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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Clearance of short circuited ion optics electrodes by capacitive discharge

The ion optics electrodes of low specific impulse (3000 sec) mercury electron bombardment ion thrusters are vulnerable to short circuits by virtue of their relatively small interelectrode spacing (0.5 mm). Metallic flakes from backsputtered deposits are the most probable cause of such 'shorts' and 'typical' flakes have been simulated here using refractory wire that has a representative, but controllable, cross section. Shorting wires can be removed by capacitive discharge without significant damage to the electrodes. This paper describes an evaluation of 'short' removal versus electrode damage for several combinations of capacitor voltage, stored energy, and short circuit conditions.

Poeschel, R. L.↗
NASA NTRS1973

Design and flight performance evaluation of the Mariners 6, 7, and 9 short-circuit current, open-circuit voltage transducers

The purpose of the short-circuit voltage transducer is to provide engineering data to aid the evaluation of array performance during flight. The design, fabrication, calibration, and in-flight performance of the transducers onboard the Mariner 6, 7 and 9 spacecrafts are described. No significant differences were observed in the in-flight electrical performance of the three transducers. The transducers did experience significant losses due to coverslides or adhesive darkening, increased surface reflection, or spectral shifts within coverslide assembly. Mariner 6, 7 and 9 transducers showed non-cell current degradations of 3-1/2%, 3%, and 4%, respectively at Mars encounter and 6%, 3%, and 4-12%, respectively at end of mission. Mariner 9 solar Array Test 2 showed 3-12% current degradation while the transducer showed 4-12% degradation.

Patterson, R. E.↗
NASA NTRS1992

Development of internal/external short circuit protection for lithium D cells

A brief discussion of short circuit protection for lithium D cells is given in viewgraph format. The following topics are presented: (1) historical need; (2) program objectives; (3) composite thermal switch (CTS) development; (4) laboratory cells with CTS; and (5) the incorporation of CTS into lithium D cells.

Mcdonald, Robert C.↗
NASA NTRS1991

Control of internal and external short circuits in lithium batteries using a composite thermal switch

A composite material has been developed, consisting of a blend of metal and fluorocarbon particles, which behaves as an electronic conductor at room temperature and which abruptly becomes an insulator at a predetermined temperature. This switching behavior results from the difference in thermal expansion coefficients between the conductive and non-conductive portions of the composite. This material was applied as a thin film between the carbon cathode in Li/SOCl2 cells, and the metallic cathode current collector. Using test articles incorporating this feature it was shown that lithium cells externally heated or internally heated during a short circuit lost rate capability and the ability to overheat well below the melting point of lithium (180 C). Thus, during an internal or external cell short circuit, the potential for thermal runaway involving reactions of molten lithium is avoided.

Mcdonald, Robert C.↗
NASA NTRS1976

Errors in short circuit measurements due to spectral mismatch between sunlight and solar simulators

Errors in short circuit current measurement were calculated for a variety of spectral mismatch conditions. The differences in spectral irradiance between terrestrial sunlight and three types of solar simulator were studied, as well as the differences in spectral response between three types of reference solar cells and various test cells. The simulators considered were a short arc xenon lamp AMO sunlight simulator, an ordinary quartz halogen lamp, and an ELH-type quartz halogen lamp. Three types of solar cells studied were a silicon cell, a cadmium sulfide cell and a gallium arsenide cell.

Curtis, H. B.↗
NASA NTRS1978

Apparatus including a plurality of spaced transformers for locating short circuits in cables

A cable fault locator is described for sensing faults such as short circuits in power cables. The apparatus includes a plurality of current transformers strategically located along a cable. Trigger circuits are connected to each of the current transformers for placing a resistor in series with a resistive element responsive to an abnormally high current flowing through that portion of the cable. By measuring the voltage drop across the resistive element, the location of the fault can be determined.

