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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Nanocluster Evolution in D9 Austenitic Steel under Neutron and Proton Irradiation

Austenitic stainless steel D9 is a candidate for Generation IV nuclear reactor structural materials due to its enhanced irradiation tolerance and high-temperature creep strength compared to conventional 300-series stainless steels. But, like other austenitic steels, D9 is susceptible to irradiation-induced clustering of Ni and Si, the mechanism for which is not well understood. This study utilizes atom probe tomography (APT) to characterize the chemistry and morphology of Ni–Si nanoclusters in D9 following neutron or proton irradiation to doses ranging from 5–9 displacements per atom (dpa) and temperatures ranging from 430–683 °C. Nanoclusters form only after neutron irradiation and exhibit classical coarsening with increasing dose and temperature. The nanoclusters have Ni 3 Si stoichiometry in a Ni core–Si shell structure. This core–shell structure provides insight into a potentially unique nucleation and growth mechanism—nanocluster cores may nucleate through local, spinodal-like compositional fluctuations in Ni, with subsequent growth driven by rapid Si diffusion. This study underscores how APT can shed light on an unusual irradiation-induced nanocluster nucleation mechanism active in the ubiquitous class of austenitic stainless steels.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Proton irradiation effects in Molybdenum-Carbide-Graphite composites

The High Luminosity upgrade of the Large Hadron Collider (HL-LHC) has prompted the investigation of novel materials for beam-intercepting devices, and in particular for the collimators responsible for protecting the machine from beam losses. The HL-LHC collimation system will inevitably experience increased levels of radiation damage and undergo changes in their crucial physio-mechanical properties. Graphite-matrix composite materials containing molybdenum carbide particles, along with small amounts of titanium carbide, were developed with the objective of enhanced in-beam performance and tested under proton irradiation. The physical degradation observed in early grades of molybdenum carbide compounds, even after modest proton fluences, has prompted the development of advanced compounds. In this work, we examine the effects of proton irradiation on the microstructural and thermophysical properties of new grades of Molybdenum-carbide-graphite compounds up to fluences of ~2 × 10 20 p/cm 2 . Here, we employ a combination of precision dilatometry and high-energy X-ray diffraction to quantify the dimensional stability and crystallographic phase evolution both pre- and post-irradiation. Our results reveal that these new compounds exhibit superior resilience to radiation damage than their predecessors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Effects of 63 MeV proton irradiation on the performance of MWIR InGaAs/InAsSb nBn photodetectors

An investigation into the effects of 63 MeV proton irradiation on high-sensitivity mid-wave infrared InGaAs/InAsSb nBn devices is performed. Three different structures with various absorber region doping profiles are irradiated and characterized to assess their impact on performance degradation. Minority carrier lifetime is measured using time-resolved photoluminescence and lifetime damage factors are assessed. The majority carrier concentration is determined via capacitance–voltage measurements and dopant introduction rates are calculated. An analysis of dark current density is performed using these material parameters, revealing a reduction in mobility with proton fluence and the emergence of a proton-induced trap energy level. Quantum efficiency is calculated at each proton fluence, and quantum efficiency damage factors show that the graded doping structure exhibits the least reduction of quantum efficiency with dose, attributed to its effective mobility enhancement. Conclusively, detector sensitivity, assessed via shot-noise limited noise-equivalent irradiance, shows that the graded doping structure is the least susceptible to high energy proton irradiation-induced performance degradation.

