Effect of radiation defects on grain boundary evolution under shock loading
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36 MATERIALS SCIENCE↗
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Results for “Radiation defect”
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Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga{sub i}) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga{sub i}-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed.
36 MATERIALS SCIENCE↗
Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers
Mathematical simulation of the cascade of displacements in SiC is used to consider the specific features of Frenkel-pair generation upon the scattering of 8- and 15-MeV protons. The distribution histograms of energies acquired not only by primary knocked-out atoms, but also by recoil atoms generated in displacement cascades, are calculated. An analysis of the histograms considers two energy ranges. In the first range of “low” energies, the spontaneous recombination of genetically related Frenkel pairs is dominant. Recoil atoms in the second range have a higher energy, which enables these atoms to leave the spontaneousrecombination zone and dissociate into isolated components. The compensation of lightly doped n- and p-4H-SiC samples grown by gas-phase epitaxy is experimentally studied under irradiation with 8- and 15-MeV protons. The carrier removal rates are measured. The calculated and experimental data are compared and estimates are obtained for the size of the spontaneous-recombination zone.
36 MATERIALS SCIENCE↗
Toward understanding radiation defects in a ternary InGaAs alloy
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Schultz, Peter Andrew [Sandia National Laboratorie↗
Radiation defect and impurity atom interaction in proton bombarded silicon
Association between vacancies and aluminum atoms in proton bombarded silicon with boron impurity
Franks, R. K.↗
Study of interaction among silicon, lithium, oxygen and radiation-induced defects for radiation-hardened solar cells
In order to improve reliability and the useful lifetime of solar cell arrays for space use, a program was undertaken to develop radiation-hardened lithium-doped silicon solar cells. These cells were shown to be significantly more resistant to degradation by ionized particles than the presently used n-p nonlithium-doped silicon solar cells. The results of various analyses performed to develop a more complete understanding of the physics of the interaction among lithium, silicon, oxygen, and radiation-induced defects are presented. A discussion is given of those portions of the previous model of radiation damage annealing which were found to be in error and those portions which were upheld by these extensive investigations.
Berman, P. A.↗
Nature of radiation-induced defects in quartz
Although quartz (α-form) is a mineral used in numerous applications wherein radiation exposure is an issue, the nature of the atomistic defects formed during radiation-induced damage has not been fully clarified. Especially, the extent of oxygen vacancy formation is still debated, which is an issue of primary importance as optical techniques based on charged oxygen vacancies have been utilized to assess the level of radiation damage in quartz. In this paper, molecular dynamics simulations are applied to study the effects of ballistic impacts on the atomic network of quartz. We show that the defects that are formed mainly consist of over-coordinated Si and O, as well as Si–O connectivity defects, e.g., small Si–O rings and edge-sharing Si tetrahedra. Oxygen vacancies, on the contrary, are found in relatively low abundance, suggesting that characterizations based on E′ centers do not adequately capture radiation-induced structural damage in quartz. Finally, we evaluate the dependence on the incident energy, of the amount of each type of the point defects formed, and quantify unambiguously the threshold displacement energies for both O and Si atoms. These results provide a comprehensive basis to assess the nature and extent of radiation damage in quartz.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Effects of Radiation-Induced Defects on Corrosion
The next generation of nuclear reactors will expose materials to conditions that, in some cases, are even more extreme than those in current fission reactors, inevitably leading to new materials science challenges. Radiation-induced damage and corrosion are two key phenomena that must be understood both independently and synergistically, but their interactions are often convoluted. In the light water reactor community, a tremendous amount of work has been done to illuminate irradiation-corrosion effects, and similar efforts are under way for heavy liquid metal and molten salt environments. While certain effects, such as radiolysis and irradiation-assisted stress corrosion cracking, are reasonably well established, the basic science of how irradiation-induced defects in the base material and the corrosion layer influence the corrosion process still presents many unanswered questions. In this review, we summarize the work that has been done to understand these coupled extremes, highlight the complex nature of this problem, and identify key knowledge gaps.
