Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Raman optical activity”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Superposition of intra- and inter-layer excitons in twistronic MoSe 2 /WSe 2 bilayers probed by resonant Raman scattering

Abstract Hybridisation of electronic bands of two-dimensional materials, assembled into twistronic heterostructures, enables one to tune their optoelectronic properties by selecting conditions for resonant interlayer hybridisation. Resonant interlayer hybridisation qualitatively modifies the excitons in such heterostructures, transforming these optically active modes into superposition states of interlayer and intralayer excitons. For MoSe 2 /WSe 2 heterostructures, strong hybridization of both single particle and excitonic states can occur via single particle tunnelling. Here we use resonance Raman scattering to provide direct evidence for the hybridisation of excitons in twistronic MoSe 2 /WSe 2 structures, by observing scattering of specific excitons by phonons in both WSe 2 and MoSe 2 . We also demonstrate that resonance Raman scattering spectroscopy opens up a wide range of possibilities for quantifying the layer composition of the superposition states of the exciton and the interlayer hybridisation parameters in heterostructures of two-dimensional materials.

Materials Science↗
DOE OSTI2023

Photonics in Multimaterial Lateral Heterostructures Combining Group IV Chalcogenide van der Waals Semiconductors

Abstract Lateral heterostructures combining two multilayer group IV chalcogenide van der Waals semiconductors have attracted interest for optoelectronics, twistronics, and valleytronics, owing to their structural anisotropy, bulk‐like electronic properties, enhanced optical thickness, and vertical interfaces enabling in‐plane charge manipulation/separation, perpendicular to the trajectory of incident light. Group IV monochalcogenides support propagating photonic waveguide modes, but their interference gives rise to complex light emission patterns throughout the visible/near‐infrared range both in uniform flakes and single‐interface lateral heterostructures. Here, this work demonstrates the judicious integration of pure and alloyed monochalcogenide crystals into multimaterial heterostructures with unique photonic properties, notably the ability to select photonic modes with targeted discrete energies through geometric factors rather than band engineering. SnS‐GeS 1− x Se x ‐GeSe‐GeS 1− x Se x heterostructures with a GeS 1− x Se x active layer sandwiched laterally between GeSe and SnS, semiconductors with similar optical constants but smaller bandgaps, were designed and realized via sequential vapor transport synthesis. Raman spectroscopy, electron microscopy/diffraction, and energy‐dispersive X‐ray spectroscopy confirm a high crystal quality of the laterally stitched components with sharp interfaces. Nanometer‐scale cathodoluminescence spectroscopy provides evidence for a facile transfer of electron–hole pairs across the lateral interfaces and demonstrates the selection of photon emission at discrete energies in the laterally embedded active (GeS 1− x Se x ) part of the heterostructure.

2D layered crystals↗
DOE OSTI2020

Electron- and light-induced stimulated Raman spectroscopy for nanoscale molecular mapping

We propose and theoretically analyze a new vibrational spectroscopy, termed electron- and light-induced stimulated Raman (ELISR) scattering, that combines the high spatial resolution of elec-tron microscopy with the molecular sensitivity of surface-enhanced Raman spectroscopy. WithELISR, electron-beam excitation of plasmonic nanoparticles is utilized as a spectrally-broadband butspatially-confined Stokes beam in the presence of a diffraction-limited pump laser. To characterizethis technique, we develop a numerical model and conduct full-field electromagnetic simulations toinvestigate two distinct nanoparticle geometries, nanorods and nanospheres, coated with a Raman-active material. Our results show the significant (10 6 -10 7 ) stimulated Raman enhancement that isachieved with dual electron and optical excitation of thesenanoparticle geometries. Importantly,the spatial resolution of this vibrational spectroscopy for electron microscopy is solely determinedby the nanoparticle geometry and the plasmon mode volume. Our results highlight the promiseof ELISR for simultaneous high-resolution electron microscopy with sub-diffraction-limited Ramanspectroscopy, complementing advances in superresolutionmicroscopy, correlated light and electronmicroscopy, and vibrational electron energy loss spectroscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Li Isotope Signatures using Optical Spectroscopies