Physics↗
DOE OSTI2020

Cellular Response to Proton Irradiation: A Simulation Study with TOPAS-nBio

The cellular response to ionizing radiation continues to be of significant research interest in cancer radiotherapy, and DNA is recognized as the critical target for most of the biologic effects of radiation. Incident particles can cause initial DNA damages through physical and chemical interactions within a short time scale. Initial DNA damages can undergo repair via different pathways available at different stages of the cell cycle. The misrepair of DNA damage results in genomic rearrangement and causes mutations and chromosome aberrations, which are drivers of cell death. This work presents an integrated study of simulating cell response after proton irradiation with energies of 0.5–500 MeV (LET of 60–0.2 keV/µm). A model of a whole nucleus with fractal DNA geometry was implemented in TOPAS-nBio for initial DNA damage simulations. The default physics and chemistry models in TOPAS-nBio were used to describe interactions of primary particles, secondary particles, and radiolysis products within the nucleus. The initial DNA double-strand break (DSB) yield was found to increase from 6.5 DSB/Gy/Gbp at low-linear energy transfer (LET) of 0.2 keV/µm to 21.2 DSB/Gy/Gbp at high LET of 60 keV/µm. A mechanistic repair model was applied to predict the characteristics of DNA damage repair and dose response of chromosome aberrations. It was found that more than 95% of the DSBs are repaired within the first 24 h and the misrepaired DSB fraction increases rapidly with LET and reaches 15.8% at 60 keV/µm with an estimated chromosome aberration detection threshold of 3 Mbp. The dicentric and acentric fragment yields and the dose response of micronuclei formation after proton irradiation were calculated and compared with experimental results.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2023

Effects of Proton Irradiation on GaN Vacuum Electron Nanodiodes

Gallium nitride (GaN)-based nanoscale vacuum electron devices, which offer advantages of both traditional vacuum tube operation and modern solid-state technology, are attractive for radiation-hard applications due to the inherent radiation hardness of vacuum electron devices and the high radiation tolerance of GaN. Here, we investigate the radiation hardness of top-down fabricated n-GaN nanoscale vacuum electron diodes (NVEDs) irradiated with 2.5-MeV protons (p) at various doses. We observe a slight decrease in forward current and a slight increase in reverse leakage current as a function of cumulative protons fluence due to a dopant compensation effect. The NVEDs overall show excellent radiation hardness with no major change in electrical characteristics up to a cumulative fluence of 5E14 p/cm 2 , which is significantly higher than the existing state-of-the-art radiation-hardened devices to our knowledge. In conclusion, the results show promise for a new class of GaN-based nanoscale vacuum electron devices for use in harsh radiation environments and space applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Effect of proton irradiation temperature on persistent photoconductivity in zinc oxide metal-semiconductor-metal ultraviolet photodetectors

The electrical and structural characteristics of 50-nm-thick zinc oxide (ZnO) metal-semiconductor-metal ultraviolet (UV) photodetectors subjected to proton irradiation at different temperatures are reported and compared. The devices were irradiated with 200 keV protons to a fluence of 1016 cm−2. Examination of the x-ray diffraction (XRD) rocking curves indicates a preferred (100) orientation prior to irradiation, with decrease in crystal quality afterward. Additionally, peak shifts in XRD and Raman spectra of the control sample relative to well-known theoretical positions are indicative of tensile strain in the as-deposited ZnO films. Shifts toward theoretical unstrained positions are observed in the irradiated films, which indicates partial relaxation. Raman spectra also indicate increase in oxygen vacancies (VO) and zinc interstitial defects (Zni) compared to the control sample. Additionally, transient photocurrent measurements performed on each sample at different temperatures showed up to 2× increase in photocurrent decay time constants for irradiated samples vs the control. This persistent photoconductive behavior is linked to the activation of electron and hole traps near the surface, and to the desorption and reabsorption of O2 molecules on the ZnO surface under the influence of UV light. Using an Arrhenius model, trap activation energies were extracted and, by comparing with known energies from the literature, the dominant defects contributing to persistent photoconductivity for each irradiation condition were identified. The persistence of differences in photocurrent transients between different samples months after irradiation indicates that the defects introduced by the suppression of thermally activated dynamic annealing processes have a long-term deleterious effect on device performance.

