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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Polarization of gold in nanopores leads to ion current rectification

Biomimetic nanopores with rectifying properties are relevant components of ionic switches, ionic circuits, and biological sensors. Rectification indicates that currents for voltages of one polarity are higher than currents for voltages of the opposite polarity. Ion current rectification requires the presence of surface charges on the pore walls, achieved either by the attachment of charged groups or in multielectrode systems by applying voltage to integrated gate electrodes. Here we present a simpler concept for introducing surface charges via polarization of a thin layer of Au present at one entrance of a silicon nitride nanopore. In an electric field applied by two electrodes placed in bulk solution on both sides of the membrane, the Au layer polarizes such that excess positive charge locally concentrates at one end and negative charge concentrates at the other end. Consequently, a junction is formed between zones with enhanced anion and cation concentrations in the solution adjacent to the Au layer. This bipolar double layer together with enhanced cation concentration in a negatively charged silicon nitride nanopore leads to voltage-controlled surface-charge patterns and ion current rectification. The experimental findings are supported by numerical modeling that confirm modulation of ionic concentrations by the Au layer and ion current rectification even in low-aspect ratio nanopores. Lastly, our findings enable a new strategy for creating ionic circuits with diodes and transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Radiative thermal rectification using superconducting materials

Thermal rectification can be defined as an asymmetry in the heat flux when the temperature difference between two interacting thermal reservoirs is reversed. In this Letter, we present a far-field radiative thermal rectifier based on high-temperature superconducting materials with a rectification ratio up to 80%. This value is among the highest reported in literature. Two configurations are examined: a superconductor (Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8}) exchanging heat with (1) a black body and (2) another superconductor, YBa{sub 2}Cu{sub 3}O{sub 7} in this case. The first configuration shows a higher maximal rectification ratio. Besides, we show that the two-superconductor rectifier exhibits different rectification regimes depending on the choice of the reference temperature, i.e., the temperature of the thermostat. Presented results might be useful for energy conversion devices, efficient cryogenic radiative insulators engineering, and thermal logical circuits’ development.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Measurement and understanding of single-molecule break junction rectification caused by asymmetric contacts

The contact effects of single-molecule break junctions on rectification behaviors were experimentally explored by a systematic control of anchoring groups of 1,4-disubstituted benzene molecular junctions. Single-molecule conductance and I-V characteristic measurements reveal a strong correlation between rectifying effects and the asymmetry in contacts. Analysis using energy band models and I-V calculations suggested that the rectification behavior is mainly caused by asymmetric coupling strengths at the two contact interfaces. Fitting of the rectification ratio by a modified Simmons model we developed suggests asymmetry in potential drop across the asymmetric anchoring groups as the mechanism of rectifying I-V behavior. This study provides direct experimental evidence and sheds light on the mechanisms of rectification behavior induced simply by contact asymmetry, which serves as an aid to interpret future single-molecule electronic behavior involved with asymmetric contact conformation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Ratchet rectification effect on the translocation of a flexible polyelectrolyte chain

We report a three dimensional Langevin dynamics simulation of a uniformly charged flexible polyelectrolyte chain, translocating through an asymmetric narrow channel with periodically varying cross sections under the influence of a periodic external electric field. When reflection symmetry of the channel is broken, a rectification effect is observed with a favored direction for the chain translocation. For a given volume of the channel unit and polymer length, the rectification occurs below a threshold frequency of the external periodic driving force. We have also observed that the extent of the rectification varies non-monotonically with increasing molecular weight and the strength of geometric asymmetry of the channel. Observed non-monotonicity of the rectification performance has been interpreted in terms of a competition between two effects arising from the channel asymmetry and change in conformational entropy. An analytical model is presented with predictions consistent with the simulation results.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Radiofrequency sheath rectification on WEST: application of the sheath-equivalent dielectric layer technique in tokamak geometry *

