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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

The quantum Hall effect in the absence of disorder

Abstract It is widely held that disorder is essential to the existence of a finite interval of magnetic field in which the Hall conductance is quantized, i.e., for the existence of “plateaus” in the quantum Hall effect. Here, we show that the existence of a quasi-particle Wigner crystal (QPWC) results in the persistence of plateaus of finite extent even in the limit of vanishing disorder. Several experimentally detectable features that characterize the behavior in the zero disorder limit are also explored.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Fractional Quantum Hall Effect in Weyl Semimetals

Weyl semimetal may be thought of as a gapless topological phase protected by the chiral anomaly, where the symmetries involved in the anomaly are the U(1) charge conservation and the crystal translational symmetry. The absence of a band gap in a weakly interacting Weyl semimetal is mandated by the electronic structure topology and is guaranteed as long as the symmetries and the anomaly are intact. The nontrivial topology also manifests in the Fermi arc surface states and topological response, in particular taking the form of an anomalous Hall effect in magnetic Weyl semimetals, whose magnitude is only determined by the location of the Weyl nodes in the Brillouin zone. In this work, we consider the situation when the interactions are not weak and ask whether it is possible to open a gap in a magnetic Weyl semimetal while preserving its nontrivial electronic structure topology along with the translational and the charge conservation symmetries. Surprisingly, the answer turns out to be yes. The resulting topologically ordered state provides a nontrivial realization of the fractional quantum Hall effect in three spatial dimensions in the absence of an external magnetic field, which cannot be viewed as a stack of two dimensional states. Our state contains loop excitations with nontrivial braiding statistics when linked with lattice dislocations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Noncommutative gauge symmetry in the fractional quantum Hall effect

Abstract We show that a system of particles on the lowest Landau level can be coupled to a probe U(1) gauge field$$ \mathcal{A} $$ A μ in such a way that the theory is invariant under a noncommutative U(1) gauge symmetry. While the temporal component$$ \mathcal{A} $$ A 0 of the probe field is coupled to the projected density operator, the spatial components$$ \mathcal{A} $$ A i are best interpreted as quantum displacements, which distort the interaction potential between the particles. We develop a Seiberg-Witten-type map from the noncommutative U(1) gauge symmetry to a simpler version, which we call “baby noncommutative” gauge symmetry, where the Moyal brackets are replaced by the Poisson brackets. The latter symmetry group is isomorphic to the group of volume preserving diffeomorphisms. By using this map, we resolve the apparent contradiction between the noncommutative gauge symmetry, on the one hand, and the particle-hole symmetry of the half-filled Landau level and the presence of the mixed Chern-Simons terms in the effective Lagrangian of the fractional quantum Hall states, on the other hand. We outline the general procedure which can be used to write down effective field theories which respect the noncommutative U(1) symmetry.

Physics↗
DOE OSTI2021

Stability of the particle-hole Pfaffian state and the 5 2 -fractional quantum Hall effect

Here we present a method for the exact construction of the fully particle-hole symmetric Pfaffian (PH-Pfaffian) ground state and its charged excitations on a sphere. We adopt the Moore-Read state, but with a nonholomorphic pairing component as in previous studies, and project it to the lowest Landau level. We study the energetics as well as other properties of these states and find that in a pure system interacting with the Coulomb forces the PH-Pfaffian cannot compete with either the Moore-Read state or its particle-hole conjugate, the anti-Pfaffian state, as an explanation for the 5/2 effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Exchange-Biased Quantum Anomalous Hall Effect

The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, the QAH effect is realized in the magnetic topological insulator Cr-doped (Bi,Sb) 2 Te 3 (CBST) grown on an uncompensated antiferromagnetic insulator Al-doped Cr 2 O 3 . Through polarized neutron reflectometry (PNR), a strong exchange coupling is found between CBST and Al-Cr 2 O 3 surface spins fixing interfacial magnetic moments perpendicular to the film plane. Further, the interfacial coupling results in an exchange-biased QAH effect. This study further demonstrates that the magnitude and sign of the exchange bias can be effectively controlled using a field training process to set the magnetization of the Al-Cr 2 O 3 layer. It demonstrates the use of the exchange bias effect to effectively manipulate the QAH state, opening new possibilities in QAH-based spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Breakdown of the $v=1$ integer quantum Hall effect in the single particle and collective localization regimes

