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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2016

Photonic Integrated Circuit (PIC) Device Structures: Background, Fabrication Ecosystem, Relevance to Space Systems Applications, and Discussion of Related Radiation Effects

Electronic integrated circuits are considered one of the most significant technological advances of the 20th century, with demonstrated impact in their ability to incorporate successively higher numbers transistors and construct electronic devices onto a single CMOS chip. Photonic integrated circuits (PICs) exist as the optical analog to integrated circuits; however, in place of transistors, PICs consist of numerous scaled optical components, including such "building-block" structures as waveguides, MMIs, lasers, and optical ring resonators. The ability to construct electronic and photonic components on a single microsystems platform offers transformative potential for the development of technologies in fields including communications, biomedical device development, autonomous navigation, and chemical and atmospheric sensing. Developing on-chip systems that provide new avenues for integration and replacement of bulk optical and electro-optic components also reduces size, weight, power and cost (SWaP-C) limitations, which are important in the selection of instrumentation for specific flight projects. The number of applications currently emerging for complex photonics systems-particularly in data communications-warrants additional investigations when considering reliability for space systems development. This Body of Knowledge document seeks to provide an overview of existing integrated photonics architectures; the current state of design, development, and fabrication ecosystems in the United States and Europe; and potential space applications, with emphasis given to associated radiation effects and reliability.

Body of Knowledge (BOK)↗
NASA NTRS2004

Assurance Against Radiation Effects on Electronics

Contents include the following: The Space Radiation Environment. The Effects on Electronics. The Environment in Action. NASA Approaches to Commercial Electronics: the mission mix, flight projects, and proactive research. Final Thoughts: atomic interactions, direct ionization, interaction with nucleus.

LaBel, Kenneth A.↗
NASA NTRS2017

Tutorial: Radiation Effects in Electronic Systems

This tutorial presentation will give an overview of radiation effects in electrical, electronic, and electromechanical (EEE) components as it applies to civilian space systems of varying size and complexity. The natural space environment presents many unique threats to electronic systems regardless of where the systems operate from low-Earth orbit to interplanetary space. The presentation will cover several topics, including: an overview and introduction to the applicable space radiation environments common to a broad range of mission designs; definitions and impacts of effects due to impinging particles in the space environment e.g., total ionizing dose (TID), total non-ionizing dose (TNID), and single-event effects (SEE); and, testing for and evaluation of TID, TNID, and SEE in EEE components.

total non-ionizing dose (TNID)↗
NASA NTRS1987

More on Effects of Radiation on Electronics

Third volume in series of bibliographies on radiation effects on electronics covers years 1982 and 1983. Volume summarizes literature on effects of total doses of radiation and of test environments.

Bouquet, Frank L.↗
NASA NTRS2010

Radiation Beamline Testbeds for the Simulation of Planetary and Spacecraft Environments for Human and Robotic Mission Risk Assessment

The Center for Radiation Engineering and Science for Space Exploration (CRESSE) at Prairie View A&M University, Prairie View, Texas, USA, is establishing an integrated, multi-disciplinary research program on the scientific and engineering challenges faced by NASA and the international space community caused by space radiation. CRESSE focuses on space radiation research directly applicable to astronaut health and safety during future long term, deep space missions, including Martian, lunar, and other planetary body missions beyond low earth orbit. The research approach will consist of experimental and theoretical radiation modeling studies utilizing particle accelerator facilities including: 1. NASA Space Radiation Laboratory (NSRL) at Brookhaven National Laboratory; 2. Proton Synchrotron at Loma Linda University Medical Center; and 3. Los Alamos Neutron Science Center (LANSCE) at Los Alamos National Laboratory. Specifically, CRESSE investigators are designing, developing, and building experimental test beds that simulate the lunar and Martian radiation environments for experiments focused on risk assessment for astronauts and instrumentation. The testbeds have been designated the Bioastronautics Experimental Research Testbeds for Environmental Radiation Nostrum Investigations and Education (BERT and ERNIE). The designs of BERT and ERNIE will allow for a high degree of flexibility and adaptability to modify experimental configurations to simulate planetary surface environments, planetary habitats, and spacecraft interiors. In the nominal configuration, BERT and ERIE will consist of a set of experimental zones that will simulate the planetary atmosphere (Solid CO2 in the case of the Martian surface.), the planetary surface, and sub-surface regions. These experimental zones can be used for dosimetry, shielding, biological, and electronic effects radiation studies in support of space exploration missions. BERT and ERNIE are designed to be compatible with the experimental areas associated with the above facilities. CRESSE has broad expertise in space radiation in the areas of space radiation environment modeling, Monte-Carlo radiation transport modeling, space radiation instrumentation and dosimetry, radiation effects on electronics, and multi-functional composite shielding materials. The BERT and ERNIE testbeds will be utilized in individual and collaborative research incorporating this expertise. The research goal is to maximize the technical readiness level (TRL) of radiation instrumentation for human and robotic missions, optimizing the return value of CRESSE for NASA exploration and international co-operative missions. Outcomes and knowledge from research utilizing BERT and ERNIE will be applied to a variety of scientific and engineering disciplines vital for safe and reliable execution of future space exploration missions, which can be negatively impacted by the space radiation environment. The testbeds will be central to a variety of university educational activities and educational goals of NASA. Specifically, BERT and ERNIE will enhance educational opportunities in science, technology, engineering and mathematics (STEM) disciplines for engineering and science students at PVAMU, a historically black college/university. Preliminary data on prototype testbed configurations, including simulated lunar regolith (JSC-1A stimulant based on Apollo 11 samples), regolith/polyethylene composites, and dry ice, will be presented to demonstrate the usefulness of BERT and ERNIE in radiation beam line experiments.

