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Towards smart corrective switching: analysis and advancement of PJM's switching solutions
Transmission switching, as a power flow control mechanism that can reduce costs and improve reliability, has gained a lot of attention during the last decade. Despite its benefits, industry adoption has been very limited due to its computational complexity, stability and AC performance concerns. Pennsylvania New Jersey Maryland (PJM) has published a list of corrective switching solutions to relieve actual and post‐contingency network violations. The list is developed based on operators ’ prior knowledge and offline studies. This study employs a fast AC‐based real‐time contingency analysis (RTCA) tool with corrective transmission switching (CTS) functionality to analyse PJM's switching solutions with actual PJM data. The results show that the RTCA CTS tool is almost always able to find solutions that perform better than, or equally as well as, PJM's solutions. The results also show that PJM's list identifies solutions for only 3% of the problematic contingencies with post‐contingency violations over the course of one week. The RTCA CTS tool, however, is able to find corrective TS solutions for almost all the cases. The results suggest that CTS is ripe for industry adoption. The tool provides significant savings and would pave the road towards a smarter transmission network as an essential ingredient of the future smart grid.
In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO{sub 2}/TiN cells
In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching in metal-oxide-metal samples is presented. In detail, a novel in-operando hard X-ray photoelectron spectroscopy technique is applied to non-destructively investigates the influence of the current compliance and direct current voltage sweep cycles on the Ti/HfO{sub 2} interface chemistry and physics of resistive switching Ti/HfO{sub 2}/TiN cells. These studies indeed confirm that current compliance is a critical parameter to control the amount of oxygen vacancies in the conducting filaments in the oxide layer during the RRAM cell operation to achieve stable switching. Furthermore, clear carbon segregation towards the Ti/HfO{sub 2} interface under electrical stress is visible. Since carbon impurities impact the oxygen vacancy defect population under resistive switching, this dynamic carbon segregation to the Ti/HfO{sub 2} interface is suspected to negatively influence RRAM device endurance. Therefore, these results indicate that the RRAM materials engineering needs to include all impurities in the dielectric layer in order to achieve reliable device performance.
In-situ observation of self-regulated switching behavior in WO{sub 3-x} based resistive switching devices
The transmittance of tungsten oxides can be adjusted by oxygen vacancy (V{sub o}) concentration due to its electrochromic property. Here, we report an in-situ observation of resistive switching phenomenon in the oxygen-deficient WO{sub 3-x} planar devices. Besides directly identifying the formation/rupture of dark-colored conductive filaments in oxide layer, the stripe-like WO{sub 3-x} device demonstrated self-regulated switching behavior during the endurance testing, resulting in highly consistent switching parameters after a stabilizing process. For very high V{sub o}s mobility was demonstrated in the WO{sub 3-x} film by the pulse experiment, we suggested that the electric-field-induced homogeneous migration of V{sub o}s was the physical origin for such unique switching characteristics.
Effect of heavy metal layer thickness on spin-orbit torque and current-induced switching in Hf|CoFeB|MgO structures
We study the heavy metal layer thickness dependence of the current-induced spin-orbit torque (SOT) in perpendicularly magnetized Hf|CoFeB|MgO multilayer structures. The damping-like (DL) current-induced SOT is determined by vector anomalous Hall effect measurements. A non-monotonic behavior in the DL-SOT is found as a function of the thickness of the heavy-metal layer. The sign of the DL-SOT changes with increasing the thickness of the Hf layer in the trilayer structure. As a result, in the current-driven magnetization switching, the preferred direction of switching for a given current direction changes when the Hf thickness is increased above ∼7 nm. Although there might be a couple of reasons for this unexpected behavior in DL-SOT, such as the roughness in the interfaces and/or impurity based electric potential in the heavy metal, one can deduce a roughness dependence sign reversal in DL-SOT in our trilayer structure.
Q-switched and gain-switched Fe:ZnSe lasers tunable over 360–515 µm
We report on room temperature gain-switched and Q-switched Fe:ZnSe lasers tunable over 3.60–5.15 µm pumped by radiation of an 2.94 µm Er:YAG laser. The maximum output energy was measured to be 5 mJ under 15 mJ of pump energy in gain-switched regime. We also demonstrated a mechanically Q-switched regime of oscillation of Fe:ZnSe lasers. This approach could be attractive for the development of high-energy short-pulse solid-state mid-IR systems operating over 3.6–5.2 µm spectral range.
Switching Transition Analysis and Optimization for Bidirectional CLLC Resonant DC Transformer
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Deep Optical Switching on Subpicosecond Timescales in an Amorphous Ge Metamaterial
Active nanostructured optical components show promise as potential building blocks for novel light-based computing and data processing architectures. However, nanoscale all-optical switches that have low activation powers and high-contrast ultrafast switching have been elusive so far. Here, pump–probe measurements performed on amorphous-Ge-based micro-resonator metasurfaces that exhibit strong resonant modes in the mid-infrared are reported. Relative change is observed in transmittance of ΔT/T ≈ 1 with picosecond (down to τ ≈ 0.5 ps) free carrier relaxation rates, obtained with very low pump fluences of 50 μJ cm –2 . In this work, these observations are attributed to efficient free carrier promotion, affecting light transmittance via high quality-factor optical resonances, followed by an increased electron–phonon scattering of free carriers due to the amorphous crystal structure of Ge. Full-wave simulations based on a permittivity model that describes free-carrier damping through crystal structure disorder find excellent agreement with the experimental data. These findings offer an efficient and robust platform for all-optical switching at the nanoscale.
