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NASA NTRS2006

Using Quasiparticle Poisoning To Detect Photons

According to a proposal, a phenomenon associated with excitation of quasiparticles in certain superconducting quantum devices would be exploited as a means of detecting photons with exquisite sensitivity. The phenomenon could also be exploited to perform medium-resolution spectroscopy. The proposal was inspired by the observation that Coulomb blockade devices upon which some quantum logic gates are based are extremely sensitive to quasiparticles excited above the superconducting gaps in their leads. The presence of quasiparticles in the leads can be easily detected via the charge states. If quasiparticles could be generated in the leads by absorption of photons, then the devices could be used as very sensitive detectors of electromagnetic radiation over the spectral range from x-rays to submillimeter waves. The devices in question are single-Cooper-pair boxes (SCBs), which are mesoscopic superconducting devices developed for quantum computing. An SCB consists of a small superconducting island connected to a reservoir via a small tunnel junction and connected to a voltage source through a gate capacitor. An SCB is an artificial two-level quantum system, the Hamiltonian of which can be controlled by the gate voltage. One measures the expected value of the charge of the eigenvectors of this quantum system by use of a radio-frequency single-electron transistor. A plot of this expected value of charge as a function of gate voltage resembles a staircase that, in the ideal case, consists of steps of height 2 e (where e is the charge of one electron). Experiments have shown that depending on the parameters of the device, quasiparticles in the form of "broken" Cooper pairs present in the reservoir can tunnel to the island, giving rise to steps of 1 e. This effect is sometimes called "poisoning." Simulations have shown that an extremely small average number of quasiparticles can generate a 1-e periodic signal. In a device according to the proposal, this poisoning would be turned to advantage. Depending on the wavelength, an antenna or other component would be used to couple radiation into the reservoir, wherein the absorption of photons would break Cooper pairs, thereby creating quasiparticles that, in turn, would tunnel to the island, creating a 1-e signal. On the basis of conservative estimates of device parameters derived from experimental data and computational simulations that fit the data, it has been estimated that the noise equivalent power of a device according to the proposal could be as low as 6 10(exp -22) W/Hz(exp 1/2). It has also been estimated that the spectroscopic resolution (photon energy divided by increment of photon energy) of such a device in visible light would exceed 100.

Echternach, Pierre↗

NASA NTRS1998

Characterization of an Ozone DIAL Receiver for Operation on an Unpiloted Atmospheric Vehicle

Laser remote sensing from aircraft has become a very important technique for observing ozone in the environment. NASA Langley has an active aircraft based research program which presently uses Nd:YAG-pumped dye lasers that are then doubled into the UV to probe both the stratosphere and troposphere for ozone using the differential absorption lidar (DIAL) technique. This large system can only fly on large (NASA DC-8, Electra) aircraft and has been deployed on many missions throughout the world. In the future it will be desirable to fly autonomous, lightweight, compact ozone DIAL instruments on unpiloted atmospheric vehicles (UAV) aircraft. Such aircraft could fly at high altitudes for extended times collecting science data without risk to the operator. Cost for such missions may be substantially reduced over present large aircraft based missions. Presently there are no ozone DIAL systems capable of flying on an UAV aircraft. In order to facilitate UAV missions, small more efficient laser transmitters need to be developed that emit approximately 25mJ near 300nm for each of the DIAL 'on' and 'off' line pulses. Also lightweight, compact DIAL receiver systems need to be built and demonstrated. Such receiver systems may incorporate fiber optic coupled telescopes for maximum light gathering capability per unit area, high quantum efficiency gated photomultiplier tubes with reasonable gain and very narrow-band filters for background light rejection with high light throughput. A compact high-performance 16-bit digitizer and a data storage system are also required. A conceptional design of such a UAV DIAL instrument is presented. Here a pulsed UV laser emits pulses into the atmosphere where elastic scattering occurs which results in light being scattered into the receiver telescope. The subject of this paper is the design, construction and testing of a robust, compact ozone DIAL receiver system that would be a prototype for eventual use in a UAV aircraft.

