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At least 37 records · Page 2

A Single-Block TRL Test Fixture for the Cryogenic Characterization of Planar Microwave Components

The High-Temperature-Superconductivity (HTS) group of the RF Technology Branch, Space Electronics Division, is actively involved in the fabrication and cryogenic characterization of planar microwave components for space applications. This process requires fast, reliable, and accurate measurement techniques not readily available. A new calibration standard/test fixture that enhances the integrity and reliability of the component characterization process has been developed. The fixture consists of 50 omega thru, reflect, delay, and device under test gold lines etched onto a 254 microns (0.010 in) thick alumina substrate. The Thru-Reflect-Line (TRL) fixture was tested at room temperature using a 30 omega, 7.62 mm (300 mil) long, gold line as a known standard. Good agreement between the experimental data and the data modelled using Sonnet's em(C) software was obtained for both the return (S(sub 11)) and insertion (S( 21)) losses. A gold two-pole bandpass filter with a 7.3 GHz center frequency was used as our Device Under Test (DUT), and the results compared with those obtained using a Short-Open-Load-Thru (SOLT) calibration technique.

Mejia, M.↗

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗

Fusion-Enabled Pluto Orbiter and Lander

Direct Fusion Drive (DFD) is a unique fusion engine concept based on the Princeton Field-Reversed Configuration (PFRC) fusion reactor conceived by Dr. Sam Cohen of the Princeton Plasma Physics Laboratory. DFD would enable the Pluto orbiter and lander context mission and more broadly enable true "rapid transit" to outer-planet and near interstellar space. The truly game-changing levels of thrust and power in a modestly sized package could integrate with our current launch infrastructure while radically expanding the science capability of these missions. Our Phase I was our first funded work on the DFD, with previous work at PSS occurring only under internal R&D. We established the feasibility of our Pluto mission trajectories using straight-line and planar models, including a departure spiral from Earth and insertion at Pluto. We developed our first thrust and specific impulse model using the results of the UEDGE multi-fluid code. Our specific power model was improved. During this Phase II effort, we continued our efforts to increase the fidelity of the designs for the RF, magnet, and shielding subsystems. Dedicated thrust augmentation experiments were run on the PFRC experiment, using a supersonic gas puffing valve. For the first time, we analyzed the design of a closed-loop operation mode and estimated the hardware that would be required for a dual-mode engine. In an exciting new development, we have invented a new thermophotovoltaic thermal conversion method that has the potential to have efficiencies of a Brayton or Stirling system. Our report presents details of these analyses. Our roadmap to bringing DFD to flight predicts that with sufficient support, a first flight unit could be built by 2040. We anticipate that three machine generations are required before this point: a ~1 T PFRC-3 machine hitting new plasma temperature and density levels, a ~5 T PFRC-4 machine with first demonstration of D-3He fusion, and a flight. (The current experiment, PFRC-2, is limited to about 0.1 T). In order to achieve a flight in 2035-2040, the TRL of the supporting systems must be increased in parallel, including low mass radiators, cryogenic propellant storage, and large (>100 kW) thermal conversion systems. Fortunately, many of these systems are dual-use and are required for other technologies including fission systems, so DFD would contribute to and benefit from those programs. This NIAC support and the results of our work have led to multiple follow-on contracts. We won two NASA STTRs focused on DFD subsystems, one on the RF system and one on the superconducting magnets, and our magnet STTR is now midway through a Phase II. We will be receiving a superconducting test magnet for experiments at PPPL this summer. In addition, we won an ARPA-E OPEN grant; this is the first time that OPEN has included fusion technologies, and we are part of a cohort of three alternative fusion companies now supported directly by DOE. We are very optimistic that if we are able to meet our experimental milestones in the next 12-18 months, we will be competitive for additional DOE grants to build PFRC-3.

Propulsion↗

A superconducting time-variant filtering system.

Description of a laboratory test facility for studying the tracking capabilities of a superconducting time-varying filter system. An RF signal from an antenna is amplified and fed to a mixer; the IF signal modulates an optical diode, and the emitted light is directed through an optical system onto a high-purity high-resistance semiconductor terminating a quarter-wavelength stub in a lead-plated superconducting cavity. The resulting perturbation in the cavity resonant frequency is proportional to the signal modulation present in the light beam. The narrow-band superconducting cavity is thereby acting as a time-variant filter that tracks the instantaneous signal modulation. SNR improvement on the order of 25 dB can be obtained due to the noise rejection characteristics of such a modulation tracking filter.

