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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Gradatim Ferociter : Exploring the Grain Size Stability of Heterogeneous Copper in Thermal Mechanical and Radiation Environments.
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Characterizing the Radiation Environment in the Fermilab MeV Test Area Enclosure during Beam Operation
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Classifying topology in photonic crystal slabs despite their radiative environment
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Data-driven Compact Models for Devices and Circuits: A System Identification Approach for Non-intrusive Reduced Order Modeling of Normal and Radiation Environments in Microelectronics
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Development of a Robust Reference Electrode in Aggressive Chemical and Radiation Environments in the Hanford Waste Tanks– 26213 [SLIDES]
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Design and development of equi-atomic refractory High Entropy Alloys for use in radiation environments
Development of new structural materials that can withstand the extreme environments of nuclear reactors where the materials are exposed to high dose rate of ~ 30 200 dpa, high temperatures of the order of 500 1000 o C and tens of years of operation is vital for exploiting the “smallest carbon footprint energy source” to its fullest, in order to deal with the energy crisis worldwide. Recently, HEAs have shown superior irradiation properties over conventional alloys like higher resistance to defect formation, lower void swelling, limited irradiation hardening and higher microstructural stability under irradiation, making them potential structural material candidates for reactors. Proper characterization and testing of these materials are essential before they can replace the conventional alloys.
Radiolytic Evaluation of 3,4,3-LI(1,2-HOPO) in Aqueous Solutions
We report the octadentate hydroxypyridinone ligand 3,4,3-LI(1,2-HOPO) (abbreviated as HOPO) has been identified as a promising candidate for both chelation and f-element separation technologies, two applications that require optimal performance in radiation environments. However, the radiation robustness of HOPO is currently unknown. Here, we employ a combination of time-resolved (electron pulse) and steady-state (alpha self-radiolysis) irradiation techniques to elucidate the basic chemistry of HOPO and its f-element complexes in aqueous radiation environments. Chemical kinetics were measured for the reaction of HOPO and its Nd(III) ion complex ([Nd III (HOPO)] - ) with key aqueous radiation-induced radical transients (eaq - , H · atom, and · OH and NO 3 · radicals). The reaction of HOPO with eaq - is believed to proceed via reduction of the hydroxypyridinone moiety, while transient adduct spectra indicate that reactions with the H · atom and · OH and NO 3 · radicals proceeded by addition to HOPO's hydroxypyridinone rings, potentially allowing for the generation of an extensive suite of addition products. Complementary steady-state 241 Am(III)-HOPO complex ([ 241 Am III (HOPO)] - ) irradiations showed the gradual release of 241 Am(III) ions with increasing alpha dose up to 100 kGy, although complete ligand destruction was not observed.
Saturn Radiation Dose Environment Characterization
To understand the environment where a time-resolved hard x-ray spectrometer (AXIOM) might be fielded, experiments and simulations were performed to analyze the radiation dose environment underneath the Saturn vacuum dome. Knowledge of this environment is critical to the design and placement of the spectrometer. Experiments demonstrated that the machine performance, at least in terms of on-axis dose, has not significantly changed over the decades. Simulations of the off-axis dose were performed to identify possible spectrometer locations of interest. The effects from the source and dome hardware as well as source distributions and angles of incidence on the radiation environment were also investigated. Finally, a unified radiation transport model was developed for two widely used radiation transport codes to investigate the off-axis dose profiles and the time-dependent x-ray energy spectrum. The demonstrated equivalence of the unified radiation transport model between the radiation transport codes allows the team to tie future time-dependent x-ray environment calculations to previous integral simulations for the Saturn facility.
Three-dimensional strain imaging of irradiated chromium using multi-reflection Bragg coherent diffraction
Abstract Radiation-induced materials degradation is a key concern in limiting the performance of nuclear materials. The formation of nanoscale void and gas bubble superlattices in metals and alloys under radiation environments can effectively mitigate radiation-induced damage, such as swelling and aid the development of next generation radiation tolerant materials. To effectively manage radiation-induced damage via superlattice formation, it is critical to understand the microstructural changes and strain induced by such superlattices. We utilize multi-reflection Bragg coherent diffraction imaging to quantify the full strain tensor induced by void superlattices in iron irradiated chromium substrate. Our approach provides a quantitative estimation of radiation-induced three-dimensional (3D) strain generated at the microscopic level and predicts the number density of defects with a high degree of sensitivity. Such quantitative evaluation of 3D strain in nuclear materials can have a major impact on predicting materials behavior in radiation environments and can revolutionize design of radiation tolerant materials.
