Capacitor screening evaluation test program Final report
Test program to evaluate screening effects on fixed ceramic dielectric low voltage capacitors from failure and parameter degradation data
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Test program to evaluate screening effects on fixed ceramic dielectric low voltage capacitors from failure and parameter degradation data
Effective screening techniques are evaluated for detecting insulation resistance degradation and failure in hermetically sealed metallized film capacitors used in applications where low capacitor voltage and energy levels are common to the circuitry. A special test and monitoring system capable of rapidly scanning all test capacitors and recording faults and/or failures is examined. Tests include temperature cycling and storage as well as low, medium, and high voltage life tests. Polysulfone film capacitors are more heat stable and reliable than polycarbonate film units.
A model free energy is developed for hydrogen-helium mixtures based on solid-state Thomas-Fermi-Dirac calculations at pressures relevant to the interiors of giant planets. Using a model potential similar to that for a two-component plasma, effective charges for the nuclei (which are in general smaller than the actual charges because of screening effects) are parameterized, being constrained by calculations at a number of densities, compositions, and lattice structures. These model potentials are then used to compute the equilibrium properties of H-He fluids using a charged hard-sphere model. The results find critical temperatures of about 0 K, 500 K, and 1500 K, for pressures of 10, 100, and 1000 Mbar, respectively. These phase separation temperatures are considerably lower (approximately 6,000-10,000 K) than those found from calculations using free electron perturbation theory, and suggest that H-He solutions should be stable against phase separation in the metallic zones of Jupiter and Saturn.
Numerical solutions have been obtained for the one-dimensional atmospheric electromagnetic cascade diffusion equations, including the Landau-Pomeranchuk-Migdal and screening effects. Spectra produced by primary gamma rays of various energies are given at a number of deths in the atmosphere.
Ozone decrease implies more ultraviolet-B (UV-B) radiation reaching the surface of the Earth. Increased UV-B radiation triggers responses by living organisms. Despite the large potential impacts on vegetation, little is known about UV-B effects on terrestrial ecosystems. Long-term ecological studies are needed to quantify the effects of increased UV radiation on terrestrial ecosystems, asses the risks, and produce reliable data for prediction. Screening pigments are part of one of the protective mechanism in plants. Higher concentrations of screening pigments in leaves may be interpreted as a response to increased UV radiation. If the screening effect is not sufficient, important molecules will be disturbed by incoming radiation. Thus, genetics, photosynthesis, growth, plant and leaf shape and size, and pollen grains may be affected. This will have an impact on ecosystem dynamics, structure and productivity. It is necessary to monitor selected terrestrial ecosystems to permit detection and interpretation of changes attributable to global climate change and depleted ozone shield. The objectives of this project are: (1) To identify and measure indicators of the effects of increased solar UV-B radiation on terrestrial plants; (2) to select indicators with the greatest responses to UV-B exposure; (3) to test, adapt or create ecosystem models that use the information gathered by this project for prediction and to enhance our understanding of the effects of increased UV-B radiation on terrestrial ecosystems. As a first step to achieve these objectives we propose a three-year study of forest and steppe vegetation on the North slope of the Brooks Range (within the Arctic circle, in Alaska), in the Saguaro National Monument (near Tucson, Arizona) and in the forests and steppes of Patagonia (Argentina). We selected (1) vegetation north of the Polar Circle because at 70N there is 8% risk of plant damage due to increased UV-B radiation; (2) the foothills of Catalina Mountains because there is anecdotal evidence of plant damage on the saguaros that has been linked to increased UV radiation, and (3) the forests of Nothofagus spp. and the steppe of Patagonia where the risk of plant damage at 35S is 5% and increases to as much as 15% at 55S due to increased UV-B radiation. Measurements of UV-B radiation impinging on the surface at 55S largely exceed the predicted UV-B radiation values at 50 latitude and 0% ozone depletion. Preliminary HPLC analyses of UV-B absorbing compounds in Nothofagus antartica, N. pumilio, N. betuloides and Rumex sp. in natural conditions show species-specific patterns. The spectrum of N. antartica grown at 38S differs significantly from that of N. antartica in natural conditions in Ushuaia (55S). These results suggest that the selected main area (Patagonia) is appropriate for assessing the problem and its magnitude and that Nothofagus is appropriate for our study.
