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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

A versatile LabVIEW and field-programmable gate array-based scanning probe microscope for in operando electronic device characterization

Understanding the complex properties of electronic and spintronic devices at the micro- and nano-scale is a topic of intense current interest as it becomes increasingly important for scientific progress and technological applications. In operando characterization of such devices by scanning probe techniques is particularly well-suited for the microscopic study of these properties. We have developed a scanning probe microscope (SPM) which is capable of both standard force imaging (atomic, magnetic, electrostatic) and simultaneous electrical transport measurements. We utilize flexible and inexpensive FPGA (field-programmable gate array) hardware and a custom software framework developed in National Instrument's LabVIEW environment to perform the various aspects of microscope operation and device measurement. The FPGA-based approach enables sensitive, real-time cantilever frequency-shift detection. Using this system, we demonstrate electrostatic force microscopy of an electrically biased graphene field-effect transistor device. The combination of SPM and electrical transport also enables imaging of the transport response to a localized perturbation provided by the scanned cantilever tip. Facilitated by the broad presence of LabVIEW in the experimental sciences and the openness of our software solution, our system permits a wide variety of combined scanning and transport measurements by providing standardized interfaces and flexible access to all aspects of a measurement (input and output signals, and processed data). Our system also enables precise control of timing (synchronization of scanning and transport operations) and implementation of sophisticated feedback protocols, and thus should be broadly interesting and useful to practitioners in the field.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2012

High-resolution and site-specific scanning spreading resistance microscopy and its applications to silicon devices

Due to the continuous reduction of the critical dimensions of semiconductor devices, it becomes very important to know the two dimensional (2D) doping profile for improving device performance. Scanning spreading resistance microscopy (SSRM) performed in high vacuum is a powerful technique for quantitative 2D-doping profiling, with high spatial resolution and wide dynamic range of carrier concentration, as well as capability of site-specific analysis for accurate position. In this paper, we review SSRM applications to source/drain engineering in Si devices and their correlation with device characteristics by demonstrating several case studies. Direct observation of (110)/(100) CMOSFETs clarified significant differences between both pFETs and nFETs on (110) and (100) silicon substrates, revealing 2D channeling effect of boron ion implantation in pFETs; as well as silicidation impact on junction leakage-current characteristics in nFETs. Furthermore, our sample-preparation breakthrough enables site-specific SSRM characterization within 60 nm ultra thin samples and therefore failure analysis of real SRAM devices, demonstrating the high potential of SSRM technology for further device scaling and for failure analysis.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A novel tensile device for in situ scanning electron microscope mechanical testing

To facilitate the study of deformation mechanisms and mechanical properties of bulk materials with feature size of centimeter level, a novel tensile device compatible with scanning electron microscope (SEM) was designed and built. Integrating the servo motor and three-stage reducer, the device could realize quasistatic loading mode with a loading speed of 10 nm/s. The device also presents broad compatibility with various types of SEMs due to its miniaturized dimensions and larger volume–output load ratio compared with existing and commercial tensile instruments. A small lead precise ball screw with left- and right-hand thread was adopted to keep the center of the specimen remain stationary without moving during the tensile testing. A novel gripping method was carefully taken into account to guarantee the alignment issues. The closed-loop control mode of the tensile process was developed. The displacement resolution of 40 nm was tested to verify the driving performance of the device. Furthermore, correction method on testing displacement was investigated based on the calibration experiments of the load sensor and displacement sensor, and the comparison tests based on stress–strain curve were carried out between the self-made device and the commercial tensile instrument (Instron 3345) to verify the feasibility and universality of the correction method.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Current-induced switching of thin film α - Fe 2 O 3 devices imaged using a scanning single-spin microscope

Electrical switching of Néel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically driven switching of ferromagnetic order via spin-orbit torques, electrical switching of antiferromagnetic order remains poorly understood. Here we investigate the low-field magnetic properties of 30-nm-thick, c-axis-oriented α-Fe 2 ⁢O 3 Hall devices using a diamond nitrogen-vacancy center scanning microscope. Using the canted moment of α-Fe 2⁢ O 3 as a magnetic handle on its Néel vector, we apply a saturating in-plane magnetic field to create a known initial state before letting the state relax in low field for magnetic imaging. Here, we repeat this procedure for different in-plane orientations of the initialization field. We find that the magnetic field images are characterized by stronger magnetic textures for fields along [$\overline{11}$20] and 11$\overline{2}$0, suggesting that despite the expected 3-fold magnetocrystalline anisotropy, our α-Fe 2 ⁢O 3 thin films have an overall in-plane uniaxial anisotropy. We also study current-induced switching of the magnetic order in α-Fe 2 ⁢O 3 . We find that the fraction of the device that switches depends on the current pulse duration, amplitude, and direction relative to the initialization field.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Analysis of Multilayer Devices for Superconducting Electronics by High-Resolution Scanning Transmission Electron Microscopy and Energy Dispersive Spectroscopy

