Recrystallization of Cu(In,Ga)Se2 Semiconductor Thin Films via InCl3 Treatment
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Materials Science↗
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Solution-Grown Ternary Semiconductors: Nanostructuring and Stereoelectronic Lone Pair Distortions in I–V–VI 2 Materials
Alkali pnictogen dichalcogenides–I–V–VI 2 or APnCh 2 –have been identified as promising semiconducting materials for energy conversion devices. However, the controlled nanoscale synthesis and our understanding of the effects of cation ordering and stereochemically active lone pairs on the structures of these ternary compounds remain underdeveloped. Here, we use solution-phase chemistry to synthesize a family of APnCh 2 materials, including LiSbSe 2 , NaSbS 2 , NaSbSe 2 , NaBiS 2 , and NaBiSe 2 . Our approach utilizes alkali metal hydrides (AH) or carboxylates, A(O 2 CR), PnPh 3 , and elemental chalcogens as synthetic precursors and oleylamine or 1-octadecene as solvents. Synthetic manipulation via fine-tuning of reaction temperature enables control over the degree of ordering caused by the Sb 5s 2 lone pair-induced distortions in NaSbS 2 . Pair distribution function analysis demonstrates that the structure of the Sb-containing phases deviates much more from a disordered rock salt structure than that of the Bi-containing phases. This local distortion, induced by the Sb lone pair, leads to a previously unreported noncentrosymmetric NaSbS 2 crystal structure, which is additionally supported by second-harmonic generation measurements. Infrared and multinuclear solid-state NMR spectroscopies show that oleylamine or chelating carboxylates and, in some cases, unreacted precursors (LiH and PnPh 3 ) remain bound to the nanocrystalline surfaces. Further, a deeper understanding of the local atomic environment, long-range ordering, surface chemistry, and optoelectronic properties of these materials may speed up their fundamental study and application.
36 MATERIALS SCIENCE↗
Determining the Structure-Property Relationships of Quasi-Two-Dimensional Semiconductor Nanoplatelets.
We report a theoretical study of CdSe nanoplatelets aimed at identifying the main factors determining their photophysical properties. Using atomic configurations optimized with density functional theory calculations, we computed quasiparticle and exciton binding energies of nanoplatelets with two to seven monolayers. We employed many body perturbation theory at the GW level and solved the Bethe-Salpeter equation to obtain absorption spectra and excitonic properties. Our results, which agree well with recent experiments, were then used to design a model that allows us to disentangle the effects of quantum confinement, strain induced by passivating ligands, and dielectric environment on the electronic properties of nanoplatelets. We found that, for the model to accurately reproduce our first principle results, it is critical to account for surface stress and consider a finite potential barrier and energy-dependent effective masses when describing quantum confinement. Our findings call into question previous assumptions on the validity of an infinite barrier to describe carrier confinement in nanoplatelets, suggesting that it may be possible to optimize interfacial charge transfer and extraction by appropriately choosing passivating ligands. The model developed here is generalizable to core-shell platelets and enables the description of system sizes not yet directly treatable by first-principles calculations.
