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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Enhancing visible light photocatalytic activity of direct Z-scheme SnS{sub 2}/Ag{sub 3}PO{sub 4} heterojunction photocatalysts

Highlights: • Novel direct Z-scheme SnS{sub 2}/Ag{sub 3}PO{sub 4} heterojunction photocatalysts are synthesized. • SnS{sub 2}/Ag{sub 3}PO{sub 4} exhibits much higher photocatalytic activity than pure SnS{sub 2} and Ag{sub 3}PO{sub 4}. • A possible photocatalytic mechanism was discussed in detail. - Abstract: Novel direct Z-scheme SnS{sub 2}/Ag{sub 3}PO{sub 4} heterojunction photocatalysts were successfully fabricated with SnS{sub 2} nanoplates hybridized by Ag{sub 3}PO{sub 4} nanoparticals via a facile hydrothermal and precipitation method and applied for the photocatalytic degradation of methyl orange in aqueous solution under visible light irradiation (λ > 420 nm). It was found that the photocatalytic performance of the SnS{sub 2} (2.0 wt%)/Ag{sub 3}PO{sub 4} heterojunction photocatalyst with 2.0 wt% SnS{sub 2} content was much higher than that of individual SnS{sub 2} and Ag{sub 3}PO{sub 4}. The enhanced photocatalytic activity could be ascribed to the efficient separation of photogenerated electrons and holes through the formation of direct Z-scheme system composed of SnS{sub 2} and Ag{sub 3}PO{sub 4}. Furthermore, the recycling experiments revealed that the photocorrosion behavior of Ag{sub 3}PO{sub 4} was strongly inhibited by SnS{sub 2}, it may be due to the photogenerated electrons of Ag{sub 3}PO{sub 4} would be quickly combined with the photogenerated holes of SnS{sub 2}. This work will be useful for the design of other direct Z-scheme visible-light-driven photocatalytic systems for application in energy conversion and environmental remediation.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Synthesis and Raman analysis of SnS nanoparticles synthesized by PVP assisted polyol method

SnS film was prepared by a simple drop casting method after synthesizing SnS nanoparticles by using PVP assisted polyol method. Confocal Raman study was carried out for the as deposited and annealed (150, 300 and 400 °C) films at two different excitation wavelengths 514 and 785 nm. At the excitation wavelength of 514 nm, the Raman modes showed for a mixed phase of SnS and SnS{sub 2} up to 150 °C and then only a pure SnS phase was observed up to 400 °C due to the dissociation of SnS{sub 2} in to SnS by releasing S. The increase in intensity of Raman (A{sub g} and B{sub 3g}) as well as IR (B{sub 3u}) active modes of SnS are observed with increasing annealing temperature at excitation wavelength 785 nm due to the increased crystallinity and inactiveness of SnS{sub 2} modes. X-ray diffraction confirming the formation of a single phase of SnS while the greater homogeneity in both size and shape of SnS nanoparticles were confirmed through surface morphology from SEM.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

SnS{sub 2} nanoflakes decorated multiwalled carbon nanotubes as high performance anode materials for lithium-ion batteries

Graphical abstract: The synthesized SnS{sub 2} nanoflakes decorated multiwalled carbon nanotubes hybrid structures exhibit large reversible capacity, superior cycling performance, and good rate capability as compared to pure SnS{sub 2} nanoflakes. - Highlights: • Synthesis of SnS{sub 2} nanoflakes decorated multiwalled carbon nanotubes hybrid structures. • Simple solution-phase approach. • Morphology feature of SnS{sub 2}. • Enhanced performance as Li-ion batteries. - Abstract: SnS{sub 2} nanoflakes decorated multiwalled carbon nanotubes (MWCNTs) hybrid structures are directly synthesized via a simple solution-phase approach. The as-prepared SnS{sub 2}/MWCNTs structures are investigated as anode materials for Li-ion batteries as compared with SnS{sub 2} nanoflakes. It has been found that the composite structure exhibit excellent lithium storage performance with a large reversible capacity, superior cycling performance, and good rate capability as compared to pure SnS{sub 2} nanoflakes. The first discharge and charge capacities have been found to be 1416 and 518 mA h g{sup −1} for SnS{sub 2}/MWCNTs composite electrodes at a current density of 100 mA g{sup −1} between 5 mV and 1.15 V versus Li/Li{sup +}. A stable reversible capacity of ∼510 mA h g{sup −1} is obtained for 50 cycles. The improved electrochemical performance may be attributed to the flake-morphology feature of SnS{sub 2} and the addition of MWCNTs that can hinder the agglomeration of the active materials and improve the conductivity of the composite electrode simultaneously.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Surface Passivation by Excess Sulfur for Controlled Synthesis of Large, Thin SnS Flakes

