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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Epitaxy of Beta-Ga2O3 on Highly-Offcut (Greater than 10 Degrees) Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction.1 These films show step-flow growth from (-201) step-edges and high electron mobility. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (4.8 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe 100% reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗
NASA NTRS1987

The comet rendezvous asteroid flyby mission

The Comet Rendezvous Asteroid Flyby Mission (CRAF) is described. After gravity assists from Venus and Earth, the spacecraft will fly by the asteroid 46 Hestia en route to a rendezvous with P/Tempel 2 in Nov. 1996, when the comet is near aphelion. The scientific experiments for the CRAF mission are: an imaging system; a visual and infrared mapping spectrometer; an infrared radiometer; a penetrator carrying a gamma-ray spectrometer, a scanning differential calorimeter and evolved gas analyzer, accelerometers, and temperature probes; a neutral gas and thermal ion mass spectrometer; a secondary ion mass spectrometer for analyzing dust, gas, and thermal ions; a scanning electron microscope and particle analyzer; an X-ray fluorescence and gas chromatographic analyzer for collected dust and ice samples; a dust counter and velocity analyzer; a retarding potential ion mass spectrometer; a supra-thermal ion mass spectrometer and electron analyzer; a magnetometer; and a coordinated radio, electron, and plasma wave analyzer.

Neugebauer, M.↗
NASA NTRS1975

Electron plasma oscillations associated with type 3 radio emissions and solar electrons

An extensive study of the IMP-6 and IMP-8 plasma and radio wave data was performed to try to find electron plasma oscillations associated with type III radio noise bursts and low-energy solar electrons. It is shown that electron plasma oscillations are seldom observed in association with solar electron events and type III radio bursts at 1.0 AU. For the one case in which electron plasma oscillations are definitely produced by the electrons ejected by the solar flare the electric field strength is relatively small. Electromagnetic radiation, believed to be similar to the type III radio emission, is observed coming from the region of the more intense electron plasma oscillations upstream. Quantitative calculations of the rate of conversion of the plasma oscillation energy to electromagnetic radiation are presented for plasma oscillations excited by both solar electrons and electrons from the bow shock. These calculations show that neither the type III radio emissions nor the radiation from upstream of the bow shock can be adequately explained by a current theory for the coupling of electron plasma oscillations to electromagnetic radiation.

Gurnett, D. A.↗
NASA NTRS1975

Electron plasma oscillations associated with type III radio emissions and solar electrons

Results of an extensive search for electron plasma oscillations associated with type III radio noise bursts are presented which were obtained by analyzing 87 type III bursts detected in plasma-wave and charged-particle measurements carried out by IMP 6, 7, and 8. Only one case is found for which plasma oscillations were associated with electrons of solar origin; at least eight events are identified in which no plasma oscillations were detected even though electrons from solar flares were clearly evident. The type III emissions are compared with similar radiation coming from upstream of earth's bow shock at the harmonic of the local electron plasma frequency, and quantitative calculations of the rate of conversion from plasma oscillatory energy to electromagnetic radiation are performed. The results show that electron plasma oscillations are seldom observed in association with solar electron events and type III radio bursts at 1.0 AU and that neither the type III emissions nor the radiation from upstream of the bow shock can be adequately explained by a current model for the coupling of electron plasma oscillations to electromagnetic radiation. Several possible explanations are considered for this discrepancy between theory and observations.

Gurnett, D. A.↗
NASA NTRS2001

Multiplexing of Radio-Frequency Single Electron Transistors

We present results on wavelength division multiplexing of radio-frequency single electron transistors. We use a network of resonant impedance matching circuits to direct applied rf carrier waves to different transistors depending on carrier frequency. A two-channel demonstration of this concept using discrete components successfully reconstructed input signals with small levels of cross coupling. A lithographic version of the rf circuits had measured parameters in agreement with electromagnetic modeling, with reduced cross capacitance and inductance, and should allow 20 to 50 channels to be multiplexed.

Stevenson, Thomas R.↗
NASA NTRS1977

X rays from radio binaries

The radio emission from Beta Persei is interpreted as synchrotron emission, and it is suggested that the observed X-ray emission is due to inverse Compton scattering of light from the primary star by the radio electrons. Annihilation of rotationally twisted magnetic-field lines connecting the binary stars is assumed to be the energy source for the electrons. This model is used to calculate the X-ray emission expected from Beta Persei as well as from the other radio binaries CC Cas, AR Lac, Beta Lyr, b Per, and Cyg X-1. Good agreement between observed and computed fluxes is found for Beta Persei, but the result for Cyg X-1 clearly indicates a different X-ray-emitting process.

Apparao, K. M. V.↗
DOE OSTI2020

Experimental Demonstration of Hadron Beam Cooling Using Radio-Frequency Accelerated Electron Bunches

Cooling of beams of gold ions using electron bunches accelerated with radio-frequency systems was recently experimentally demonstrated in the Relativistic Heavy Ion Collider at Brookhaven National Laboratory. Such an approach is new and opens the possibility of using this technique at higher energies than possible with electrostatic acceleration of electron beams. The challenges of this approach include generation of electron beams suitable for cooling, delivery of electron bunches of the required quality to the cooling sections without degradation of beam angular divergence and energy spread, achieving the required small angles between electron and ion trajectories in the cooling sections, precise velocity matching between the two beams, high-current operation of the electron accelerator, as well as several physics effects related to bunched-beam cooling. Here we report on the first demonstration of cooling hadron beams using this new approach.