36 MATERIALS SCIENCE↗
Radiation-produced defects in germanium: Experimental data and models of defects
The problem of radiation-produced defects in n-Ge before and after n → p conversion is discussed in the light of electrical data obtained by means of Hall effect measurements as well as Deep Level Transient Spectroscopy. The picture of the dominant radiation defects in irradiated n-Ge before n → p conversion appears to be complicated, since they turn out to be neutral in n-type material and unobserved in the electrical measurements. It is argued that radiation-produced acceptors at ≈E{sub C} – 0.2 eV previously ascribed to vacancy-donor pairs (E-centers) play a minor role in the defect formation processes under irradiation. Acceptor defects at ≈E{sub V} + 0.1 eV are absolutely dominating in irradiated n-Ge after n → p conversion. All the radiation defects under consideration were found to be dependent on the chemical group-V impurities. Together with this, they are concluded to be vacancy-related, as evidenced positron annihilation experiments. A detailed consideration of experimental data on irradiated n-Ge shows that the present model of radiation-produced defects adopted in literature should be reconsidered.
36 MATERIALS SCIENCE↗
The influence of Σ3 twin boundaries on the formation of radiation-induced defect clusters in nanotwinned Cu
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nuclear (including radiation effects), defects, me↗
Review of radiation-induced defects in GaAs
Radiation-resilient optoelectronic materials are highly desired in space and nuclear applications, and understanding the relevant defects and electronic processes in those materials is crucial for both current and next-generation applications. GaAs is a prototypical semiconductor that serves as a foundational system for describing and understanding optoelectronic devices. In this review, both experimental studies and molecular dynamics (MD) simulations of irradiated GaAs are reviewed, with particular emphasis on the deep-level transient spectroscopy, irradiation-induced amorphization zones, and MD predictions of damage structures. The MD results are also compared to predictions of the non-ionized energy-loss model. Recent theoretical studies, in particular, density functional theory based calculations on the simple intrinsic defects and defect clusters in GaAs, are also reviewed. These defects have an important role in dictating the evolution of GaAs in radiation damage environments, as they impact the coupled dynamics of charge carriers. Finally, possible gaps and challenges toward the general understanding of defect evolution in GaAs are discussed.
36 MATERIALS SCIENCE↗
Cathodoluminescence study of radiative interface defects in thermally grown SiO{sub 2}/4H-SiC(0001) structures
Radiative defects in thermally grown SiO{sub 2}/4H-SiC(0001) structures and their location in depth were investigated by means of cathodoluminescence spectroscopy. It was found that while luminescence peaks ascribed to oxygen vacancy and nonbridging oxygen hole centers were observed both from thermal oxides grown on (0001) Si-face and C-face surfaces as with thermal oxides on Si, intense yellow luminescence at a wavelength of around 600 nm was identified only from the oxide interface on the Si-face substrate regardless of the oxide thickness and dopant type. Possible physical origins of the radiative centers localized near an oxide interface of a few nm thick are discussed on the basis of visible light emission from Si backbone structures.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
The status of defect studies pertinent to radiation damage in silicon solar cells
The status of radiation defects in silicon is briefly reviewed and discussed in relation to the problem of radiation tolerance of silicon solar cells in space.