Tin sulfide (SnS) is part of the group IV chalcogenides (SnX, GeX; X: S, Se), a family of anisotropic layered materials considered for thin film photovoltaics, optoelectronics, and valleytronics, and predicted narrow bandgap multiferroic materials. Large ultrathin SnS flakes, suitable for a variety of applications, are challenging to synthesize because of the enhanced surface reactivity due to the open layer structure of SnS which gives rise to a competition between lateral and vertical growth. Here we investigate the effects of added sulfur on passivating the surface and modifying the balance between lateral expansion and thickening of SnS flakes in chemical vapor transport from a SnS precursor. In addition, we investigate the growth of SnS flakes and compare the results of synthesis from a pure SnS precursor with growth, in which a slight excess of sulfur is supplied in different ways. Our results demonstrate that small amounts of excess sulfur can profoundly affect the size and thickness distributions of SnS flakes. The largest and thinnest flakes are obtained if (i) traces of sulfur are added and (ii) the sulfur source consists either of small Sx fragments released at high temperatures from the reactor walls, or atomic S supplied by sublimation from SnS 2 . The likely mechanism for the observed growth modifications is a transient surface passivation of SnS flakes during growth, which reduces the reactivity of the top facet of the flakes, limits vertical growth, and thus gives rise to ensembles with increased lateral size and reduced thickness.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Ultrathin SnS{sub 2} nanosheets as robust polysulfides immobilizers for high performance lithium-sulfur batteries

Highlights: • Ultrathin SnS{sub 2} nanosheets have large surface area and fast charge transfer properties. • Ultrathin SnS{sub 2} nanosheets can greatly improve the electrochemical properties of S/C composites for Li-S batteries. • Superior electrochemical performance of S/C-SnS{sub 2}-10 composites can be ascribed to the optimized synergistic effects between SnS{sub 2} and porous carbon. - Abstract: Ultrathin SnS{sub 2} nanosheets modified sulfur/carbon (S/C-SnS{sub 2}) composites were synthesized through a facile method by mixing sublimed sulfur, Ketjen Black and ultrathin SnS{sub 2} nanosheets. The ultrathin SnS{sub 2} nanosheets can provide remarkable binding strength, large surface area and fast charge transfer, therefore leading to favorable chemical interaction with polysulfides in Li-S batteries. Accompanied with the synergistic effects between physical confinement of porous carbon and chemical interactions of SnS{sub 2}, S/C-SnS{sub 2} composites with different mass ratio of ultrathin SnS{sub 2} nanosheets and C show much improved electrochemical properties. Among them, S/C-SnS{sub 2} composite with 10 wt% of ultrathin SnS{sub 2} nanosheets and 75 wt% of sulfur maintains superior long term cycling capacities of 800 mAh g{sup −1} at 0.5 C after 300 cycles and 540 mAh g{sup −1} at 2 C after 700 cycles.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Chemical bath deposition of single crystal SnS nanobelts on glass substrates

Highlights: • Single crystal SnS nanobelts were deposited by CBD method. • The morphologies of SnS nanobelts were regulated by mole ratios of precursors and pH levels. • The photo-electrical properties of SnS nanobelts were characterized. - Abstract: SnS nanobelt thin films were deposited on glass substrates in acidic solution by chemical bath deposition (CBD) method. The belt-like morphologies of as-deposited SnS thin films were characterized by scanning electron microscope (SEM) and transmission electron microscopy (TEM). X-ray diffraction (XRD) and Raman measurements were carried out to confirm the crystal structures and phase purities of SnS nanobelt thin films. The morphologies and phase purities of SnS thin films were influenced greatly by the tin and sulfur precursors. The bandgaps of SnS nanobelts were determined to be 1.39–1.41 eV by UV–vis absorption and photoluminescence (PL) spectra. Current-voltage ((IV)) and current-time ((I-T)) characteristics were studied to demonstrate the photoelectric performances of SnS nanobelt thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Understanding Photovoltage Deficits in Electrochemically Grown Tin Sulfide (SnS) Thin-Film Photovoltaic Devices