Arndt, G. D.↗

Solid State Technology Branch of NASA Lewis Research Center Second Annual Digest, June 1989 - June 1990

A collection of papers and presentations authored by the branch between June 1989 and June 1990 is presented. The papers are organized into four sections. Section 1 deals with research in microwave circuits and includes full integrated circuits, the demonstration of optical/RF interfaces, and the evaluation of some hybrid circuitry. Section 2 indicates developments in coplanar waveguides and their use in breadboard circuits. Section 3 addresses high temperature superconductivity and includes: thin film deposition, transport measurement of film characteristics, RF surface resistant measurements, substrate permittivity measurements, measurements of microstrip line characteristics at cryogenic temperatures, patterning of superconducting films, and evaluation of simple passive microstrip circuitry based on YBaCuO films. Section 4 deals with carbon films, silicon carbide, GaAs/AlGaAs, HgCdTe, and other materials.

Source record↗

RF noise suppression using the photodielectric effect in semiconductors

Technique using photodielectric effect of semiconductor in high-Q superconductive cavity gives initial improvement of 2-4 db in signal-to-noise enhancement of conventional RF communication systems. Wide band signal plus noise can be transmitted through a narrow-band cavity due to parametric perturbation of the cavity frequency or phase.

Arndt, G. D.↗

Processing, electrical and microwave properties of sputtered Tl-Ca-Ba-Cu-O superconducting thin films

A reproducible fabrication process has been established for TlCaBaCuO thin films on LaAlO3 substrates by RF magnetron sputtering and post-deposition processing methods. Electrical transport properties of the thin films were measured on patterned four-probe test devices. Microwave properties of the films were obtained from unloaded Q measurements of all-superconducting ring resonators. This paper describes the processing, electrical and microwave properties of Tl2Ca1Ba2Cu2O(x) 2122-plane phase thin films.

Subramanyam, G.↗

Development work for a superconducting linear collider

For future linear e(+)e(-) colliders in the TeV range several alternatives are under discussion. The TESLA approach is based on the advantages of superconductivity. High Q values of the accelerator structures give high efficiency for converting RF power into beam power. A low resonance frequency for the RF structures can be chosen to obtain a large number of electrons (positrons) per bunch. For a given luminosity the beam dimensions can be chosen conservatively which leads to relaxed beam emittance and tolerances at the final focus. Each individual superconducting accelerator component (resonator cavity) of this linear collider has to deliver an energy gain of 25 MeV/m to the beam. Today s.c. resonators are in use at CEBAF/USA, at DESY/Germany, Darmstadt/Germany KEK/Japan and CERN/Geneva. They show acceleration gradients between 5 MV/m and 10 MV/m. Encouraging experiments at CEA Saclay and Cornell University showed acceleration gradients of 20 MV/m and 25 MV/m in single and multicell structures. In an activity centered at DESY in Hamburg/Germany the TESLA collaboration is constructing a 500 MeV superconducting accelerator test facility (TTF) to demonstrate that a linear collider based on this technique can be built in a cost effective manner and that the necessary acceleration gradients of more than 15 MeV/m can be reached reproducibly. The test facility built at DESY covers an area of 3.000 m2 and is divided into 3 major activity areas: (1) The testlinac, where the performance ofthe modular components with an electron beam passing the 40 m long acceleration section can be demonstrated. (2) The test area, where all individual resonators are tested before installation into a module. (3) The preparation and assembly area, where assembly of cavities and modules take place. We report here on the design work to reach a reduction of costs compared to actual existing superconducting accelerator structures and on the facility set up to reach high acceleration gradients in a reproducible way.

Matheisen, Axel↗

A 10 GHz Y-Ba-Cu-O/GaAs hybrid oscillator proximity coupled to a circular microstrip patch antenna

A 10 GHz hybrid YBCO/GaAs microwave oscillator proximity coupled to a circular microstrip antenna has been designed, fabricated, and characterized. The oscillator was a reflection mode type using a GaAs MESFET as the active element. The feedline, transmission lines, RF chokes, and bias lines were all fabricated from YBCO superconducting thin films on a 1 cm x 1 cm lanthanum aluminate substrate. The output feedline of the oscillator was wire bonded to a superconducting feedline on a second 1 cm x 1 cm lanthanum aluminate substrate, which was in turn proximity coupled to a circular microstrip patch antenna. Antenna patterns from this active patch antenna and the performance of the oscillator measured at 77 K are reported. The oscillator had a maximum output power of 11.5 dBm at 77 K, which corresponded to an efficiency of 10 percent. In addition, the efficiency of the microstrip patch antenna together with its high temperature superconducting feedline was measured from 85 K to 30 K and was found to be 71 percent at 77 K, increasing to a maximum of 87.4 percent at 30 K.

