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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

The glass transition, crystallization and melting in Au-Pb-Sb alloys

The glass transition, crystallization and melting of Au(55)Pb(22.5)Sb(22.5) alloys have been studied by differential scanning calorimetry DSC. Crystallization on heating above the glass transition temperature Tg (45 C) begins at 64 C. Further crystallization events are observed at 172 C and 205 C. These events were found to correspond to the formation of the intermetallic compounds AuSb2, Au2Pb, and possibly AuPb2, respectively. Isothermal DSC scans of the glassy alloy above Tg were used to monitor the kinetics of crystallization. The solidification behavior and heat capacity in the glass-forming composition range were determined with droplet samples. An undercooling level of 0.3T(L) below the liquidus temperature T(L) was achieved, resulting in crystallization of different stable and metastable phases. The heat capacity C(P) of the undercooled liquid was measured over an undercooling range of 145 C.

Lee, M. C.↗
NASA NTRS1989

The influence of Sb doping on the growth and electronic properties of GaAs(100) and AlGaAs(100)

Isoelectronic doping using antimony has been shown to reduce traps and improve material properties during epitaxial growth of Si doped GaAs(100) and AlGaAs(100). In this study, the effect of the antimony dopant on the optimal growth temperature is examined with the aim of producing high-quality heterostructures at lower temperatues. High-quality films of GaAs and AlGaAs have been grown by molecular-beam epitaxy at the normal growth temperatures of 610 and 700 C, respectively, and 50-100 C below this temperature using varying small amounts of Sb as a dopant. Electrical properties of the films were then examined using Hall mobility measurements and deep-level transient spectroscopy.

Jamison, K. D.↗
NASA NTRS1990

A systematic study of superconductivity in BiPb(Sn)-Sb Sr-Ca-Cu-O systems

Superconducting transition above 160 K has been reported in the Bi-Pb-Sb-Sr-Ca-Cu-O system. Results of a systematic study emphasizing the correlations between the type and amount of dopant, and superconducting transition is presented. The effect of Sn (instead of Pb) substitution is also highlighted.

Akbar, Sheikh A.↗
NASA NTRS1992

The structure of NGC at 100, 160, and 200 microns - Continuum dust emission in a quiescent Sb galaxy

Observations of NGC 4565 at 100, 160, and 200 microns with the University of Chicago Far-Infrared Camera and the NASA-Kuiper Airborne Observatory are reported. In order to examine the dependence of FIR emission on spiral structure and star formation activity, these observations of NGC 4565, a quiescent Sb galaxy, are compared with observations of NGC 6946, an active Sc galaxy, made by Engargiola (1991) using the same instruments. Warm dust (30 K) in a bisymmetric spiral pattern superposed on an exponential disk of cool dust (20 K) can account for the FIR morphology of NGC 4565. Optical and IR data suggest that there are more embedded sources heating dust locally in the southeast arm region and more UV radiation from unobscured young stellar associations heating the cool, neutral medium in the northeast arm region.

Engargiola, G.↗
NASA NTRS1994

Synthesis Of Ir(1-x-y)Rh(x)Co(y)Sb(3) Semiconductors

Ir(1-x-y)Rh(x)Co(y)Sb(3) semiconductors synthesized by gradient-freeze and sintering techniques. Sintering techniques used for variety of compositions; gradient-freeze technique used for RhSb(3) and CoSb(3).

Caillat, Thierry↗
NASA NTRS1994

The first large format SI:SB BIB arrays

The first 128x128 Si:Sb blocked impurity band (BIB) detectors, manufactured by Rockwell International, are sensitive detectors from 10 to at least 40 micrometers. While further work is required to make these arrays suitable for the low backgrounds of space infrared telescopes, they can be used now for observations from the ground and aircraft.