Tin­(II) sulfide (SnS) is an earth-abundant semiconductor with a direct optical bandgap of ca. 1.1 eV, which makes it a promising absorber material for thin-film photovoltaic (PV) devices. However, existing devices have significant photovoltage deficits, which may be related to the anisotropic structure of the layered Herzenbergite SnS crystal structure. Here, we explore electrochemical deposition as a near room temperature path to oriented SnS crystal films on Mo and FTO substrates and employ vibrating Kelvin probe surface photovoltage (SPV) spectroscopy and J–V measurements to identify conversion losses in them. According to grazing-incidence X-ray diffraction and SEM, the SnS films consist of crystalline microplates with preferred orientation in the [111] and [001] directions. The bare SnS films produce only small and irreversible surface photovoltage signals, due charge trapping and recombination at the SnS surfaces, but addition of a CdS buffer layer lowers the charge recombination rate by 2 orders of magnitude and increases both the photovoltage and its reversibility due to the formation of a p-SnS/n-CdS junction. According to SPV, the FTO/SnS back interface (but not the Mo/SnS interface) forms a detrimental p–n junction that hinders hole transfer. Additional shunting through the relatively open microcrystal SnS layers and a lower conductivity of the FTO substrate explain the low power conversion efficiencies of the final devices (0.18 and 0.10% for the Mo and FTO substrates). Altogether, this work establishes a low-temperature path for the fabrication of crystalline SnS film-based solar cells and identifies the bottlenecks that limit high photoconversion efficiency.

deposition↗
DOE OSTI2025

Dimensional Reduction Guides Electronic Structure Evolution in the A n Cu 4–n SnS 4 Semiconductor Series

The search for new functional materials with tunable properties remains a central challenge in chemistry, particularly for applications in energy and electronics. In this work, we present a framework for predictive crystal design in alkali metal chalcogenides that enables controlled dimensional reduction of a parent covalent motif, yielding a broad range of electronic structures, which systematically evolve from one parent to the other. We present 11 new members of the A n Cu 4–n SnS 4 family (A = alkali metal; n = 0–4), which reduce the three-dimensional (3D) covalent network of Cu 4 SnS 4 into various 3D, 2D, 1D, and 0D [Cu 4–n SnS 4 ] n− motifs through the substitution of Cu with alkali metals of various radii. The end members of the family set the range in achievable band gaps at 0.99 eV for fully covalent Cu 4 SnS 4 (n = 0) and 3.38 eV for K 4 SnS 4 (n = 4) with 0D [SnS 4 ] n− tetrahedra. As the dimensionality of [Cu 4–n SnS 4 ] n− systematically reduces within A n Cu 4–n SnS 4 (n = 1–3), a stepwise increase in band gap energy occurs through a gradual decrease in the energy of the valence band maximum and an increase in the conduction band minimum, with an increase in the effective masses of charge carriers. Furthermore, irrespective of the alkali metal, the thermal stability decreases with decreasing [Cu 4–n SnS 4 ] n− dimensionality within the quaternary members. Most importantly, we demonstrate that predictable crystal structure and property evolution for a given composition space is possible by deriving a general formula based on substituting the covalent metals of a parent structure with alkali metals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Power conversion in SnS photocathodes made by electrochemical growth is limited by recombination at (002) buried facets