This paper presents results of work conducted to expand the technology base and evolve practical propellant surface tension acquisition system designs for future cryogenic space vehicles. Surface tension screen device channel flow analysis and supporting tests showed that reasonable mesh sizes could provide the required retention performance. Integrated subsystem studies and development showed that practical and effective screen surface tension acquisition devices could be designed for typical applications, but that other interfacing feed subsystems are often constrained by the design of the particular acquisition device. These constraints may dominate the total feed system performance.
The Kosterlitz-Thouless-Halperin-Nelson-Young theory of melting is applied to a two-dimensional charged colloidal crystal. The renormalization of elastic constants due to anharmonic and dislocation pair-screening effects is calculated. For colloidal spheres ('polyballs') suspended in a thin film of water confined between two glass plates whose surfaces are highly charged, as in recent experimental configurations, the corrections to the harmonic results simply require an altered effective polyball charge to reproduce virtually the identical melting curve of the harmonic approximation (which agrees well with experiment). The effect on the melting curve of added salt is also calculated; the corresponding experiments have yet to be performed. For a film between uncharged surfaces the anharmonic correction again softens the lattice significantly. Dislocation pair screening causes an additional but minor reduction of the elastic constants. Neither correction eliminates a nonmelting behavior characteristic of the two-dimensional screened Coulomb system in this configuration.
Simultaneous observations by identical ionization chambers aboard the satellites OGO-1 and OGO-3 are utilized to investigate spatial variations in particle intensity near and inside the magnetosphere during the solar cosmic ray events of September 1966. Cross-correlation of the absolute proton flux computed from the chamber rate during three solar particle events shows good agreement with the measurements by the IMP-F Solar Proton Monitor during the same events. The chamber has a dynamic range of over six orders of magnitude. Before launch it was calibrated in the laboratory with radiation dosages in the range 1 R/hr-6000 R/hr. The OGO-1 and OGO-3 chambers, which were normalized in the laboratory prior to the launch, are found to maintain their normalization within approximately equal to 1 per cent during their flight. The high sensitivity and absolute inter-comparability of the instruments allow small intensity differences to be detected and it is established that the observed differences can be explained by a magnetospheric screening effect when an anisotropic beam of particles is present in space. Evidence is presented to show that the screening is at times complete for a duration of as much as 110 min in the tail of the magnetosphere so that during this period the solar cosmic rays (E approximately equal to 15 MeV) have virtually no access to that region of the magnetosphere. Small intensity fluctuations of a temporal nature observed and found to be subjected to a damping effect inside the magnetosphere.
A detailed three-dimensional (3-D) statistical 'atomistic' simulation study of fluctuation-resistant sub-0.1-(micron)meter MOSFET architectures with epitaxial channels and delta doping is presented. The need for enhancing the fluctuation resistance of the sub-0.1-(micron)meter generation transistors is highlighted by presenting summarized results from atomistic simulations of a wide range of conventional devices with uniformly doped channel. According to our atomistic results, the doping concentration dependence of the random dopant-induced threshold voltage fluctuations in conventional devices is stronger than the analytically predicted fourth-root dependence. As a result of this, the scaling of such devices will be restricted by the "intrinsic" random dopant-induced fluctuations earlier than anticipated. Our atomistic simulations confirm that the introduction of a thin epitaxial layer in the MOSFET's channel can efficiently suppress the random dopant-induced threshold voltage fluctuations in sub-0.1-(micron)meter devices. For the first time, we observe an "anomalous" reduction in the threshold voltage fluctuations with an increase in the doping concentration behind the epitaxial channel, which we attribute to screening effects. Also, for the first time we study the effect of a delta-doping, positioned behind the epitaxial layer, on the intrinsic threshold voltage fluctuations. Above a certain thickness of epitaxial layer, we observe a pronounced anomalous decrease in the threshold voltage fluctuation with the increase of the delta doping. This phenomenon, which is also associated with screening, enhances the importance of the delta doping in the design of properly scaled fluctuation-resistant sub-0.1-(micron)meter MOSFET's. Index Terms-Doping, fluctuations, MOSFET, semiconductor device simulation, silicon devices, threshold.
