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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene

This letter performed polarized microscopic laser Raman scattering spectroscopy on the curved edges of transferred epitaxial graphene on SiO{sub 2}/Si. The intensity ratio between the parallel and perpendicular polarized D band is evolved, providing a spectroscopy-based technique to probe the atomic-scale edge structures in graphene. A detailed analysis procedure for non-ideal disordered curved edges of graphene is developed combining the atomic-scale zigzag and armchair edge structures along with some point defects. These results could provide valuable information of the realistic edges of graphene at the atomic-scale that can strongly influence the performance of graphene-based nanodevices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Raman scattering investigation of large positive magnetoresistance material WTe{sub 2}

We have performed polarized Raman scattering measurements on WTe{sub 2}, for which an extremely large positive magnetoresistance has been reported recently. We observe 5 A{sub 1} phonon modes and 2 A{sub 2} phonon modes out of 33 Raman active modes, with frequencies in good accordance with first-principles calculations. The angular dependence of the intensity of the peaks observed is consistent with the Raman tensors of the C{sub 2v} point group symmetry attributed to WTe{sub 2}. Although the phonon spectra suggest neither strong electron-phonon nor spin-phonon coupling, the intensity of the A{sub 1} phonon mode at 160.6 cm{sup −1} shows an unconventional decrease with temperature decreasing, for which the origin remains unclear.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Global and local structural variations near the antiferroelectric regime in Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}

Rietveld refinement of neutron and x-ray diffraction data of Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} shows R3c phase stabilization at room temperature. The intermediate antiferroelectric region between 180°C to 280°C exhibits phase coexistence i.e R3c + Pnma, along with decrease in octahedral tilt angle and increase in unit cell volume. The local structural changes observed from Raman scattering in the A-O, Ti-O and TiO{sub 6} phonon modes favor the global structural variation. A possible antiparallel cation displacement due to Pnma phase formation leads to the origin of antiferroelectric ordering in Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Collision-induced Raman scattering by rare-gas atoms: The isotropic spectrum of Ne–Ne and its mean polarizability

We report the room-temperature isotropic collision-induced light scattering spectrum of Ne–Ne over a wide interval of Raman shifts, and we compare it with the only available experimental spectrum for that system as well as with spectra calculated quantum-mechanically with the employ of advanced ab initio-computed data for the incremental mean polarizability. The spectral range previously limited to 170 cm{sup −1} is now extended to 485 cm{sup −1} allowing us to successfully solve the inverse-scattering problem toward an analytic model for the mean polarizability that perfectly matches our measurements. We also report the depolarization ratio of the scattering process, lingering over the usefulness of this property for more stringent checks between the various polarizability models.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

The disorder-induced Raman scattering in Au/MoS{sub 2} heterostructures

The Raman scattering has been studied in heterostructures composed of a thin MoS{sub 2} flake and a 1-1.5 nm layer of thermally evaporated gold (Au). There have been Au nanoislands detected in the heterostructure. It has been found that their surface density and the average size depend on the MoS{sub 2} thickness. The Raman scattering spectrum in the heterostructure with a few monolayer MoS{sub 2} only weakly depends on the excitation (resonant vs. non-resonant) mode. The overall Raman spectrum corresponds to the total density of phonon states, which is characteristic for disordered systems. The disorder in the MoS{sub 2} layer is related to the mechanical strain induced in the MoS{sub 2} layer by the Au nanoislands. The strain results in the localization of phonon modes, which leads to the relaxation of the momentum conservation rule in the scattering process. The relaxation allows phonons from the whole MoS{sub 2} Brillouin zone to interact with electronic excitations. Our results show that the Au nanoislands resulted from thermal evaporation of a thin metal layer introduce substantial disorder into the crystalline structure of the thin MoS{sub 2} layers.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma

