scanning spreading resistance microscopy (SSRM). The results by 4-point-probe show scattered sheet resistance that can be caused, for example, by nonuniform current paths through the transparent conductive oxide layer, the a-Si:H emitter, or the near-junction c-Si inversion layer. In contrast, the SSRM results indicate a relatively uniform and non-degraded resistivity on smaller nanometer spatial scales. SSRM is an atomic force microscopy-based two-terminal resistance mapping technique that measures the local resistance in nm-volume beneath the probe. The consistent resistances measured on the control and degraded samples can exclude the degradation of transparent conductive oxide resistance.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2022

High-resolution laser-induced fluorescence spectroscopy of 28 Si 16 O + and 29 Si 16 O + in a cryogenic buffer-gas cell

Here, the electronic, laser-induced fluorescence spectrum of the B 2 Σ + ← X 2 Σ + transition in 28 Si 16 O + and 29 Si 16 O + has been recorded in a cryogenic buffer gas cell at K. Molecular constants are extracted for both 28 Si 16 O + and 29 Si 16 O + , including the Fermi contact hyperfine constant for both the B and X states of 29 Si 16 O + , and used in a discussion of the suitability of SiO in future quantum information experiments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Quantifying the Reactivity of Isolated Li x Si Domains in Si Anodes Using Operando NMR

The use of Si anodes can greatly improve the energy density of Li-ion batteries. However, understanding and mitigation of calendar aging remains a barrier to commercialization. Here, in this short report, we utilize operando Nuclear Magnetic Resonance (NMR) spectroscopy to detect and quantify lithium silicides (Li x Si) as they form and react within Si anodes in pouch cells during calendar aging. We provide direct experimental evidence of complex aging phenomena in the Si anodes, including both SEI growth and dissolution during storage. Formation of electrochemically isolated Li x Si is also observed, as indicated by the partial persistence of highly lithiated phases after the cell is discharged. Remarkably, we show that these isolated domains can themselves self-discharge over time, suggesting that their detection can be challenging in post-mortem studies. Finally, we show that aging outcomes depend heavily on the type of silicon particles contained within the electrode, and that certain surface coatings can help decrease the reactivity between lithium silicides and the electrolyte.

Li-ion battery↗
DOE OSTI2025

Precise Synthesis of Complex Si–Si Molecular Frameworks

In this Perspective, we highlight the emergence of target-oriented syntheses of complex molecules composed of Si–Si (oligosilanes) rather than C–C bonds. Saturated oligosilanes structurally resemble alkanes with respect to a tetrahedral geometry, a preference for a staggered conformation in linear chains, the ability to form stable small rings, and tetrahedral stereochemistry at asymmetrically functionalized Si centers. There are also critical differences, for example, differences in multiple bonding and the ability to form penta- and hexacoordinated structures, that mean that chemical reactivity and, in particular, rules for stereoselective synthesis do not cleanly translate from carbon to silicon. This Perspective will discuss recent achievements in the precise, controlled synthesis of complex molecules comprised mainly of Si–Si bonds and highlight the mechanistic insights enabling increased molecular complexity. New tools, such as electrochemical and catalytic reactions, will be discussed as well as the problem of controlling relative configuration in molecules containing multiple stereogenic-at-silicon centers. Furthermore, these synthetic achievements facilitate the discovery of new properties, including insight into light absorption, conformation, and mechanical properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Experimental study of the Si 30 ( He 3 , d ) P 31 reaction and thermonuclear reaction rate of Si 30 ( p , γ ) P 31

Background: Abundance anomalies in some globular clusters, such as the enhancement of potassium and the depletion of magnesium, can be explained in terms of an earlier generation of stars polluting the presently observed ones. It was shown that the potential range of temperatures and densities of the polluting sites depends on the strength of a few critical reaction rates. The 30 Si(p,γ) 31 P reaction has been identified as one of these important reactions. Purpose: The key ingredient for evaluating the thermonuclear 30 Si(p,γ) 31 P reaction rate is the strength of the resonances which, at low energy, are proportional to their proton width. Therefore, the goal of this work is to determine the proton widths of unbound 31 P states. Method: States in 31 P were studied at the Maier-Leibnitz-Laboratorium using the one-proton 30 Si( 3 He,d) 31 P transfer reaction. Deuterons were detected with the high resolution one quadrupole three dipoles (Q3D) magnetic spectrometer. Angular distribution and spectroscopic factors were extracted for 27 states, and proton widths and resonance strengths were calculated for the unbound states. Results: Several 31 P unbound states have been observed for the first time in a one-proton transfer reaction. Above 20 MK, the 30 Si(p,γ) 31 P reaction rate is now entirely estimated from the observed properties of 31 P states. The reaction rate uncertainty from all resonances other than the E$^{c.m.}_{r}$ = 149 keV resonance has been reduced down to less than a factor of 2 above that temperature. The unknown spin and parity of the E$^{c.m.}_{r}$ = 149 keV resonance dominates the uncertainty in the rate in the relevant temperature range. Conclusion: Here, the remaining source of uncertainty on the 30 Si(p,γ) 31 P reaction rate comes from the unknown spin and parity of the E$^{c.m.}_{r}$ = 149 keV resonance which can change the reaction rate by a factor of 10 in the temperature range of interest.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Effects of Al:Si and (Al+Na):Si ratios on the static corrosion of sodium‐boroaluminosilicate glasses

Abstract Understanding alteration mechanisms of borosilicate glasses in aqueous media is essential to nuclear waste performance assessments to ensure radioisotopes are contained for extended durations. Aluminum is typically added to glass compositions to reduce the extent of alteration. However, previous work on 7‐day durability tests has suggested that Al has a nonlinear relationship with extent of alteration. The effects of Al:Si and (Al+Na):Si substitutions on glass durability were evaluated using series of glasses based on the International Simple Glass corroded in static conditions up to 13 months in deionized water at 90°C. The alteration behavior was determined by measurement of element release in solution. The ⁓7‐day alteration trends across the series were consistent with predicted trends. The 13‐month results indicated overall alteration decreased as Al:Si ratios increased and was unaffected by changes in (Al+Na):Si except for the glass with the highest (Al+Na):Si ratio (ISG‐A23N), which completely altered within 14 days. Frequent sampling and in situ Raman measurements of solutions revealed ISG‐A23N experienced several distinguishable alteration rate regimes within 7 days, forming a ⁓100 µm alteration layer and a NaSiAlO 4 zeolite.

Reiser, Joelle T.↗