The primary goal of this work is to investigate the detection capabilities of laser ablation molecular isotopic spectrometry (LAMIS) and Raman spectroscopy for lithium isotopic determination as related to Li enrichment activities. LAMIS is an emerging spectroscopic technique that takes advantage of the fact that molecules exhibit much larger isotopic wavelength shifts in molecular emission spectra than their atomic counterparts. Raman spectroscopy has been shown to exhibit isotopic shifts if a given molecular vibration involves the isotope of interest. Both techniques are comprised of the same basic hardware: a spectrometer, a laser system (pulsed for LAMIS, pulsed or CW for Raman), and an intensified charge-coupled device (ICCD). Shifts in Raman spectra due to lithium isotopes in Li 2 C0 3 and LiOH*H 2 0 were observed. LAMIS measurements of the same compounds have not been successful yet, as no lithium containing molecular emissions have been identified to this point. However, an isotopic shift of the self-reversal of an atomic lithium emission was observed, which is another optical technique used to measure isotopes.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2023

Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy

The increase of device lifetime and reliability of THz photomixers will play an essential role in their possible future application. Therefore, their optimal work conditions/operation range, i.e., the maximal incident optical power should be experimentally estimated. We fabricated and tested THz photomixer devices based on nitrogen-implanted GaAs integrated with a Bragg reflector. Raman spectroscopy was applied to investigate the material properties and to disclose any reversible or irreversible material changes. The results indicate that degradation effects in the photomixer structures/material could be avoided if the total optical power density does not exceed levels of about 0.7 mW/µm 2 for 100 min of operation. Furthermore, the investigations performed during 1000 min of optical exposure on the photomixer devices’ central region comprising interdigitated metal-semiconductor-metal (MSM) structures suggest a reversible “curing” mechanism if the power density level of ~0.58 mW/µm 2 is not exceeded. Long-term operation (up to 1000 h) reveals that the photomixer structures can withstand an average optical power density of up to ~0.4 mW/µm 2 without degradation when biased at 10 V. Besides the decrease of the position of the A1g (LO) Raman mode from ~291 cm -1 down to ~288 cm -1 with increasing optical power density and operation time, broad Raman modes evolve at about 210 cm -1 , which can be attributed to degradation effects in the active photomixer/MSM area. In addition, the performed carrier lifetime and photomixer experiments demonstrated that these structures generated continuous wave sub-THz radiation efficiently as long as their optimal work conditions/operation range were within the limits established by our Raman studies.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Selectively accessing the hotspots of optical nanoantennas by self-aligned dry laser ablation

Plasmonic nanostructures serve as optical antennas for concentrating the energy of incoming light in localized hotspots close to their surface. By positioning nanoemitters in the antenna hotspots, energy transfer is enabled, leading to novel hybrid antenna-emitter-systems, where the antenna can be used to manipulate the optical properties of the nano-objects. The challenge remains how to precisely position emitters within the hotspots. We report a self-aligned process based on dry laser ablation of a calixarene that enables the attachment of molecules within the electromagnetic hotspots at the tips of gold nanocones. Within the laser focus, the ablation threshold is exceeded in nanoscale volumes, leading to selective access of the hotspot areas. A first indication of the site-selective functionalization process is given by attaching fluorescently labelled proteins to the nanocones. In a second example, Raman-active molecules are selectively attached only to nanocones that were previously exposed in the laser focus, which is verified by surface enhanced Raman spectroscopy. Enabling selective functionalization is an important prerequisite e.g. for preparing single photon sources for quantum optical technologies, or multiplexed Raman sensing platforms.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Anomalous phonon-mode dependence in polarized Raman spectroscopy of the topological Weyl semimetal TaP

Topological Weyl semimetals (WSMs) have attracted widespread interest due to the chiral Weyl fermions and surface Fermi arcs that enable unique optical and transport phenomena. In this work, we present angle-resolved Raman spectroscopy of TaP, a prototypical noncentrosymmetric WSM, for five excitation wavelengths ranging from 364 to 785 nm. The Raman-active modes, $A_1$, $B^1_1$, and $B^2_1$ modes, exhibit two main unique features beyond the conventional Raman theory. First, the relative intensities of Raman-active modes change as a function of the excitation wavelength. Second, angle-resolved polarized Raman spectra show systematic deviation from the Raman tensor theory. In particular, the $B^1_1$ mode is absent for 633-nm excitation, whereas the $B^2_1$ mode shows an unusual twofold symmetry instead of a fourfold symmetry for 488-, 532-, and 633-nm excitations. Finally, these unconventional phenomena are attributed to the interference effect in the Raman process owing to the existence of multiple carrier pockets with almost the same energy but different symmetries.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

