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NASA NTRS1980

Catalytic recombination of nitrogen and oxygen on high-temperature reusable surface insulation

The energy transfer catalytic recombination coefficient for nitrogen and oxygen recombination on the surface coating of high-temperature reusable surface insulation (HRSI) is inferred from stagnation point heat flux measurements in a high-temperature dissociated arc jet flow. The resulting catalytic recombination coefficients are correlated with an Arrhenius model for convenience, and these expressions may be used to account for catalytic recombination effects in predictions of the heat flux on the HRSI thermal protection system of the Space Shuttle Orbiter during reentry flight. Analysis of stagnation point pressure and total heat balance enthalpy measurements indicates that the arc heater reservoir conditions are not in chemical equilibrium. This is contrary to what is usually assumed for arc jet analysis and indicates the need for suitable diagnostics and analyses, especially when dealing with chemical reaction phenomena such as catalytic recombination heat transfer effects.

Scott, C. D.↗

NASA NTRS1980

Dielectronic recombination rates, ionization equilibrium, and radiative emission rates for calcium and nickel ions in low-density high-temperature plasmas

The total dielectronic recombination rates for Ca and Ni ions were calculated taking into account autoionization to excited states of the recombining ion and stabilizing radiative transitions of the recombining electron. Radiative transitions of the recombining ion are found to be the dominant stabilizing processes, and the relative importance of Delta n = 0 and Delta n not equal to 0 transitions in the relevant temperature region is determined for each ion. The relative importance of the Delta n = 0 and Delta n not equal to 0 contributions is significantly altered for some ions by the inclusion of autoionization to excited levels. The relative abundance of the various ionization stages has been determined by using a corona equilibrium model in which collisional ionization and inner-shell excitation followed by autoionization are balanced by direct radiative and dielectronic recombination.

Jacobs, V. L.↗

NASA NTRS1991

Theoretical prediction of the impact of Auger recombination on charge collection from an ion track

A recombination mechanism that significantly reduces charge collection from very dense ion tracks in silicon devices was postulated by Zoutendyk et al. The theoretical analysis presented here concludes that Auger recombination is such a mechanism and is of marginal importance for higher density tracks produced by 270-MeV krypton, but of major importance for higher density tracks. The analysis shows that recombination loss is profoundly affected by track diffusion. As the track diffuses, the density and recombination rate decrease so fast that the linear density (number of electron-hole pairs per unit length) approaches a non-zero limiting value as t yields infinity. Furthermore, the linear density is very nearly equal to this limiting value in a few picoseconds or less. When Auger recombination accompanies charge transport processes that have much longer time scales, it can be simulated by assigning a reduced linear energy transfer to the ion.

Edmonds, Larry D.↗

NASA NTRS1993

Comparison of kinetic models for atom recombination on high-temperature reusable surface insulation

Five kinetic models are compared for their ability to predict recombination coefficients for oxygen and nitrogen atoms over high-temperature reusable surface insulation (HRSI). Four of the models are derived using Rideal-Eley or Langmuir-Hinshelwood catalytic mechanisms to describe the reaction sequence. The fifth model is an empirical expression that offers certain features unattainable through mechanistic description. The results showed that a four-parameter model, with temperature as the only variable, works best with data currently available. The model describes recombination coefficients for oxygen and nitrogen atoms for temperatures from 300 to 1800 K. Kinetic models, with atom concentrations, demonstrate the influence of atom concentration on recombination coefficients. These models can be used for the prediction of heating rates due to catalytic recombination during re-entry or aerobraking maneuvers. The work further demonstrates a requirement for more recombination experiments in the temperature ranges of 300-1000 K, and 1500-1850 K, with deliberate concentration variation to verify model requirements.