Van Cleve, J. E.↗
NASA NTRS2003

Effect of Crucible Diameter Reduction on the Convection, Macrosegregation, and Dendritic Morphology during Directional Solidification of Pb-2.2 Wt Pct Sb Alloy

The Pb-2.2 wt pct Sb alloy has been directionally solidified in 1-, 2-, 3-, and 7-mm-diameter crucibles with planar and dendritic liquid-solid interface orphology. For plane front solidification, the experimentally observed macrosegregation along the solidified length follows the relationship proposed by Favier. Application of a 0.4 T transverse magnetic field has no effect on the extent of convection. Reducing the ampoule diameter appears to decrease the extent of convection. However, extensive convection is still present even in the 1-mm-diameter crucible. An extrapolation of the observed behavior indicated that nearly diffusive transport conditions require ampoules that are about 40 microns in diameter. Reduction of the crucible diameter does not appear to have any significant effect on the primary dendrite spacing. However, it results in considerable distortion of the dendrite morphology and ordering. This is especially true for the 1-mm diameter samples.

Chen, Jun↗
NASA NTRS1997

Thermal Conductivity of Zn(sub 4-x)Cd (sub x)Sb(sub 3) Solid Solutions

B-Zn(sub 4-x)Cd(sub x)Sb(sub 3) was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K.

Thermal Conductivity thermoelectric material↗
NASA NTRS2005

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 (deg)C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

charged coupled devices (CCDs)↗
NASA NTRS2006

Bias Selective Operation of Sb-Based Two-Color Photodetectors

Multicolor detectors have a strong potential to replace conventional single-color detectors in application dealing with the simultaneous detection of more than one wavelength. This will lead to the reduction of heavy and complex optical components now required for spectral discrimination for multi-wavelengths applications. This multicolor technology is simpler, lighter, compact and cheaper with respect to the single-color ones. In this paper, Sb-based two-color detectors fabrication and characterization are presented. The color separation is achieved by fabricating dual band pn junction on a GaSb substrate. The first band consists of an InGaAsSb pn junction for long wavelength detection, while the second band consists of a GaSb pn junction for shorter wavelength detection. Three metal contacts were deposited to access the individual junctions. Surface morphology of multi-layer thin films and also device characteristics of quasi-dual band photodetector were characterized using standard optical microscope and electro-optic techniques respectively. Dark current measurements illustrated the diode behavior of both lattice-matched detector bands. Spectral response measurements indicated either independent operation of both detectors simultaneously, or selective operation of one detector, by the polarity of the bias voltage, while serially accessing both devices.

Abedin, M. N.↗
NASA NTRS2006

Recent Development of Sb-based Phototransistors in the 0.9- to 2.2-microns Wavelength Range for Applications to Laser Remote Sensing

We have investigated commercially available photodiodes and also recent developed Sb-based phototransistors in order to compare their performances for applications to laser remote sensing. A custom-designed phototransistor in the 0.9- to 2.2-microns wavelength range has been developed at AstroPower and characterized at NASA Langley's Detector Characterization Laboratory. The phototransistor's performance greatly exceeds the previously reported results at this wavelength range in the literature. The detector testing included spectral response, dark current and noise measurements. Spectral response measurements were carried out to determine the responsivity at 2-microns wavelength at different bias voltages with fixed temperature; and different temperatures with fixed bias voltage. Current versus voltage characteristics were also recorded at different temperatures. Results show high responsivity of 2650 A/W corresponding to an internal gain of three orders of magnitude, and high detectivity (D*) of 3.9x10(exp 11) cm.Hz(exp 1/2)/W that is equivalent to a noise-equivalent-power of 4.6x10(exp -14) W/Hz(exp 1/2) (-4.0 V @ -20 C) with a light collecting area diameter of 200-microns. It appears that this recently developed 2-micron phototransistor's performances such as responsivity, detectivity, and gain are improved significantly as compared to the previously published APD and SAM APD using similar materials. These detectors are considered as phototransistors based-on their structures and performance characteristics and may have great potential for high sensitivity differential absorption lidar (DIAL) measurements of carbon dioxide and water vapor at 2.05-microns and 1.9-microns, respectively.

Abedin, M. Nurul↗
NASA NTRS2008

MEMS/ECD Method for Making Bi(2-x)Sb(x)Te3 Thermoelectric Devices

A method of fabricating Bi(2-x)Sb(x)Te3-based thermoelectric microdevices involves a combination of (1) techniques used previously in the fabrication of integrated circuits and of microelectromechanical systems (MEMS) and (2) a relatively inexpensive MEMS-oriented electrochemical-deposition (ECD) technique. The present method overcomes the limitations of prior MEMS fabrication techniques and makes it possible to satisfy requirements.