Greenwood, Arin R.↗
Programmable hyperbolic polaritons in van der Waals semiconductors
Lighting a route for hyperbolic dispersion The propagation of light within a material is usually well defined, with the propagation described by scattering and dispersion. In artificially designed metamaterials and in anisotropic layered materials, the dispersion can be hyperbolic, giving rise to subwavelength confinement of the light. Sternbach et al. show that the hyperbolic dispersion can be optically switched on and off on demand in the layered transition metal dichalcogenide tungsten diselenide (see the Perspective by Deng and Chen). Illuminating the material with ultrafast pulses of sub-bandgap light creates a transient waveguide, resulting in hyperbolic dispersion in the material. The ability to tune the dispersion characteristics on demand using optical pumping is an effective approach for developing ultrafast switching photonic devices and controlling the propagation of light on the nanoscale. Science , this issue p. 617 ; see also p. 572
Science & Technology - Other Topics↗
Defect modeling in semiconductors: the role of first principles simulations and machine learning
Abstract Point defects in semiconductors dictate their electronic and optical properties. Vacancies, interstitials, substitutional defects, and defect complexes can form in the semiconductor lattice and significantly impact its performance in applications such as solar absorption, light emission, electronics, and catalysis. Understanding the nature and energetics of point defects is essential for the design and optimization of next-generation semiconductor technologies. Here, we provide a comprehensive overview of the current state of research on point defects in semiconductors, focusing on the application of density functional theory (DFT) and machine learning (ML) in accelerating the prediction and understanding of defect properties. DFT has been instrumental in accurately calculating defect formation energies, charge transition levels, and other defect-related properties such as carrier recombination rates and lifetimes, and ion migration barriers. ML techniques, particularly neural networks, have emerged as powerful tools for enabling rapid prediction of defect properties at DFT-accuracy in order to overcome the expense of using large supercells and advanced functionals. We begin this article with a discussion of different types of point defects and complexes, their impact on semiconductor properties, and the experimental and DFT approaches typically used for their characterization. Through multiple case studies, we explore how DFT has been successfully applied to understand defect behavior across a variety of semiconductors, and how ML approaches integrated with DFT can efficiently predict defect properties and facilitate the discovery of new materials with tailored defect behavior. Overall, the advent of ‘DFT+ML’ promises to drive advancements in semiconductor technology, catalysis, and renewable energy applications, paving the way for the development of high-performance semiconductors which are defect-tolerant or have desirable dopability.
Rahman, Md Habibur (ORCID:000000027705984X)↗
F4‐TCNQ as an Additive to Impart Stretchable Semiconductors with High Mobility and Stability
Abstract Numerous strategies are developed to impart stretchability to polymer semiconductors. Although these methods improve the ductility, mobility, and stability of such stretchable semiconductors, they nonetheless still need further improvement. Here, it is shown that 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracyanoquinodimethane (F4‐TCNQ) is an effective molecular additive to tune the properties of a diketopyrrolopyrrole‐based (DPP‐based) semiconductor. Specifically, the addition of F4‐TCNQ is observed to improve the ductility of the semiconductor by altering the polymer’s microstructures and dynamic motions. As a p‐type dopant additive, F4‐TCNQ can also effectively enhance the mobility and stability of the semiconductor through changing the host polymer’s packing structures and charge trap passivation. Upon fabricating fully stretchable transistors with F4‐TCNQ‐DPP blended semiconductor films, it is observed that the resulting stretchable transistors possess one of the highest initial mobility of 1.03 cm 2 V −1 s −1 . The fabricated transistors also exhibit higher stability (both bias and environmental) and mobility retention under repeated strain, compared to those without F4‐TCNQ additive. These findings offer a new direction of research on stretchable semiconductors to facilitate future practical applications.
Mun, Jaewan↗
n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication
The p-n junction is one of the fundamental requirements for a practical semiconductor-based electronic device. Designing a heterojunction comprising of dissimilar p-type and n-type semiconductors calls for careful energy level considerations, both when selecting the semiconductor materials as well as the metal contacts. A homojunction based on a single semiconductor simplifies this task, as energy levels of the p-type and n-type materials are already fairly similar, allowing for easier selection of contacts. Traditionally, homojunctions rely on doping of a bulk semiconductor to achieve p- and n-type transport through controlled addition of aliovalent dopants via energy-intensive processes such as ion implantation or thermal annealing. Exact control of doping in nanocrystalline semiconductors is significantly more challenging, due to self-purification effects. However, owing to their large surface areas, surface moieties can be utilized to both dope the nanostructures as well as tune their energy levels. Here, we present a facile technique based on an isoelectronic surface dopant in order to achieve p- and n-type materials based on the same semiconductor. We show that thin p-type colloidal Bi 2 Te 3 nanowires can be switched to n-type through surface functionalization, thus increasing the availability of new nanocrystalline solution-processable p-n homojunctions.
