Engineering PapersSearch

SEARCH · Engineering Papers

Results for “RESISTOR”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2

Thin-film resistors used in functional electronic blocks

Vapor-deposited thin-film resistors replace diffused resistors in R-C tank circuits in a solid state electronic block. This allows an optimum parallel capacitance to be obtained for circuit applications requiring a high resistance and a low capacitance.

Source record

Resistor monitors transfer of liquid helium

Large resistance change of a carbon resistor at the liquid helium temperature distinguishes between the transfer of liquid helium and gaseous helium into a closed Dewar. The resistor should be physically as small as possible to reduce the heat load to the helium.

Hesketh, W. D.

Time-adjusted variable resistor

Timing mechanism was developed effecting extremely precisioned highly resistant fixed resistor. Switches shunt all or portion of resistor; effective resistance is varied over time interval by adjusting switch closure rate.

Heyser, R. C.

Vamistor resistor investigation

Results are presented of the failure investigation conducted on resistors produced by the Vamistor Divison, Wagner Electric Corporation. This failure investigation included; failure analyses, chemical and metallurgical analyses, failure mechanism studies, seal leak analyses, and nondestructive stress tests. The data, information, conclusions, and recommendation can be helpful in assessing current usage of these resistors.

Source record

Three-terminal shielded resistors for fast electrometers

The design of electrometer feedback resistors for use at frequencies up to the kilohertz range is discussed. It is shown experimentally that the addition of capacitive coupling between the electrometer output and the center of the feedback resistor, combined with suitable shielding, gives substantially better performance at high frequencies than is obtainable with more conventional designs.

Kendall, B. R. F.

Factors affecting laser-trim stability of thick film resistors

Various factors affecting precision of trim and resistor stability were considered. The influence of machine operating parameters on resistor performance was examined and quantified through statistically designed experiments for a Q switched YAG laser system. Laser kerf quality was studied by scanning electron microscopy and related to kerf isolation resistance measurements. A relatively simple production oriented, quality control test is proposed for rapid determination of kerf electrical stability. In addition, the effect of cut design and extent of trim on precision and stability were discussed.

Cote, R. E.

Improved switch-resistor packaging

Packaging approach makes resistors more accessible and easily identified with specific switches. Failures are repaired more quickly because of improved accessibility. Typical board includes one resistor that acts as circuit breaker, and others are positioned so that their values can be easily measured when switch is operated. Approach saves weight by using less wire and saves valuable panel space.

Redmerski, R. E.

Characterization of feedback resistors for cryogenic applications

Results are presented on the testing of feedback resistors selected for use in the transimpedance amplifiers (TIAs) in the Diffuse Infrared Background Experiment (DIRBE) to be flown on the NASA's Cosmic Background Explorer satellite planned for a launch in 1989. The resistors without encapsulation were found to be reliable as cryogenic circuit elements. Their resistance is sufficiently high (so that their Johnson noise does not dominate amplifier noise at the signal frequency), and they are sufficiently linear; no correction need to be made for signals up to 1.5 V, the 100,000 signal-to-noise level for the DIRBE, which covers most of the signals expected to be seen on the sky.

Lakew, B.

Electrostatic Discharge (ESD) Failures in Thin Film Resistors

Field failures of nichrome thin film resistors have been investigated recently for several pieces of space flight hardware. These failures have involved resistance shifts ranging from a few percent to complete open circuits. Failure analysis and duplication of these failures have revealed that the failures were caused by electrostatic discharge. The failure characteristics and the circuit conditions necessary for failure have been studied for several types of thin film resistors including nichrome and tantalum nitride resistive elements. The effects of latent damage and resistive pattern design will also be discussed.

Hull, Scott M.

Effects of Hydrogen on Tantalum Nitride Resistors

This document is a presentation about the investigation of drift reported in static frequency output from the analog circuit of a Multichannel Microwave Integrated circuit hybrid microelectronic filter module for space flight application. Electron Dispersion X-Ray Detector )EDAX) Analysis of the 35k ohm thin film Tantalum Nitride Chip resistors identified Palladium in the film. A catalytic reaction of Palladium and hydrogen produces mono atomic hydrogen. When the filter module cavities were filled with a 4 % hydrogen 96 % Nitrogen gas mixture at 25C and monitored the electrical performance for 24 hours. Some channels drifted in a similar pattern as the channel being investigated. Palladium was found on the resistors. The corrective actions taken are reviewed, which resulted in a stable circuit.

Weiler, James

Effects of Hydrogen on Tantalum Nitride Resistors

In this paper we report on observations of degradation of thin film Tantalum Nitride chip resistors in a hermetically sealed hybrid. The observations have been attributed to the reaction of residual Palladium with desorbed Hydrogen on the surface of the resistor film. Hydrogen gas has been observed to desorb from various sources within the sealed hybrid as a result of temperature elevation. The hydrogen gas has been reported to undergo a reaction with elements such as Platinum and Palladium causing device degradation in Gallium Arsenide Field Effect Transistors. The experimental procedures and data relating to this observation along with a discussion of available risk mitigation techniques will be presented.

Weiler, James

Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors

A sensitive resistor-based NO microsensor, with a wide detection range and a low detection limit, has been developed. Semiconductor microfabrication techniques were used to create a sensor that has a simple, robust structure with a sensing area of 1.10 ~ 0.99 mm. A Pt interdigitated structure was used for the electrodes to maximize the sensor signal output. N-type semiconductor indium tin oxide (ITO) thin film was sputter-deposited as a sensing material on the electrode surface, and between the electrode fingers. Alumina substrate (250 m in thickness) was sequentially used for sensor fabrication. The resulting sensor was tested by applying a voltage across the two electrodes and measuring the resulting current. The sensor was tested at different concentrations of NO-containing gas at a range of temperatures. Preliminary results showed that the sensor had a relatively high sensitivity to NO at 450 C and 1 V. NO concentrations from ppm to ppb ranges were detected with the low limit of near 159 ppb. Lower NO concentrations are being tested. Two sensing mechanisms were involved in the NO gas detection at ppm level: adsorption and oxidation reactions, whereas at ppb level of NO, only one sensing mechanism of adsorption was involved. The NO microsensor has the advantages of high sensitivity, small size, simple batch fabrication, high sensor yield, low cost, and low power consumption due to its microsize. The resistor-based thin-film sensor is meant for detection of low concentrations of NO gas, mainly in the ppb or lower range, and is being developed concurrently with other sensor technology for multispecies detection. This development demonstrates that ITO is a sensitive sensing material for NO detection. It also provides crucial information for future selection of nanostructured and nanosized NO sensing materials, which are expected to be more sensitive and to consume less power.

Xu, Jennifer C.