43 PARTICLE ACCELERATORS↗
NASA NTRS1979

HEAO 1 scanning modulation collimator discovery of an extended X-ray source at Cygnus A

The HEAO 1 modulation-collimator data associate the X-ray emission from the Cygnus A region (4U 1957 + 40) with a small area including the radio galaxy. The source appears to be extended, with a size of about 2 arcmin; it may have a complex geometry. Any point-source component must have a flux no greater than 1.3 UFU. A lower limit of 1 microgauss is placed on the magnetic field in the radio lobes, based on the upper limit on the X-ray flux due to inverse Compton scattering of radio electrons on the 2.7-K microwave background radiation. The X-ray emission is more likely due to driven accretion of the intercluster gas onto the giant cD radio galaxy. Therefore this source appears to be similar to the Virgo and Perseus clusters. The density derived for the X-ray-emitting gas is too small for its thermal pressure to confine the radio source.

Fabbiano, G.↗
NASA NTRS2001

Wavelength Division Multiplexing Scheme for Radio-Frequency Single Electron Transistors

We describe work on a wavelength division multiplexing scheme for radio-frequency single electron transistors. We use a network of resonant impedance matching circuits to direct applied rf carrier waves to different transistors depending on carrier frequency. Using discrete components, we made a two-channel demonstration of this concept and successfully reconstructed input signals with small levels of cross coupling. A lithographic version of the rf circuits had measured parameters in agreement with electromagnetic modeling, with reduced cross capacitance and inductance, and should allow 20 to 50 channels to be multiplexed.

Stevenson, Thomas R.↗
NASA NTRS1995

Ulysses-ARTEMIS radio observation of energetic flare electron

Type 3 radio bursts allow us to follow energetic electrons ejected by solar flares into the interplanetary medium, even when the observer is far away from the electrons. The emission frequency f(sub p) is related to the ambient density n(sub e) by f(sub p) varies as the square root of n(sub e), and as a function of the distance r to the sun we have approximately n(sub e) varies as r(exp -2); as a consequence, on a 1/f - t dynamic spectrum type 3 bursts appear as nearly straight traces, whose slope gives an estimation of the source speed. We used the data of the URAP radio receiver on Ulysses (1-1000 kHz), observing sources in the solar wind, and the ground data of the ARTEMIS spectrograph (100-500 MHz), observing sources of the corona, over the years 1991-1994. We found a surprisingly large number of excellent high-frequency - low-frequency associations. A type 3 burst group on ARTEMIS (10 to 100 bursts over 1 to 10 minutes) typically gives rise to one isolated burst on Ulysses. As bursts often start in high frequencies during the maximum phase of flares, this demonstrates in a very convincing manner that some of the flare electrons themselves make it all the way to the interplanetary medium. We discuss decorrelation cases in the context of geometrical configuration between the active region and the two observing sites. We also study how apparent electron speeds vary with the distance to the sun.

Hoang, S.↗
NASA NTRS1974

Monitoring the presence of foreign bodies in the equipment

The methods for monitoring the presence of foreign bodies in radio electronic equipment are discussed. Descriptions of the structural design under the operating principle of the device for detecting foreign bodies weighing to 0.0026 grams are given.

Breslavets, A. V.↗
NASA NTRS1979

Rocket radio measurement of electron density in the nighttime ionosphere

One experimental technique based on the Faraday rotation effect of radio waves is presented for measuring electron density in the nighttime ionosphere at midlatitudes. High frequency linearly-polarized radio signals were transmitted to a linearly-polarized receiving system located in a spinning rocket moving through the ionosphere. Faraday rotation was observed in the reference plane of the rocket as a change in frequency of the detected receiver output. The frequency change was measured and the information was used to obtain electron density data. System performance was evaluated and some sources of error were identified. The data obtained was useful in calibrating a Langmuir probe experiment for electron density values of 100/cu cm and greater. Data from two rocket flights are presented to illustrate the experiment.

Gilchrist, B. E.↗
DOE OSTI2021

Electron dynamics in radio frequency magnetron sputtering argon discharges with a dielectric target

Abstract We demonstrate a self-consistent and complete description of electron dynamics in a typical electropositive radio frequency magnetron sputtering (RFMS) argon discharge with a dielectric target. The electron dynamics, including the electron power absorption dynamics in one radio frequency (RF) period, is studied via a fully kinetic 2d3v particle-in-cell/Monte Carlo collision (PIC/MCC) electrostatic simulation. The interplay between the fundamental plasma parameters is analyzed through their spatiotemporal dynamics. Due to the influence of magnetic trap on the electron transport, a spatially dependent charging that perturbs the electric potential is observed on the dielectric target surface, resulting in a spatially dependent ion energy distribution along the target surface. The E × B drift-to-discharge current ratio is in approximate agreement with Bohm diffusion. The electron power absorption can be primarily decoupled into the positive Ohmic power absorption in the bulk plasma region and the negative pressure-induced power absorption near the target surface. Ohmic power absorption is the dominant electron power absorption mechanism, mostly contributed by the azimuthal electron current. The power absorption due to electron inertial effects is negligible on time-average. Both the maximum power absorption and dissipation of electrons appear in the bulk plasma region during the second half of the RF period, implying a strong electron trapping in magnetron discharges. The contribution of secondary electrons is negligible under typical RFMS discharge conditions.

Physics↗