Heuser, Thomas A. (ORCID:0000000225642400)↗
DOE OSTI2021

Investigation of hardening mechanisms and size effects in proton-irradiated HT-9 steels

Ferritic/martensitic steels, such as HT-9, are known for their complex microstructural features and mechanical properties. Here in this paper, in-situ micro-tensile tests and traditional fractography methods were utilized to study the fracture behavior of proton-irradiated HT-9 steels. First, to evaluate the viability of micro-tensile tests for nuclear material qualification process, meso-tensile tests on as-received HT-9 steels were performed. Fracture mechanisms of unirradiated HT-9 steels at both length scales were compared and underlying mechanisms discussed. The direct comparison of micro- and meso-scale data shows a distinctive size effect demonstrated by the increase in yield stress (YS). Upon completion of initial assessment, specimens were irradiated with 4 MeV + protons to three fluences, all of which were lower than 0.01 displacements per atom (dpa). As expected, the YS increases with irradiation. However, at 7 × 10 -3 dpa, the reversal of the trend was observed, and the YS exhibited sharp decline. We demonstrate that at lower length scales, grain structure has a more profound impact on the mechanical properties of irradiated materials, which provides information needed to fill in the gap in current understanding of the HT-9 fracture at different length scales.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Inferring relative dose-dependent color center populations in proton irradiated thoria single crystals using optical spectroscopy

In this work, we have utilized photoluminescence spectroscopy and optical ellipsometry to characterize the dose-dependence of the photoluminescence emission intensity and changes in optical absorption of thoria single crystals subject to irradiation with energetic protons at room- and elevated-temperatures. The photoluminescence peaks and the optical absorption bands are attributed to creation of new electronic states emerging from defects resulting from displacement damage. These bands are most likely associated with electrons trapped at the oxygen vacancy sites similar to color centers formed in other irradiated oxides and halides. Our experimental observations are supported by a standard density functional theory calculation of the electronic structure in pristine and oxygen vacancy-bearing thoria crystals. The dose-dependence of the intensity of the photoluminescence peaks is used to parameterize a rate theory model that estimates the concentration of color centers in the irradiated crystals. This parameterization provides optimized migration barrier parameters for oxygen interstitials and vacancies that simultaneously capture the optical response of the crystals irradiated at room- and elevated-temperature. These optical spectroscopy techniques offer a promising pathway to characterize the population of color centers formed at the sites of oxygen anion vacancies, particularly in irradiated nuclear fuels, where atomic-level defects cannot be readily imaged using electron microscopy. When combined with other direct and indirect characterization tools, our approach can provide new insight into defect formation and accumulation in energy materials over single atomic to extended length scales.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Anisotropic growth of Ni 2 (Cr,Mo) ordered phase in proton irradiated Ni-Cr-Mo alloys

Ni-Cr-Mo alloys are widely used in the nuclear industry as structural materials due to their high temperature strength and corrosion resistance. Ni-based alloys containing around 33 at.% (Cr+Mo) developed a long-range ordered Ni 2 (Cr,Mo) phase after thermal aging and/or irradiation. The ordering mechanism for thermally-aged Ni 2 (Cr,Mo) phase is well-understood, characterized to be sluggish, homogeneous, and isotropic. The ordering mechanism for irradiation-induced Ni 2 (Cr,Mo) phase is not fully understood, characterized as having rapid formation and demonstrating anisotropic precipitation. Here, this work elucidates the anisotropic precipitation and anisotropic precipitation mechanism of Ni 2 (Cr,Mo) after proton irradiation in Ni-Cr-Mo alloys. Selected area electron diffraction and bright-field scanning transmission electron microscopy imaging are used to image superlattice reflections from the ordered phase and irradiation-induced defects, respectively. A higher degree of anisotropic precipitation is observed with increasing dislocation loop and void size; a phenomenon not observed in thermally aged samples.

36 - MATERIALS SCIENCE↗
DOE OSTI2020

Low-temperature proton irradiation damage of isotropic nuclear grade IG-430 graphite