42 ENGINEERING↗
Conductive strip based mask for metallization of semiconductor devices
Methods of manufacturing a semiconductor device, and resulting semiconductor device are described. In an example, the method for manufacturing a semiconductor device include forming a semiconductor region and forming a metal seed region over the semiconductor region. The method can include placing a conductive strip over a first portion of the metal region, where the conductive strip is formed over the semiconductor region. The method can include bonding a contacting portion of the conductive strip to the first portion the metal region. The method can include etching a second portion of the metal region and where the conductive strip inhibits etching of the first portion of the metal region. In an example, the conductive strip can have a coating. In one example, the semiconductor device can be a solar cell.
14 SOLAR ENERGY↗
High-purity germanium semiconductor modeling in the detector response function toolkit
In this study, we have extended the detector response function toolkit (DRiFT) to provide modeling capabilities of semiconductor sensors. DRiFT provides realistic nuclear instrumentation response by post-processing Monte-Carlo N-particle (MCNP®) radiation transport outputs. MCNP® is capable of modeling radiation transport in complex environments, but has limited detector physics and readout electronics modeling capabilities. Semiconductor detector response can be calculated with a high-fidelity for a flexible range of environments by utilizing MCNP® to simulate radiation interactions inside of detector volumes, and then using DRiFT to model charge transport and signal formation in the semiconductor, as well as the readout electronics. DRiFT models charge transport in the semiconductor, the preamplifier, shaping amplifier, pulse pile-up, and electronic noise to generate detector response. The semiconductor application in DRiFT can model a range of semiconductor materials, shapes, and sizes; and is demonstrated here for a large volume coaxial high-purity germanium (HPGe) detector. Here, we compare detector response functions of a coaxial HPGe detector with measurement of 60 Co, 133 Ba, and 137 Cs at varying count rates, and we conduct a parameter study to demonstrate the effect of changing parameters in the DRiFT simulation. The HPGe detector response function shows excellent agreement with measurements of difference sources with varying dead times and count rates.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Catalytically mediated epitaxy of 3D semiconductors on van der Waals substrates
The formation of well-controlled interfaces between materials of different structure and bonding is a key requirement when developing new devices and functionalities. Of particular importance are epitaxial or low defect density interfaces between two-dimensional materials and three-dimensional semiconductors or metals, where an interfacial structure influences electrical conductivity in field effect and optoelectronic devices, charge transfer for spintronics and catalysis, and proximity-induced superconductivity. Epitaxy and hence well-defined interfacial structure has been demonstrated for several metals on van der Waals-bonded substrates. Semiconductor epitaxy on such substrates has been harder to control, for example during chemical vapor deposition of Si and Ge on graphene. Here, we demonstrate a catalytically mediated het-eroepitaxy approach to achieve epitaxial growth of three-dimensional semiconductors such as Ge and Si on van der Waals-bonded materials such as graphene and hexagonal boron nitride. Epitaxy is "transferred" from the substrate to semiconductor nanocrystals via solid metal nano-crystals that readily align on the substrate and catalyze the formation of aligned nuclei of the semiconductor. In situ transmission electron microscopy allows us to elucidate the reaction pathway for this process and to show that solid metal nanocrystals can catalyze semiconductor growth at a significantly lower temperature than direct chemical vapor deposition or deposition mediated by liquid catalyst droplets. We discuss Ge and Si growth as a model system to explore the details of such hetero-interfacing and its applicability to a broader range of materials.