Willey, Ronald J.↗

NASA NTRS1994

Carbon recombination lines as a diagnostic of photodissociation regions

We have observed the C91 alpha radio recombination line toward the Orion H II region. This narrow (approximately 3-5 km per sec full width at half maximum (FWHM)) line is spatially very extended (approximately 8 arcmin or 1 pc). These charateristics compare well with the observed characteristics of the C II fine structure line at 158 microns. Thus, the C91 alpha line originates in the predominantly neutral photodissociation regions separating the H II region from the molecular cloud. We have developed theoretical models for the C II radio recombination lines from photodissociation regions. The results show that the I(C91 alpha)/I(C158) intensity ratio is a sensitive function of the temperature and density of the emitting gas. We have also extended theoretical models for photodissociation regions to include the C II recombination lines. Comparison with these models show that, in the central portion of the Orion region, the C91 alpha line originates in dense (10(exp 6) per cu cm), warm (500-1000 K) gas. Even at large projected distances (approximately 1 pc), the inferred density is still high (10(exp 5) per cu cm) and implies extremely high thermal pressures. As in the case of the (C II) 158 microns line, the large extent of the C91 alpha line shows that (FUV) photons can penetrate to large distances from the illuminating source. The decline of the intensity of the incident radiation field with distance from Theta(sup 1) C seems to be dominated by geometrical dilution, rather than dust extinction. Finally, we have used our models to calculate the intensity of the 9850 A recombination line of C II. The physical conditions inferred from this line are in good agreement with those determined from the radio recombination and the far-infrared fine-structure lines. We show that the ratio of the 9850 A to the C91 alpha lines is a very good probe of very high density clumps.

Natta, A.↗

NASA NTRS1973

Recombination in radar meteors

Recombinations in the ionized columns generated by faint radar meteors are observed as: (1) A rapid loss of returned signal in the first few milliseconds after formation of the column; (2) an apparent absence of bright, low meteors; and (3) anomalies in apparent diffusion rates. Recombination at rates characteristic of dissociative recombination of ionized atmospheric molecules N2(+) and O2(+) is completely consistent with the observations. It appears either that the molecules are ionized in the initial formation of the ionized column or that there is rapid charge exchange. Recombination is a sufficient cause for the differences between diffusion measures and other atmospheric studies.

Southworth, R. B.↗

NASA NTRS1976

Recombination of electrons with NH4/+/-/NH3/n-series ions

The paper examines the recombination of electrons with ammonium-series cluster ions, NH4(+)-(NH3)n, for two reasons: (1) NH4(+) may be a significant ion in the lower atmospheres of the earth and the outer planets, and (2) to investigate the weak temperature dependence of the cluster ion's recombination coefficient. A microwave afterglow mass spectrometer was used to determine the recombination coefficients for the first five members of the ammonium series, (18+) through (86+), at temperatures between 200 and 410 K. The electron temperature dependence of the recombination coefficient was determined for (35+) and (52+), the n = 1 and 2 cluster ions, over the temperature range 300-3000 K.

Huang, C.-M.↗

NASA NTRS1977

Surface recombination velocity and diffusion length of minority carriers in heavily doped silicon layers

Quantitative analysis of the electron beam-induced current and the dependence of the effective diffusion length of the minority carriers on the penetration depth of the electron beam were employed for the analysis of the carrier recombination characteristics in heavily doped silicon layers. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of P-diffused Si layers will be presented together with a three dimensional mapping of minority carrier lifetime in ion implanted Si. Layers heavily doped with As exhibit improved recombination characteristics as compared to those of the layers doped with P.

Gatos, H. C.↗

NASA NTRS1978

Radiative recombination of complex ions

The rates of radiative capture by atomic systems is computed for the first four ionization stages of the abundant elements C, N, O, Ne, Mg, Si, S, and Ar. A simple prescription is given for calculating the rates for systems in higher ionization stages. Results for capture to atomic helium are also given. In the general case, recent calculations of photoionization cross sections have been used to compute capture rates to levels of the ground-state configuration of the recombined species. Captures to other levels of the valence shell and to the higher shells are evaluated using hydrogenic formulae but with a correction factor which takes into account the nonhydrogenic nature of these states. This correction factor is due to the incomplete shielding by the inner electrons and represents essentially an effective charge for the recombining ion; it is determined semiempirically from an appropriate weighting of values derived from the observed level structure for each species. In some cases, for the capture to neutral atomic systems, its application increases the resulting computed recombination rate by a significant amount (about 50%). Computed recombination rates are tabulated for the four ionization stages at an electron temperature of 10,000 K and for the first stage at 100 K. A convenient procedure is outlined for evaluating the rates at other temperatures in the general neighborhood of these values.

