SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Reliability analysis of the transistor JANTX2N4150 manufactured by General Semiconductor and Transitron is reported. The discrete devices were subjected to power and temperature step stress tests and then to electrical tests after completing the power/temperature step stress point. Control sample units were maintained for verification of the electrical parametric testing. Results are presented.
Fast scanning IR microscope for semiconductor evaluation used for engineering design analysis, reliability improvement, failure analysis, etc
In 1991, the Cassini Project, NASA's planetary project to place a spacecraft in orbit about Saturn, funded a study at the Jet Propulsion Laboratory (JPL) to identify rules for design and test of hardware required to function reliably in space for very long lifetimes. Twenty-nine subjects were considered comprising 130 specific rules related to long-life issues such as accelerated life testing, cycling of mechanical devices, selection and application of parts, semiconductor junction temperatures, and worst-case analysis for long life. The study was subsequently published as a JPL document. One major conclusion of the workshop was that unattended space missions extending out to 25 years or more are feasible.
Suitability of plastic-encapsulated solid-state electronic devices for use in spacecraft discussed. Conclusion of preliminary study was plasticencapsulated parts sufficiently reliable to be considered for use in lowcost equipment used at moderate temperature and low humidity. Useful to engineers as guides to testing or use of plastic encapsulated semiconductors in severe terrestrial environments.
A relatively new type of signal isolation based on Giant Magnetoresistive (GMR) technology was investigated for potential use in harsh temperature environments. Operational characteristics of the 2Mbps single channel, IL510-Series commercial-off-the-shelf (COTS) digital isolator chip was obtained under extreme temperature exposure and thermal cycling in the range of -190 C to +120 C. The isolator was evaluated in terms of its output signal delivery and stability, output rise (t(sub r)) and fall times (t(sub f)), and propagation delays at 50% level between input and output during low to high (t(sub PLH)) and high to low (t(sub PHL)) transitions. The device performed very well throughout the entire test temperature range as no significant changes occurred either in its function or in its output signal timing characteristics. The limited thermal cycling, which comprised of 12 cycles between -190 C and +120 C, also had no influence on its performance. In addition, the device packaging underwent no structural damage due to the extreme temperature exposure. These preliminary results indicate that this semiconductor chip has the potential for use in a temperature range that extends beyond its specified regime. Additional and more comprehensive testing, however, is required to establish its operation and reliability and to determine its suitability for long-term use in space exploration missions.
A photograph and a block diagram of the high-temperature probe station are shown. The system consists of the ceramic heater mounted on a NASA shuttle tile insulator, a direct current power supply, a personal-computer-based data acquisition and temperature controller, microwave probes, a microscope, and a network analyzer. The ability to perform microwave tests at high temperatures is becoming necessary. There is now a need for sensors and communication circuits that can operate at 500 C and above for aircraft engine development and monitoring during flight. To address this need, researchers have fabricated devices using wide bandgap semiconductors such as SiC with targeted operating temperatures of 500 to 600 C. However, the microwave properties of these devices often change drastically with temperature, so any designs that are intended to be used in such an environment must be characterized at high temperatures. For some reliability, lifetime, and direct-current testing, the device under test can be packaged and characterized in an oven. However, for RF and microwave measurements, it is usually not possible to establish a calibrated reference plane at the device terminals within a package. In addition, the characteristics of the package would vary over a 500 C temperature range, and this would have to be accounted for when the data were analyzed. A high temperature probe station allows circuits and devices to be characterized through on wafer measurements across a broad temperature range with known reference plane. The conventional, commercially available thermal wafer-probe stations that are used to evaluate microwave devices across a controlled temperature range have a typical upper limit of 200 C. Standalone thermal heating chucks are available with an extended upper temperature range of 300 to 400 C. To effectively characterize devices at temperatures up to and surpassing 500 C, Glenn researchers developed a custom probe station. In the past, custom probe stations have been developed to test devices under other extreme environments, such as cryogenic temperatures as low as 37 K. Similarly, this custom probe station was specifically modified for high-temperature use. It allows devices to be measured quickly and flexibly, without the use of wire bonds and test fixtures. The probe station is shown making scattering parameter measurements from 1 to 50 GHz with a Hewlett-Packard 8510C Network Analyzer. There is a half-wafer of silicon directly on top of the heater to provide a uniform heated platform for our sample. A quarter wafer of silicon carbide forms the substrate for our test circuit of several transmission lines.
