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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Bose-Einstein correlations in Si + Al and Si + Au collisions at 14.6A GeV/c

The E802 Spectrometer at the Brookhaven Alternating Gradient Synchrotron has been used to measure the correlation in relative momentum between like-sign pions emitted in central Si + Al and Si + Au collisions at 14.6A GeV/c. Data are presented in terms of the correlation function for both identified pi(-) and pi(+) pairs near the nucleon-nucleon center-of-mass rapidity. All parametrizations of the correlation function are consistent with a spherically symmetric source of rms radius 3.5 +/- 0.4 fm and lifetime fm/c.

Abbott, T.↗
NASA NTRS1994

Pourous Si(x)Ge(1-x) Layers Within Single Crystals Of Si

Layers of porous Si(x)Ge(1-x) buried within single crystals of Si formed by epitaxial growth of Si/Si(x)Ge(1-x)/Si structures followed by etching in solutions of HF:HNO3:H2O. Electroluminescence from these layers utilized in novel optoelectronic devices.

Fathauer, Robert W.↗
NASA NTRS1993

An investigation on the rheological behavior of metallic semi-solid slurries of Al-6.5 pct Si and semi-solid composite slurries of SiC particulates in an Al-6.5 pct Si alloy matrix

The rheology of SiC particulate/Al-6.5 pct Si composite slurries was explored. The rheological behavior of the composite slurries shows both thixotropic and pseudoplastic behaviors. Isostructural experiments on the composite slurries revealed a Newtonian behavior beyond a high shear rate limit. The rheology of fully molten composite slurries over the low to high shear rate range indicates the existence of a low shear rate Newtonian region, an intermediate pseudoplastic region and a high shear rate Newtonian region. The isostructural studies indicate that the viscosity of a composite slurry depends upon the shearing history of a given volume of material. An unexpected shear thinning was noted for SiC particulate + alpha slurries as compared to semi-solid metallic slurries at the same fraction solid. The implications of these findings for the processing of slurries into cast components is discussed.

Moon, H.-K.↗
NASA NTRS1989

Laboratory characterization of direct readout Si:Sb and Si:Ga infrared detector arrays

Highlights of recent results obtained at Ames Research Center in performance evaluations of infrared detector arrays are presented. Antimony- and gallium-doped silicon direct readout 58x62 element hybrid devices from Ames' ongoing detector technology development program are described. The observed characteristics meet most of the performance goals specified by the Space Infrared Telescope Facility (SIRTF) instrument teams and compare favorably with the best performance reported for discrete non-integrating extrinsic silicon detectors. Initial results of radiation environment testing are reported, and non-ideal behavior demonstrated by these test devices is discussed.

Mckelvey, Mark E.↗
NASA NTRS1987

The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

X-ray photoemission spectroscopy has been used to examine the localization and crystallographic dependence of Si(+), Si(2+), and Si(3+) suboxide states at the SiO2/Si interface for (100)and (111)-oriented substrates with gate oxide quality thermal oxides. The Si(+) and Si(2+) states are localized within 6-10 A of the interface while the Si(3+) state extends about 30 A into the bulk SiO2. The distribution of Si(+) and Si(2+) states shows a strong crystallographic dependence with Si(2+) dominating on (100) substrates and Si(+) dominating on (111) substrates. This crystallographic dependence is anticipated from consideration of ideal unreconstructed (100) and (111) Si surfaces, suggesting that (1) the Si(+) and Si(2+) states are localized immediately within the first monolayer at the interface and (2) the first few monolayers of substrate Si atoms are not significantly displaced from the bulk. The total number of suboxide states observed at the SiO2/Si interface corresponds to 94 and 83 percent of a monolayer for these (100) and (111) substrates, respectively.

Grunthaner, P. J.↗
NASA NTRS1990

Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures

Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.

Hauenstein, Robert J.↗
NASA NTRS2007

Toward a III-V Multijunction Space Cell Technology on Si

High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red laser diodes on Si.9 Here we report on the first high performance dual junction GaInP/GaAs solar cells grown on Si using this promising SiGe engineered substrate approach.