We report large signal current–voltage characteristics measurements near the $v=1$ integer quantum Hall plateau in a high mobility GaAs/AlGaAs sample that exhibits both single particle and collective localization. According to prior results, the central part of the $v=1$ plateau corresponds to single particle localization and hence an Anderson insulator. In contrast, the two regions in the flanks of this Anderson insulator were associated with collective localization and were identified with the integer quantum Hall Wigner solid. We find that, at low temperatures and under large bias currents, both the Anderson insulator and integer quantum Hall Wigner solid have a sharp onset of conduction above a threshold. Furthermore, this threshold shows an approximately monotonic dependence on the filling factor across the boundary between the two localized phases. Finally, to our surprise, we find that these large signal characteristics do not clearly distinguish between the Anderson insulator and the integer quantum Hall Wigner solid.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Recent progress in MnBi2 n Te3 n +1 intrinsic magnetic topological insulators: crystal growth, magnetism and chemical disorder

ABSTRACT The search for magnetic topological materials has been at the forefront of condensed matter research for their potential to host exotic states such as axion insulators, magnetic Weyl semimetals, Chern insulators, etc. To date, the MnBi2nTe3n+1 family is the only group of materials showcasing van der Waals-layered structures, intrinsic magnetism and non-trivial band topology without trivial bands at the Fermi level. The interplay between magnetism and band topology in this family has led to the proposal of various topological phenomena, including the quantum anomalous Hall effect, quantum spin Hall effect and quantum magnetoelectric effect. Among these, the quantum anomalous Hall effect has been experimentally observed at record-high temperatures, highlighting the unprecedented potential of this family of materials in fundamental science and technological innovation. In this paper, we provide a comprehensive review of the research progress in this intrinsic magnetic topological insulator family, with a focus on single-crystal growth, characterization of chemical disorder, manipulation of magnetism through chemical substitution and external pressure, and important questions that remain to be conclusively answered.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure

Integration of a quantum anomalous Hall insulator with a magnetically ordered material provides an additional degree of freedom through which the resulting exotic quantum states can be controlled. Here, an experimental observation is reported of the quantum anomalous Hall e?ect in a magnet-ically-doped topological insulator grown on the antiferromagnetic insulator Cr?O?. The exchange coupling between the two materials is investigated using ?eld-cooling-dependent magnetometry and polarized neutron re?ec-tometry. Both techniques reveal strong interfacial interaction between the antiferromagnetic order of the Cr?O? and the magnetic topological insulator, manifested as an exchange bias when the sample is ?eld-cooled under an out-of-plane magnetic ?eld, and an exchange spring-like magnetic depth pro?le when the system is magnetized within the ?lm plane. These results identify antiferromagnetic insulators as suitable candidates for the manipula-tion of magnetic and topological order in topological insulator ?lms.

Pan, Lei↗
DOE OSTI2024

High-temperature quantum valley Hall effect with quantized resistance and a topological switch

Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. In this work, we show wide resistance plateaus in kink states—a manifestation of the quantum valley Hall effect in Bernal bilayer graphene—quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 kelvin and is flat within a dc bias window of tens of millivolts. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.

Science & Technology - Other Topics↗
DOE OSTI2025

Fractional Quantum Anomalous Hall Effect

The realization of the fractional quantum anomalous Hall effect (FQAHE) in a zero-field fractional Chern insulator is a new advancement in condensed matter physics, resulting from the interplay among strong correlations, topology, and spontaneous time-reversal symmetry breaking in lattice systems. In this review, we highlight the experimental and theoretical progress toward achieving FQAHE in two material platforms: twisted bilayer MoTe 2 and rhombohedral-stacked multilayer graphene. These systems host narrow topological bands with nontrivial Chern numbers, enabling interaction-driven fractionalized states analogous to the fractional quantum Hall effect, but without external magnetic fields. We discuss how spontaneous ferromagnetism, moiré lattice reconstruction, and band topological effects underpin the emergence of FQAHE in twisted MoTe 2 . We describe experimental discoveries of zero-field fractional Chern insulators in both transport and optical experiments, as well as signatures of composite Fermi liquids and higher-energy Chern band, which may shed light on engineering nonabelian states. In rhombohedral graphene/hexagonal boron nitride moiré superlattices, we review the recent observations of fractionally quantized Hall resistance, connections between FQAHE and extended quantum anomalous Hall phases, and the coexistence of superconductivity and FQAHE. Furthermore, these discoveries not only deepen our understanding of strongly correlated topological matter but also open new frontiers for exploring nonabelian anyons, fault-tolerant quantum computation, and topological opto-spintronics free of magnetic fields.