The selective deposition of Si films was demonstrated using a chemical sputtering process induced by a high pressure hydrogen plasma at 52.6 kPa (400 Torr). In this chemical sputtering process, the initial deposition rate (R{sub d}) is dependent upon the substrate type. At the initial stage of Si film formation, R{sub d} on glass substrates increased with elapsed time and reached to a constant value. In contrast, R{sub d} on Si substrates remained constant during the deposition. The selective deposition of Si films can be achieved by adjusting the substrate temperature (T{sub sub}) and hydrogen concentration (C{sub H2}) in the process atmosphere. For any given deposition time, it was found that an optimum C{sub H2} exists for a given T{sub sub} to realize the selective deposition of a Si film, and the optimum T{sub sub} value tends to increase with decreasing C{sub H2}. According to electron diffraction patterns obtained from the samples, the selectively prepared Si films showed epitaxial-like growth, although the Si films contained many defects. It was revealed by Raman scattering spectroscopy that some of the defects in the Si films were platelet defects induced by excess hydrogen incorporated during Si film formation. Raman spectrum also suggested that Si related radicals (SiH{sub 2}, SiH, Si) with high reactivity contribute to the Si film formation. Simple model was derived as the guideline for achieving the selective growth.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Influence of piezoelectric strain on the Raman spectra of BiFeO 3 films deposited on PMN-PT substrates

In this study, BiFeO 3 epitaxial thin films were deposited on piezoelectric 0.72Pb(Mg 1/3 Nb 2/3 )O 3 -0.28PbTiO 3 (PMN-PT) substrates with a conductive buffer layer (La 0.7 Sr 0.3 MnO 3 or SrRuO 3 ) using pulsed laser deposition. The calibration of the strain values induced by the electric field applied on the piezoelectric PMN-PT substrates was realised using X-Ray diffraction measurements. The method of piezoelectrically induced strain allows to obtain a quantitative correlation between strain and the shift of the Raman-active phonons, ruling out the influence of extrinsic factors, such as growth conditions, crystalline quality of substrates, or film thickness. Using the Poisson number for BiFeO 3 one can determine the volume change induced by strain, and therefore the Gr neisen parameters for specific phonon modes.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Enhancement of Raman scattering signal of a few molecules using photonic nanojet mediated SERS technique

Now a days, single molecule surface enhanced Raman spectroscopy (SMSERS) has become a fascinating tool for studying the structural properties, static and dynamic events of single molecules (instead of ensemble average), with the help of efficient plasmonic nanostructures. This is extremely useful in the field of proteomics because the structural properties of protein molecules are heterogeneous. Even though, SMSERS provides wealthy information about single molecules, it demands high quality surface enhanced Raman scattering (SERS) substrates. So far, a very few researchers succeeded in demonstrating the single molecule Raman scattering using conventional SERS technique. However, the experimental S/N of the Raman signal has been found to be very poor. Recently, with the help of photonic nanojet of an optical microsphere, we were able to enhance the SERS signal of a few molecules adsorbed on the SERS substrates (gold symmetric and asymmetric nanodimers and trimers dispersed on a glass slide). Herein, we report a few details about photonic nanojet mediated SERS technique, a few experimental results and a detailed theoretical study on symmetric and asymmetric nanosphere dimers to understand the dependence of localised surface plasmon resonance (LSPR) wavelength of a nanodimer on the nanogap size and polarization of the excitation light.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Surface enhanced Raman spectroscopic studies on aspirin : An experimental and theoretical approach