We present a methodology to calculate radiative carrier capture coefficients at deep defects in semiconductors and insulators from first principles. Electronic structure and lattice relaxations are accurately described with hybrid density functional theory. Calculations of capture coefficients provide an additional validation of the accuracy of these functionals in dealing with localized defect states. We also discuss the validity of the Condon approximation, showing that even in the event of large lattice relaxations the approximation is accurate. We test the method on GaAs:VGa-TeAs and GaN:CN, for which reliable experiments are available, and demonstrate very good agreement with measured capture coefficients.
This Perspective builds upon insights from the National Institute of Standards and Technology (NIST)-organized workshop, “Materials and Metrology Needs for Advanced Semiconductor Packaging Strategies,” held at the 35th annual Electronics Packaging Symposium in Binghamton, NY, on September 5, 2024. It outlines critical challenges and opportunities related to polymer-based “soft” materials in advanced semiconductor packaging, with emphasis on polymer science, measurement science (metrology), and the strategic development of Research-Grade Test Materials (RGTMs). These efforts, led by the NIST CHIPS team, aim to advance the fundamental understanding of structure-property-processing relationships, promote standardized guidelines and innovative methods for material characterization, and accelerate the development, qualification, and adoption of next-generation packaging materials. The Perspective also distills key insights from the panel discussion with industry experts, emphasizing the need for close collaboration among materials scientists, process engineers, and metrology experts to enable a holistic strategy, further highlighting the importance of cross-sector partnerships among industry, academia, and government to address pressing challenges in packaging materials and processes.
In 2007, International Rectifier (IR) introduced a new version of its DirectFET metal oxide semiconductor field effect transistor (MOSFET) packaging. The new version (referred to as 'Version 2') enhances device moisture resistance, makes surface mount (SMT) assembly of these devices to printed wiring boards (PWBs) more repeatable, and subsequent assembly inspection simpler. In the present study, the National Aeronautics Space Administration (NASA) Jet Propulsion Laboratory (JPL), in collaboration with Stellar Microelectronics (Stellar), continued an evaluation of the DirectFET that they started together in 2006. The present study focused on comparing the two versions of the DirectFET and examining the suitability of the DirectFET devices for space applications. This study evaluated both versions of two DirectFET packaged devices that had both been shown in the 2006 study to have the best electrical and thermal properties: the IRF6635 and IRF6644. The present study evaluated (1) the relative electrical and thermal performance of both versions of each device, (2) the performance through high reliability testing, and (3) the performance of these devices in combination with a range of alternate solder alloys in the extreme thermal environments of deep space....
This project is intended to support the development of new traction drive systems that meet the targets of 100 kW/L for power electronics and 50 kW/L for electric machines with reliable operation to 300,000 miles. To meet these goals, new designs must be identified that make use of state-of-the-art and next-generation electronic materials and design methods. Designs must exploit synergies between components, for example converters designed for high-frequency switching using wide band gap (WBG) devices and ceramic capacitors. This project included: (1) a survey of available technologies; (2) investigating new technologies, that for example, reduce volume of thermal management or magnetic components; (3) the development of computer aided design tools that consider the converter volume, reliability, and electrical performance; (4) exercising the design software to evaluate performance gaps and predict the impact of certain technologies and design approaches, i.e. GaN semiconductors, ceramic capacitors, ceramic thermal management components, and select topologies; (5) building and testing hardware prototypes to validate models and concepts. The design tools enable co-optimization of the power module and passive elements and provide some design guidance. At the end of the project, new advanced computing methods, such as machine learning approaches, were considered.
