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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Deep learning with plasma plume image sequences for anomaly detection and prediction of growth kinetics during pulsed laser deposition

Abstract Materials synthesis platforms that are designed for autonomous experimentation are capable of collecting multimodal diagnostic data that can be utilized for feedback to optimize material properties. Pulsed laser deposition (PLD) is emerging as a viable autonomous synthesis tool, and so the need arises to develop machine learning (ML) techniques that are capable of extracting information from in situ diagnostics. Here, we demonstrate that intensified-CCD image sequences of the plasma plume generated during PLD can be used for anomaly detection and the prediction of thin film growth kinetics. We develop multi-output (2 + 1)D convolutional neural network regression models that extract deep features from plume dynamics that not only correlate with the measured chamber pressure and incident laser energy, but more importantly, predict parameters of an auto-catalytic film growth model derived from in situ laser reflectivity experiments. Our results demonstrate how ML with in situ plume diagnostics data in PLD can be utilized to maintain deposition conditions in an optimal regime. Further, the predictive capabilities of plume dynamics on the kinetics of film growth or other film properties prior to deposition provides a means for rapid pre-screening of growth conditions for the non-expert, which promises to accelerate materials optimization with PLD.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Pristine Interface between Lithium Lanthanum Zirconate and Lithium Manganese Oxide by Pulsed Laser Deposition

Solid state lithium-ion batteries have garnered increasing interest in recent years due to several potential advantages over liquid-electrolyte based systems. The possibility of integrating the lithium garnet oxide, Li 6.75 La 3 Zr 1.75 Ta 0.25 O 12 (LLZTO), with the high voltage cathode, spinel Li x Mn 2 O 4 (LMO), is evaluated here. Thin film bilayer structures are prepared by pulsed laser deposition on MgO (001) substrates and characterized by x-ray diffraction and transmission electron microscopy. The LLZTO is grown by an alternating layer-by-layer deposition of LLZTO and Li 3 N and subsequently annealed for several hours at 575 °C to promote crystallinity. Growth of crystalline LMO with a pristine interface to LLZTO is achieved by gentle heat treatment (500 °C) to remove surface carbonate from the electrolyte and by cathode growth at a low temperature of 250 °C. Higher temperature depositions (330 – 450 °C) result in reaction between the two materials and the appearance of Li 2 MnO 3 , which may be in part due to the presence of excess lithium in the electrolyte layer. Because fully lithiated LiMn 2 O 4 has a voltage of ≈3.7 V versus Li+/Li, the observation of a well-defined interface, free of impurity phases and with no interdiffusion of elements, indicates LLZTO is stable to at least 3.7 V.

Garnet LLZO↗
NASA NTRS1996

Surface Chemistry, Friction, and Wear Properties of Untreated and Laser-Annealed Surfaces of Pulsed-Laser-Deposited WS(sub 2) Coatings

An investigation was conducted to examine the surface chemistry, friction, and wear behavior of untreated and annealed tungsten disulfide (WS2) coatings in sliding contact with a 6-mm-diameter 440C stainless-steel ball. The WS2 coatings and annealing were performed using the pulsed-laser-deposition technique. All sliding friction experiments were conducted with a load of 0.98 N (100 g), an average Hertzian contact pressure of 0.44 GPa, and a constant rotating speed of 120 rpm. The sliding velocity ranged from 31 to 107 mm/s because of the range of wear track radii involved in the experiments. The experiment was performed at room temperature in three environments: ultrahigh vacuum (vacuum pressure, 7X(exp -10) Pa), dry nitrogen (relative humidity, less than 1 percent), and humid air (relative humidity, 15 to 40 percent). Analytical techniques, including scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDX), x-ray photo electron spectroscopy (XPS), surface profilometry, and Vickers hardness testing, were used to characterize the tribological surfaces of WS2 coatings. The results of the investigation indicate that the laser annealing decreased the wear of a WS2 coating in an ultrahigh vacuum. The wear rate was reduced by a factor of 30. Thus, the laser annealing increased the wear life and resistance of the WS2 coating. The annealed WS 2 coating had a low coefficient of friction (less than O.1) and a low wear rate ((10(exp -7) mm(exp 3)/N-m)) both of which are favorable in an ultrahigh vacuum.