Gould, R. J.↗

NASA NTRS1980

A laboratory study on the dissociative recombination of vibrationally excited O2/+/ions

The dissociative recombination of vibrationally excited O2(+) ions is studied in light of the possible importance of this reaction in upper atmospheric chemistry. A plasma spectroscopy experiment was performed in a microwave cavity filled by an argon-oxygen mixture, with O(1S) production monitored by measurements of the 5577-A afterglow, the O2(+) density and the electron concentration. Plasma and optical data reveal the predominant afterglow ions to be Ar2(+) and O2(+), with an effective O(1S) dissociative recombination coefficient of 2.1 x 10 to the -8th cu cm/sec, corresponding to a quantum yield of 10%. Experiments with an argon-krypton-oxygen mixture reveal that vibrationally excited O2(+) ions are the chief source of the O(1S) atoms, with a specific recombination coefficient for the dissociation of O2(+)(2 pi g) into O(1S) and O(1D) of 4.2 x 10 to the -9th cu cm/sec. A comparison of the laboratory results with Atmospheric Explorer data on the 5577-A airglow implies that O2(+) ions in the sunlit ionosphere are vibrationally excited to the same degree as in the laboratory, with the vibrational relaxation of these ions much slower than dissociative recombination. Results also predict a dawn-twilight asymmetry in the effective O(1S) yield due to the normal variation of electron content.

Zipf, E. C.↗

NASA NTRS1983

Catalytic recombination of nitrogen and oxygen on iron-cobalt-chromia spinel

The energy-transfer catalytic recombination coefficient for nitrogen and oxygen recombination on iron-cobalt-chromia spinel is inferred from stagnation-point heat flux measurements in dissociated arc-jet flow. This material was coated on several Space Shuttle Orbiter thermal protection tiles. The resulting coefficients are correlated with an Arrhenius model for convenience, and these expressions may be used to account for catalytic recombination in predictions of the heat flux on the spinel-coated tiles flown on several Space Shuttle Orbiter flights. The results are compared with those inferred by Rakich, Stewart, and Lanfranco from an Orbiter flight and arc-jet experiments. Good agreement is obtained for oxygen recombination, but agreement for nitrogen is poor.

Scott, C. D.↗

NASA NTRS1985

Recombination-cascade X-ray spectra of highly charged helium-like ions

It is shown that the relative intensity distribution among the X-ray spectral lines of helium-like ions from the n = 2 states produced through recombination processes such as radiative and charge transfer recombination may be given by considering in detail the radiative cascades following recombination. Model calculations are presented with predicted line ratios for Ar XVII and Fe XXV in recombination-dominated noncoronal plasmas. In particular, compared to coronal intensities, the singlet resonance line (w) should be much weaker relative to the triplet intercombination (x, y) and forbidden (z) lines, yielding large values for the ratio G = (x + y + z)/w. Accurate configuration interaction type wave functions are employed to calculate the eigenenergies, transition probabilities, and cascade coefficients. Certain relevant tokamak and astrophysical observations are discussed.

Pradhan, A. K.↗

NASA NTRS1985

Ram vehicle glow spectrum - Implication of NO2 recombination continuum

An experiment was operated on several Space Shuttle missions to provide spatial and spectral distributions of a ram glow associated with the Orbiter. The most recent data featured resolved spectrum and imagery of the glow with spectroscopic resolution of 34 A FWHM between 4000 and 8000 A. The spectrum of the glow on the Shuttle tail pod could be clearly separated from spectrum of the reflected light from the Orbiter. Analysis and comparison have been performed which strongly suggest the emission originates from recombination continuum of NO2. Both fast recombination (high temperature) and the spectral dependence in lifetime can describe the spectral difference. If the recombined NO2 retains 25 percent of the kinetic energy of the ram OI, the thickness of the glow layer can be explained by the lifetime of NO2 (2B1) recombination emission.