Oxide-passivated semiconductor chip is given protective glass coating by means of vapor deposition over metallic substrate of integrated circuit (IC). Method provides more reliable oxide-passivation and hermetic sealing in current use. Chips and scratches incurred during dicing, testing, and assembly are markedly reduced.
The utility of X-rays as a stimulus for screening high reliability semiconductor microcircuits was studied. The theory of the interaction of X-rays with semiconductor materials and devices was considered. Experimental measurements of photovoltages, photocurrents, and effects on specified parameters were made on discrete devices and on microcircuits. The test specimens included discrete devices with certain types of identified flaws and symptoms of flaws, and microcircuits exhibiting deviant electrical behavior. With a necessarily limited sample of test specimens, no useful correlation could be found between the X-ray-induced electrical response and the known or suspected presence of flaws.
Characterizing the structural and chemical transitions of muscovite mica across various scales and thermal profiles is essential for ensuring the reliability of high-voltage power insulation, aerospace thermal barriers, and nanoscale semiconductor substrates under extreme operational stress. Here, we investigate notch fracture toughness $K^{n}_{Ic}$ of muscovite mica as a function of feature size w and temperature T with microscale shear testing. $K^{n}_{Ic}$ decreased and then stayed constant as w increased, likely from fabrication-induced changes to the microstructure and roughness. Moreover, $K^{n}_{Ic}$ initially decreased and then increased as temperature T increased, with the reversal in trend indicative of a brittle-to-ductile transition. Complementary Raman spectroscopy and molecular dynamics showed that the observed trends were due to an increase in bond lengths and a decrease in critical stresses/strains. In comparing the microscale results to macroscale counterparts, it was surmised that the decrease in brittle-to-ductile transition temperature was due to an increase in the dehydroxylation rate.
Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers devote significant empirical efforts to study these phenomena and to improve semiconductor device stability. Still, understanding the underlying reasons of these instabilities remains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most commonly alleged causes of metastability in CdTe devices, such as ‘migration of Cu’, have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses suggesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. We believe it should be noted that atomic impurity profiles in CdTe provide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic defects; for example, changing the state of an impurity from an interstitial donor to a substitutional acceptor often is accompanied by generation of a compensating intrinsic interstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of temporal changes in device performance even more challenging and a closed solution that can treat the entire system and its interactions is required.
Research is being conducted to accelerate the acceptance of advanced technologies by the airframe manufacturers. These technologies will make the aircraft of the 1990-2000 period more efficient and less expensive to operate. The implementation of advanced control functions requires the employment of suitable onboard flight electronics systems. The present investigation is concerned with a concept for reliable onboard data distribution which is focused around the use of fiber optic wavelength division multiplexing (WDM). Attention is given to aircraft control and data distribution, the wavelength division multiplexing data bus, semiconductor lasers and optical transmitters, an optical coupler-multiplexer, and optical demultiplexers. Results of tests on the prototype WDM systems indicate that the WDM concept can be engineered into a successful system with currently available components.
Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all of the sensitive regions of the studied device with fine resolution, unlike heavy ion experiments. The problematic regions can be precisely identified, and it provides a considerable amount of information about the circuit. In addition, the system allows flexibility for testing the device in different configurations in situ.