Herzenbergite α-SnS is a promising p-type semiconductor for photovoltaic and solar fuel applications, but current devices are plagued by substantial photovoltage losses. Here we use vibrating Kelvin probe surface photovoltage for the first time to study the recombination losses in microcrystalline SnS photoelectrodes. α-SnS films of varied crystal orientation, size, and shape are obtained by electrochemical growth from aqueous tin( II ) chloride and sodium thiosulfate solutions near room temperature. After application of a CdS passivation layer, the films function as photocathodes for the methylviologen reduction reaction. Photoelectrochemical and surface photovoltage measurements reveal that the performance of these devices is sensitively controlled by mainly the SnS crystal orientation and to a lesser extent by the grain size. For example, the highest charge recombination rates of 8.97 × 10 14 s −1 cm −2 and lowest photocurrent (0.73 mA cm −2 ) and lowest photovoltage (0.12 V) occur for SnS films containing 500 nm crystals with irregular shapes and SnS lattices tilted away from the (001) orientation. On the other hand, the best performance (1.62 mA cm −2 , 0.16 V, 3.32 × 10 12 s −1 cm −2 ) is seen for 1100 nm fully (001) oriented SnS nanoplates. Furthermore, these findings agree with improved charge carrier mobility in the 001 direction and they also show that charge recombination in SnS films occurs mainly at dangling Sn–S bonds at buried (002) facets. Such buried interfaces need to be suppressed for optimized solar energy conversion with SnS.

Najaf, Zainab [University of California, Davis, CA↗
DOE OSTI2021

Study of the crystal structure of SnS thin films by atomic layer deposition

Tin monosulfide, SnS, absorbs visible light and holds promise for thin-film photovoltaics. However, the optoelectronic properties of this material vary among the different structural phases, and control over the phase of vapor deposited SnS thin films is not well understood. In order to study the phases and crystallographic orientations of SnS films, films with thicknesses of 90 nm–750nm were prepared by atomic layer deposition (ALD) at temperatures between 80 °C and 200 °C on amorphous silicon dioxide (a-SiO2) and single-crystal sodium chloride (NaCl). We show that the crystal structures and orientations of the ALD-SnS thin films vary with deposition temperature, film thickness, and substrate. We confirm the presence of metastable cubic π-SnS in co-existence with the thermodynamically stable orthorhombic α-SnS and find that the π phase is more prevalent at lower deposition temperatures. The films grown on a-SiO2 are textured, the degree of texturing increases with lower temperature or higher thickness, and the deposited phase is also thickness dependent. Upon annealing, which is known to promote SnS grain growth, all films revert to orthorhombic α-SnS. The films grown on the NaCl(100) substrate exhibit a much higher degree of texturing and show different preferred orientations dependent on the phase: π-(400) and α-(111) or α-(040). In addition, we demonstrate a proof-of-concept device made from the highly oriented SnS grown on NaCl.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Annealing effect for SnS thin films prepared by high-vacuum evaporation

Thin films of SnS are deposited onto molybdenum-coated soda lime glass substrates using the high-vacuum evaporation technique at a substrate temperature of 300 °C. The as-deposited SnS layers are then annealed in three different media: (1) H{sub 2}S, (2) argon, and (3) vacuum, for different periods and temperatures to study the changes in the microstructural properties of the layers and to prepare single-phase SnS photoabsorber films. It is found that annealing the layers in H{sub 2}S at 400 °C changes the stoichiometry of the as-deposited SnS films and leads to the formation of a dominant SnS{sub 2} phase. Annealing in an argon atmosphere for 1 h, however, causes no deviations in the composition of the SnS films, though the surface morphology of the annealed SnS layers changes significantly as a result of a 2 h annealing process. The crystalline structure, surface morphology, and photosensitivity of the as-deposited SnS films improves significantly as the result of annealing in vacuum, and the vacuum-annealed films are found to exhibit promising properties for fabricating complete solar cells based on these single-phase SnS photoabsorber layers.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Cu{sub 2}Mn{sub 1-x}Co{sub x}SnS{sub 4}: Novel keesterite type solid solutions