Corbett, J. W.↗
Radiation Effects in Innovative Structural Materials
The extreme radiation environments and demanding structural conditions of next-generation fission and proposed fusion reactors will require high performance materials with very high radiation resistance. Although conventional structural materials such as ferritic/ martensitic steels offer several attractive features, there is value in exploring alternative materials systems that may offer unprecedented radiation stability while also offering good thermomechanical properties. As noted elsewhere, options for designing radiation resistance include (a) the traditional approach of introducing a very high sink strength for recombination of radiation-induced vacancies and interstitials (e.g., Ti-modified stainless steels or 'nano-cluster-strengthened ferritic alloys', (b) utilizing materials with immobile vacancies at the operating temperature (e.g., silicon carbide), and (c) utilizing certain classes of materials that inherently exhibit superior resistance to radiation defect retention and accumulation (e.g., ferritic steels). Three relatively new but promising structural materials systems were selected for investigation, based on their favorable unirradiated mechanical properties and potential for good stability under irradiation: High entropy alloys (HEAs), bulk metallic glass (BMG), and MAX phase ceramics. The high configurational entropy in HEAs might alter point defect (solute and radiation defects) diffusion processes, thus potentially enhancing the recombination of radiation-produced damage. Therefore, HEAs offer the potential of a new class of materials for radiation resistance category (c) mentioned previously. A variety of BMGs such as Zr{sub 52.5}Cu{sub 17.9}Ni{sub 14.6}Al{sub 10}Ti{sub 5} offer good mechanical properties including fracture toughness values that may exceed 100 MPa-m{sup 1/2} and near net shape fabrication potential. The lack of crystallinity in BMGs prohibits the formation of conventional Frenkel pair defects under irradiation and therefore offer the possibility of another new material system for radiation resistance category (c). MAX phase ceramics (e.g., Ti{sub 3}SiC{sub 2}, Ti{sub 3}AlC{sub 2}, Ti{sub 2}AlC) have good mechanical properties and contain a nano-laminate structure that could provide a very high point defect sink strength. Due to their refractory nature, many of the MAX phase ceramics may exhibit negligible vacancy mobility up to high temperatures. Therefore, MAX phase ceramics offer the potential to provide radiation resistance in either categories (a) and (b), depending on the operating temperature. For this study, a novel 27%Fe-27%Mn-28%Ni-18%Cr single phase face centered cubic high entropy alloy was synthesized that exhibited good strength and ductility over a wide temperature range. Zr{sub 52.5}Cu{sub 17.9}Ni{sub 14.6}Al{sub 10}Ti{sub 5} (BAM-11) was selected as a prototypic advanced BMG. Several MAX phase ceramics (e.g., Ti{sub 3}SiC{sub 2}, Ti{sub 3}AlC{sub 2}, Ti{sub 2}AlC) that have good unirradiated thermal and mechanical properties were also investigated. The irradiation damage behaviors of these three novel materials systems have been studied after fission neutron at ∼75 deg. C up to 1 dpa and Ni ion irradiation at 25- 700 deg. C up to 30 dpa (lower temperatures and doses for the BMGs). All three sets of materials generally exhibited good radiation stability within certain temperature regimes. For example, the BMG exhibited only minor (<10%) change in strength that appeared to saturate after a dose of ∼1 dpa. A key shortcoming of current BMGs are that they can not be used at temperatures >>300 deg. C due to glass to crystalline transition at elevated temperature. The MAX phase ceramics irradiated at 400-700 deg. C appeared to be in the 'low temperature' regime where vacancies are immobile and therefore the radiation hardening saturated at relatively low doses. The Ti{sub 3}SiC{sub 2} MAX phase exhibited the best overall radiation stability over a wide temperature range. The HEA exhibited fine scale dislocation loop formation, no observable cavity swelling and reduced amounts of Cr depletion compared to traditional austenitic Fe-Cr-Ni alloys after ion irradiation, which suggests suppressed point defect and solute diffusion behavior. (authors)
36 MATERIALS SCIENCE↗
Band-edge Engineering to Eliminate Radiation-Induced Defect States in Perovskite Scintillators
Under radiative environments such as extended hard X- or γ-rays, degradation of scintillation performance is often due to irradiation-induced defects. To overcome the effect of deleterious defects, novel design mitigation strategies are needed to identify and design more resilient materials. The potential for band-edge engineering to eliminate the effect of radiation-induced defect states in rare-earth-doped perovskite scintillators is explored, taking Ce 3+ -doped LuAlO 3 as a model material system, using density functional theory (DFT)-based DFT + U and hybrid Heyd–Scuseria–Ernzerhof (HSE) calculations. Furthermore, from spin-polarized hybrid HSE calculations, the Ce 3+ activator ground-state 4f position is determined to be 2.81 eV above the valence band maximum in LuAlO 3 . Except for the oxygen vacancies which have a deep level inside the band gap, all other radiation-induced defects in LuAlO 3 have shallow defect states or are outside the band gap, that is, relatively far away from either the 5d 1 or the 4f Ce 3+ levels. Finally, we examine the role of Ga doping at the Al site and found that LuGaO 3 has a band gap that is more than 2 eV smaller than that of LuAlO 3 . Specifically, the lowered conduction band edge envelopes the defect gap states, eliminating their potential impact on scintillation performance and providing direct theoretical evidence for how band-edge engineering could be applied to rare-earth-doped perovskite scintillators.
36 MATERIALS SCIENCE↗