Ab initio quantum-chemical methods that perform well for computing the electronic ground state are not straightforwardly transferable to electronically excited states, particularly in large molecular systems. Wave function theory offers high accuracy, but is often prohibitively expensive. Methods based on time-dependent density functional theory (TD-DFT) are crucially sensitive to the chosen exchange-correlation functional (XCF) parameterization, and system-specific tuning protocols were therefore proposed to address the method's robustness. Methods based on the variational relaxation of the excited-state electron density showcased promising results for the calculation of charge-transfer excitations, but the complex shape of the electronic hypersurface makes convergence to a specific excited state much more difficult than for the ground state when standard variational techniques are applied. We address the latter aspect by providing suitable initial guesses, which we obtain by two separate constrained algorithms. Combined with the squared-gradient minimization algorithm for all-electrons relaxation in a freeze-and-release scheme (FRZ-SGM), we demonstrate that orbital-optimized density functional theory (OO-DFT) calculations can reliably converge to the charge-transfer states of interest even for large molecular systems. We test the FRZ-SGM method on a phenothiazine-anthraquinone CT excitation in a supramolecular Pd(II) coordination cage complex as a function of the cage conformation. This compound has been studied experimentally prior to our work. We compare this freeze-and-release scheme to two XCF reparameterizations, which were recently proposed as low-cost TD-DFT-based alternatives to variational methods. Two dye-semiconductor complexes, which were previously investigated in the context of photovoltaic applications, serve as a second example to investigate the convergence and stability of the FRZ-SGM approach. Our results demonstrate that FRZ-SGM provides reliable convergence for charge-transfer excited states and avoids variational collapse to lower-lying electronic states, whereas time-dependent DFT calculations with an adequate tuning procedure for the range-separation parameter provide a computationally efficient initial estimate of the corresponding energies, with a computational cost comparable to that of configuration-interaction singles (CIS) calculations.
Robotic systems are increasingly used for inspection, maintenance, and disaster assistance for nuclear power plants. These robots utilize increasingly high levels of autonomy to operate in environments that are unsafe for humans to operate the robot in or require more precise control over the robot than a human can offer. In these cases, the robot must include perception and computation components to autonomously sense and navigate through the environment to fulfill its mission. This difficult task is complicated by radiation interfering with sensors' operation. The impact of this interference is largely unexplored, as existing works on radiation interference on sensors focus on estimating the incident radiation, rather than how it impacts a robotic system using the sensor. In this work, we seek to quantify and describe the impact of radiation on cameras, and how the radiation affects robotic performance. In this paper we study cameras that are suitable for small, lightweight unmanned aerial vehicles (UAVs) that are increasingly deployed to fly in confined areas in emergencies, where the surrounding environment is unsafe for workers to operate. These small UAVs lack the payload capacity to carry significant radiation shielding, so any onboard sensors will be affected by radiation. In the case of cameras, this radiation appears as noise in the camera imagery. This noise will interfere with the UAV's operation, by obscuring obstacles and interfering with localization and optical flow algorithms that detect detailed features in the environment. To date, there is a lack of information on how the radiation noise in the camera image impacts the overall robot system performance Existing work focuses on estimating the amount of incident radiation by measuring the corruption in the images. However, these works suffer several shortcomings for robotic systems. First, a robot must be able to successfully navigate its environment during a successful mission, and merely quantifying the amount of radiation noise in an image does not adequately explain how it may interfere with higher level navigation and perception tasks. Second, radiation estimation procedures rely on focusing the camera on a known and static background. This is unsuitable for robotic exploration tasks, where the robot frequently moves around an unknown environment that may be dynamically changing. Our work contains two contributions that address these shortcomings. First, we conduct a detailed analysis of the noise radiation causes in cameras by exposing cameras that are commonly used on UAVs [e.g., small form factor complementary metal-oxide-semiconductor (CMOS) cameras] to varying levels of radiation that may be present in emergency scenarios. From this exposure, we quantify not only how much noise is present, but quantify its appearance. By quantifying the appearance and amount of noise in a camera image, researchers can design mitigation strategies for the corruption, so that their robotic systems can operate in these challenging environments. Second, we demonstrate how to leverage this experimental data in robotic simulations. Using data from the first set of experiments allows us to test and verify the robots in simulation. Using simulators allows us to verify the robots will perform as expected during critical times without needing expensive test equipment or damaging valuable robot prototypes. Other researchers using robots for exploration of irradiated environments will benefit from our research by incorporating similar noise models in their research. 1 Southwest Research Institute{sup R} is a registered trademark of Southwest Research Institute in the United States and/or other countries. This will increase the reliability of robotic systems prior to deployment in emergency situations, which will in turn increase their effectiveness and speed the development of robots that would otherwise need expensive and time-consuming test procedures to validate. (authors)