A new family of Cu{sub 2}Mn{sub 1-x}Co{sub x}SnS{sub 4} chalcogenides has been synthesized by conventional solid-state reactions at 850 Degree-Sign C. The reactions products were characterized by powder X-ray diffraction (XRD), energy-dispersive X-ray analysis (SEM-EDS), Raman spectroscopy and magnetic susceptibility. The crystal structures of two members of the solid solution series Cu{sub 2}Mn{sub 0.4}Co{sub 0.6}SnS{sub 4} and Cu{sub 2}Mn{sub 0.2}Co{sub 0.8}SnS{sub 4} have been determined by single-crystal X-ray diffraction. Both phases crystallize in the tetragonal keesterite-type structure (space group I4{sup Macron }). The distortions of the tetrahedral volume of Cu{sub 2}Mn{sub 0.4}Co{sub 0.6}SnS{sub 4} and Cu{sub 2}Mn{sub 0.2}Co{sub 0.8}SnS{sub 4} were calculated and compared with the corresponding differences in the Cu{sub 2}MnSnS{sub 4} (stannite-type) end-member. The compounds show nearly the same Raman spectral features. Temperature-dependent magnetization measurements (ZFC/FC) and high-temperature susceptibility indicate that these solid solutions are antiferromagnetic. - Graphical abstract: View along [100] of the Cu{sub 2}Mn{sub 1-x}Co{sub x}SnS{sub 4} structure showing tetrahedral units and magnetic measurement ZFC-FC at 500 Oe. The insert shows the 1/{chi}-versus-temperature plot fitted by a Curie-Weiss law. Highlights: Black-Right-Pointing-Pointer Cu{sub 2}Mn{sub 1-x}Co{sub x}SnS{sub 4} solid solutions belong to the family of compounds adamantine. Black-Right-Pointing-Pointer Resolved single crystals of the solid solutions have space group I4{sup Macron }. Black-Right-Pointing-Pointer The distortion of the tetrahedral volume of Cu{sub 2}Mn{sub 1-x}Co{sub x}SnS{sub 4} were calculated. Black-Right-Pointing-Pointer These solid solutions are antiferromagnetic.

36 MATERIALS SCIENCE↗
DOE OSTI2018

A three-dimensional self-assembled SnS 2 -nano-dots@graphene hybrid aerogel as an efficient polysulfide reservoir for high-performance lithium–sulfur batteries

Reliable sulfur cathodes hold the key to realizing high-performance lithium–sulfur (Li–S) batteries, yet the electrochemical inefficiency and instability arising from the poor conductivity of sulfur and lithium sulfide together with polysulfide diffusion present challenges. We present here a new three-dimensional graphene aerogel embedded with in situ grown SnS 2 nano-dots (SnS 2 -ND@G) as an efficient sulfur host. First, benefiting from a highly conductive, hierarchically porous, and mechanically self-supported architecture, the SnS 2 -ND@G aerogel enables the cathode to hold high sulfur content (75 wt%) and loading (up to 10 mg cm –2 ). Both values exceed most of the reported metal-compound-related cathode work (<60 wt% sulfur content and <3 mg cm –2 sulfur loading) in the literature. Second, this work takes advantage of a facile one-pot self-assembly fabrication, effectively guaranteeing a homogeneous deposition of SnS 2 nano-dots in the graphene aerogel with a small amount of SnS 2 (16 wt%). It greatly overcomes the shortcomings of physical incorporation methods to make metal-compound/carbon substrates reported in previous studies. More importantly, by rationally combining the physical entrapment from graphene and chemical adsorptivity from SnS 2 nano-dots towards polysulfides, the SnS 2 -ND@G aerogel demonstrates remarkably improved polysulfide-trapping capability and electrochemical stability. As a result, a high peak capacity of 1234 mA h g –1 , a high reversible capacity of 1016 mA h g –1 after 300 cycles, exceptional rate capability (C/10 – 3C rates), and impressive areal capacity (up to 11 mA h cm –2 ) are achieved. Furthermore, this work provides a viable path to integrate a conductive graphene network and nano-sized SnS 2 as a promising cathode substrate for developing advanced Li–S batteries.

