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Nuclear Science Symposium, 20th, and Nuclear Power Systems Symposium, 5th, San Francisco, Calif., November 14-16, 1973, Proceedings

Subjects considered are in the areas of position sensitive detectors, semiconductor detector materials, semiconductor detector technology, biomedical instrumentation, reactor instrumentation, nuclear instrumentation, and data acquisition and processing. Topics related to photon detection are discussed together with methods for environmental radiation measurement, aspects of environmental gamma-ray analysis, and nuclear techniques for elemental analysis. Attention is also given to operation and design experience with systems at nuclear power plants. Individual items are announced in this issue.

Source record↗

Nuclear Science Symposium, 23rd, Scintillation and Semiconductor Counter Symposium, 15th, and Nuclear Power Systems Symposium, 8th, New Orleans, La., October 20-22, 1976, Proceedings

The volume includes papers on semiconductor radiation detectors of various types, components of radiation detection and dosimetric systems, digital and microprocessor equipment in nuclear industry and science, and a wide variety of applications of nuclear radiation detectors. Semiconductor detectors of X-rays, gamma radiation, heavy ions, neutrons, and other nuclear particles, plastic scintillator arrays, drift chambers, spark wire chambers, and radiation dosimeter systems are reported on. Digital and analog conversion systems, digital data and control systems, microprocessors, and their uses in scientific research and nuclear power plants are discussed. Large-area imaging and biomedical nucleonic instrumentation, nuclear power plant safeguards, reactor instrumentation, nuclear power plant instrumentation, space instrumentation, and environmental instrumentation are dealt with. Individual items are announced in this issue.

Wagner, L. J.↗

Gamma ray detector modules

A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

Capote, M. Albert↗

Semiconductor projectile impact detector

A semiconductor projectile impact detector is described for use in determining micrometeorite presence, as well as its flux and energy comprising a photovoltaic cell which generates a voltage according to the light and heat emitted by the micrometeorites upon impact. A counter and peak amplitude measuring device were used to indicate the number of particules which strike the surface of the cell as well as the kinetic energy of each of the particles.

Shriver, E. L.↗

A Technique for Increasing the Sensitivity of a Solid-State Fission Probe

A small silicon p-n junction wafer, when coated with uranium 235, can be used as a compact fission probe for low power flux and power mapping. Because of the inverse relation between the magnitude of a neutron-induced fission pulse and the inherent capacitance of the detecting element (capacitance is proportional to area), the size, and hence the sensitivity, of the semiconductor detector has been limited. New developments in the field of semiconductor detectors have made it possible to fabricate large area detectors which are essentially free from the capacitance effect. However, preliminary results indicate that they are much more susceptible to radiation damage than the detectors described in this report and as such may not be suitable for flux mapping. increasing the sensitivity cannot be accomplished by simply fabricating a larger detector. It has been observed that by combining the silicon p-n junction wafers in a series configuration the capacitance effect can be bypassed, and a fission probe can be made with a resultant increase in sensitivity by a factor of ten while sustaining only a minor decrease in pulse height. Analysis further indicates that for n silicon wafers in series, if n(C(sub i)) + C(sub c)/C(sub b) less than 0.1 where C(sub i) and C(sub c) are the preamplifier input and cable capacitances, respectively, and C(sub b) is the junction capacitance of a single silicon wafer, there should be no substantial reduction in pulse height due to series circuitry.

Steinberg, Robert↗

New Technology CZT Detectors for High-Energy Flare Spectroscopy: The Room Temperature Semiconductor Spectrometer for JAWSAT

The goal of our Room Temperature Semiconductor Spectrometer (RTeSS) project is to develop a small high-energy solar flare spectrometer employing semiconductor detectors that do not require significant cooling when used as high-energy solar flare spectrometers. Specifically, the goal is to test Cadmium Zinc Telluride (CZT) detectors with coplanar grid electrodes as x-ray and gamma-ray spectrometers and to design an experiment that can be flown as a "piggy-back" payload on a satellite mission during the next solar maximum.

Vestrand, W. Thomas↗

Reflections From Plasma Would Enhance Infrared Detector

Quantum efficiency of proposed photoemission semiconductor detector of long-wavelength infrared radiation enhanced by multiple passes of radiation. Device has features of back-to-back heterojunction internal-photoemission (HIP) detector, and Fabry-Perot interferometer. Arrays of devices of this type incorporated into integrated-circuit infrared imaging devices.