Surface enhanced Raman scattering (SERS) studies on aspirin molecule adsorbed on silver nanoparticles (AgNPs) were investigated by experimental and density functional theory approach. The AgNPs were synthesized by the solution-combustion method and characterized by the X-ray diffraction and high resolution-transmission electron microscopy techniques. The averaged particle size of synthesized AgNPs was calculated as ∼55 nm. The normal Raman spectrum (nRs) and SERS spectrum of the aspirin were recorded. The molecular structure of the aspirin and aspirin adsorbed on silver cluster were optimized by the DFT/ B3PW91 method with LanL2DZ basis set. The vibrational frequencies were calculated and assigned on the basis of potential energy distribution calculation. The calculated nRs and SERS frequencies were correlated well with the observed frequencies. The flat-on orientation was predicted from the nRs and SERS spectra, when the aspirin adsorbed on the AgNPs. Hence, the present studies lead to the understanding of adsorption process of aspirin on the AgNPs, which paves the way for biomedical applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Enhanced luminescence in Mg{sup 2+} codoped CaTiO{sub 3}:Eu{sup 3+} phosphor prepared by solid state reaction

CaTiO{sub 3} phosphors doped with Eu{sup 3+} and codoped with Mg{sup 2+} were prepared by Solid State Reaction method. The powders were characterized by X-ray diffraction, SEM with EDS, Raman scattering, and photoluminescence spectroscopy. The Crystalline phase and vibrational modes of the phosphors were studied using XRD pattern and Raman Spectrum respectively. The morphological studies of the phosphor samples were carried out using SEM analysis. From PL spectra we have observed two prominent red emission peaks around at 595 nm ({sup 5}D{sub 0}→{sup 7}F{sub 1}), 619 nm ({sup 5}D{sub 0}→{sup 7}F{sub 2}) with the excitation of 399 nm for Eu{sup 3+} doped CaTiO{sub 3} powders. The PL intensity of CaTiO{sub 3}:Eu{sup 3+} phosphor is enhanced significantly on codoping with Mg{sup 2+}. The observed enhanced emissions are due to energy transfer from Mg{sup 2+} to Eu{sup 3+}, which is due to radiative recombination. Eu{sup 3+} doped phosphors are well known to be promising materials for electroluminescent devices, optical amplifiers, and lasers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Stimulated Raman scattering of laser dye mixtures dissolved in multiple scattering media

Stimulated Raman scattering (SRS) of a mixture of rhodamine 6G and pyrromethene 605 laser dyes in vesicular films is studied. It is shown that a peculiar interaction of dyes occurs under conditions of multiple scattering of light from vesicles. This interaction manifests itself as SRS excitation of one of the dyes by random lasing of the other dye, provided that the random lasing spectrum overlaps the Stokes lines of the first dye. In addition, there is energy transfer between molecules of these dyes if their luminescence and absorption spectra overlap. The results obtained confirm that the mechanism of SRS from laser dyes in multiple scattering media is similar to that in coherent-active Raman spectroscopy. These results extend the possibility of determining the vibrational spectrum of dye molecules from their secondary radiation in these media. (nonlinear optical phenomena)

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

High-Temperature Raman Scattering Study of the Li{sub 2}O–B{sub 2}O{sub 3}–MoO{sub 3} System: I. Detailed Comparison of the Structures of Molten Lithium and Potassium Molybdates

The structure and polymerization behavior of molybdenum–oxygen groups in molten lithium and potassium molybdates with different alkali-metal oxide to molybdenum oxide ratios have been studied by high-temperature Raman spectroscopy. The results are analyzed in comparison with the structural units of pure molybdenum oxide.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Interaction of optical and interface phonons and their anisotropy in GaAs/AlAs superlattices: Experiment and calculations

The angular anisotropy of interface phonons and their interaction with optical phonons in (001) GaAs/AlAs superlattices are calculated and experimentally studied. Experiments were performed by Raman light scattering in different scattering geometries for phonons with the wave vector directed normally to the superlattice and along its layers. Phonon frequencies were calculated by the extended Born method taking the Coulomb interaction into account in the rigid-ion approximation. Raman scattering spectra were calculated in the Volkenshtein bond-polarizability approximation. Calculations confirmed that the angular anisotropy of phonons observed in experiments appears due to interaction (mixing) of optical phonons, in which atoms are mainly displaced normally to superlattices, with interface phonons (TO-IF modes). In the scattering geometry, when the wave vector lies in the plane of superlattice layers, the mixed TO-IF modes are observed under nonresonance conditions. The Raman spectra for TO-IF modes depend on the mixing of atoms at heteroboundaries.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