Rohrer, Norman J.↗

C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO3 substrate

A single-stage C-band superconductor/semiconductor hybrid field-effect transistor amplifier was designed, fabricated, and tested at 77 K. The large area (1 inch x 0.5 inches) high temperature superconducting Tl-Ba-Ca-Cu-O (TBCCO) thin film was rf magnetron sputtered onto a LaAlO3 substrate. The film had a transition temperature of about 92 K after it was patterned and etched. The amplifier showed a gain of 6 dB and a 3 dB bandwidth of 100 MHz centered at 7.9 GHz. An identical gold amplifier circuit was tested at 77 K, and these results are compared with those from the hybrid amplifier.

Nahra, J. J.↗

A 10 GHz Y-Ba-Cu-O/GaAs hybrid oscillator proximity coupled to a circular microstrip patch antenna

A 10 GHz hybrid Y-Ba-Cu-O / GaAs microwave oscillator proximity coupled to a circular microstrip antenna was designed, fabricated and characterized. The oscillator was a reflection mode type using a GaAs MESFET as the active element. The feedline, transmission lines, RF chokes, and bias lines were all fabricated from YBa2Cu3O(7-x) superconducting thin films on a 1 cm x 1 cm lanthanum aluminate substrate. The output feedline of the oscillator was wire bonded to a superconducting feedline on a second 1 cm x 1 cm lanthanum aluminate substrate, which was in turn proximity coupled to a circular microstrip patch antenna. Antenna patterns from this active patch antenna and the performance of the oscillator measured at 77 K are reported. The oscillator had a maximum output power of 11.5 dBm at 77 K, which corresponded to an efficiency of 10 percent. In addition, the efficiency of the microstrip patch antenna together with its high temperature superconducting feedline was measured from 85 K to 30 K and was found to be 71 percent at 77 4 increasing to a maximum of 87.4 percent at 30 K.

Rohrer, Norman J.↗

Low-Loss NbTiN Films for THz SIS Mixer Tuning Circuits

Recent results at 1 THz using normal-metal tuning circuits have shown that SIS mixers can work well up to twice the gap frequency of the junction material (niobium). However, the performance at 1 THz is limited by the substantial loss in the normal metal films. For better performance superconducting films with a higher gap frequency than niobium and with low RF loss are needed. Niobium nitride has long been considered a good candidate material, but typical NbN films suffer from high RF loss. To circumvent this problem we are currently investigating the RF loss in NbTiN films, a 15 K Tc compound superconductor, by incorporating them into quasi-optical slot antenna SIS devices.

Kooi, J. W.↗

Preparation and characteristics of superconducting cuprate thin films: Nd(2-x)Ce(x)CuO4 and substrated Bi-system

Characteristics of the electron-doped-type Nd(sub 2-x)Ce(sub x)CuO4 system and substituted Bi-system were studied using the high quality thin film samples grown by rf magnetron sputtering and/or subsequent heat treatment. The Nd(sub 2-x)Ce(sub x)CuO4 samples with excellent superconducting properties were obtained in thin films and their optical and X-ray photoelectron spectroscopy (XPS) studies were performed with regard to the Ce content and reducing treatment. Substituted BiSr-Ln-Cu-O thin films were prepared and growth conditions for Bi-system with 2-2-1-2 and 2-2-2-2 phases were found. Moreover, a new 2-2-1-2 phase in the simple Bi-Sr-Cu-O system was fabricated by thin film processing and 80 K superconductivity was obtained.

Adachi, H.↗

Electron Heating and Quasiparticle Tunnelling in Superconducting Charge Qubits

We have directly measured non-equilibrium quasiparticle tunnelling in the time domain as a function of temperature and RF carrier power for a pair of charge qubits based on the single Cooper-pair box, where the readout is performed with a multiplexed quantum capacitance technique. We have extracted an effective electron temperature for each applied RF power, using the data taken at the lowest power as a reference curve. This data has been fit to a standard T? electron heating model, with a reasonable correspondence with established material parameters.