Goldschmidt, Soenke↗

NASA NTRS2003

Quantum dots cellular automata: fault tolerant logic gates and wires

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fault tolerance↗

NASA NTRS2000

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction ot the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Biegel, Bryan A.↗

NASA NTRS2005

SCB Quantum Computers Using iSWAP and 1-Qubit Rotations

Units of superconducting circuitry that exploit the concept of the single- Cooper-pair box (SCB) have been built and are undergoing testing as prototypes of logic gates that could, in principle, constitute building blocks of clocked quantum computers. These units utilize quantized charge states as the quantum information-bearing degrees of freedom. An SCB is an artificial two-level quantum system that comprises a nanoscale superconducting electrode connected to a reservoir of Cooper-pair charges via a Josephson junction. The logical quantum states of the device, .0. and .1., are implemented physically as a pair of charge-number states that differ by 2e (where e is the charge of an electron). Typically, some 109 Cooper pairs are involved. Transitions between the logical states are accomplished by tunneling of Cooper pairs through the Josephson junction. Although the two-level system contains a macroscopic number of charges, in the superconducting regime, they behave collectively, as a Bose-Einstein condensate, making possible a coherent superposition of the two logical states. This possibility makes the SCB a candidate for the physical implementation of a qubit. A set of quantum logic operations and the gates that implement them is characterized as universal if, in principle, one can form combinations of the operations in the set to implement any desired quantum computation. To be able to design a practical quantum computer, one must first specify how to decompose any valid quantum computation into a sequence of elementary 1- and 2-qubit quantum gates that are universal and that can be realized in hardware that is feasible to fabricate. Traditionally, the set of universal gates has been taken to be the set of all 1-qubit quantum gates in conjunction with the controlled-NOT (CNOT) gate, which is a 2-qubit gate. Also, it has been known for some time that the SWAP gate, which implements square root of the simple 2-qubit exchange interaction, is as computationally universal as is the CNOT operation.

Williams, Colin↗

NASA NTRS1998

Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model

We describe an electronic transport model and an implementation approach that respond to the challenges of device modeling for gigascale integration. We use the density-gradient (DG) transport model, which adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We present the current implementation of the DG model in PROPHET, a partial differential equation solver developed by Lucent Technologies. This implementation approach permits rapid development and enhancement of models, as well as run-time modifications and model switching. We show that even in typical bulk transport devices such as P-N diodes and BJTs, DG quantum effects can significantly modify the I-V characteristics. Quantum effects are shown to be even more significant in small, surface transport devices, such as sub-0.1 micron MOSFETs. In thin-oxide MOS capacitors, we find that quantum effects may reduce gate capacitance by 25% or more. The inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements. Significant quantum corrections also occur in the I-V characteristics of short-channel MOSFETs due to the gate capacitance correction.

Biegel, Bryan A.↗

NASA NTRS1998

Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model

The continued down-scaling of electronic devices, in particular the commercially dominant MOSFET, will force a fundamental change in the process of new electronics technology development in the next five to ten years. The cost of developing new technology generations is soaring along with the price of new fabrication facilities, even as competitive pressure intensifies to bring this new technology to market faster than ever before. To reduce cost and time to market, device simulation must become a more fundamental, indeed dominant, part of the technology development cycle. In order to produce these benefits, simulation accuracy must improve markedly. At the same time, device physics will become more complex, with the rapid increase in various small-geometry and quantum effects. This work describes both an approach to device simulator development and a physical model which advance the effort to meet the tremendous electronic device simulation challenge described above. The device simulation approach is to specify the physical model at a high level to a general-purpose (but highly efficient) partial differential equation solver (in this case PROPHET, developed by Lucent Technologies), which then simulates the model in 1-D, 2-D, or 3-D for a specified device and test regime. This approach allows for the rapid investigation of a wide range of device models and effects, which is certainly essential for device simulation to catch up with, and then stay ahead of, electronic device technology of the present and future. The physical device model used in this work is the density-gradient (DG) quantum correction to the drift-diffusion model [Ancona, Phys. Rev. B 35(5), 7959 (1987)]. This model adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We used the DG model in 1-D and 2-D (for the first time) to simulate both bipolar and unipolar devices. Simulations of heavily-doped, short-base diodes indicated that the DG quantum corrections do not have a large effect on the IN characteristics of electronic devices without heteroj unction s. On the other hand, ultra-small MOSFETs certainly exhibit important quantum effects that the DG model will include: quantum repulsion of the inversion and gate charges from the oxide interfaces, and quantum tunneling through thin gate oxides. We present initial results of 2-D DG simulations of ultra-small MOSFETs. Subtle but important issues involving the specification of the model, boundary conditions, and interface constraints for DG simulation of MOSFETs will also be illuminated.