Ringel, S. A.↗
NASA NTRSDate not supplied

Investigating Si Bonding Environments in Mercurian Melts

Mercury’s low oxygen fugacity results in lavas with extraordinarily high sulfur contents (> 1 wt%). The high S lowers melt viscosity, but why this occurs is unclear (Mouser et al., 2021). The detection of Si-S bonds (using NMR) in such highly reduced basaltic glasses, suggest that the decreased viscosity is due to changes in the Si bonding environment (Pommier et al., 2023). To investigate further, we synthesized a series of Mercurian glasses at 1 GPa, with S contents ranging from 0-6 wt% and oxygen fugacities from IW-4 to IW-6. The experimental glasses were analyzed by Si K-edge X-ray Absorption Near Edge Structure (XANES) spectroscopy and 29Si Nuclear Magnetic Resonance (NMR). Ongoing analyses will include Raman and Fourier Transform Infrared (FTIR). The 29Si NMR analyses suggest the presence of Si-S bonds in the melts, in agreement with Pommier et al. (2023). The Si K-edge XANES spectra show a decrease in K-edge position of 0.4 to 0.6 eV from terrestrial basalts (at ~IW+3) to the experimental melts at IW-4 to IW-6. This shift suggests a moderate (<20 mole %) amount of Si has shifted to lower valence states (Boujibar et al, 2019). The melts contain 0-6 wt% S, so if the K-edge shifts are the results of Si-S bonding, it implies that the majority of the S in the melts is bonded to Si. However, S K-edge XANES analyses indicate that much of the S is also bonded with Mg and Ca at these low oxygen fugacities (Anzures et al, 2020). The implication is that non-bridging Si-S-(Mg,Ca) bonds are prevalent in the reduced melts, consistent with the decrease in viscosity of the melts being due to melt depolymerization. Overall, our results suggest that dissolution of S into the melts at low fO2 is accomplished through bonding with Si, and is accompanied by significant structural changes that lower melt viscosity. Lower melt viscosities will affect many aspects of Mercury’s evolution, from magma ocean dynamics, to melt migration in the mantle, to eruption dynamics and degassing.

Emily L Fischer↗
NASA NTRS1985

Electrical, structural and chemical characterization of Si sheet material

Web Dendritic Si ribbons are deformed under a well-defined four point bending stress. Since the mechanical properties of Si are known to depend on the 0 content of the material, 0 measurements using Fourier Transform Infrared Spectroscopy were done to determine a proper control sample of non-defected single crystal Si. Four point bending revealed a unique two step bending behavior for the Web Si ribbons. An initial theory for this behavior involves the interaction of the dislocations generated by the deformation with the central twin planes of the ribbons. Measurements showed a uniformly high 0 content for the Web Si ribbons, approximately 10 to the 18th power atoms/cu.cm. The Web samples had a much broader absorption peak at 9 microns than is usually seen for well-annealed single crystal Si. This broadening is thought to be related to stress in the Web Si ribbons. Two samples containing a known amount of residual stress support this hypothesis. Also, a shoulder on the infrared absorption peak associated with interstitial 0 in Si appears in the transmission vs. wavenumber plots for some of the Web samples. This shoulder has been associated with 0-vacancy complexes or with 0 at dislocations. The O content and configuration do not seem to correlate with the growth configuration of the Web Si ribbon.

Ast, D. G.↗
NASA NTRS1988

Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

Mii, Y. J.↗
NASA NTRS1990

The effect of Sr and Bi on the Si(100) surface oxidation - Auger electron spectroscopy, low energy electron diffraction, and X-ray photoelectron spectroscopy study

The effect of Sr and Bi on the oxidation of the Si(100) surface has been studied by Auger electron spectroscopy, low electron diffraction, and X-ray photoelectron spectroscopy. A dramatic enhancement, by a factor of 10, of the Si oxidation has been observed for Si(100) with a Sr overlayer. The SR-enhanced Si oxidation has been studied as a function of O2 exposure and Sr coverage. In contrast to the oxidation promotion of Sr on Si, it has been also observed that a Bi overlayer on Si(100) reduced Si oxidation significantly. Sr adsorption on the Si(100) with a Bi overlayer enhances Si oxidation only at Sr coverage of greater than 0.3 ML.

Fan, W. C.↗