25 ENERGY STORAGE↗
DOE OSTI2015

Complexations of Ln(III) with SnS{sub 4}H and Sn{sub 2}S{sub 6}: Solvothermal syntheses and characterizations of lanthanide coordination polymers with thiostannate and polyamine mixed ligands

Polymeric lanthanide complexes with thiostannate and polyamine mixed ligands, [Ln(peha)(μ–SnS{sub 4}H)]{sub n} [Ln=La (1a), Nd (1b)] and [(Ln(tepa)(μ–OH)){sub 2}(μ–Sn{sub 2}S{sub 6})]{sub n}nH{sub 2}O [Ln=Nd (2a), Sm (2b), Gd (2c), Dy (2d)] (peha=pentaethylenehexamine, tepa=tetraethylenepentamine) were respectively prepared in peha and tepa coordinative solvents by the solvothermal methods. In 1a and 1b, the Ln{sup 3+} ions are coordinated by a hexadentate peha ligand forming [Ln(peha)]{sup 3+} units. The [SnS{sub 4}H]{sup 3−} anion chelates a [Ln(peha)]{sup 3+} unit via two S atoms and coordinates to another [Ln(peha)]{sup 3+} unit via the third S atom. As a result, the [Ln(peha)]{sup 3+} units are connected into coordination polymers [Ln(peha)(μ–SnS{sub 4}H)]{sub n} by an unprecedented tridentate μ–η{sup 1},η{sup 2}–SnS{sub 4}H bridging ligands. In 2a–2d, the Ln{sup 3+} ions are coordinated by a pentadentate tepa ligand, and two [Ln(tepa)]{sup 3+} units are joined by two μ–OH bridges to form a binuclear [(Ln(tepa)(μ–OH)){sub 2}]{sup 4+} unit. Behaving as a bidentate μ–η{sup 1}, η{sup 1}–Sn{sub 2}S{sub 6} bridging ligand, the Sn{sub 2}S{sub 6} unit connects [(Ln(tepa)(μ–OH)){sub 2}]{sup 4+} units into a neutral coordination polymer [(Ln(tepa)(μ–OH)){sub 2}(μ–Sn{sub 2}S{sub 6})]{sub n} via the trans S atoms. The Ln{sup 3+} ions are in distorted monocapped square antiprismatic and bicapped trigonal prismatic environments in [(Ln(peha)(μ–SnS{sub 4}H)]{sub n} and [(Ln(tepa)(μ–OH)){sub 2}(μ–Sn{sub 2}S{sub 6})]{sub n}, respectively. The denticities of ethylene polyamine play an important role on the formation and complexation of the thiostannate in the presence of lanthanide ions. Compounds 1a–2d show well-defined absorption edges with band gaps between 2.81 and 3.15 eV. - Graphical abstract: Lanthanide coordination polymers concerning thiostannate ligands were prepared by the solvothermal methods, and μ{sub 3}–SnS{sub 4}H and μ–Sn{sub 2}S{sub 6} ligands to Ln(III) centers were obtained. - Highlights: • Lanthanide coordination polymers were prepared in polyamines with higher denticity. • The μ–η{sup 1},η{sup 2}–SnS{sub 4}H and μ–η{sup 1},η{sup 1}–Sn{sub 2}S{sub 6} ligands to Ln(III) centers were obtained. • Effect of amine on the complexation of Ln(III) with thiostannate is observed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

van der Waals Epitaxy, Superlubricity, and Polarization of the 2D Ferroelectric SnS

Tin monosulfide (SnS) is a two-dimensional layered semiconductor that exhibits in-plane ferroelectric order at very small thicknesses and is of interest in highly scaled devices. Here, in this study, we report the epitaxial growth of SnS on hexagonal boron nitride (hBN) using a pulsed metal-organic chemical vapor deposition process. Lattice matching is observed between the SnS($100$) and hBN{$1\bar{10}$} planes, with no evidence of strain. Atomic force microscopy reveals superlubricity along the commensurate direction of the SnS/hBN interface, and first-principles calculations suggest that friction is controlled by the edges of the SnS islands, rather than interface interactions. Differential phase contrast imaging detects remnant polarization in SnS islands with domains that are not dictated by step-edges in the SnS. The growth of ferroelectric SnS on high quality hBN substrates is a promising step toward electrically switchable ferroelectric semiconducting devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Waste Management Analyses for Spent Structures at SNS - Paper 106