SILICON CARBIDE THERMOMETRY USING RAMAN SPECTROSCOPY ON IRRADIATED TRISO PARTICLES

Silicon carbide (SiC) passive thermometry has emerged as a promising post-irradiation examination (PIE) technique for estimating irradiation temperature near the end of irradiation. While dilatometry techniques have been traditionally used to analyze prismatic samples after irradiation, Raman spectroscopy has recently been shown to provide comparable results by analyzing Raman-active phonon modes. In this work, Raman spectroscopy has been applied to the SiC layer of cross-sectioned irradiation tristructural isotropic (TRISO) particles from the AGR-5/6/7 experiment to evaluate the feasibility of particle-scale passive thermometry. Two-dimensional Raman mapping was used to measure the position of the SiC longitudinal optical (LO) phonon, which was then converted to an apparent irradiation temperature using a previously established empirical correlation. Particles from AGR-5/6/7 Compacts 2-2-1 and 5-1-3 were selected as their calculated time-averaged, volume-averaged (TAVA) temperatures (828°C and 706°C, respectively) fall within the range of the sensitivity of the experimental approach. The use of SiC thermometry was anticipated to confirm or highlight potential deviations from calculated end-of-life TAVA temperature across compacts. Four particles from Compact 2-2-1 and two particles from Compact 5-1-3 were selected based on 110mAg inventory (either some measurable activity or below the minimum detection limit) which is commonly used as an indicator of in-pile temperature variation of particles within the same compact. Across every particle selected it was determined that the average LO peak position was located around 968 cm-1 to 969 cm-1. Using the previously determined empirical correlation, this corresponds to an irradiation temperature around 950°C to 966°C, which does not align with the reported TAVA temperature values. This discrepancy in apparent irradiation temperatures likely reflects a combination of uncertainties in the calculated particle temperatures and differences in irradiation history between the present specimens and those used to establish the empirical Raman calibration such as neutron flux (damage rate) and SiC microstructure (as fabricated and irradiated).

Vawdrey, Josh [ORNL]↗
DOE OSTI2022

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, in this paper, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band x-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and Raman) and microscopic (atomic force microscopy and scanning transmission electron microscopy) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that the BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (~234 V) as compared to GaN (~168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step toward bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.

42 ENGINEERING↗
DOE OSTI2025

Enhanced production of active species and NH 3 using non-equilibrium ferroelectric barrier discharge

Non-equilibrium plasma-assisted ammonia synthesis is investigated through enhanced active species production with ferroelectric discharge. Time-resolved in-situ diagnostics of femtosecond two-photon absorption laser-induced fluorescence, coherent anti-Stokes Raman scattering, and laser absorption spectroscopy, as well as optical emission spectroscopy, were conducted to probe the key intermediate species, such as H and N radicals as well as N 2 (ν), ions, and NH 3 to achieve better understanding of non-equilibrium energy transfer and ammonia formation. The results reveal that ferroelectric discharge improved ammonia yield by four times. Results also show that ferroelectrics not only enhanced ions (N 2 + ) production, radicals (N, H) number density, but also increased the N 2 vibrational temperature. Further plasma modeling identified the couplings between elevated radical and ion production and enhanced vibrational excitation reactions, e.g., N + H 2 (ν)→NH + H, N 2 (ν)+H → NNH, N 2 + + H 2 → H + N 2 H + , and N 2 H + +e→NH + N, facilitated by ferroelectric discharge. These findings provide critical insight into the mechanism of ferroelectric plasma catalysis and highlight their potential in advancing energy-efficient chemical synthesis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Photoexcitation of Fe 3 O Nodes in MOF Drives Water Oxidation at pH=1 When Ru Catalyst Is Present

Abstract Artificial photosynthesis strives to convert the energy of sunlight into sustainable, eco‐friendly solar fuels. However, systems with light‐driven water oxidation reaction (WOR) at pH=1 are rare. Broadly used [Ru(bpy) 3 ] 2+ (bpy=2,2’‐bipyridine) photosensitizer has a fixed +1.23 V potential which is insufficient to drive most water oxidation catalysts (WOCs) in acid, while Fe 2 O 3 , featuring the highly oxidizing holes, is not stable at low pH. Here, the key examples of Fe‐based metal–organic framework (MOF) water oxidation photoelectrocatalysts active at pH=1 are presented. Fe‐MIL‐126 and Fe MOF‐dcbpy structures were formed with 4,4’‐biphenyl dicarboxylate (bpdc), 2,2’‐bipyridine‐5,5’‐dicarboxylate (dcbpy) linkers and their mixtures. Presence of dcbpy linkers allows integration of metal‐based catalysts via coordination to 2,2’‐bipyridine fragments. Fe‐based MOFs were doped with Ru‐based precursors to achieve highly active MOFs bearing [Ru(bpy)(dcbpy)(H 2 O) 2 ] 2+ WOC. Materials were analyzed with X‐ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infra‐red (FTIR) spectroscopy, resonance Raman, X‐ray absorption spectroscopy, fs optical pump‐probe, electron paramagnetic resonance (EPR), diffuse reflectance and electric conductivity measurements and were modeled by band structure calculations. It is shown that under reaction conditions, Fe III and Ru III oxidation states are present, indicating rate‐limiting electron transfer in MOF. Fe 3 O nodes emerge as photosensitizers able to drive prolonged O 2 evolution in acid. Further developments are possible via MOF's linker modification for enhanced light absorption, electrical conductivity, reduced MOF solubility in acid, Ru‐WOC modification for faster WOC catalysis, or Ru‐WOC substitution to 3d metal‐based systems. The findings give further insight for development of light‐driven water splitting systems based on Earth‐abundant metals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Single crystal growth of iridates without platinum impurities