Reversible Morphology Switching of Colloidal Particles
A facile method has been discovered that enables switching of non-cross-linked poly(styrene) (Nx-PS) colloidal particle morphologies, including spherical and anisotropic convex- convex, plano-convex, and concave-convex. The anisotropic morphologies can be achieved readily from spherical Nx-PS particles through control of annealing time at elevated temperatures or surfactant concentration. These anisotropic morphologies can be reversed to spherical at lower temperatures, and reversible morphology switching between any pair of anisotropic morphologies also can be attained. This approach to particle morphology switching establishes a straightforward method for the synthesis of designer anisotropic particles using commercially available spherical particles as starting materials.
On the possibility of a new passively Q-switched laser operation mode with periodic wavelength switching
The possibility of cw-pumped passively Q-switched laser operation has been examined theoretically. Also, we have proposed laser operation mode in which the output wavelength automatically switches between two values without any changes in cavity parameters. Using numerical simulation and an Er:YAG laser with a Co:ZnSe passive Q-switch as an example, we have found parameters that ensure such operation mode. (lasers)
Broadband electrically tunable VO 2 -Metamaterial terahertz switch with suppressed reflection
Not provided.
Anomalous reduction of the switching voltage of Bi-doped Ge{sub 0.5}Se{sub 0.5} ovonic threshold switching devices
Switching devices based on Ovonic Threshold Switching (OTS) have been considered as a solution to overcoming limitations of Si-based electronic devices, but the reduction of switching voltage is a major challenge. Here, we investigated the effect of Bi-doping in Ge{sub 0.5}Se{sub 0.5} thin films on their thermal, optical, electrical properties, as well as on the characteristics of OTS devices. As Bi increased, it was found that both of the optical energy gap (E{sub g}{sup opt}) and the depth of trap states decreased resulting in a drastic reduction of the threshold voltage (V{sub th}) by over 50%. In addition, E{sub g}{sup opt} was found to be about three times of the conduction activation energy for each composition. These results are explained in terms of the Mott delocalization effect by doping Bi.
Nanoscale mechanical switching of ferroelectric polarization via flexoelectricity
Not Available
Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO{sub 3} thin films
We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO{sub 3} (a-LHO) thin films for non-volatile resistive random access memory applications. Nonpolar resistive switching (RS) was achieved in Pt/a-LHO/Pt memory cells with all four possible RS modes (i.e., positive unipolar, positive bipolar, negative unipolar, and negative bipolar) having high R{sub ON}/R{sub OFF} ratios (in the range of ∼10{sup 4}–10{sup 5}) and non-overlapping switching voltages (set voltage, V{sub ON} ∼ ±3.6–4.2 V and reset voltage, V{sub OFF} ∼ ±1.3–1.6 V) with a small variation of about ±5–8%. Temperature dependent current-voltage (I–V) characteristics indicated the metallic conduction in low resistance states (LRS). We believe that the formation (set) and rupture (reset) of mixed conducting filaments formed out of oxygen vacancies and metallic Ho atoms could be responsible for the change in the resistance states of the memory cell. Detailed analysis of I–V characteristics further corroborated the formation of conductive nanofilaments based on metal-like (Ohmic) conduction in LRS. Simmons-Schottky emission was found to be the dominant charge transport mechanism in the high resistance state.
Characterization of switching field distributions in Ising-like magnetic arrays
Not Available
Switch Opening and Exchange Method for Stochastic Distribution Network Reconfiguration
The purpose of distribution network reconfiguration (DNR) is to determine the optimal topology of an electricity distribution network, which is an efficient measure to reduce network power losses. Electricity load demand and photovoltaic (PV) output are uncertain and vary with time of day, and will affect the optimal network topology. Single-hour deterministic DNR is incapable of handling this uncertainty and variability. Therefore, this paper proposes to solve a multi-hour stochastic DNR (SDNR). Existing solution methods for DNR are either inaccurate or excessively time-consuming, and are therefore incapable of solving multi-hour SDNRs for large distribution networks. In this regard, a switch opening and exchange (SOE) method is proposed. Starting from a looped network with all switches closed, the SOE consists of three steps. The first step is to sequentially open the switches until all of the loops are opened. The second and third steps modify the status of branches obtained in the first step to obtain better radial topologies. Five test systems are used to validate the accuracy and fast solution speed of the SOE and the superiority of multi-hour SDNR over single-hour deterministic DNR.
Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies
Bidirectional, or four-quadrant switches (FQS) can be designed as back-to-back MOSFETs connected in common-drain (CD) or common-source (CS) topologies. CDFQS and CS-FQS assembled from discrete 1.2 kV commercially available SiC power MOSFETs were characterized to obtain capacitance and switching loss values. The CD-FQS exhibited a 1.17x larger turn-on loss compared to the CS-FQS, while the CS-FQS exhibited a 1.52x larger turn-off loss compared to the CD-FQS. The CS-FQS exhibited a lower input capacitance, while the CD-FQS exhibited a lower output and reverse transfer capacitance.