Maserjian, Joseph↗

Development of Transition Edge Sensor Detectors Optimized for Single-Photon Spectroscopy in the Optical and Near-Infrared

The search for biosignatures in the atmospheres of exoplanets will be a key focus of future space telescopes that operate in the ultraviolet, visible, and near-infrared bands. Detection of biosignatures requires an instrument with moderate spectral resolving power ($R \sim 100$) and a large bandwidth ($\sim 400$ nm -- $\sim 1.8$ $\mu$m). Additionally, biosignature detection is a photon-starved science; instruments designed for these measurements would ideally combine high optical efficiency with quantum-limited photon detectors (i.e., detectors that exhibit zero dark current). In this work, we report on our efforts to develop energy resolving transition edge sensor (TES)-based detectors designed for biosignature detection. TESs operated as microcalorimeters are compelling detectors for this application. Unlike semiconductor detectors, TESs eliminate the need for dispersive optics and are truly single photon detectors -- fundamental TES noise yields uncertainty in the energies of detected photons, not in the number of detected photons. We introduce TESs designed for this application and discuss the path toward realizing a TES-based dispersionless spectrometer optimized for biosignature detection.

Instrumentation and Photography↗

Development of Transition Edge Sensor Detectors Optimized for Single-Photon Spectroscopy in the Optical and Near-Infrared

The search for biosignatures in the atmospheres of exoplanets will be a key focus of future space telescopes that operate in the ultraviolet, visible, and near-infrared bands. Detection of biosignatures requires an instrument with moderate spectral resolving power (R ~ 100) and a large bandwidth (~ 400 nm – ~ 1.8 µm). Additionally, biosignature detection is a photon-starved science; instruments designed for these measurements would ideally combine high optical efficiency with quantum-limited photon detectors (i.e., detectors that exhibit zero dark current). In this work, we report on our efforts to develop energy resolving transition edge sensor (TES)-based detectors designed for biosignature detection. TESs operated as microcalorimeters are compelling detectors for this application. Unlike semiconductor detectors, TESs eliminate the need for dispersive optics and are truly single photon detectors – fundamental TES noise yields uncertainty in the energies of detected photons, not in the number of detected photons. We introduce TESs designed for this application and discuss the path toward realizing a TES-based dispersionless spectrometer optimized for biosignature detection.

Instrumentation and Photography↗

Modifications developed to improve x-ray detection devices

Improvements in the development of x-ray detection devices are described. Emphasis is placed on lowering the temperature in order to achieve better x-ray response. A simplified charge integrator schematic is presented along with supporting tables. By using cryogenic operating temperatures, these x-ray detectors may eventually surpass the performance of the best semiconductor detectors.

Source record↗

An experiment to study the nuclear component of primary cosmic rays

An apparatus has been designed and is being fabricated to study the charge composition, fluxes, and energy spectra of light nuclei in the energy region from 1 GeV to 100 GeV. The apparatus essentially consists of an array of a large number of particle detectors operated in coincidence and serving as a charged particle telescope. A mosaic silicon semiconductor detector, a plastic scintillation counter and a lucite Cerenkov detector are used to measure the charges of the incident nuclei. Two one-inch thick CsI detectors are used to study low energy particles. An ionization spectrometer is utilized to measure primary energies in the 1 to 100 GeV energy interval. A gas Cerenkov counter is being designed to distinguish between electrons and protons. It is planned to calibrate the apparatus at an accelerator using particles of known energy.

Paul, J. M.↗

Demonstration of the First 4H-SiC EUV Detector with Large Detection Area

Ultraviolet (UV) and Extreme Ultraviolet (EUV) detectors are very attractive in astronomy, photolithography and biochemical applications. For EUV applications, most of the semiconductor detectors based on PN or PIN structures suffer from the very short penetration depth. Most of the carries are absorbed at the surface and recombined there due to the high surface recombination before reach the depletion region, resulting very low quantum efficiency. On the other hand, for Schottky structures, the active region starts from the surface and carriers generated from the surface can be efficiently collected. 4H-Sic has a bandgap of 3.26eV and is immune to visible light background noise. Also, 4H-Sic detectors usually have very good radiation hardness and very low noise, which is very important for space applications where the signal is very weak. The E W photodiodes presented in this paper are based on Schottky structures. Platinum (Pt) and Nickel (Ni) are selected as the Schottky contact metals, which have the highest electron work functions (5.65eV and 5.15eV, respectively) among all the known metals on 4H-Sic.

Xin, Xiaobin↗