Iridates have attracted much interest in the last decade for their novel magnetism emerging in the limit of strong spin-orbit coupling and possible unconventional superconductivity. A standard for growing iridate single crystals has been the flux method using platinum crucibles. Here, in this work, we show that this widely used method compromises the sample quality by inclusion of platinum impurities. We find that Sr 2 ⁢IrO 4 single crystals grown in iridium crucibles show remarkable differences from those grown in platinum crucibles in their sample characterizations using Raman spectroscopy, resistivity, magnetization, optical third harmonic generation, resonant x-ray diffraction, and resonant inelastic x-ray scattering measurements. In particular, we show that several peaks of sizable intensities disappear in the Raman spectra of samples free of platinum impurities, and a significantly larger activation energy is extracted from the resistivity data compared to previously reported values. Furthermore, we find no evidence of the previously reported glide-symmetry-breaking structural distortions and confirm the I⁢ 4 1 / acd space group of the lattice symmetry. Although the platinum impurities are not apparent in the magnetic properties and thus went unnoticed in the stoichiometric insulating phase for a long time, their effects can be much more detrimental to transport properties in chemically doped compounds. Therefore, our result suggests using growth methods that avoid platinum impurities for an investigation of the intrinsic physical properties of iridates, and possible superconducting phases.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Spectrally selective fundamental core mode suppression in optical fibre containing absorbing rods

The feasibility of making a wavelength-selective fibre filter using fibre with absorbing rods in its silica cladding has been demonstrated theoretically for the first time. The technique described in this paper is of great practical interest for designing fibre lasers and amplifiers emitting at wavelengths where lasing is impeded by the presence of more energetically favourable radiative transitions in the active medium. In addition, the approach proposed here can be used for stimulated Raman scattering suppression. The unique feature of the fundamental core mode suppression mechanism examined is that there is a (bending) controlled spectral width of a region where excess losses are produced. (selection of papers presented at the international workshop on fibre lasers (20 – 24 September 2020, Novosibirsk))

36 MATERIALS SCIENCE↗
DOE OSTI2023

Raman Wavelength Conversion in Ionic Liquids

Here, we explore the use of room-temperature ionic liquids (ILs) as Raman wavelength converters. ILs provide an engineerable framework to design suitable liquids for wavelength conversion over a broad spectral range, through careful selection of the molecular structures of the IL anions and cations so that specific characteristics can be obtained, such as a desirable Raman shift, low Brillouin scattering, and good optical transmission in the pump and Stokes wavelengths. Applying such criteria, we demonstrate that 1-ethyl-3-methylimidazolium dicyanamide (EMIM DCA) is an effective medium for conversion of 532-nm pulses from a Q-switched Nd :YAG laser to 603 nm. This corresponds to an approximate 2200 cm –1 shift, which can be used to generate mid-infrared radiation through subsequent difference frequency generation for optical pumping of CO 2 lasers. Threefold-higher Raman conversion efficiency is obtained in EMIM DCA compared with water under identical conditions in a proof-of-principle single-pass conversion setup, resulting in an efficient generation of multimillijoule, <6 ns duration, high-quality orange laser pulses in a wavelength region that is difficult to access at high energies. Consequently, we examine ILs representing two other classes of Raman-active functional groups and obtain conversion up to the fifth-order Stokes shift and first anti-Stokes shift. Through the tunable selection of their components and their useful dynamical properties, ILs provide a platform for efficient, simple, and alignment-tolerant high-energy Raman shifting with numerous industrial and technological applications.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