Swenson, G. R.↗

NASA NTRS1988

Electron-temperature dependence of the recombination of HCO(+) ions with electrons

A microwave-afterglow mass-spectrometer apparatus employing microwave heating of the electrons has been used to determine the dependence on Te of the recombination coefficient of electrons with HCO(+) ions. By comparison of the observed electron-density decays to the computed behavior of a recombination- and ambipolar-diffusion-controlled afterglow, it is found that the Te dependence of the recombination coefficients follows a power law with an index of -0.69 + or - 0.07 over the range Te = 293-5500 K. The magnitude of the recombination coefficient is similar to that observed and calculated for simple diatomic ions, while the temperature dependence is somewhat stronger than the Te exp -0.5 dependence predicted by a simplified theory for diatomic ions.

Ganguli, B.↗

NASA NTRS1990

Surface recombination velocity and lifetime in InP measured by transient microwave reflectance

Minority carrier lifetime and surface recombination velocity are determined in organometallic vapor-phase epitaxy (OMVPE)-grown InP by a contactless microwave technique. For lightly doped n-type InP, a surface recombination velocity of 5000 cm/s is measured. However, in solar cells with a heavily doped n-type emitter a surface recombination velocity of 1 x 10 to the 6th cm/s is observed. Possible reasons for this due to surface pinning are discussed. The effects of various chemical treatments and SiO on the surface recombination velocity are measured.

Bothra, S.↗

NASA NTRS1991

The generation of O(1S) from the dissociative recombination of O2(+)

The multichannel quantum defect theory (MQDT) method and large scale wave functions are applied to the calculation of the cross sections and rates for dissociative recombination of O2(+) along the 1Sigma-u(+) dissociative potential. Indirect dissociative recombination is accounted for by simultaneously including both the vibronic and electronic coupling to the intermediate Rydberg resonances. An enhanced MQDT approach involving a second-order K matrix is described. Cross sections and rates for the lowest three vibrational levels of the ion are reported. The shapes of the cross sections are discussed in terms of Fano's profile index. It is found that, for each of the three ion vibrational levels, the intermediate Rydberg resonances reduce the dissociative recombination rate below the direct recombination rate. Just above threshold, resonances with centers below threshold play an important role.

Guberman, Steven L.↗

NASA NTRS1991

Theoretical prediction of the impact of Auger recombination on charge collection from an ion track

The theoretical analysis presented indicates that Auger recombination can reduce charge collection from very dense ion tracks in silicon devices. It is of marginal importance for tracks produced by 270-MeV krypton, and therefore it is of major importance for ions exhibiting a significantly larger loss. The analysis shows that recombination loss is profoundly affected by track diffusion. As the track diffuses, the density and recombination rate decrease so fast that the linear density (number of electron-hole pairs per unit length) approaches a nonzero limiting value as t approaches infinity. Furthermore, the linear density is very nearly equal to this limiting value in a few picoseconds or less. When Auger recombination accompanies charge transport processes that have much longer time scales, it can be simulated by assigning a reduced linear energy transfer to the ion.

Edmonds, Larry D.↗

NASA NTRS1992

On the density and field sensitivities of dielectronic recombination

Dielectronic recombination dominates the recombination rates of most ions in coronal plasmas at their temperatures of peak concentration. Because dielectronic recombination goes by way of high nl doubly excited levels, it is susceptible to collisional excitation and ionization, leading to a decreased rate. On the other hand, theoretical studies show that Stark mixing of the nl levels by a modest electric field enhances the dielectronic recombination rate severalfold. The ionization balance is computed here as as function of density, and it is found that the new results require increased emission measures to match the C IV emission line intensities observed in the sun and in late-type stars. They also make it more difficult to interpret the overall EUV emission line spectrum of the sun.

Reisenfeld, Daniel B.↗