High-frequency solitons in media with induced scattering from damped low-frequency waves with nonuniform dispersion and nonlinearity

The dynamics of high-frequency field solitons is considered using the extended nonhomogeneous nonlinear Schrödinger equation with induced scattering from damped low-frequency waves (pseudoinduced scattering). This scattering is a 3D analog of the stimulated Raman scattering from temporal spatially homogeneous damped low-frequency modes, which is well known in optics. Spatial inhomogeneities of secondorder linear dispersion and cubic nonlinearity are also taken into account. It is shown that the shift in the 3D spectrum of soliton wavenumbers toward the short-wavelength region is due to nonlinearity increasing in coordinate and to decreasing dispersion. Analytic results are confirmed by numerical calculations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Raman Scattering in Lonsdaleite

We present the results of our study of a polycrystalline diamond–lonsdaleite powder from the Popigai crater (Siberia) using UV micro-Raman scattering and synchrotron X-ray diffraction. By subtracting two experimental Raman spectra of diamond–lonsdaleite samples with a close ratio of the diamond and lonsdaleite fractions, when the maximum contribution to the difference spectrum is related to the difference of the lonsdaleite contributions and not to the change in the diamond band width, we have managed to obtain the spectrum of “pure” lonsdaleite. Its deconvolution has allowed us to identify all three Raman-active vibrational modes E{sub 2g}, A{sub 1g}, and E{sub 1g} whose positions agree well with the results of ab initio calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Optical phonons in PbTe/CdTe multilayer heterostructures

The infrared reflection spectra of PbTe/CdTe multilayer nanostructures grown by molecular-beam epitaxy are measured in the frequency range of 20–5000 cm{sup −1} at room temperature. The thicknesses and high-frequency dielectric constants of the PbTe and CdTe layers and the frequencies of the transverse optical (TO) phonons in these structures are determined from dispersion analysis of the spectra. It is found that the samples under study are characterized by two TO phonon frequencies, equal to 28 and 47 cm{sup −1}. The first frequency is close to that of TO phonons in bulk PbTe, and the second is assigned to the optical mode in structurally distorted interface layers. The Raman-scattering spectra upon excitation with the radiation of an Ar{sup +} laser at 514.5 nm are measured at room and liquid-nitrogen temperatures. The weak line at 106 cm{sup −1} observed in these spectra is attributed to longitudinal optical phonons in the interface layers.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Ab initio calculations of phonon dispersion in CdGa{sub 2}Se{sub 4}

The density of phonon states and the phonon dispersion in the Brillouin zone are calculated by the density functional method of. The displacements of atoms in the elementary cell are constructed for vibrations of the A, B, and E symmetries. The calculated frequencies of optical phonons are consistent with the experimentally determined frequencies from the IR-absorption (infrared) and Raman-scattering spectra. In the xy plane, the intersection of low-frequency optical phonons with acoustic phonons is observed.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium

The results of studies of the surface of GaAs in the presence of indium and phosphorus surfactants are reported. It is shown that, as a result of their diffusion (annealing) at a temperature of 650–670°C, clusters enriched with indium are formed in the GaAs surface region. The clusters can be seen as bright spots in an image obtained by a scanning electron microscope with the use of an in-lens detector. At the same time, studies of the morphology of this surface with an atomic-force microscope show a decrease in the root-meansquare roughness of the surface after annealing (diffusion), which is indicative of the incorporation of In atoms into the GaAs crystal lattice. The clusters are responsible for changes in the Raman spectra. Specifically, an increase in the signal intensity due to surface-enhanced Raman scattering and a shift of the vibration frequency in the surface region are observed. It is found that cluster formation is defined by the crystallographic orientation of the surface and by the technological conditions of surface preparation.

36 MATERIALS SCIENCE↗