Radiation Hardened Electronics for Reactor Environments
Radiation-hardened (rad-hard) electronics have been the shortcoming in nuclear sensing and instrumentation. Placing advanced sensors and associated electronics closer to a nuclear reactor core will improve reactor control and operation through increased signal accuracy, precision, and fidelity, resulting in safer, more efficient energy production. However, the extreme temperature and bombarding radiation environment of nuclear applications make research and development into electronics and electronic materials technologies essential to enabling improved safety, monitoring, and control of the existing nuclear reactor fleet and the next generation of reactors, including microreactors. To help the US Department of Energy (DOE) define a course for the Office of Nuclear Energy (NE)-funded rad-hard electronics research, Oak Ridge National Laboratory staff present this summary of the state-of-the-art (SOA) technology for the design and implementation of rad-hard electronics and systems, including research efforts and commercial offerings. A collection of technological gaps associated with reactor applications are compiled herein. Based on the radiation degradation mechanisms discussed in this report, along with the state-of-the-art summary survey and a compiled list of gaps, a high-level research plan of future NE funding direction was developed and is provided. This report outlines these activities and provides a summary of SOA electronics technology for rad-hard instrumentation in reactors, a list of the major technology gaps observed, and a draft plan for addressing the present and future needs of reactor instrumentation.
Radiation Effects on Line Heat Detection Cable AP Hot Cells Fire Detection at Brookhaven National Laboratory
Hot cells are used to safely shield workers from high radiation environments while allowing a process to take place within the cell's shielded enclosure, often with the assistance of remote manipulators. The interior of a cell may not be accessible by personnel for years at a time, either due to the lingering radiation environment or due to the constant use of these specialized pieces of equipment. High radiation levels are known to cause undesirable effects and changes to different materials in varying degrees. Selecting equipment for a radiation environment requires an evaluation of materials used (preferably completed assembles), to ensure all interactions of materials are known and ensure that the equipment will have a high degree of reliability and functionality over the intended life of the facility. Hot cells contain systems to support the primary purpose of the enclosure. Fire detection is one such support system. Safety of hot cell operations often establish limits on the amounts of combustibles with the cells, but the presence of some combustible materials is unavoidable. Fire detection is provided to quickly detect a fire and summon manual intervention before damage is too great. Detection may also be used to initiate fire suppression systems. As a safety system, fire detection needs to remain functional to protect the facility throughout the facility's life. Equally important is that the false alarms from the fire detection are minimized to retain confidence in the alarm system and avoid unnecessary interruptions in the hot cell operations. There are many types of fire detection available with various pros and cons. Not all types of fire detection are suited for hot cell application.
Active Compensation of Radiation Effects on Optical Fibers for Sensing Applications
Neutron and gamma irradiation is known to compact silica, resulting in macroscopic changes in refractive index (RI) and geometric structure. The change in RI and linear compaction in a radiation environment is caused by three well-known mechanisms: (i) radiation-induced attenuation (RIA), (ii) radiation-induced compaction (RIC), and (iii) radiation-induced emission (RIE). These macroscopic changes induce errors in monitoring physical parameters such as temperature, pressure, and strain in optical fiber-based sensors, which limit their application in radiation environments. We present a cascaded Fabry–Perot interferometer (FPI) technique to measure macroscopic properties, such as radiation-induced change in RI and length compaction in real time to actively account for sensor drift. The proposed cascaded FPI consists of two cavities: the first cavity is an air cavity, and the second is a silica cavity. The length compaction from the air cavity is used to deduce the RI change within the silica cavity. We utilize fast Fourier transform (FFT) algorithm and two bandpass filters for the signal extraction of each cavity. Inclusion of such a simple cascaded FPI structure will enable accurate determination of physical parameters under the test.
Response of GaN-Based Semiconductor Devices to Ion and Gamma Irradiation
GaN has electronic properties that make it an excellent material for the next generation of power electronics; however, its radiation hardening still needs further understanding before it is used in radiation environments. In this work we explored the response of commercial InGaN LEDs to two different radiation environments: ion and gamma irradiations. For ion irradiations we performed two types of irradiations at the Ion Beam Lab (IBL) at Sandia National Laboratories (SNL): high energy and end of range (EOR) irradiations. For gamma irradiations we fielded devices at the gamma irradiation facility (GIF) at SNL. The response of the LEDs to radiation was investigated by IV, light output and light output vs frequency measurements. We found that dose levels up to 500 krads do not degrade the electrical properties of the devices and that devices exposed to ion irradiations exhibit a linear and non- linear dependence with fluence for two different ranges of fluence levels. We also performed current injection annealing studies to explore the annealing properties of InGaN LEDs.