Radiofrequency sheath rectification is a phenomenon relevant to the operation of Ion Cyclotron Range of Frequencies (ICRFs) actuators in tokamaks. Techniques to model the sheath rectification on 3D ICRF antenna geometries have only recently become available (Shiraiw et al 2023 Nucl. Fusion 63 026024; Beers et al 2021 Phys. Plasmas 28 093503). In this work, we apply the 'sheath-equivalent dielectric layer' technique, used previously only on linear devices (Beers et al 2021 Phys. Plasmas 28 103508), in tokamak geometry, computing rectified sheath potentials on the WEST ICRF antenna. Advancing the state of the art in sheath rectification modeling, we compute the sheath potentials not just on the limiters, but also on the Faraday Screen bars. The calculations show a peak rectified DC potential of 300 V on the limiters and 500 V on the Faraday screen. Assuming a typical sputtering yield curve, the RF sheath rectification increases the sputtering yield from the limiters by a factor of 2.6 w.r.t. the sputtering due to the non-rectified thermal sheath.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1984

Rectification of single and multiple frames of satellite scanner imagery using points and edges as control

Rectification of single and overlapping multiple scanner frames produced by such satellite-borne scanners as the LANDSAT MSS was carried out using a newly developed comprehensive parametric model. Tests with both simulated and real image data demonstrate conclusively that this model in general is superior to the widely used polynomial model, and that the simultaneous rectification of overlapping frames using least squares techniques yields a high accuracy than sngle frame rectification due to the inclusion of tie points between the image frames. Used to control, edges or lines, whic are much more likely to be found in images, can replace conventional control points and can easily be implemented into the least squares approach. An efficient algorithm for findng corresponding points in image paris was developed which can be used for determining tie points between image frames and thus increase the ecnomy of the whole rectification procedure.

Paderes, F. C., Jr.↗
DOE OSTI2023

Current rectification based on noncentrosymmetric quantum materials

Rectification is a process that converts electromagnetic fields into direct current (DC). Such a process underlies a wide range of technologies, including wireless communication, wireless charging, energy harvesting, and infrared detection. Existing rectifiers are mostly based on semiconductor diodes, with limited applicability to small voltages or high frequency inputs. Here, we present an alternative approach to current rectification that uses the electronic properties of quantum crystals without semiconductor junctions. We identify a new mechanism for rectification from skew scattering due to the chirality of itinerant electrons in time-reversal-invariant but inversion-breaking materials. Our calculations reveal large, tunable rectification effects in graphene multilayers and transition metal dichalcogenides. These effects can be used in high-frequency rectifiers by rational material design and quantum wavefunction engineering.

Isobe, Hiroki↗
DOE OSTI2024

Influence of the Dielectric Constant on the Ionic Current Rectification of Bipolar Nanopores

In this paper, we investigate how the dielectric constant, ϵ, of an electrolyte solvent influences the current rectification characteristics of bipolar nanopores. It is well recognized that bipolar nanopores with two oppositely charged regions rectify current when exposed to an alternating electric potential difference. Here, we consider dilute electrolytes with NaCl only and with a mixture of NaCl and charged nanoparticles. These systems are studied using two levels of description, all-atom explicit water molecular dynamics (MD) simulations and coarse-grained implicit solvent MD simulations. The charge density and electric potential profiles and current-voltage relationship predicted by the implicit solvent simulations with ϵ = 11.3 show good agreement with the predictions from the explicit water simulations. Under nonequilibrium conditions, the predictions of the implicit solvent simulations with a dielectric constant closer to the one of bulk water are significantly different from the predictions obtained with the explicit water model. Further, these findings are closely aligned with experimental data on the dielectric constant of water when confined to nanometric spaces, which suggests that ϵ decreases significantly compared to its value in the bulk. Moreover, the largest electric current rectification is observed in systems containing nanoparticles when ϵ = 78.8. Using enhanced sampling, we have shown that this larger rectification arises from the presence of a significantly deeper minimum in the free energy of the system with a larger ϵ, and when a negative voltage bias is applied. Since implicit solvent models and mean-field continuum theories are often used to design Janus membranes based on bipolar nanopores, this work highlights the importance of properly accounting for the effects of confinement on the dielectric constant of the electrolyte solvent. The results presented here indicate that the dielectric constant in implicit solvent simulations may be used as an adjustable parameter to approximately account for the effects of nanometric confinement on aqueous electrolyte solvents.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Thermal contact conductance as a method of rectification in bulk materials