36 MATERIALS SCIENCE↗
Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors
Abstract Efficient terahertz generation and detection are a key prerequisite for high performance terahertz systems. Major advancements in realizing efficient terahertz emitters and detectors were enabled through photonics-driven semiconductor devices, thanks to the extremely wide bandwidth available at optical frequencies. Through the efficient generation and ultrafast transport of charge carriers within a photo-absorbing semiconductor material, terahertz frequency components are created from the mixing products of the optical frequency components that drive the terahertz device – a process usually referred to as photomixing. The created terahertz frequency components, which are in the physical form of oscillating carrier concentrations, can feed a terahertz antenna and get radiated in case of a terahertz emitter, or mix with an incoming terahertz wave to down-convert to DC or to a low frequency photocurrent in case of a terahertz detector. Realizing terahertz photoconductors typically relies on short-carrier-lifetime semiconductors as the photo-absorbing material, where photocarriers are quickly trapped within one picosecond or less after generation, leading to ultrafast carrier dynamics that facilitates high-frequency device operation. However, while enabling broadband operation, a sub-picosecond lifetime of the photocarriers results in a substantial loss of photoconductive gain and optical responsivity. In addition, growth of short-carrier-lifetime semiconductors in many cases relies on the use of rare elements and non-standard processes with limited accessibility. Therefore, there is a strong motivation to explore and develop alternative techniques for realizing terahertz photomixers that do not rely on these defect-introduced short-carrier-lifetime semiconductors. This review will provide an overview of several promising approaches to realize terahertz emitters and detectors without short-carrier-lifetime semiconductors. These novel approaches utilize p-i-n diode junctions, plasmonic nanostructures, ultrafast spintronics, and low-dimensional materials to offer ultrafast carrier response. These innovative directions have great potentials for extending the applicability and accessibility of the terahertz spectrum for a wide range of applications.
36 MATERIALS SCIENCE↗
Wide Bandgap Semiconductors for Extreme Temperature and Radiation Environments
With their greater voltage breakdowns, higher current limitations, and faster switching speeds, wide bandgap semiconductors are increasing in market application over the traditionally dominant silicon devices. Silicon carbide semiconductors have been increasing the efficiency and reducing the footprint of modern power electronics, and the increased electron mobility of gallium nitride semiconductors have been increasing the switching frequencies of radio frequency circuits. In extreme temperature (>225°C) applications and high radiation environments such as low earth orbit, deep space, and terrestrial nuclear reactors, silicon-based semiconductors degrade rapidly. Wide bandgap semiconductors are poised to disrupt the market for sensing, instrumentation, and communication circuitry in these hazardous environments by increasing the lifetime, safety, and reliability. This report outlines the advantages of using wide bandgap semiconductor materials in extreme temperature and radiation environments.
36 MATERIALS SCIENCE↗
Drivers for paralleled semiconductor switches
An apparatus includes a plurality of parallel-connected semiconductor switches (e.g., silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) or other wide-bandgap semiconductor switches) and a plurality of driver circuits having outputs configured to be coupled to control terminals of respective ones of the plurality of semiconductor switches and configured to drive the parallel-connected semiconductor switches responsive to a common switch state control signal. The driver circuits may have respective different power supplies, which may be adjustable. Respective output resistors may couple respective ones of the driver circuits to respective ones of the semiconductor switches. The output resistors may be adjustable.
Nojima, Geraldo↗
Molecular Functionalization of Semiconductor Surfaces
The presence of molecules on semiconductor surfaces can have a profound impact on their properties and applications in solar energy conversion. In this chapter we discuss the methods used to effect functionalization of semiconductor surfaces with molecular dipoles and catalysts. A major focus is the energetic impacts such molecules have to the fields at the semiconductor|contact interface. These field modulations are strongly dependent on the nature of the surface-bound molecule including its dipole moment and orientation as well as the distance of the dipole from the semiconductor surface. The contacting phase also has a strong impact on the energetics, since ions in the liquid electrolytes relevant to inorganic photochemistry partially screen dipolar effects at the surface. In addition to detailed description of these fundamentals, we present the history of this field as well as state-of-the-art chemistries that leverage the preceding decades of knowledge to impart the molecular interfacial layer with dynamic properties such as light absorption and catalysis. The challenges of establishing stable molecular attachment schemes at semiconductor|electrolyte interfaces are interwoven throughout the chapter. We conclude with a prognosis and future outlook that we hope will be a useful guide to those interested in developing the next generation of molecular chemistries at photoelectrode interfaces.
