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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Quantum efficiency measurements for several waveshifter coatings in the extreme vacuum ultraviolet

Quantum efficiency measurements are given for coronene and liumogen coatings designed to enhance UV sensitivity for silicon charge coupled device imaging detectors. Coatings on quartz and on UDT PIN 10DP photodiodes were tested. The wavelength range extended from 153.7 to 50.0 nm in the vacuum ultraviolet. Similar measurements were made for coronene, liumogen, and stilbene-3 laser dye films on quartz disks relative to sodium salicylate. Sodium salicylate and coronene are the most efficient waveshifters down to 50 nm so far observed. Coronene's fairly constant quantum efficiency over such a wide wavelength range into the far VUV makes it a useful waveshifter for UV and VUV applications.

Butner, C. L.↗
NASA NTRS1989

Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency

Low threshold current density strained-layer In(0.2)Ga(0.8)As/GaAs/AlGaAs single quantum well lasers, emitting at 980 nm, have been grown by molecular beam epitaxy. Contrary to what has been reported for broad-area lasers with pseudomorphic InGaAs active layers grown by metalorganic chemical vapor deposition, these layers exhibit a high internal quantum efficiency (about 90 percent). The maximum external differential quantum efficiency is 70 percent, limited by an anomalously high internal loss possibly caused by a large lateral spreading of the optical mode. In addition, experimental results supporting the theoretically predicted strain-induced reduction of the valence-band nonparabolicity and density of states are presented.

Larsson, Anders↗
NASA NTRS1975

Quantum efficiency of a channel electron multiplier in the far ultraviolet

Variation of the quantum efficiency of a channel electron multiplier (CEM) in the wavelength range from 1200 to 2536 A is studied. Emphasis is on measurement of CEM sensitivity longward of 1500 A. Results indicate an overall rapid decrease in quantum efficiency with increasing wavelength, with little evidence for a possible change in slope in the range from 2000 to 2500 A. The lowest efficiency measured is 4.5 + or -2.5 times 10 to the minus ninth count/photon at 2536 A. These efficiencies should ensure that unwanted radiation longward of 1500 A can be effectively removed from the bandpass of the instrument.

Paresce, F.↗
DOE OSTI2023

Record quantum efficiency from strain compensated superlattice GaAs/GaAsP photocathode for spin polarized electron source

Photocathodes based on GaAs and other III–V semiconductors are capable of producing highly spin-polarized electron beams. GaAs/GaAsP superlattice photocathodes exhibit high spin polarization; however, the quantum efficiency (QE) is limited to 1% or less. To increase the QE, we fabricated a GaAs/GaAsP superlattice photocathode with a Distributed Bragg Reflector (DBR) underneath. This configuration creates a Fabry–Pérot cavity between the DBR and GaAs surface, which enhances the absorption of incident light and, consequently, the QE. These photocathode structures were grown using molecular beam epitaxy and achieved record quantum efficiencies exceeding 15% and electron spin polarization of about 75% when illuminated with near-bandgap photon energies.

47 OTHER INSTRUMENTATION↗
NASA NTRS1989

Photosensor with enhanced quantum efficiency

A method to significantly increase the quantum efficiency (QE) of a CCD (or similar photosensor) applied in the UV, far UV and low energy x-ray regions of the spectrum. The increase in QE is accomplished by overthinning the backside of a CCD substrate beyond the epitaxial interface and UV flooding the sensor prior to use. The UV light photoemits electrons to the thinned surface and charges the backside negatively. This in turn forms an accumulation layer of holes near the Si-SiO.sub.2 interface creating an electric field gradient in the silicon which directs the photogenerated signal to the frontside where they are collected in pixel locations and later transferred. An oxide film, in which the backside charge resides, must have quality equivalent to a well aged native oxide which typically takes several years to form under ambient conditions. To reduce the amount of time in growing an oxide of sufficient quality, a process has been developed to grow an oxide by using deionized steam at 95.degree. C. which takes less than one hour to grow.

Janesick, James R.↗
NASA NTRS2009

OP09O-OP404-9 Wide Field Camera 3 CCD Quantum Efficiency Hysteresis

The HST/Wide Field Camera (WFC) 3 UV/visible channel CCD detectors have exhibited an unanticipated quantum efficiency hysteresis (QEH) behavior. At the nominal operating temperature of -83C, the QEH feature contrast was typically 0.1-0.2% or less. The behavior was replicated using flight spare detectors. A visible light flat-field (540nm) with a several times full-well signal level can pin the detectors at both optical (600nm) and near-UV (230nm) wavelengths, suppressing the QEH behavior. We are characterizing the timescale for the detectors to become unpinned and developing a protocol for flashing the WFC3 CCDs with the instrument's internal calibration system in flight. The HST/Wide Field Camera 3 UV/visible channel CCD detectors have exhibited an unanticipated quantum efficiency hysteresis (QEH) behavior. The first observed manifestation of QEH was the presence in a small percentage of flat-field images of a bowtie-shaped contrast that spanned the width of each chip. At the nominal operating temperature of -83C, the contrast observed for this feature was typically 0.1-0.2% or less, though at warmer temperatures contrasts up to 5% (at -50C) have been observed. The bowtie morphology was replicated using flight spare detectors in tests at the GSFC Detector Characterization Laboratory by power cycling the detector while cold. Continued investigation revealed that a clearly-related global QE suppression at the approximately 5% level can be produced by cooling the detector in the dark; subsequent flat-field exposures at a constant illumination show asymptotically increasing response. This QE "pinning" can be achieved with a single high signal flat-field or a series of lower signal flats; a visible light (500-580nm) flat-field with a signal level of several hundred thousand electrons per pixel is sufficient for QE pinning at both optical (600nm) and near-UV (230nm) wavelengths. We are characterizing the timescale for the detectors to become unpinned and developing a protocol for flashing the WFC3 CCDs with the instrument's internal calibration system in flight. A preliminary estimate of the decay timescale for one detector is that a drop of 0.1-0.2% occurs over a ten day period, indicating that relatively infrequent cal lamp exposures can mitigate the behavior to extremely low levels.