Miyoshi, Kazuhisa↗
DOE OSTI2025

Pulsed laser deposition of delafossite oxide thin films on YSZ (001) substrates as solar water splitting photocathodes

Development of solar energy converters with earth-abundant and environmentally friendly materials is one of the key routes explored towards a sustainable future. In this work, crystalline delafossite-phase CuAlO 2 and CuFeO 2 thin film solar water splitting photocathodes were fabricated using pulsed laser deposition. It was found that the desired delafossite phase was formed only after high temperature annealing in an oxygen-free atmosphere. Further, the homogeneous delafossite bulk structure of the films was determined by correlating simulation results from first-principles calculations with synchrotron-based X-ray absorption near edge structure (XANES) spectroscopy. Both CuAlO 2 and CuFeO 2 photocathodes are active for solar water splitting, with the latter more efficient due to its narrower band gap and improved light absorption.

36 MATERIALS SCIENCE↗
NASA NTRS2004

In situ Pulsed Laser Deposition of C-Axis Oriented MgB2 Films and Their Characterization

The recent discovery of an intermetallic superconductor MgB2 has renewed interest in the area of superconductivity not only because of fundamental understanding of superconductivity but also due to its potential applicability in devices such as thermal detectors. Considerable amount of research has been devoted to obtain MgB2 films by an all in situ growth technique. We have grown MgB2 thin films by an all in situ pulsed laser deposition process from pure B and Mg targets. Ultrathin layers of B and Mg were deposited in a multilayer configuration. Hundreds of such Mg-B bilayers with a capping Mg layer on the top were deposited on sapphire substrate. These depositions were done in high vacuum (approx. 10(exp -7) Torr) and at room temperature. After deposition, such a configuration was annealed at high temperature for a short time in a forming gas (4% H2 in Ar). The best films, obtained by this procedure, showed superconducting transition temperature approx. 30 K. These films have been characterized by x-ray diffraction, Rutherford Backscattering Spectrometry, AC susceptibility-, resistivity- (with and without magnetic field) and 1/f noise-measurements. The physical properties of these films will be presented and discussed.

Shinde, Sanjay↗
NASA NTRS2000

Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser Deposition

The properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.

Zhu, Shen↗
NASA NTRS2004

Plasma-Enhanced Pulsed Laser Deposition of Wide Bandgap Nitrides for Space Power Applications

The need for a reliable, inexpensive technology for small-scale space power applications where photovoltaic or chemical battery approaches are not feasible has prompted renewed interest in radioisotope-based energy conversion devices. Although a number of devices have been developed using a variety of semiconductors, the single most limiting factor remains the overall lifetime of the radioisotope battery. Recent advances in growth techniques for ultra-wide bandgap III-nitride semiconductors provide the means to explore a new group of materials with the promise of significant radiation resistance. Additional benefits resulting from the use of ultra-wide bandgap materials include a reduction in leakage current and higher operating voltage without a loss of energy transfer efficiency. This paper describes the development of a novel plasma-enhanced pulsed laser deposition system for the growth of cubic boron nitride semiconducting thin films, which will be used to construct pn junction devices for alphavoltaic applications.

Triplett, G. E., Jr.↗
DOE OSTI2025

Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources

The development of high-brightness electron sources is critical to state-of-the-art electron accelerator applications like X-ray free electron laser (XFEL) and ultra-fast electron microscopy. Cesium telluride is chosen as the electron source material for multiple cutting-edge XFEL facilities worldwide. This manuscript presents the first demonstration of the growth of highly crystalized and epitaxial cesium telluride thin films on 4H-SiC and graphene/4H-SiC substrates with ultrasmooth film surfaces. The ordering of the film was characterized by in situ reflection high energy electron diffraction and multiple X-ray diagnostics. The results of the quantum efficiency performance for epitaxial cesium telluride photocathodes are also reported.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

Variation in supercurrent connectivity and vortex pinning of state-of-the-art pulsed laser deposited RE Ba 2 Cu 3 O 7- x coated conductors