IG-430, a fine-grained, isotropic graphite grade is a promising candidate for the future Very High Temperature Reactors (VHTR). IG-430 which provides higher density, strength, and thermal conductivity, has already been developed as a graphite for next-generation HTGR, and is expected to be employed. This graphite grade, however, is lacking enough database that is needed for design. The present study aims to enhance the database with experimental data focusing on the low temperature regime (90–210 °C) by using 120–200 MeV protons to irradiate the IG-430 graphite to peak fluence of ~1.2 10 25 m –2 . It is anticipated that radiation-induced changes in the graphite properties and damage to be more pronounced in this low temperature regime than in elevated temperatures where damage annealing is taking place simultaneously. IG-430 graphite was characterized following irradiation for mechanical property changes (modulus and strength), dimensional stability and irradiation-induced growth as well as microstructural changes using high energy X-rays and different X-ray diffraction techniques. In assessing proton irradiation effects on the IG-430 graphite grade, comparison of radiation effects was made with the IG-43 grade, the un-purified version of IG-430, as well as other isotropic graphite grades. IG-430 was shown in this study to be better graphitized than other isotropic graphite grades. The study also revealed that during proton irradiation at low temperatures (~100 °C) the IG-430 exhibits stored energy release.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Dislocation Loops in Proton Irradiated Uranium-Nitrogen-Oxygen System

Here in this study, we investigated the dislocation loop types formed in the proton-irradiated uranium-nitrogen-oxygen (U-N-O) system, which involves uranium mononitride (UN), uranium sesquinitride (a-U2N3), and uranium dioxide (UO2) phases. The dislocation loop formation is examined using specimens irradiated at 400°C and 710°C. Based on the detailed transmission-based electron microscopy characterization with i) the morphology-based on-zone and ii) the invisibility-criterion based two-beam condition imaging techniques, only a single type of dislocation loop in each phase is found: a/2?110?, a/2?111?, or a/3?111? dislocation loops in UN, a-U2N3, and UO2 phases, respectively. Molecular statics calculations for the formation energy of perfect and faulted dislocation loops in UN phases indicate a critical loop size of ~ 6 nm, above which perfect loops are energetically favorable. This could explain the absence of faulted loops in the experimental observation of the irradiated UN phase at two temperatures. This work will enhance the understanding of irradiation induced microstructural evolution for uranium nitrides as advanced nuclear fuels for the next-generation nuclear reactors.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Charge Trap Layer Supercharging for Improved Bit Reliability in 3-D NAND Flash Under Proton Irradiation

Single-event upset (SEU) cross sections are reduced in 176-layer charge trap (CT) 3-D nand devices under proton irradiation when multiple write operations are applied sequentially without the typical erase-before-write. Here, this effect is observed for multiple data patterns and in both single-level cell (SLC) and triple-level cell (TLC) operating modes. SEU cross section calculation methodologies are discussed for highly scaled 3-D devices both with and without the application of rewrites, and potential implications for long-term endurance effects are proposed.

Breeding, Matthew Luel [Sandia National Laboratori↗
DOE OSTI2026

Resilience of High-Efficiency CdSeTe:As and CdSeTe:Cu Solar Cells to Proton Irradiation

Power generation in space is currently dominated by expensive III-V multi-junction photovoltaic (PV) devices and cheap crystalline silicon (c-Si) PV devices. Both of these technologies degrade rapidly in proton-radiation-rich space environments, such as the Van Allen belt. The present study of cadmium selenide telluride- (CdSeTe-) based PV devices exposed to 150-to-1500 keV proton irradiation with fluences up to 9 x 1013 cm-2 reveal a more radiation-hard alternative to III-V and c-Si PV technologies. We report on measurement and analysis of current density vs voltage (JV), external quantum efficiency (EQE), external radiative efficiency, and capacitance vs voltage (CV) characteristics. JV characteristics of As-doped CdSeTe devices show 80% remaining power conversion efficiency (PCE) relative to unexposed controls when exposed to 650 keV protons at a fluence of 1012 cm-2. Under these same irradiation conditions, Cu-doped CdSeTe devices demonstrate an even better 95% PCE retention compared with unirradiated control devices. Evidence of radiation-induced absorber p-type doping compensation is observed in the glass-side EQE at 0 V and CV characteristics of most of the irradiated CdSeTe:As devices, but clear compensation is evident only for the most heavily irradiated CdSeTe:Cu devices. Elevated blue-green photocurrent in the film-side 0 V EQE suggests a buried junction in the most heavily irradiated CdSeTe:As devices. Although CdSeTe:Cu devices are the more resilient of the CdSeTe structures, both CdSeTe-based technologies are radiation-hard when compared to c-Si and III-V multi-junction PV.