Single Cooper Pair Box↗

Microwave Kinetic Inductance Detector with Selective Polarization Coupling

A conventional low-noise detector requires a technique to both absorb incident power and convert it to an electrical signal at cryogenic temperatures. This innovation combines low-noise detector and readout functionality into one device while maintaining high absorption, controlled polarization sensitivity, and broadband detection capability. The resulting far-infrared detectors can be read out with a simple approach, which is compact and minimizes thermal loading. The proposed microwave kinetic inductance detector (MKID) consists of three basic elements. The first is the absorptive section in which the incident power is coupled to a superconducting resonator at far-infrared frequency above its superconducting critical frequency (where superconductor becomes normal conductor). This absorber's shape effectively absorbs signals in the desired polarization state and is resonant at the radio frequency (RF) used for readout of the device. Control over the metal film used in the absorber allows realization of structures with either a 50% broadband or 100% resonance absorptance over a 30% fractional bandwidth. The second element is a microwave resonator - which is realized from the thin metal films used to make the absorber as transmission lines - whose resonance frequency changes due to a variation in its kinetic inductance. The resonator's kinetic inductance is a function of the power absorbed by the device. A low-loss dielectric (mono-crystalline silicon) is used in a parallel-plate transmission line structure to realize the desired superconducting resonators. There is negligible coupling among the adjacent elements used to define the polarization sensitivity of each detector. The final component of the device is a microwave transmission line, which is coupled to the resonator, and allows detection of changes in resonance frequency for each detector in the focal plane array. The spiral shape of the detector's absorber allows incident power with two polarizations to couple to the detector equally. A stepped impedance resonator was used that allows the incident power absorbed in the detecting membrane area to be uniformly distributed in the detector's transmission line at the RF readout frequency. This maximizes the sensitivity of the detector. The signal is read out via a frequency multiplexing technique that requires a minimum number of interface transmission lines for readout. This reduces the packaging complexity and coupling to the device's thermal environment.

Wollack, Edward↗

Superconducting terahertz mixer using a transition-edge microbolometer

We present a new device concept for a mixer element for THz frequencies. This uses a superconducting transition-edge microbridge biased at the center of its superconducting transition near 4.2 K. It is fed from an antenna or waveguide structure. Power from a local oscillator and an RF signal produce a temperature and resulting resistance variation at the difference frequency. The new aspect is the use of a very short bridge in which rapid (less than 0.1 ns) outdiffusion of hot electrons occurs. This gives large intermediate frequency (IF) response. The mixer offers about 4 GHz IF bandwidth, about 80 ohm RF resistive impedance, good match to the IF amplifier, and requires only 1-20 nW of local oscillator power. The upper RF frequency is determined by antenna or waveguide properties. Predicted mixer conversion efficiency is 1/8, and predicted double-sideband receiver noise temperatures are 260 and 90 K for transition widths of 0.1 and 0.5 Tc, respectively.

Prober, D. E.↗

Preparation and characteristics of superconducting cuprate thin films: Nd(2-x)Ce(x)CuO4 and substituted Bi-system

Characteristics of the electron-doped-type Nd(2-x)Ce(x)CuO4 systems and substituted Bi2(Sr,Ln)3Cu2Oy system were systematically studied using the high quality thin-film samples. The Nd(2-x)Ce(x)CuO4 thin films with various Ce concentrations, x, were prepared by RF magnetron sputtering on SrTiO3 heated at around 500 C. After subsequent annealing at 1100 C in air, the films showed the c-axis orientation normal to the substrates. By means of the reducing treatment (annealing in a vacuum), superconductivity was induced for the films with 0.14 is less than or equal to x is less than or equal to 0.18. The superconductivity and transport properties of the films were strongly affected by the reducing treatment. The x = 0.15 film exhibited a sharp superconducting transition with zero resistivity at 22 K, in consistent with the diamagnetic properties. The resistivity of the films was fairly low with metallic characteristics, and the sight of the Hall coefficient was negative in the normal state. On the other hand, the normal-state optical measurements showed that the undoped Nd2CuO4 is a semiconductor with a charge transfer gap of 1.3 eV, and that, when Ce ions were doped, a plasma reflection due to the free-carriers came to be seen with the plasma frequency of 1.07 eV for 0.14 is less than or equal to x is less than or equal to 0.18. Moreover, x ray photoemission study revealed that the Cu valence of the film decreased for 2(+) for x = 0 to 1(+) for x = 0.15. These physical properties are in contrast with those of hole-doped-type cuprate superconductors. Bi2(Sr,Ln)3Cu2Oy thin films were also prepared on MgO substrates heated at 600 to 700 C by similar methods. It was found that the growth conditions for Bi-systems with two CuO2 planes were different for each composition and species of lanthanoid in the films. Moreover, preparation of Bi-system with three CuO2 planes was very difficult when lanthanoid atoms were doped in the system. Their electric transport properties and x ray photoemission spectroscopy were investigated. Carrier concentration and Cu valence were discussed with regard to the superconductivity.

Adachi, H.↗