Wilkins, Richard↗
NASA NTRS1989

A (13)C NMR analysis of the effects of electron radiation on graphite/polyetherimide composites

Initial investigations have been made into the use of high resolution nuclear magnetic resonance (NMR) for the characterization of radiation effects in graphite and Kevlar fibers, polymers, and the fiber/matrix interface in graphite/polyetherimide composites. Sample preparation techniques were refined. Essential equipment has been procured. A new NMR probe was constructed to increase the proton signal-to-noise ratio. Problem areas have been identified and plans developed to resolve them.

Ferguson, Milton W.↗
NASA NTRS1987

More Abstracts on Effects of Radiation on Electronic Devices

Second volume of bibliography summarizes literature on radiation effects on new electronic devices. Includes those of protons, electrons, neutrons, gamma rays, and cosmic rays at energies up to about 20 GeV. Volume contains 219 abstracts from unclassified sources. Organized into four sections: dose-rate effects, new technology, post-irradiaton effects, and test environments.

Bouquet, Frank L.↗
DOE OSTI2023

Proton radiation effects on electronic defect states in MOCVD-grown (010) β -Ga 2 O 3

The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown (010) β-Ga 2 O 3 Schottky diodes is presented. It is found that after a 10.8 × 10 13 cm –2 proton fluence the Schottky barrier height of (1.40 ± 0.05 eV) and the ideality factor of (1.05 ± 0.05 ) are unaffected. Capacitance–voltage extracted net ionized doping curves indicate a carrier removal rate of 268 ± 10 cm –1 . The defect states responsible for the observed carrier removal are studied through a combination of deep level transient and optical spectroscopies (DLTS/DLOS) as well as lighted capacitance–voltage (LCV) measurements. The dominating effect on the defect spectrum is due to the E c -2.0 eV defect state observed in DLOS and LCV. This state accounts for ~75 % of the total trap introduction rate and is the primary source of carrier removal from proton irradiation. Of the DLTS detected states, the E c -0.72 eV state dominated but had a comparably smaller contribution to the trap introduction. These two traps have previously been correlated with acceptor-like gallium vacancy-related defects. Several other trap states at E C -0.36, E C -0.63, and E C -1.09 eV were newly detected after proton irradiation, and two pre-existing states at E C -1.2 and E C -4.4 eV showed a slight increase in concentration after irradiation, together accounting for the remainder of trap introduction. However, a pre-existing trap at E c -0.40 eV was found to be insensitive to proton irradiation and, therefore, is likely of extrinsic origin. Furthermore, the comprehensive defect characterization of 1.8 MeV proton irradiation damage can aid the modeling and design for a range of radiation tolerant devices.

42 ENGINEERING↗
NASA NTRS1987

Spectroscopic comparison of effects of electron radiation on mechanical properties of two polyimides

The differences in the radiation durabilities of two polyimide materials, Du Pont Kapton and General Electric Ultem, are compared. An explanation of the basic mechanisms which occur during exposure to electron radiation from analyses of infrared (IR) and electron paramagnetic resonance (EPR) spectroscopic data for each material is provided. The molecular model for Kapton was, in part, established from earlier modeling for Ultem (pp. 1293-1298 of IEEE Transactions on Nuclear Science, December 1984). Techniques for understanding the durability of one complex polymer based on the understanding of a different and equally complex polymer are demonstrated. The spectroscopic data showed that the primary radiation-generated change in the tensile properties of Ultem (a large reduction in tensile elongation) was due to crosslinking, which followed the capture by phenyl radicals of hydrogen atoms removed from gem-dimethyl groups. In contrast, the tensile properties of Kapton remained unchanged because radical-radical recombination, a self-mending process, took place.

Long, Edward R., Jr.↗
NASA NTRS1978

Long-term radiation effects on GaAs solar cell characteristics

This report investigates preliminary design considerations which should be considered for a space experiment involving Gallium Arsenide (GaAs) solar cells. The electron radiation effects on GaAs solar cells were conducted in a laboratory environment, and a statistical analysis of the data is presented. In order to augment the limited laboratory data, a theoretical investigation of the effect of radiation on GaAs solar cells is also developed. The results of this study are empirical prediction equations which can be used to estimate the actual damage of electrical characteristics in a space environment. The experimental and theoretical studies also indicate how GaAs solar cell parameters should be designed in order to withstand the effects of electron radiation damage.

Heinbockel, J. H.↗