We used a focused ion beam to obtain cross-sectional specimens from both magnetic multilayer and Nb/Al-AlOx/Nb Josephson junction devices for characterization by scanning transmission electron microscopy (STEM) and energy dispersive X-ray spectroscopy (EDX). An automated multivariate statistical analysis of the EDX spectral images produced chemically unique component images of individual layers within the multilayer structures. STEM imaging elucidated distinct variations in film morphology, interface quality, and/or etch artifacts that could be correlated to magnetic and/or electrical properties measured on the same devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

A scanning resonator for probing quantum coherent devices

Superconducting resonators with high quality factors are extremely sensitive detectors of the complex impedance of materials and devices coupled to them. This capability has been used to measure losses in multiple different materials and, in the case of circuit quantum electrodynamics (circuit QED), has been used to measure the coherent evolution of multiple different types of qubits. Here, we report on the implementation of a scanning resonator for probing quantum coherent devices. Our scanning setup enables tunable coherent coupling to systems of interest without the need for fabricating on-chip superconducting resonators. We measure the internal quality factor of our resonator sensor in the single-photon regime to be >104 and demonstrate capacitive imaging using our sensor with zeptoFarad sensitivity and micron spatial resolution at milliKelvin temperatures. We then use our setup to characterize the energy spectrum and coherence times of multiple transmon qubits with no on-chip readout circuitry. Our experiments introduce a new tool for using circuit QED to measure existing and proposed qubit platforms.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Methods and devices configured to operated scanning tunneling microscopes using out-of-bandwidth frequency components added to bias voltage and related software

In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM's feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

Moheimani, Seyed Omid Reza↗
DOE OSTI2023

Methods and devices configured to operated scanning tunneling microscopes using out-of-bandwidth frequency components added to bias voltage and related software

In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM's feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

Moheimani, Seyed Omid Reza↗
DOE OSTI2019

An interface stabilized perovskite solar cell with high stabilized efficiency and low voltage loss

Stabilization of the crystal phase of inorganic/organic lead halide perovskites is critical for their high performance optoelectronic devices. However, due to the highly ionic nature of perovskite crystals, even phase stabilized polycrystalline perovskites can undergo undesirable phase transitions when exposed to a destabilizing environment. While various surface passivating agents have been developed to improve the device performance of perovskite solar cells, conventional deposition methods using a protic polar solvent, mainly isopropyl alcohol (IPA), results in a destabilization of the underlying perovskite layer and an undesirable degradation of device properties. We demonstrate the hidden role of IPA in surface treatments and develop a strategy in which the passivating agent is deposited without destabilizing the high quality perovskite underlayer. This strategy maximizes and stabilizes device performance by suppressing the formation of the perovskite δ-phase and amorphous phase during surface treatment, which is observed using conventional methods. Our strategy also effectively passivates surface and grain boundary defects, minimizing non-radiative recombination sites, and preventing carrier quenching at the perovskite interface. This results in an open-circuit-voltage loss of only ~340 mV, a champion device with a power conversion efficiency of 23.4% from a reverse current–voltage scan, a device with a record certified stabilized PCE of 22.6%, and enhanced operational stability. In addition, our perovskite solar cell exhibits an electroluminescence external quantum efficiency up to 8.9%.

14 SOLAR ENERGY↗
DOE OSTI2016

Cyber-Physical Security Assessment (CyPSA) Toolset

CyPSA seeks to organize and gain insight into the diverse sets of data that a critical infrastructure provider must manage. Specifically CyPSA inventories, manages, and analyzes assets and relations among those assets. A variety of interfaces are provided. CyPSA inventories assets (both cyber and physical). This may include the cataloging of assets through a common interface. Data sources used to generate a catalogue of assets include PowerWorld, NPView, NMap Scans, and device configurations. Depending upon the role of the person using the tool the types of assets accessed as well as the data sources through which asset information is accessed may vary. CyPSA allows practitioners to catalogue relations among assets and these may either be manually or programmatically generated. For example, some common relations among assets include the following: Topological Network Data: Which devices and assets are connected and how? Data sources for this kind of information include NMap scans, NPView topologies (via Firewall rule analysis). Security Metrics Outputs: The output of various security metrics such as overall exposure. Configure Assets:CyPSA may eventually include the ability to configure assets including relays and switches. For example, a system administrator would be able to configure and alter the state of a relay via the CyPSA interface. Annotate Assets: CyPSA also allows practitioners to manually and programmatically annotate assets. Sources of information with which to annotate assets include provenance metadata regarding the data source from which the asset was loaded, vulnerability information from vulnerability databases, configuration information, and the output of an analysis in general.