Several experimental studies have been reported as evidence of Josephson coupling between the superconducting layers in the highly anisotropic oxide such as the Bi2Sr2CaCu2O8 and Tl2Ba2CuO6 systems. These include the large penetration depth of 100 mu m measured, ac and dc Josephson effects. Recently two critical temperatures corresponding to Josephson coupling in between the layers and the Berezinskii-Kosterlitz-Thouless transition in the ab-plane have been directly observed in the transport measurements. If the field is applied parallel to the superconducting layers, the magnetic excitation is not the conventional Abrikosov vortices, but the Josephson vortices which extend lambda(sub ab) in the c-axis direction and lambda(sub J) = gamma s in the plane (s is the interlayer distance, gamma is the anisotropy constant). Because of the weak screening effect associated with the Josephson vortices, there have been predictions of magnetic transparent states at magnetic field above a characteristic field H(sub J), a behavior distinctively different from that of the type-II superconductors. In this paper, we report an experimental result which illustrates a transition from the Meissner state to the magnetic transparent state in single crystal of Nd(1.85)Ce(0.15)CuO(4-y). Magnetization has been measured as a function of temperature and field in the magnetic field parallel or close to ab-plane geometry. For a fixed magnetic field, the magnetization shows a two-step transition in M(T); for a fixed temperature, the magnetization shows an abrupt change to almost zero value above a characteristic field H(sub J), an indication of magnetic transparent state. The data of magnetization as a function of field clearly deviates from the behavior predicted by the Abrikosov theory for type-II superconductors. Instead, the data fit well into the picture of Josephson decoupling between the CuO2 layers.
A procedure to effectively screen and evaluate resins for aerospace structures and advanced composites is described. The following conclusions were advanced: (1) laminate damage tolerance correlates positively with neat resin G sub IC; (2) TGDDM/DDS resins can be toughened; (3) using butadiene-nitrile rubbers, neat resin G sub IC and ultimate strain increase with increasing nitrile content, with the number of chemically reactive groups per molecule, and with increasing molecular weight; (4) better balance of properties combined with high G sub IC may be achieved by using tough glassy thermoplastics instead of rubbers to modify TGDDM/DDS resins; (5) both toughening mechanisms require good phase separation with an effective interphase; (6) the kind and the amount of thermoplastic modifier remain to be selected; and (7) presently only about a fourfold increase in G sub IC was achieved, whereas a forty fold increase is sought; modification of the matrix backbone and of crosslinking is required.
Spatial variations in particle intensity near and inside magnetosphere during September 1966 solar cosmic ray events, noting magnetosphere screening effectiveness
Atomic oxygen is the predominant species in low-Earth orbit between the altitudes of 180 and 650 km. These highly reactive atoms are a result of photodissociation of diatomic oxygen molecules from solar photons having a wavelength less than or equal to 2430A. Spacecraft in low-Earth orbit collide with atomic oxygen in the 3P ground state at impact energies of approximately 4.2 to 4.5 eV. As a consequence, organic materials previously used for high altitude geosynchronous spacecraft are severely oxidized in the low-Earth orbital environment. The evaluation of materials durability to atomic oxygen requires ground simulation of this environment to cost effectively screen materials for durability. Directed broad beam oxygen sources are necessary to evaluate potential spacecraft materials performance before and after exposure to the simulated low-Earth orbital environment. This paper presents a description of a low energy, broad oxygen ion beam source used to simulate the low-Earth orbital atomic oxygen environment. The results of materials interaction with this beam and comparison with actual in-space tests of the same meterials will be discussed. Resulting surface morphologies appear to closely replicate those observed in space tests.
A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.
Multi-walled nanotubes are proposed as a method to electrically and physically isolate nanoscale conductors from their surroundings. We use tight binding (TB) and density functional theory (DFT) to simulate the effects of an external electric field on multi-wall nanotubes. Two categories of multi-wall nanotube are investigated, those with metallic and semiconducting outer shells. In the metallic case, simulations show that the outer wall effectively screens the inner core from an applied electric field. This offers the ability to reduce crosstalk between nanotube conductors. A semiconducting outer shell is found not to perturb an electric field incident on the inner core, thereby providing physical isolation while allowing the tube to remain electrically coupled to its surroundings.