Surrogate modeling of Monte Carlo radiation transport with convolutional neural networks for shielding optimization
Here, we present a machine learning (ML)-based surrogate model using convolutional neural networks (CNN) designed to emulate the attenuation of neutron fields as they pass through various shielding materials. This model can compute the outgoing neutron flux almost instantaneously and achieves reasonable accuracy compared to traditional Monte Carlo (MC)-based codes, which are computationally intensive. This emulator alleviates the complexity of neutron radiation transport through shielding materials by reducing the dimensionality and enables shielding optimization for a known radiation environment. This optimization process, which would have taken an unrealistic timeline due to several complex radiation transport simulations, can now be achieved in minutes, thus increasing computational capabilities in radiation shielding assessment. We demonstrate the applications of this emulator in computing effective dose rates and optimizing shielding solutions for a heavy-ion accelerator facility, such as the Facility for Rare Isotope Beams, where secondary neutrons produced via beam interactions dominate the radiation environment.
Radiation Response of Ga 2 O 3 MOSFETs Probed via Focused Particle Beams
Gallium Oxide (Ga 2 O 3 ), particularly in its β-phase, is attracting lots of interest for high-power and high-voltage electronics due to its wide bandgap, high breakdown field, and thermal stability. This study investigates the radiation response of Ga 2 O 3 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under Total Ionizing Dose (TID) and Displacement Damage (DD) conditions, which are critical for applications in radiation environments. Utilizing a dual-beam Focused Ion Beam and Scanning Electron Microscope setup, microscale analysis of radiation effects on individual devices is performed. The findings reveal distinct behaviors under TID and DD + TID conditions, with TID leading to threshold voltage shifts due to trapped charges, while DD results in decreased drive current attributed to increased carrier scattering from lattice defects. Notably, it is demonstrated that the TID effect can be mitigated through dynamic threshold voltage adjustments and that the predicted TID from ions calculated by Monte Carlo simulations overestimates actual TID due to unaccounted charge yield effects. In conclusion, this research enhances the understanding of Ga2O3 MOSFETs' performance in harsh radiation environments, providing insights for the design of robust electronic devices for space and nuclear applications.
Radiation-resilient InAs quantum dot lasers
Displacement damage from particle radiation increases the threshold current of semiconductor lasers, impeding the deployment of photonic systems in harsh radiation environments. Replacing conventional quantum well (QW) gain regions with quantum dots (QDs) has been shown to suppress the radiation-induced increase in threshold current owing to three-dimensional carrier confinement, which effectively segregates charge carriers away from radiation-induced defects. However, radiation-induced change in threshold current is also affected by extrinsic design elements of a laser, such as photon lifetime, and therefore provides only a partial assessment of the radiation hardness. In this work, we advance the understanding of the radiation resiliency of InAs QD lasers by extracting the change in the nonradiative recombination rate after radiation exposure, which provides a more fundamental assessment of the intrinsic radiation hardness of InAs QD gain regions. We find that carriers that populate InAs QD states have a nonradiative recombination rate that is over an order-of-magnitude less sensitive to neutron radiation relative to carriers in InGaAsP QWs. InAs QD lasers must be designed such that carriers primarily occupy QD states, preventing carrier spillover into surrounding barrier layers to obtain the maximum benefit. Furthermore, we show that enhanced radiation hardness is observed in InAs QD lasers grown on both highly lattice-mismatched silicon substrates and native GaAs substrates, further broadening the appeal of InAs QD lasers as reliable light sources for photonic systems operating in harsh radiation environments.
In situ cryogenic characterization of proton damage in thick p-channel skipper CCDs
Skipper charge-coupled devices (CCDs) are an offshoot of standard silicon pixel detectors and are capable of performing repeated non-destructive charge measurements, enabling deeply sub-electron readout noise. This capability has opened the door to single-photon counting from the near-infrared ($\sim$1.1 $μ$m) to the soft X-ray (several keV), making these devices strong candidates for future astronomical instruments operating in the photon-starved limit. Furthermore, the p-channel architecture used to fabricate Skipper CCDs on n-type silicon has been demonstrated to have an increased hardness to the intense radiation environment of space. Building upon previous irradiation campaigns on room-temperature sensors, here we describe the first radiation-hardness tests of p-channel skipper CCDs at their cryogenic operating temperatures. We assess the performance of the floating-gate output stage and global CCD parameters (charge transfer inefficiency, dark current, hot pixels, and charge traps). We find that these devices maintain excellent performance after displacement damage doses equivalent to ${\sim}$10 years at the Earth/Sun L2 Lagrange point, demonstrating for the first time that these sensors remain radiation-hard in realistic deep-space thermal and radiation environments.