Cason, R. L.↗
NASA NTRS2014

On-Demand Cell Internal Short Circuit Device

A device implantable in Li-ion cells that can generate a hard internal short circuit on-demand by exposing the cell to 60C has been demonstrated to be valuable for expanding our understanding of cell responses. The device provides a negligible impact to cell performance and enables the instigation of the 4 general categories of cell internal shorts to determine relative severity and cell design susceptibility. Tests with a 18650 cell design indicates that the anode active material short to the aluminum cathode current collector tends to be more catastrophic than the 3 other types of internal shorts. Advanced safety features (such as shutdown separators) to prevent or mitigate the severity of cell internal shorts can be verified with this device. The hard short success rate achieved to date in 18650 cells is about 80%, which is sufficient for using these cells in battery assemblies for field-failure-relevant, cell-cell thermal runaway propagation verification tests

Darcy, Eric↗
NASA NTRS1987

Variations in the electrical short-circuit current decay for recombination lifetime and velocity measurements

An improved measurement system for electrical short-circuit current decay is presented that extends applicability of the method to silicon solar cells having an effective lifetime as low as 1 microsec. The system uses metal/oxide/semiconductor transistors as voltage-controlled switches. Advances in theory developed here increase precision and sensitivity in the determination of the minority-carrier recombination lifetime and recombination velocity. A variation of the method, which exploits measurements made on related back-surface field and back-ohmic contact devices, further improves precision and sensitivity. The improvements are illustrated by application to 15 different silicon solar cells.

Jung, Tae-Won↗
NASA NTRS2009

An Empirical Model for Estimating the Probability of Electrical Short Circuits from Tin Whiskers

In this experiment, an empirical model to quantify the probability of occurrence of an electrical short circuit from tin whiskers as a function of voltage was developed. This empirical model can be used to improve existing risk simulation models. FIB and TEM images of a tin whisker confirm the rare polycrystalline structure on one of the three whiskers studied. FIB cross-section of the card guides verified that the tin finish was bright tin.

Courey, Karim↗
NASA NTRS2008

An Investigation of the Electrical Short Circuit Characteristics of Tin Whiskers

In this experiment, an empirical model to quantify the probability of occurrence of an electrical short circuit from tin whiskers as a function of voltage was developed. This model can be used to improve existing risk simulation models FIB and TEM images of a tin whisker confirm the rare polycrystalline structure on one of the three whiskers studied. FIB cross-section of the card guides verified that the tin finish was bright tin.

Courey, Karim J.↗
NASA NTRS1987

Calculations of the displacement damage and short-circuit current degradation in proton irradiated (AlGa)As-GaAs solar cells

A theoretical model for computing the displacement damage defect density and the short-circuit current (I sub sc) degradation in proton-irradiated (AlGa)As-GaAs p-n junction solar cells is presented. Assumptions were made with justification that the radiation induced displacement defects form an effective recombination center which controls the electron and hole lifetimes in the junction space charge region and in the n-GaAs active layer of the irradiated GaAs p-n junction cells. The degradation of I sub sc in the (AlGa)As layer was found to be negligible compared to the total degradation. In order to determine the I sub sc degradation, the displacement defect density, path length, range, reduced energy after penetrating a distance x, and the average number of displacements formed by one proton scattering event were first calculated. The I sub sc degradation was calculated by using the electron capture cross section in the p-diffused layer and the hole capture cross section in the n-base layer as well as the wavelength dependent absorption coefficients. Excellent agreement was found between the researchers calculated values and the measured I sub sc in the proton irradiated GaAs solar cells for proton energies of 100 KeV to 10 MeV and fluences from 10 to the 10th power p/square cm to 10 to the 12th power p/square cm.

Yeh, C. S.↗
NASA NTRS1980

Short-circuit current improvement in thin cells with a gridded back contact

The use of gridded back contact on thin silicon solar cells 50 micrometers was investigated. An unexpected increase in short circuit current of almost 10 percent was experienced for 2 cm x 2 cm cells. Control cells with the standard continuous contact metallization were fabricated at the same time as the gridded back cells with all processes identical up to the formation of the back contact. The gridded back contact pattern was delineated by evaporation of Ti-Pd over a photo-resist mask applied to the back of the wafer; the Ti-Pd film on the controls was applied in the standard fashion in a continuous layer over the back of the cell. The Ti-Pd contacts were similarly applied to the front of the wafer, and the grid pattern on both sides of the cell was electroplated with 8-10 micrometers of silver.

Giuliano, M.↗
NASA NTRS1978

Short circuit current changes in electron irradiated GaAlAs/GaAs solar cells

Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.

Walker, G. H.↗