REBa 2 Cu 3 O 7-x (REBCO, RE: rare earth) coated conductors (CCs) suffer from great critical current I c differences between different manufacturers, I c variations within individual manufacturers, and often significant lengthwise fluctuations. The understanding of such variations is complicated by the lack of a direct correlation between I c and the critical current density J c . In fact, although J c is the fundamental property determined by the local vortex pinning landscape, I c is often limited by variable current blocking mechanisms. An important practical complexity is commercial practices of performing J c and I c evaluations based on I c at 77 K and self-field (sf), where connectivity variation dominates over vortex pinning variations. However, at higher fields and lower temperatures, vortex pinning becomes more complex and highly variable, making predictions of I c and J c at arbitrary temperature T, magnetic field H, and field orientation θ, quite uncertain. To address some aspects of this problem, we conducted detailed spool-to-spool performance characterization on recently manufactured REBCO CCs. Despite J c (77 K, sf) varies by only ∼11%, J c (77 K, 1 T) of its minimum and maximum (for H//ab-plane) show variations of ∼21% and ∼32%, respectively. This emphasizes the shortcoming in using J c (77 K, sf) as parameter for evaluating even the low field performance. An even more remarkable spool-to-spool J c variation of ∼68% was observed at 20 K and 15 T for H//ab-plane. To identify the origin of such lack of reproducibility we performed microstructural characterizations, which revealed, within the REBCO layer, large variation in the density of copper oxide (CuO x ) particles ranging from 0.1 to 2 μm in size. We believe that they play a decisive role in reducing the effective cross-section of the REBCO layer by not simply blocking current themselves, but also by nucleating off-axis REBCO grains, whose misoriented grain boundaries adversely impact REBCO grain-to-grain connectivity. The REBCO growth associated with high density CuO x particles also leads to the more disordered spatial arrangement of BaHfO 3 precipitate arrays, which, when self-aligning along the ab-planes, generate stronger pinning enhancing J c (H//ab) at all temperatures. In this way, we established that variations of both connectivity and vortex pinning are thus directly coupled. Our results also explain why the so-called ‘lift-factor’, typically defined by the ratio between I c (T, H) and I c (77 K, sf), frequently turns out to be unreliable.

36 MATERIALS SCIENCE↗
NASA NTRS1993

Thin film processing of photorefractive BaTiO3

During the period covered by this report, October 11, 1991 through October 10, 1992, the research has progressed in a number of different areas. The sol-gel technique was initially studied and experimentally evaluated for depositing films of BaTiO3. The difficulties with the precursors and the poor quality of the films deposited lead to the investigation of pulsed laser deposition as an alternative approach. The development of the pulsed laser deposition technique has resulted in continuous improvements to the quality of deposited films of BaTiO3. The initial depositions of BaTiO3 resulted in amorphous films, however, as the pulsed laser deposition technique continued to evolve, films were deposited in the polycrystalline state, then the textured polycrystalline state, and most recently heteroepitaxial films have also been successfully deposited on cubic (100) oriented SrTiO3 substrates. A technique for poling samples at room temperature and in air is also undergoing development with some very preliminary but positive results. The analytical techniques, which include x-ray diffraction, ferroelectric analysis, UV-Vis spectrophotometry, scanning electron microscopy with x-ray compositional analysis, optical and polarized light microscopy, and surface profilometry have been enhanced to allow for more detailed evaluation of the samples. In the area of optical characterization, a pulsed Nd:YAG laser has been incorporated into the experimental configuration. Now data can also be acquired within various temporal domains resulting in more detailed information on the optical response of the samples and on their photorefractive sensitivity. The recent establishment of collaborative efforts with two departments at Johns Hopkins University and the Army Research Lab at Fort Belvoir has also produced preliminary results using the metallo-organic decomposition technique as an alternative method for thin film processing of BaTiO3. RF and DC sputtering is another film deposition approach that should be initiated in the near future. Other techniques for optical characterization, which may even allow for intragrannular (within single grains) investigations, are also being considered.

Schuster, Paul R.↗
DOE OSTI2024

Effect of Substrate Temperature on the Electrochemical and Supercapacitance Properties of Pulsed Laser-Deposited Titanium Oxynitride Thin Films

Electrocatalytically active titanium oxynitride (TiNO) thin films were fabricated on commercially available titanium metal plates using a pulsed laser deposition method for energy storage applications. The elemental composition and nature of bonding were analyzed using X-ray photoelectron spectroscopy (XPS) to reveal the reacting species and active sites responsible for the enhanced electrochemical performance of the TiNO electrodes. Symmetric supercapacitor devices were fabricated using two TiNO working electrodes separated by an ion-transporting layer to analyze their real-time performance. The galvanostatic charge–discharge studies on the symmetric cell have indicated that TiNO films deposited on the polycrystalline titanium plates at lower temperatures are superior to TiNO films deposited at higher temperatures in terms of storage characteristics. For example, TiNO films deposited at 300 °C exhibited the highest specific capacity of 69 mF/cm 2 at 0.125 mA/cm 2 with an energy density of 7.5 Wh/cm 2 . The performance of this supercapacitor (300 °C TiNO) device is also found to be ~22% better compared to that of a 500 °C TiNO supercapacitor with a capacitance retention ability of 90% after 1000 cycles. Furthermore, the difference in the electrochemical storage and capacitance properties is attributed to the reduced leaching away of oxygen from the TiNO films by the Ti plate at lower deposition temperatures, leading to higher oxygen content in the TiNO films and, consequently, a high redox activity at the electrode/electrolyte interface.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2024