bilayer↗
DOE OSTI2024

Time-reversal invariant topological moiré flat band: A platform for the fractional quantum spin Hall effect

Motivated by recent observation of the quantum spin Hall effect in monolayer germanene and twisted bilayer transition-metal-dichalcogenides (TMDs), we study the topological phases of moir twisted bilayers with time-reversal symmetry and spin sz conservation. By using a continuum model description which can be applied to both germanene and TMD bilayers, we show that at small twist angles the emergent moir flat bands can be topologically nontrivial due to inversion symmetry breaking. Each of these flat bands admits a lowest-Landau-level description for each spin projection in the chiral limit and at magic twist angle. Furthermore, this allows for the construction of a many-body Laughlin state with time-reversal symmetry which can be stabilized by a short-range pseudopotential, and therefore serves as an ideal platform for realizing the so-far elusive fractional quantum spin Hall effect with emergent spin-1/2 U(1) symmetry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Classification of (2 + 1) D invertible fermionic topological phases with symmetry

Here we provide a classification of invertible topological phases of interacting fermions with symmetry in two spatial dimensions for general fermionic symmetry groups G f and general values of the chiral central charge c - . Here G f is a central extension of a bosonic symmetry group G b by fermion parity, (-1) F , specified by a second cohomology class [ω 2 ]∈ $\mathscr{H}^2$(Gb,$\mathbb{Z}_2$). Our approach proceeds by gauging fermion parity and classifying the resulting G b symmetry-enriched topological orders while keeping track of certain additional data and constraints. We perform this analysis through two perspectives, using G-crossed braided tensor categories and Spin(2c - ) 1 Chern-Simons theory coupled to a background G gauge field. These results give a way to characterize and classify invertible fermionic topological phases in terms of a concrete set of data and consistency equations, which is more physically transparent and computationally simpler than the more abstract methods using cobordism theory and spectral sequences. Our results also generalize and provide a different approach to the recent classification of fermionic symmetry-protected topological phases by Wang and Gu, which have chiral central charge c - = 0. We show how the tenfold way classification of topological insulators and superconductors fits into our scheme, along with general nonperturbative constraints due to certain choices of c - and G f . Mathematically, our results also suggest an explicit general parametrization of deformation classes of (2 + 1)D invertible topological quantum field theories with G f symmetry.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Recent progress of MnBi 2 Te 4 epitaxial thin films as a platform for realising the quantum anomalous Hall effect

Since the first realisation of the quantum anomalous Hall effect (QAHE) in a dilute magnetic-doped topological insulator thin film in 2013, the quantisation temperature has been limited to less than 1 K due to magnetic disorder in dilute magnetic systems. With magnetic moments ordered into the crystal lattice, the intrinsic magnetic topological insulator MnBi 2 Te 4 has the potential to eliminate or significantly reduce magnetic disorder and improve the quantisation temperature. Surprisingly, to date, the QAHE has yet to be observed in molecular beam epitaxy (MBE)-grown MnBi 2 Te 4 thin films at zero magnetic field, and what leads to the difficulty in quantisation is still an active research area. Although bulk MnBi 2 Te 4 and exfoliated flakes have been well studied, revealing both the QAHE and axion insulator phases, experimental progress on MBE thin films has been slower. Furthermore, understanding how the breakdown of the QAHE occurs in MnBi 2 Te 4 thin films and finding solutions that will enable mass-produced millimetre-size QAHE devices operating at elevated temperatures are required. In this mini-review, we will summarise recent studies on the electronic and magnetic properties of MBE MnBi 2 Te 4 thin films and discuss mechanisms that could explain the failure of the QAHE from the aspects of defects, electronic structure, magnetic order, and consequences of their delicate interplay. Finally, we propose several strategies for realising the QAHE at elevated temperatures in MnBi 2 Te 4 thin films.

36 MATERIALS SCIENCE↗