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,I↗
Direct Optoelectronic Imaging of 2D Semiconductor–3D Metal Buried Interfaces
The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing voltage drop at this junction is of particularly challenging and important. Despite numerous studies on contact resistance in 2D semiconductors, the exact nature of the buried interface under a 3D metal remains elusive and unclear. Herein, we report the direct observation of 2D semiconductor-metal buried interface using recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS 2 interface are correlated under variety of metal deposition conditions as well as type of metal contacts. We observe that direct evaporation of Au on MoS 2 induces large strain of ~5% in the MoS 2 which coupled with charge transfer leads to degenerate doping of the MoS 2 underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kΩ μm measured using local conductance probes. This approach was adopted to investigate MoS 2 -In/Au alloy interface, which records lowest contact resistance of 63 kΩ μm. Overall, our results highlight that the MoS 2 /Metal interface is very sensitive to method of contact making and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Control of light, spin and charge with chiral metal halide semiconductors
We report the relationship between the structural asymmetry and optoelectronic properties of functional materials is an active area of research. The movement of charges through an oriented chiral medium depends on the spin configuration of the charges, and such systems can be used to control spin populations without magnetic components - termed the chiral-induced spin selectivity (CISS) effect. CISS has mainly been studied in chiral organic molecules and their assemblies. Semiconductors are non-magnetic extended systems that allow for the control of charge transport, as well as the absorption and emission of light. Therefore, introducing chirality into semiconductors would enable control over charge, spin and light without magnetic components. Chiral metal halide semiconductors (MHSs) are hybrid organic-inorganic materials that combine the properties of small chiral organic molecules with those of extended inorganic semiconductors. Reports of CISS in chiral MHSs have resulted in breakthroughs in our understanding of CISS and in the realization of spin-dependent optoelectronic properties. This Review examines the fundamentals and applications of CISS in chiral MHSs. The structural diversity and key structure-property relationships, such as chiral transfer from the organic to the inorganic components, are summarized. With a focus on the underlying chemistry and physics, the control of spin, light and charge in these semiconductors is explored.
14 SOLAR ENERGY↗
Wide bandgap semiconductor materials and devices
The technological and societal impacts of electronic devices based on Ge, Si, and compound semiconductors like GaAs have been profound, fueling the decades long quest in identifying ever-larger bandgap semiconductors to untap new applications and possibilities. Specifically, an increase in the bandgap leads to shorter wavelength emission and an increased breakdown electric field, which has direct consequences for solid-state lighting like light-emitting diodes (LEDs) and laser diodes (LDs) from the visible (blue-green, blue, and violet) and beyond (UV and deep-UV) spectral range and for radically improved power devices supported by a higher intrinsic breakdown strength. Wide bandgap (WBG) semiconductors represent the frontier of materials that satisfy these criteria and include group IV, III–V, and II–VI material families like SiC (3.2 eV), GaN (3.4 eV), and ZnO (3.4 eV), respectively. With even larger bandgaps exceeding 4 eV, ultrawide bandgap (UWBG) semiconductors include diamond, III-nitrides incorporating Al and B (e.g., AlN, BN, and AlGaN), and sesquioxides like Ga 2 O 3 and (Al,Ga) 2 O 3 . These materials span widely varying stages of technological maturity, with SiC and GaN platforms among the most mature with commercially available devices in RF and high-power electronics, while other platforms such as Ga 2 O 3 rapidly advancing and poised to enable new UV and deep-UV optoelectronic devices. This Special Topic on Wide Bandgap Semiconductor Materials and Devices covers broad research subtopics on WBG and UWBG materials that span bulk crystals, epitaxy and substrate technologies, fundamental defect science, and doping, as well as electronic and optoelectronic device fabrication and characterization. Here, we highlight works from the collection, which we categorize by material platform of SiC, III-nitrides, and Ga 2 O 3 and related alloys.
36 MATERIALS SCIENCE↗