Lim, James↗
NASA NTRS2009

Mo(3)Sb(7-x)Te(x) for Thermoelectric Power Generation

Compounds having compositions of Mo(3)Sb(7-x)Te(x) (where x = 1.5 or 1.6) have been investigated as candidate thermoelectric materials. These compounds are members of a class of semiconductors that includes previously known thermoelectric materials. All of these compounds have complex crystalline and electronic structures. Through selection of chemical compositions and processing conditions, it may be possible to alter the structures to enhance or optimize thermoelectric properties.

Snyder, G. Jeffrey↗
NASA NTRS2015

Filled Co (sub X) Ni (sub 4-x) Sb (sub 12-y) Sn (sub Y) Skutterudites: Processing and Thermoelectric Properties

Skutterudites have proven to be a useful thermoelectric system as a result of their enhanced figure of merit (ZT1), cheap material cost, favorable mechanical properties, and good thermal stability. The majority of skutterudite interest in recent years has been focused on binary skutterudites like CoSb3 or CoAs3. Binary skutterudites are often double and triple filled, with a range of elements from the lanthanide series, in order to reduce the lattice component of thermal conductivity. Ternary and quaternary skutterudites, such as Co4Ge6Se6 or Ni4Sb8Sn4, provide additional paths to tune the electronic structure. The thermal conductivity can further be improved in these complex skutterudites by the introduction of fillers. The Co (sub X) Ni (sub 4-x) Sb (sub 12-y) Sn (sub Y) system has been investigated as both a p- and n-type thermoelectric material, and is stable up to 200 degrees Centigrade. Yb, Ce, and Dy fillers have been introduced into the skutterudite to study the influence of both the type and the quantity of fillers on processing conditions and thermoelectric properties. The system was processed through a multi-step technique that includes solidification, mechano-chemical alloying, and hot pressing which will be discussed along with thermoelectric transport properties.

Thermoelectricity↗
NASA NTRS2016

Filled Nd(sub z) Fe(sub x) Co(sub 4-x) Sb(sub 12-y) Ge(sub y) Skutterudites: Processing and Thermoelectric Properties

Skutterudites have proven to be a useful thermoelectric system as a result of their enhanced figure of merit (ZT1), cheap material cost, favorable mechanical properties, and good thermal stability. The majority of skutterudite interest in recent years has been focused on binary skutterudites like CoSb3. Binary skutterudites are often double and triple filled, with a range of elements from the lanthanide series, in order to reduce the lattice component of thermal conductivity. Ternary and quaternary skutterudites, such as Co4Ge6Se6 or Ni4Sb8Sn4, provide additional paths to tune the electronic structure. The thermal conductivity can further be improved in these complex skutterudites by the introduction of fillers. The Nd (sub z) Fe (sub x) Co (sub 4-x) Sb (sub 12-y)Ge (sub y) system has been investigated as a p-type thermoelectric material, and is stable up to 600 degrees Centigrade. The influence of Fe and Ge content, along with filler Nd, was investigated on thermoelectric transport properties. In addition to the chemical influence on properties, some processing details of the system will also be addressed.

Electical Conductivity↗
NASA NTRS2016

Filled Nd(z)Fe(x)Co(4-x)Sb(12-y)Ge(y) Skutterudites: Processing and Thermoelectric Properties

Skutterudites have proven to be a useful thermoelectric system as a result of their enhanced figure of merit (ZT1), cheap material cost, favorable mechanical properties, and good thermal stability. The majority of skutterudite interest in recent years has been focused on binary skutterudites like CoSb3. Binary skutterudites are often double and triple filled, with a range of elements from the lanthanide series, in order to reduce the lattice component of thermal conductivity. Ternary and quaternary skutterudites, such as Co4Ge6Se6 or Ni4Sb8Sn4, provide additional paths to tune the electronic structure. The thermal conductivity can further be improved in these complex skutterudites by the introduction of fillers. The Nd(z)Fe(x)Co(4-x)Sb(12-y)Ge(y) system has been investigated as a p-type thermoelectric material, and is stable up to 600 C. The influence of Fe and Ge content, along with filler Nd, was investigated on thermoelectric transport properties. In addition to the chemical influence on properties, some processing details of the system will also be addressed.

Thermoelectric↗