Garcia, Luis↗
DOE OSTI2013

Ultrasonic probe deployment device for increased wave transmission and rapid area scan inspections

An ultrasonic probe deployment device in which an ultrasound-transmitting liquid forms the portion of the ultrasonic wave path in contact with the surface being inspected (i.e., the inspection surface). A seal constrains flow of the liquid, for example preventing the liquid from surging out and flooding the inspection surface. The seal is not rigid and conforms to variations in the shape and unevenness of the inspection surface, thus forming a seal (although possibly a leaky seal) around the liquid. The probe preferably is held in place to produce optimum ultrasonic focus on the area of interest. Use of encoders can facilitate the production of C-scan area maps of the material being inspected.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

Gamma imaging and mapping advancements

The Savannah River National Lab (SRNL) in partnership with Los Alamos National Lab (LANL) developed an in-situ GrayQb™ radiation mapping device eliminating the need to remove the radiation sensitive phosphor storage plate (PSP) from the device for scanning between exposures. By incorporating a customized version of the LANL patented MiniMax camera-based PSP reader system into the GrayQb™ housing, the exposed PSP can now be read in-situ and digitally transmitted to a remote computer for viewing. The ability to generate radiation contour maps showing source locations and relative radiological levels present in an area has high utility for targeting clean-up efforts, maintaining worker ALARA, determining leak locations and radiological situational awareness. In-situ GrayQb™ reduces the number of required interactions with the device providing deployment cost savings, increasing personnel safety and removing human handling errors during the manual scan process. Additionally, by negating the need for an external scanner, the device becomes more mobile. Other upgrades to the device included identification of a more sensitive imaging medium and incorporation of a dual pinhole rendering the device physically capable of obtaining 3D images. Laboratory tests with Am-241 sources using a mockup of the in-situ GrayQ™, successfully demonstrated the ability to digitally capture radiation source information using the dual pinhole and camera-based PSP reader.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Data for Magnetic Anisotropy due to Localized Structural Defects in Strained Yttrium Iron Garnet Thin Films

This dataset contains electron microscopy, magnetic, and X-ray diffraction characterization data for YIG/YSGG thin films associated with the manuscript "Magnetic anisotropy due to localized structural defects in strained yttrium iron garnet thin films". Characterizations include: scanning electron nano diffraction (SEND, or 4D-STEM), dark field transmission electron microscopy (DF-TEM), energy dispersive X-ray spectroscopy (EDS), ferrimagnetic resonance (FMR), superconducting quantum interference device (SQUID), scanning transmission electron microscopy (STEM), X-ray diffraction (XRD).

Electron microscopy↗
DOE OSTI2014

Direct observation of resistive heating at graphene wrinkles and grain boundaries

We directly measure the nanometer-scale temperature rise at wrinkles and grain boundaries (GBs) in functioning graphene devices by scanning Joule expansion microscopy with 50 nm spatial and 0.2K temperature resolution. We observe a small temperature increase at select wrinkles and a large (100 K) temperature increase at GBs between coalesced hexagonal grains. Comparisons of measurements with device simulations estimate the GB resistivity (8 150 X lm) among the lowest reported for graphene grown by chemical vapor deposition. An analytical model is developed, showing that GBs can experience highly localized resistive heating and temperature rise, most likely affecting the reliability of graphene devices. Our studies provide an unprecedented view of thermal effects surrounding nanoscale defects in nanomaterials such as graphene.

grain boundary↗
DOE OSTI2014

In situ SEM and ToF-SIMS analysis of IgG conjugated gold nanoparticles at aqueous surfaces

In this study, we report new results of in situ study of 5 nm goat anti-mouse IgG gold nanoparticles in a novel portable vacuum compatible microfluidic device using scanning electron microscope (SEM) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). The unique feature of the liquid flow cell is that the detection window is open to the vacuum allowing direct probing of the liquid surface. The flow cell is composed of a silicon nitride (SiN) membrane and polydimethylsiloxane (PDMS), and it is fully compatible with vacuum operations for surface analysis. The aperture can be drilled through the 100 nm SiN membrane using a focused ion beam. Characteristic signals of the conjugated gold nanoparticles were successfully observed through the aperture by both energy-dispersive X-ray spectroscopy (EDX) in SEM and ToF-SIMS. Comparison was also made among wet samples, dry samples, and liquid sample in the flow cell using SEM/EDX. Stronger gold signal can be observed in our novel portable device by SEM/EDX compared with the wet or dry samples, respectively. Our results indicate that analyses of the nanoparticle components are better made in their native liquid environment. This is made possible using our unique microfluidic flow cell.

aqueous surface↗
DOE OSTI2017

A Structural and Ellipsometric Investigation of Thin Gallium Oxide Layers Deposited on Si by Means of Laser Deposition

The morphology of Ga{sub 2}O{sub 3} layers deposited on a silicon substrate by pulse laser deposition is studied using scanning electron microscopy in the thickness range of 30–200 nm. Using spectroscopic ellipsometry in the wavelength range from 250 to 900 nm, the thickness of layers and dispersion of their optical parameters (complex pseudodielectric function ε, refractive and absorptive indices) have been determined and the fraction of voids has been estimated in the scope of the Bruggeman effective medium approximation. In the spectrum of the imaginary part ε{sub 2}, there is observed an increase in values in the region of energy E = 4.8 eV corresponding to the direct interband transition in the Ga{sub 2}O{sub 3} structure. X-ray structure analysis showed the presence of peaks typical for the β-Ga{sub 2}O{sub 3} structure. The results of the investigations can be used for the formation of wide-bandgap gallium oxide layers in developing devices of power electronics and in creating optoelectronic devices for the UV range.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