Chemical analysis of surfaces using alpha particles.
Chemical analysis of surfaces using alpha-particle interactions from curium 242 sources and semiconductor silicon detectors
ALPHA RADIATION↗
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Results for “SILICON RADIATION DETECTOR”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Use of the si super a /n, alpha/ mg super a-3 and si super a /n, p/ al super a-1 reactions in a semiconductor diode for measuring neutron spectra.
Neutron spectra calculations from pulse height due to neutron interactions with protons and alpha particles in silicon charged particle detector
PARTICLE DETECTOR↗
Heavy-particle studies with silicon detectors
Response of lithium-drifted silicon detectors for radiobiologic applications
SILICON RADIATION DETECTOR↗
Radiation Response of Emerging High Gain, Low Noise Detectors
Data illustrating the radiation response of emerging high gain, low noise detectors are presented. Ionizing dose testing of silicon internal discrete avalanche photodiodes, and 51-MeV proton testing of InGaAs/InAlAs avalanche photodiodes operated in Geiger mode are discussed.
avalanche photodiodes↗
Some instrumentation problems in the vacuum ultraviolet below 1000 angstrom units.
Well shielded ceramic capillary spark source, thermocouple radiation detector and silicon p-n junction diode testing
LIGHT SOURCE↗
Fluctuations of energy loss by heavy charged particles in silicon detectors - Preliminary measurements.
Thick lithium drifted semiconductor silicon detectors for investigation of fluctuations of energy loss by high and intermediate energy particles
PARTICLE DETECTOR↗
Superconducting magnet beta-ray spectrometer.
Superconducting magnet spectrometer using lithium drifted silicon detectors for measurement of electron spectra
SPECTROMETER↗
A solid state beta gauge for measuring the density of liquid hydrogen.
Silicon surface barrier detector beta gauge for density measurements in liquid hydrogen
SILICON RADIATION DETECTOR↗
Heavy-particle studies with silicon detectors.
Response of lithium-drifted silicon detectors to high energy alpha and proton beam and radiobiologic application
PROTONS↗
Biology and Medicine, Spring 1965 Semiannual report
Reports on radiobiology studies, pion studies with silicon detectors, immunology, ultracentrifuge rotor temperature and speed measurement by radio telemetry, and radiosensitivity investigations
RADIOBIOLOGY↗
Fabrication methods for lithium drifted surface barrier silicon detectors.
Fabrication methods for lithium drifted surface barrier silicon detectors, discussing lithium diffusion, stain etching, preparation for and final etch
LITHIUM↗
Pion studies with silicon detectors.
Most probable energy loss in silicon for pions with energies from 365 to 50 mev, examining pion beam behavior through different absorption material thicknesses
MUON↗
Pixel-Strip Module Testing and Performance Analysis for the CMS Phase-2 Outer Tracker Upgrade
In response to the demanding environment of the High-Luminosity Large Hadron Collider (HL-LHC), the Compact Muon Solenoid (CMS) Experiment's Outer Tracker is being replaced with a lighter, higher-granularity, radiation-tolerant silicon detector capable of providing tracking information directly to the Level-1 trigger system. The new Outer Tracker consists of Pixel-Strip (PS) and Strip-Strip (2S) transverse momentum (pT) modules, which are assembled and tested at, among other centers, Fermilab's Silicon Detector Facility. PS modules consist of a pixel sensor, a strip sensor, and multiple application-specific integrated circuits (ASICs). This poster studies the performance of MaPSAs, silicon macro-pixel sensors bump-bonded to 16 macro-pixel ASICS. It presents the testing procedures for MaPSAs and MaPSA-strip sensor sub-assemblies, as well as the results of calibration and performance studies of two PS modules before and after irradiation. These results assess the impact of irradiation on module performance, providing insight into the modules' expected performance in the HL-LHC environment.
Kimrey, Emerson [Scripps College]↗
Silicon surface damage due to gamma radiation.
Silicon surface damage, discussing low energy gamma irradiation effect on bulk lifetime and recombination velocity
GAMMA RADIATION↗
Methods of measurement for semiconductor materials, process control, and devices
Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.
Bullis, W. M.↗
Silicon surface barrier detectors used for liquid hydrogen density measurement
Multichannel system employing a radioisotope radiation source, strontium-90, radiation detector, and a silicon surface barrier detector, measures the local density of liquid hydrogen at various levels in a storage tank. The instrument contains electronic equipment for collecting the density information, and a data handling system for processing this information.
James, D. T.↗
Synchrotron-based Characterization Techniques for Radiation Detection Materials and Devices: An Overview
High-performance room-temperature radiation detectors (high energy resolution for spectrometers, high spatial resolution for imaging devices, and low defect-density for high flux applications) are needed for photon energies (>20 keV) that are not well suited for silicon detectors. Applications for such radiation detectors include nonproliferation, synchrotron, medical, astrophysics, and homeland security. Material- and device- characterization to understand and solve the limiting factors of radiation detection materials and devices is a core element of a radiation detector development R&D program. This presentation will give an overview on the two main synchrotron-based characterization techniques that have been employed by the authors in the last ~20 years: (1) White Beam X-ray Diffraction Topography and (2) Micron-scale detector mapping. A perfect (one domain) crystal (radiation detection material) is a requirement to achieve a highperformance radiation detector. White Beam X-ray Diffraction Topography (WBXDT) allows the rapid screening of the crystallinity of the detector material. With WBXDT we can quickly screen CZT and other crystals to make sure they have only one domain, and to see the presence of extended defects and strain fields.
Camarda, Giuseppe S.↗