A thermal rectifier that utilizes thermal expansion to directionally control interfacial conductance between two contacting surfaces is presented. The device consists of two thermal reservoirs contacting a beam with one rough and one smooth end. When the temperature of reservoir in contact with the smooth surface is raised, a similar temperature rise will occur in the beam, causing it to expand, thus increasing the contact pressure at the rough interface and reducing the interfacial contact resistance. However, if the temperature of the reservoir in contact with the rough interface is raised, the large contact resistance will prevent a similar temperature rise in the beam. As a result, the contact pressure will be marginally affected and the contact resistance will not change appreciably. Owing to the decreased contact resistance of the first scenario compared to the second, thermal rectification occurs. A parametric analysis is used to determine optimal device parameters including surface roughness, contact pressure, and device length. Modeling predicts that rectification factors greater than 2 are possible at thermal biases as small as 3 K. Lastly, thin surface coatings are discussed as a method to control the temperature bias at which maximum rectification occurs.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Is Molecular Rectification Caused by Asymmetric Electrode Couplings or by a Molecular Bias Drop?

In this study, we investigate possible causes of molecular rectification in electrode-molecule-electrode junctions. By using a simple model and simulated conductance histograms, we show that a molecular bias drop is responsible for rectification; conversely, asymmetric molecule electrode couplings do not directly result in rectification. Instead, the degree of coupling (a)symmetry can be observed in the line shapes of the conductance histograms used to experimentally assess the current voltage properties of such molecular junctions. Finally, more coupling asymmetry leads to less positively skewed histogram peaks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Structure–function relationships in single molecule rectification by N -phenylbenzamide derivatives

Here, we examine structure–function relationships in a series of N -phenylbenzamide (NPBA) derivatives by using computational modeling to identify molecular structures that exhibit both rectification and good conductance together with experimental studies of bias-dependent single molecule conductance and rectification behavior using the scanning tunneling microscopy break-junction technique. From a large number of computationally screened molecular diode structures, we have identified NPBA as a promising candidate, relative to the other structures that were screened. We demonstrate experimentally that conductance and rectification are both enhanced by functionalization of the NPBA 4-carboxamido-aniline moiety with electron donating methoxy groups, and are strongly correlated with the energy of the conducting frontier orbital relative to the Fermi level of the gold leads used in break-junction experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Terahertz rectification by periodic two-dimensional electron plasma

The physics of terahertz rectification by periodic two-dimensional electron plasma is discussed. Two different effects yielding terahertz rectification are studied: the plasmonic drag and plasmonic ratchet. Ultrahigh responsivity of terahertz rectification by periodic two-dimensional electron plasma in semiconductor heterostructures and graphene is predicted.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Thermal rectification of electrons in hybrid normal metal-superconductor nanojunctions

We theoretically investigate heat transport in hybrid normal metal-superconductor (NS) nanojunctions focusing on the effect of thermal rectification. We show that the heat diode effect in the junction strongly depends on the transmissivity and the nature of the NS contact. Thermal rectification efficiency can reach up to ∼123% for a fully transmissive ballistic junction and up to 84% in diffusive NS contacts. Both values exceed the rectification efficiency of a NIS tunnel junction (I stands for an insulator) by a factor close to ∼5 and ∼3, respectively. Furthermore, we show that for NS point-contacts with low transmissivity, inversion of the heat diode effect can take place. Our results could prove useful for tailoring heat management at the nanoscale, and for mastering thermal flux propagation in low-temperature caloritronic nanocircuitry.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Graphene spin diode: Strain-modulated spin rectification