The ISS (International Space Station) ITCS (Internal Thermal Control System) includes two internal coolant loops that utilize an aqueous based coolant for heat transfer. A silver salt biocide had previously been utilized as an additive in the coolant formulation to control the growth and proliferation of microorganisms within the coolant loops. Ground-based and in-flight testing demonstrated that the silver salt was rapidly depleted, and did not act as an effective long-term biocide. Efforts to select an optimal alternate biocide for the ITCS coolant application have been underway and are now in the final stages. An extensive evaluation of biocides was conducted to down-select to several candidates for test trials and was reported on previously. Criteria for that down-select included: the need for safe, non-intrusive implementation and operation in a functioning system; the ability to control existing planktonic and biofilm residing microorganisms; a negligible impact on system-wetted materials of construction; and a negligible reactivity with existing coolant additives. Candidate testing to provide data for the selection of an optimal alternate biocide is now in the final stages. That testing has included rapid biocide effectiveness screening using Biolog MT2 plates to determine minimum inhibitory concentration (amount that will inhibit visible growth of microorganisms), time kill studies to determine the exposure time required to completely eliminate organism growth, materials compatibility exposure evaluations, coolant compatibility studies, and bench-top simulated coolant testing. This paper reports the current status of the effort to select an alternate biocide for the ISS ITCS coolant. The results of various test results to select the optimal candidate are presented.
This design constitutes a self-resetting (gain quenching), room-temperature operational semiconductor single-photon-sensitive detector that is sensitive to telecommunications optical wavelengths and is scalable to large areas (millimeter diameter) with high bandwidth and efficiencies. The device can detect single photons at a 1,550-nm wavelength at a gain of 1 x 10(exp 6). Unlike conventional single photon avalanche detectors (SPADs), where gain is an extremely sensitive function to the bias voltage, the multiplication gain of this device is stable at 1 x 10(exp 6) over a wide range of bias from 30.2 to 30.9 V. Here, the multiplication gain is defined as the total number of charge carriers contained in one output pulse that is triggered by the absorption of a single photon. The statistics of magnitude of output signals also shows that the device has a very narrow pulse height distribution, which demonstrates a greatly suppressed gain fluctuation. From the histograms of both pulse height and pulse charge, the equivalent gain variance (excess noise) is between 1.001 and 1.007 at a gain of 1 x 10(exp 6). With these advantages, the device holds promise to function as a PMT-like photon counter at a 1,550- nm wavelength. The epitaxial layer structure of the device allows photons to be absorbed in the InGaAs layer, generating electron/hole (e-h) pairs. Driven by an electrical field in InGaAs, electrons are collected at the anode while holes reach the multiplication region (InAlAs p-i-n structure) and trigger the avalanche process. As a result, a large number of e-h pairs are created, and the holes move toward the cathode. Holes created by the avalanche process gain large kinetic energy through the electric field, and are considered hot. These hot holes are cooled as they travel across a p -InAlAs low field region, and are eventually blocked by energy barriers formed by the InGaAsP/ InAlAs heterojunctions. The composition of the InGaAsP alloy was chosen to have an 80 meV valance band offset with InAlAs, which is high enough to hinder the transport of the already cooled holes. Being stopped by the energy barrier, holes are accumulated at the junctions to shield the electric field, resulting in a decrease of the electric field in the multiplication region. Because the impact ionization rate is extremely sensitive to the magnitude of the electric field, the field-screening effect drastically reduces the impact ionization rate and quenches the output signals. After the avalanche pulse signal is self-quenched, the accumulated holes at the InGaAsP/ InAlAs interface escape the energy barrier through thermal excitation and tunneling and finally leave the device. The device is thus reset and ready for subsequent photon detection. This recovery time is controlled by the height of the energy barrier and the hole-cooling rate.
Two papers present a two-phase equilibrium model that partly explains insulator/ insulator contact charging. In this model, a vapor of ions within a gas is in equilibrium with a submonolayer of ions of the same species that have been adsorbed on the surface of an insulator. The surface is modeled as having localized states, each with a certain energy of adsorption for an ion. In an earlier version of the model described in the first paper, the ions do not interact with each other. Using the grand canonical ensemble, the chemical potentials of both vapor and absorbed phases are derived and equated to determine the vapor pressure. If a charge is assigned to the vapor particles (in particular, if single ionization is assumed), then the surface charge density associated with adsorbed ions can be calculated as a function of pressure. In a later version of the model presented in the second paper, the submodel of the vapor phase is extended to include electrostatic interactions between vapor ions and adsorbed ones as well as the screening effect, at a given distance from the surface, of ions closer to the surface. Theoretical values of this model closely match preliminary experimental data on the discharge of insulators as a function of pressure.