Collins, Nick↗
DOE OSTI2026

Enhanced quantum efficiency from optical interference in alkali antimonide photocathodes: Modeling and experimental results

We present measurements of enhanced quantum efficiency (QE) in thin film alkali antimonide photocathodes from optical interference in the cathode-substrate multilayer. Modulations in the spectral response are observed over a range of visible wavelengths and are shown to increase the QE by more than a factor of two at specific wavelengths. We present a model describing the QE modulations based on the three step photoemission process incorporating cases of both constant density of states and density functional theory-derived density of states and show that the calculated results are in good agreement with the measurements. Model predictions demonstrate that QE can be enhanced by more than a factor of 5 by optimization of cathode and substrate layer thicknesses. Additionally, these calculations reveal that optical interference can yield higher quantum efficiencies in thin films compared to thick, optically dense films. We model the QE vs excitation wavelength of multiple alkali antimonide compounds at different thicknesses. We then discuss the advantages of this interference effect for electron accelerators.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

(U) Segmented Scintillator Pitch, Thickness, and Septa Material Effects on the Swank Factor, Quantum Efficiency, and DQE(0) for High-Energy X-Ray Radiography

Scintillator design is an important aspect in constructing a radiographic facility in order to collect the most robust data possible. For the proposed Enhanced Capabilities for Sub-critical Experiment (ECSE) facility in Nevada, we explored a permutation of 13 segmented scintillator designs in order to understand the best performance and trade offs for each design. We calculated the quantum efficiency, Swank factor, and detective quantum efficiency at zero-frequency (DQE(0)) for each scintillator design in order to compare performance.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Green-emitting cubic GaN/In 0.16 Ga 0.84 N/GaN quantum well with 32% internal quantum efficiency at room temperature

Structural and optical properties of a green-emitting cubic (i.e., zinc blende) GaN/In 0.16 Ga 0.84 N/GaN single quantum well structure are reported. The active layer is grown on a phase-pure (i.e., 100%) cubic GaN enabled on a 1 × 1 cm 2 U-grooved silicon (100) through aspect ratio phase trapping. Energy dispersive x-ray spectroscopy combined with room temperature cathodoluminescence reveals 522 nm green light emission at room temperature with only 16.0% ± 1.6% of indium content, which is ~30% less than the amount of indium needed in a traditional green-emitting hexagonal (i.e., wurtzite) well. Temperature-dependent behavior of the green emission, such as activation energy, s-shaped peak energy shift, and linewidth, is reported. Cathodoluminescence at 8 and 300 K reveals an internal quantum efficiency of 32.0% ± 0.6%, which is higher than any reported value for cubic wells. Altogether, phase-pure cubic active layers on phase transition cubic GaN are shown to be promising for green and longer wavelength emitters.

42 ENGINEERING↗
NASA NTRS1987

Quantum efficiencies of imaging detectors with alkali halide photocathodes. I - Microchannel plates with separate and integral CsI photocathodes

Measurements and comparisons have been made of the quantum efficiencies of microchannel plate (MCP) detectors in the far-UV (below 2000-A) wavelength range using CsI photocathodes (a) deposited on the front surfaces of microchannel plates and (b) deposited on solid substrates as opaque photocathodes with the resulting photoelectrons input to microchannel plates. The efficiences were measured in both pulse-counting and photodiode modes of operation. Typical efficiencies are about 15 percent at 1216 A for a CsI-coated MCP compared with 65 percent for an opaque CsI photocathode MCP detector. Special processing has yielded an efficiency as high as 20 percent for a CsI-coated MCP. This may possibly be further improved by optimization of the tilt angle of the MCP channels relative to the front face of the MCP and incident radiation. However, at present there still remains a factor of at least 3 quantum efficiency advantage in the separate opaque CsI photocathode configuration.

Carruthers, George R.↗
DOE OSTI2024

Towards provably efficient quantum algorithms for large-scale machine-learning models

Large machine learning models are revolutionary technologies of artificial intelligence whose bottlenecks include huge computational expenses, power, and time used both in the pre-training and fine-tuning process. In this work, we show that fault-tolerant quantum computing could possibly provide provably efficient resolutions for generic (stochastic) gradient descent algorithms, scaling as $\mathcal{O}$(T 2 x polylog($n$)), where n is the size of the models and T is the number of iterations in the training, as long as the models are both sufficiently dissipative and sparse, with small learning rates. Based on earlier efficient quantum algorithms for dissipative differential equations, we find and prove that similar algorithms work for (stochastic) gradient descent, the primary algorithm for machine learning. In practice, we benchmark instances of large machine learning models from 7 million to 103 million parameters. We find that, in the context of sparse training, a quantum enhancement is possible at the early stage of learning after model pruning, motivating a sparse parameter download and re-upload scheme. Our work shows solidly that fault-tolerant quantum algorithms could potentially contribute to most state-of-the-art, large-scale machine-learning problems.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1993

How to squeeze high quantum efficiency and high time resolution out of a SPAD

We address the issue whether Single-Photon Avalanche Diodes (SPADs) can be suitably designed to achieve a trade-off between quantum efficiency and time resolution performance. We briefly recall the physical mechanisms setting the time resolution of avalanche photodiodes operated in single-photon counting, and we give some criteria for the design of SPADs with a quantum efficiency better than l0 percent at 1064 nm together with a time resolution below 50 ps rms.

Lacaita, A.↗