Strain effects on spin transport in a ferromagnetic/strained/normal graphene junction are explored theoretically. It is shown that the spin-resolved Fermi energy range can be controlled by the armchair direction strain because the strain-induced pseudomagnetic field suppresses the current. The spin rectification effect for the bias reversal occurs because of a combination of ferromagnetic exchange splitting and the broken spatial symmetry of the junction. In addition, the spin rectification performance can be tuned remarkably by manipulation of the strains. In view of this strain-modulated spin rectification effect, we propose that the graphene-based ferromagnetic/strained/normal junction can be used as a tunable spin diode.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Rapid characterizing of ferromagnetic materials using spin rectification

Spin rectification is a powerful tool for dc electric detections of spin dynamics and electromagnetic waves. Technically, elaborately designed on-chip microwave devices are needed in order to realize that effect. In this letter, we propose a rapid characterizing approach based on spin rectification. By directly sending dynamic current into ferromagnetic films with stripe shape, resonant dc voltages can be detected along the longitudinal or transversal directions. As an example, Fe (010) films with precise crystalline structure and magnetic parameters were used to testify the reliability of such method. We investigated not only the dynamic parameters and the precise anisotropy constants of the Fe crystals but also the principle of spin rectification in this method.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Reduction in RF sheath rectification with insulating antenna enclosure walls

Abstract Radiofrequency (RF) sheath rectification is one of the most prominent deleterious effects associated with ion cyclotron range of frequencies (ICRF) heating in fusion plasmas. RF sheaths and associated effects, such as impurity generation and convective cell generation, need to be mitigated to ensure that ICRF is a viable option for heating in future fusion devices. Experiments were performed on the Large Plasma Device (LAPD) at UCLA to explore the effects of using electrically-insulating antenna enclosures on RF rectified sheaths. Three different enclosure side-wall materials were used, including copper, MACOR (electrically insulating), and MACOR over copper. In the case of the MACOR–copper side walls, the non-conductive MACOR material was exposed to the bulk plasma but a layer of copper was added below to allow for image currents to flow. All three of the experiments had similar plasma density, temperature, and background magnetic field. In the case of the copper enclosure, RF rectified potentials, many times the local electron temperature, and associated formation of convective cells were observed and reported Martin M. et al (2017 Phys. Rev. Lett. 119 205002). In the experiments with MACOR and MACOR–copper enclosures, RF rectification was significantly reduced. Additionally, these latter two experiments showed no evidence of convective cell formation. Although the results from the MACOR experiment are reminiscent of the results obtained in ASDEX-U with a three-strap antenna optimized to reduce image currents on the antenna limiters Bobkov V. et al (2016 Nucl. Fusion 56 084001), the MACOR–copper experiment seems to suggest that insulating plasma facing materials have at least an equally strong impact on reducing potential rectification.

Physics↗
DOE OSTI2020

Spin Rectification and Electrically Controlled Spin Transport in Molecular-Ferroelectrics-Based Spin Valves

We report a spin-rectification effect in a spin-valve structure consisting of ferroelectric croconic acid (C 5 H 2 O 5 ) sandwiched between ferromagnetic electrodes La 0.7 Sr 0.3 MnO 3 and Co, which can be switched between a high-resistance (off ) and a low-resistance (on) state by a poling voltage. In the off state, the magnetoresistance (MR) sign reverses with the measurement voltage with a 0.1-V offset, suggesting a spin-rectification behavior, while in the on state the MR remains negative. These observations can be understood in terms of electrically controlled interfacial energy-band alignment either from the electrostatic effect or from the interfacial redox process. In conclusion, the observed spin-rectification effect suggests thepossibility of diodelike devices for spin-polarized current.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Giant effect of terahertz-radiation rectification in periodic graphene plasmonic structures

The rectification of terahertz radiation due to plasmonic nonlinearities in a periodic graphene structure with a dual-grating gate and an asymmetric unit cell is considered. The influence of unit-cell asymmetry on the plasmonic rectification of the terahertz radiation near higher plasmonic resonances is considered for the cases of electron and hole conduction in parts of the graphene unit cell. The current responsivity of the rectification of terahertz radiation due to the plasmonic effects of differential charge-carrier drag and electron–hole ratchet is calculated.

36 MATERIALS SCIENCE↗