Biegal, Bryan A.↗

NASA NTRS2000

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Biegel, Bryan A.↗

NASA NTRS2003

The Development of Design Tools for Fault Tolerant Quantum Dot Cellular Automata Based Logic

We are developing software to explore the fault tolerance of quantum dot cellular automata gate architectures in the presence of manufacturing variations and device defects. The Topology Optimization Methodology using Applied Statistics (TOMAS) framework extends the capabilities of the A Quantum Interconnected Network Array Simulator (AQUINAS) by adding front-end and back-end software and creating an environment that integrates all of these components. The front-end tools establish all simulation parameters, configure the simulation system, automate the Monte Carlo generation of simulation files, and execute the simulation of these files. The back-end tools perform automated data parsing, statistical analysis and report generation.

Armstrong, Curtis D.↗

NASA NTRS2003

Block QCA Fault-Tolerant Logic Gates

Suitably patterned arrays (blocks) of quantum-dot cellular automata (QCA) have been proposed as fault-tolerant universal logic gates. These block QCA gates could be used to realize the potential of QCA for further miniaturization, reduction of power consumption, increase in switching speed, and increased degree of integration of very-large-scale integrated (VLSI) electronic circuits. The limitations of conventional VLSI circuitry, the basic principle of operation of QCA, and the potential advantages of QCA-based VLSI circuitry were described in several NASA Tech Briefs articles, namely Implementing Permutation Matrices by Use of Quantum Dots (NPO-20801), Vol. 25, No. 10 (October 2001), page 42; Compact Interconnection Networks Based on Quantum Dots (NPO-20855) Vol. 27, No. 1 (January 2003), page 32; Bit-Serial Adder Based on Quantum Dots (NPO-20869), Vol. 27, No. 1 (January 2003), page 35; and Hybrid VLSI/QCA Architecture for Computing FFTs (NPO-20923), which follows this article. To recapitulate the principle of operation (greatly oversimplified because of the limitation on space available for this article): A quantum-dot cellular automata contains four quantum dots positioned at or between the corners of a square cell. The cell contains two extra mobile electrons that can tunnel (in the quantummechanical sense) between neighboring dots within the cell. The Coulomb repulsion between the two electrons tends to make them occupy antipodal dots in the cell. For an isolated cell, there are two energetically equivalent arrangements (denoted polarization states) of the extra electrons. The cell polarization is used to encode binary information. Because the polarization of a nonisolated cell depends on Coulomb-repulsion interactions with neighboring cells, universal logic gates and binary wires could be constructed, in principle, by arraying QCA of suitable design in suitable patterns. Heretofore, researchers have recognized two major obstacles to realization of QCA-based logic gates: One is the need for (and the difficulty of attaining) operation of QCA circuitry at room temperature or, for that matter, at any temperature above a few Kelvins. It has been theorized that room-temperature operation could be made possible by constructing QCA as molecular-scale devices. However, in approaching the lower limit of miniaturization at the molecular level, it becomes increasingly imperative to overcome the second major obstacle, which is the need for (and the difficulty of attaining) high precision in the alignments of adjacent QCA in order to ensure the correct interactions among the quantum dots.

Firjany, Amir↗

NASA NTRS2001

A Radiation-Tolerant, Low-Power Non-Volatile Memory Based on Silicon Nanocrystal Quantum Dots

Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled in program/erase threshold voltage swing was seen during 100,000 program and erase cycles. Additional near-term goals for this project include extensive testing for radiation hardness and the development of artificial layered tunnel barrier heterostructures which have the potential for large speed enhancements for read/write of nanocrystal memory elements, compared with conventional flash devices. Additional information is contained in the original extended abstract.

Bell, L. D.↗

NASA NTRSDate not supplied

High dimensional similarity search with quantum assisted variational autoencoder

Recent progress in quantum algorithms and hardware is indicator of the potential importance of quantum computing in the next future. However, finding suitable application areas remains an active area of research. Quantum machine learning [1] is touted as a potential approach to demonstrate quantum advantage within both the gate-model [2,3] and the adiabatic [4,5] schemes. For instance, the Quantum-assisted Variational Autoencoder (QVAE) [6] has been proposed as a quantum enhancement to the discrete VAE [7]. We extend on previous work and study the real-world applicability of a QVAE, specifically, for similarity search in large-scale high dimensional datasets. While similarity search algorithms are available for low dimensional datasets, scaling to billion-scale datasets with thousands of dimensions is non-trivial. We show how the latent-space representation of a QVAE can be used to construct a space-efficient search index. We back up our claims by experimental results which show a correlation between the Hamming distance in the embedded space and the Euclidean distance in the original space on the Moderate Resolution Imaging Spectroradiometer (MODIS) dataset. Further, we show real-world speedups compared to linear search and demonstrate memory efficient scaling to large-scale datasets.