The Spallation Neutron Source (SNS) in Oak Ridge, Tennessee, is an accelerator driven neutron scattering facility for materials research. Presently, the SNS operates at 1.2 megawatt (MW) proton beam power incident on a mercury target with a proton beam energy of 1 GeV and 60 Hz repetition rate. The SNS consists of an accelerator facility, target facility, and a world-class suite of neutron scattering instruments supporting material, life-science and fundamental physics research. According to the SNS operations plan, some components are replaced when they reach their end-of-life due to radiation induced material damage or burn-up, or because of mechanical failure. During operation, these components, especially those in proximity to the target, are exposed to a radiation environment and build up significant activity during their service lifetime. All these components must be safely removed, placed in a container/package for storage, and ultimately transported offsite for disposal. An accurate estimate of the radionuclide inventory is performed assuming realistic irradiation history and decay time in order to classify a spent component. On the basis of a calculated radionuclide inventory, the spent component is classified, and an appropriate cask/package for transport and storage is suggested. After the choice for the container is made, radiation transport calculations are performed for the facility component placed inside the container, to ensure that the container is compliant with waste management regulations. When necessary, additional shielding is added. For each spent component before it goes out of the SNS site, supporting documentation is produced with a radionuclide inventory prediction, dose rate analyses and, if required, additional shielding. A dose rate analyses for the exposure prediction of personnel during components change out are performed as well. Most of the effort is concentrated on the target facility components such as target, proton beam window (PBW) and core vessel insert (CVI) plugs because of severe radiation conditions. Additionally, analyses are performed for the accelerator facility components, which are removed from the facility. Activation analyses and residual dose rates analyses are performed to support safe handling of SNS spent components at the SNS site and during transport to the waste disposal site. On the basis of the calculated radionuclide inventories, spent components characterized and classified with respect to waste management guidelines, and activity-based determinations are made regarding appropriate packaging for transport. (authors)

61 RADIATION PROTECTION AND DOSIMETRY↗
DOE OSTI2012

Improved Moderator Performance Calculations at SNS

The Spallation Neutron Source (SNS) at Oak Ridge National Laboratory reached a nominal operating power of 1 MW in September, 2009. Even at ~2/3 of its designed capacity, SNS already becomes the brightest pulsed neutron source in the world, and a premier facility for material and life science research. To provide accurate target performance estimation and to meet future development needs, we had developed an as-built model for the operating target system of SNS. Based on this asbuilt model, the moderator performance at SNS was recalculated taking advantage of the improved physics and tallying method in the Monte Carlo simulation code, MCNPX, and most recent scattering kernels. The neutron flux intensity spectra, emission time distributions of neutron pulses and moderator brightness profiles regarding the SNS moderator performance are presented and discussed. Compared to the previous results, the current calculations show ~10-20% lower in flux with improved emission time distributions of neutron pulses. The difference between the two data sets is analyzed, as well as other factors impacting the moderator performance at SNS. The current calculation results will serve as source terms for the instrument performance simulations at SNS.

Lu, Wei↗
DOE OSTI2023

C@SnS 2 core-shell 0D/2D nanocomposite with excellent electrochemical performance as lithium-ion battery anode

C@SnS 2 core-shell 0D/2D nanocomposite was successfully prepared by a one-step hydrothermal method. The SnS 2 nanosheets were heterogeneously nucleated and grown on the surface of carbon spheres. As an anode for lithium-ion batteries, the electrochemical performance of the C@SnS 2 composite outperforms that of SnS 2 nanoflowers. After 100 cycles, the reversible discharge specific capacity reaches an impressive value of 802 mAh g -1 at a current density of 100 mA g -1 . Even after 600 cycles, the discharge specific capacity remains a value of 442 mAh g -1 , under a high current density of 1 A g -1 . Further, this remarkable lithium-ion storage performance can be attributed to the unique core-shell nanostructure and the synergy between SnS 2 nanosheets and carbon spheres. This study advances our understanding of the vital role of carbon in fabricating nano-heterojunction or composite electrodes and provides a feasible route to significantly improve the electrochemical properties of SnS 2 and other metal sulfides.

25 ENERGY STORAGE↗