Single-source pulsed laser-deposited perovskite solar cells with enhanced performance via bulk and 2D passivation

Single-source vapor deposition of halide perovskites has, to date, remained challenging due to the dissimilar volatilities of the precursors, limiting the controlled transfer of multiple elements at once. Here, we demonstrate that pulsed laser deposition (PLD) addresses the rate-control challenges of single-source evaporation, enabling perovskite solar cells with power conversion efficiencies above 19% after passivation. Combining dry mechanochemical synthesis and PLD, we fabricated (Cl-passivated) MA1−xFAxPbI3 films from a single-source target. These films grow on hole-selective self-assembled monolayers, initially forming a thin PbI2-rich layer, which fully converts to perovskite. An oleylammonium iodide (OAmI) post-treatment is then applied to passivate the perovskite’s top surface by forming a 2D perovskite film. Incorporating PbCl2 in the target and applying OAmI-based 2D passivation results in a remarkable 19.7% efficiency for p-i-n perovskite solar cells with enhanced device stability. This highlights the appeal of PLD to fully unlock the potential of single-source vapor-deposited perovskites.

Soto-Montero, Tatiana↗
DOE OSTI2024

In-situ kinetic study of irradiation induced crystallization in amorphous Al 2 O 3

In the last ten years amorphous alumina coatings, deposited by Pulsed Laser Deposition, emerged as potential key enabling technology in the fields of heavy liquid metal fast reactors (lead and lead-bismuth) and fusion. In the former, as coating of the steel fuel cladding and in the latter as multifunctional coating providing a barrier against tritium permeation, steel corrosion and electrical insulation. Nevertheless, a detailed knowledge of the behavior of this thermodynamically metastable material at high temperatures and under neutron irradiation is still unknown. A knowledge gap that is mandatory to fill up for the deployment of this barrier technology. In the present work, we present a first step towards this goal, by the in-situ dynamic observation of the radiation induced crystallization processes of thin films of amorphous Al 2 O 3 , induced by ion-irradiation over an extensive range of temperatures (400-800 °C). The study was performed at the Intermediate Voltage Electron Microscope (IVEM)-Tandem Facility at Argonne National Laboratory. The experimental findings allow to elucidate the dependence of the grain growth on ion dose and temperature. A kinetic approach has been used to derive the process activation energies and other important parameters.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Growth of ultra-flat ultra-thin alkali antimonide photocathode films

Ultra-flat, ultra-thin alkali antimonide photocathodes with high crystallinity can exhibit high quantum efficiency and low mean transverse energy of outgoing electrons, which are essential requirements for a variety of applications for photocathode materials. Here, we investigate the growth of Cs 3 Sb on graphene-coated 4H–SiC (Gr/4H–SiC), 3C–SiC, and Si 3 N 4 substrates. Sb is deposited using pulsed laser deposition, while Cs is deposited thermally and simultaneously. We demonstrate, employing x-ray analysis and quantum efficiency measurements, that this growth method yields atomically smooth Cs 3 Sb photocathodes with a high quantum efficiency (>10%), even in the ultra-thin limit (<30 nm). For the Si 3 N 4 substrate, film growth is shown to be polycrystalline, while films grown on Gr/4H–SiC show a high degree of ordering with signs of epitaxy.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Comparison of Nb and Ta Pentoxide Loss Tangents for Superconducting Quantum Devices

Superconducting transmon qubits are commonly made with thin-film Nb wiring, but recent studies have shown increased performance with Ta wiring. In this work, we compare the resonator-induced single photon, millikelvin dielectric loss for pentoxides of Nb (Nb2O5) and Ta (Ta2O5) in order to further understand limiting losses in qubits. Nb and Ta pentoxides of three thicknesses are deposited via pulsed laser deposition onto identical coplanar waveguide resonators. The two-level system (TLS) loss in Nb2O5 is determined to be about 30% higher than that of Ta2O5. This work indicates that qubits with Nb wiring are affected by higher loss arising from the native pentoxide itself, likely in addition to the presence of suboxides, which are largely absent in Ta.

Goronzy, D. P. [Northwestern U.]↗