Nicholas D Gao↗

NASA NTRS2001

A radiation - tolerant, low - power non - volatile memory based on silicon nanocrystal quantum dots.

Green, M. L.↗

NASA NTRSDate not supplied

High-Dimensional Similarity Search with Quantum-Assisted Variational Autoencoder

Recent progress in quantum algorithms and hardware indicates the potential importance of quantum computing in the near future. However, finding suitable application areas remains an active area of research. Quantum machine learning is touted as a potential approach to demonstrate quantum advantage within both the gate-model and the adiabatic schemes. For instance, the QVAE has been proposed as a quantum enhancement to the discrete VAE. We extend on previous work and study the real-world applicability of a QVAE by presenting a proof-of-concept for similarity search in large-scale high-dimensional datasets. While exact and fast similarity search algorithms are available for low dimensional datasets, scaling to high-dimensional data is non-trivial. We show how to construct a space-efficient search index based on the latent space representation of a QVAE. Our experiments show a correlation between the Hamming distance in the embedded space and the Euclidean distance in the original space on the MODIS dataset. Further, we find real-world speedups compared to linear search and demonstrate memory-efficient scaling to half a billion data points.

Data mining, similarity search, quantum machine le↗

NASA NTRS2000

Quantum Corrections to the 'Atomistic' MOSFET Simulations

We have introduced in a simple and efficient manner quantum mechanical corrections in our 3D 'atomistic' MOSFET simulator using the density gradient formalism. We have studied in comparison with classical simulations the effect of the quantum mechanical corrections on the simulation of random dopant induced threshold voltage fluctuations, the effect of the single charge trapping on interface states and the effect of the oxide thickness fluctuations in decanano MOSFETs with ultrathin gate oxides. The introduction of quantum corrections enhances the threshold voltage fluctuations but does not affect significantly the amplitude of the random telegraph noise associated with single carrier trapping. The importance of the quantum corrections for proper simulation of oxide thickness fluctuation effects has also been demonstrated.

Asenov, Asen↗

NASA NTRS2004

Optimal design of two-qubit quantum circuits

In order to demonstrate non-trivial quantum computations experimentally, such as the synthesis of arbitrary entangled states, it will be useful to nderstand how to decompose a desired quantum computation into the shortest possible sequence of one-qubit and two-qubit gates. We contribute to this effort by providing a method to construct an optimal quantum circuit for a general two-qubit gate that requires at most 3 CNOT gates and 15 elementary one qubit gates. We then prove that these constructions are optimal with respect to the family of CNOT, y-rotation, z-rotation, and phase gates.

quantum circuit unitary operation↗

NASA NTRS2001

Quantum Mechanical Study of Nanoscale MOSFET

The steady state characteristics of MOSFETS that are of practical Interest are the drive current, off-current, dope of drain current versus drain voltage, and threshold voltage. In this section, we show that quantum mechanical simulations yield significantly different results from drift-diffusion based methods. These differences arise because of the following quantum mechanical features: (I) polysilicon gate depletion in a manner opposite to the classical case (II) dependence of the resonant levels in the channel on the gate voltage, (III) tunneling of charge across the gate oxide and from source to drain, (IV) quasi-ballistic flow of electrons. Conclusions dI/dV versus V does not increase in a manner commensurate with the increase in number of subbands. - The increase in dI/dV with bias is much smaller then the increase in the number of subbands - a consequence of bragg reflection. Our calculations show an increase in transmission with length of contact, as seen in experiments. It is desirable for molecular electronics applications to have a small contact area, yet large coupling. In this case, the circumferential dependence of the nanotube wave function dictates: - Transmission in armchair tubes saturates around unity - Transmission in zigzag tubes saturates at two.

Svizhenko, Alexei↗

NASA NTRSDate not supplied

Introduction to Quantum Computing

Quantum computing offers the potential to revolutionize high-performance computing by providing a means to solve certain computational problems asymptotically faster than any classical computer. Quantum computing has advanced recently from merely a theoretical possibility to engineered reality, including commercial entities offering early prototype quantum processors, both special-purpose quantum annealers and general-purpose gate-model processors. The media have been showcasing each new development and implicitly conveying the message that quantum-computing ubiquity is nigh. Here, we will respond to this hype and provide an overview of the exciting but still early state of the field. In this tutorial, we introduce participants to the computational models that give quantum computing its immense computational power. We examine the thought processes that programmers need to map problems to quantum computers. And we discuss hardware and algorithmic challenges that must be overcome before quantum computing becomes a component of every software developer's repertoire.

Quantum computing↗