14 SOLAR ENERGY↗
DOE OSTI2020

Proton irradiation and characterization of additively manufactured 304L stainless steels

Irradiations were performed with 1.5 MeV protons to 0.6 dpa at 40–150 °C on additively manufactured (AM) 304L stainless steel and the changes in microstructure and mechanical behavior after irradiation were compared to wrought 304L stainless steel. Interestingly, all microstructural and hardness results after irradiation suggest the samples evolve toward a similar state, despite significant differences in the unirradiated microstructures and hardness values. A TEM and nanoindentation-based investigation of before and after proton irradiation at 40–150 °C is presented. Results are interpreted in terms of initial dislocation content, dislocation structures, and microstructural and chemical homogeneity.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A Model for Radiolysis in a Flowing-Water Target during High-Intensity Proton Irradiation

At the Facility for Rare Isotope Beams (FRIB), interactions between heavy-ion beams and beam-dump water will create a wide variety of radionuclides which can be accessed by a technique known as “isotope harvesting”. However, irradiation of water is always accompanied by the creation of numerous radical, ionic, and molecular radiolysis products. Some of the radiolysis products have sufficiently long lifetimes to accumulate in the irradiated water and affect the harvesting chemistry. Here we investigate the formation of hydrogen peroxide, molecular hydrogen, and molecular oxygen during a high-intensity proton irradiation of a flowing-water isotope-harvesting target and compare the experimental results to simulations. The simulations kinetically model the chemical reactions occurring in the homogeneous phase of radiolysis in flowing water and establish an “effective yield”. In both the experiment and simulations, the bulk quantities of H 2 , H 2 O 2 , and O 2 are considerably lower than predicted by primary radiolysis yields (escape yields), meaning that in the high beam intensity regime the homogeneous phase reactions have a considerable impact on the overall chemical composition of the water. Further, it could be shown that for radiation which is characterized by a limited linear energy transfer, such as the here applied protons, the bulk outcome of the microscopic kinetic modeling could be estimated by a simplified steady-state model.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Charge density wave and superconductivity competition in Lu 5 Ir 4 Si 10 : A proton irradiation study

Real-space modulated charge density waves (CDW) are a ubiquitous feature in many families of superconductors. In particular, how CDW relates to superconductivity is an active and open question that has recently gathered much interest since CDWs have been discovered in many cuprates superconductors. Here we show that disorder induced by proton irradiation is a full-fledged tuning parameter that can bring essential information to answer this question as it affects CDW and superconductivity with different and unequivocal mechanisms. Specifically, in the model CDW superconductor Lu 5 Ir 4 Si 10 that develops a 1D CDW below 77 K and s-wave superconductivity below 4 K, we show that disorder enhances the superconducting critical temperature T c and H c2 while it suppresses the CDW. Discussing how disorder affects both superconductivity and the CDW, we make a compelling case that superconductivity and CDW are competing for electronic density of states at the Fermi level in Lu 5 Ir 4 Si 10 , and we reconcile the results obtained via the more common tuning parameters of pressure and doping. Owing to its prototypical, 1D, Peierls type CDW and the s-wave, weak-coupling nature of its superconductivity, this irradiation study of Lu 5 Ir 4 Si 10 provides the basis to understand and extend such studies to the more complex cases of density waves and superconductivity coexistence in heavy fermions, Fe-based, or cuprates superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Separation of terbium from proton-irradiated gadolinium oxide targets – development of an effective, scalable and automatable process

This work reports an effective and scalable radiochemical separation process for isolating terbium from Gd 2 O 3 . The separation process uses three commercially available extraction chromatography resin columns, has been implemented on a computer-controlled chemistry module, and tested with 100 mg quantities of proton-irradiated nat Gd 2 O 3 . Here, the 4-hour separation procedure isolated radioterbium in 1.3 mL of 0.01 M HCl with 80 ±8% radiochemical yield and a Gd decontamination factor >(1.2 ± 0.3)·10 5 .

Adjacent lanthanide separation↗
DOE OSTI2025

Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.

43 PARTICLE ACCELERATORS↗