Hyper-Raman spectroscopy of CeO 2

Cerium dioxide (CeO 2 ) belongs to the fluorite structure group (Oh 5 point group) resulting in one Raman active T 2g mode and two IR active T 1u TO and LO modes. The T 2g Raman band in CeO 2 has been used to probe the symmetric Ce-O vibrational mode of different sized nanoparticulates. Far infrared studies of the Ce-O interactions are difficult to conduct due to low optical transmission, efficiency of the detector and water absorption bands interfering with the measurements. The selection rules of hyper-Raman spectroscopy (HRS) allow the study of IR bands in the far infrared spectral region, such as the motion of the Ce atoms. For the first time, HRS was used to investigate the T 1u TO and LO IR modes in CeO 2 . The position and full-width half-maximum (FWHM) of the TO and LO bands in the HRS spectrum were used to investigate the spectral response in relation to particle size (i.e., phonon confinement). The investigation of CeO2 with HRS provides a research platform for future work in the study of ThO 2 , UO 2 and PuO 2 IR modes.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

Spectroscopic Investigation into P(NDI2OD-T2) Charge Localization

P(NDI2OD-T2), commonly referred to as N2200, stands out as a promising electron-transporting (n-type) polymer for low-cost, flexible (photo)electrochemical applications due to its reversible two-electron reduction and high electron mobility. UV–vis spectroelectrochemistry in the tetrabutyl ammonium hexafluorophosphate/acetonitrile electrolyte shows two sets of chemically reversible redox signals in the cyclic voltammetry corresponding to the reduction of the neutral polymer film to polaronic and bipolaronic species. These electrochemical signatures suggest a distinct electronic reorganization upon reduction (polaron/bipolaron formation), highlighting the need for molecular-level insights into how charges are accommodated within the polymer backbone. While it has been previously hypothesized that charge predominantly localizes on the naphthalene diimide (NDI) unit during reductive charging, specific changes in atomic environments that confirm this localization have not been characterized in n-type polymers. Herein, we use near-edge X-ray absorption fine structure (NEXAFS) spectroscopy to probe electronic transitions in an electrochemically charged polymer to deduce charge localization. The O K-edge (1s) spectra exhibit two distinct π* peaks; the intensity of the lower-energy π* a peak that corresponds to an excitation to a largely localized carbonyl state decreases with reductive potentials relative to the higher-energy π* b peak. We corroborate this with Raman spectroscopy at different potentials, which shows a decrease in intensity on the C–C/C═C and C═O stretching bands of NDI as well as a red shift of the carbonyl band due to the formation of a polaron on the NDI. Additionally, new Raman active NDI signals associated with elongated C═O and C═C bonds are observed at lower energy during the formation of charged states. Together with theoretical calculations, these findings show that the injected charge spatially localizes on the NDI units and is dominantly distributed on the carbonyl groups. In conclusion, the combination of NEXAFS, optical and vibrational spectroscopies, and theoretical calculations is generalizable to other pi-conjugated polymers and can identify charge localization for the further development of organic semiconductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Using Raman scattering to study reacting gas flow over a catalyst

l present a series of computational methods for analyzing and correcting Raman scattering from a reacting gas flow. My work focused on the laser diagnostic measurements of formaldehyde production over a silver catalyst, specifically the Raman spectroscopy component. This technique offers a non-intrusive, in situ way to measure the coupling between the gas phase and surface activity of a catalytic reaction at relevant industrial conditions. This report outlines the steps followed for correcting the non-idealities in the data due to both the detection optics and scattering mechanics. By implementing such refinement steps, l can generate an accurate 2D spatial map of the temperature profile, number densities for major species, and relative consumption of reactants throughout the reactor cell.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

The Nonradiative Properties of Self–Trapped Holes in Ultra–Wide Bandgap Gallium Oxide Film

The photoluminescence (PL) of self-trapped holes (STH) in ultra-wide bandgap β-Ga 2 O 3 is commonly its most dominant light emission and is an inherent property. Thus, gaining knowledge of the crystal dynamics that impact the PL properties is vital to sensor and other technologies. The PL, Raman-phonons, and their interactions are studied at an extreme temperature range of 77–622 K. The PL is studied up to the bandgap value of ≈5 eV. It is found that the high-energy Raman modes provide a major route to the nonradiative process of the PL via STH–phonon interaction with an activation energy of 72 meV. This dynamic is modeled with the configurational coordinate scheme at the strong phonon coupling limit. The exceptionally broad Gaussian PL linewidth manifests this coupling. The weak temperature response of the PL energy peak position indicates that the STH has characteristics of a deep-level defect. This contrasts with the large redshift of ≈220 meV of the optical gap of the film, ascertained from transmission. Unlike the temperature response of the high-energy phonons, the behavior of the low-energy phonons is found to follow the Bose–Einstein population increase, indicating no strong interaction with the STH.

Raman↗