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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Modeling and Simulation of a 5.8kV SiC PiN Diode for Inductive Pulsed Plasma Thruster Applications

Current ringing in an Inductive Pulsed Plasma Thruster (IPPT) can lead to reduced energy efficiency, excess heating, and wear on circuit components such as capacitors and solid state devices. Clamping off the current using a fast turn-off power diode is an effective way to reduce current ringing and increase energy efficiency. A diode with a shorter reverse recovery time will allow the least amount of current to ring back through the circuit, as well as minimize switching losses. The reverse recovery response of a new 5.8 kilovolt SiC PiN diode from Cree, Inc. in the IPPT plasma drive circuit is investigated using a physicsbased Simulink model, and compared with that of a 5SDF 02D6004 5.5 kilovolt fast-switching Si diode from ABB. Parameter extraction was carried out for each diode using both datasheet specifications and experimental waveforms, in order to most accurately adapt the model to the specific device. Further experimental data will be discussed using a flat-plate IPPT developed at NASA Marshall Space Flight Center and used to verify the simulation results. A final quantitative measure of circuit efficiency will be described for both the Si and SiC diode configuration.

Toftul, Alexandra↗
DOE OSTI2020

Experimental determination of the thermal, turbulent, and rotational ion motion and magnetic field profiles in imploding plasmas

A tutorial is presented on advances in spectroscopic diagnostic methods developed for measuring key plasma properties in pulsed-power systems such as Z-pinches, magnetized-plasma compression devices, ion and electron diodes, and plasma switches. The parameters measured include the true ion temperature in Z-pinch implosions, which led to a discovery that much of the ion kinetic energy at stagnation is stored in hydrodynamic rather than in thermal motion. This observation contributed a new important insight into the understanding of the ion thermalization at stagnation and stimulated further investigations of turbulence at stagnation, discussed here too. The second part of this tutorial is devoted to the development of measurements for magnetic-field distributions in Z-pinches and in other pulsed-power systems, as well as their use in studying the plasma dynamics, resistivity, and pressure and energy balance. The latter study raises intriguing questions on the implosion process. In particular, in Z-pinches, the current during stagnation was found to largely flow at relatively large radii, outside the stagnation region. The magnetic-field measurements also enable investigations into the compression of a pre-magnetized cylindrical plasma that uncover striking phenomena related to the current flow, where the current was found to redistribute toward the outer regions during the implosion. Observation of the rotation of the magnetized plasma is also discussed. Lastly, experimental and theoretical investigations of a non-diffusive fast penetration of magnetic field into a low-density plasma, including its effect on the plasma dynamics, are described

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1989

High-frequency instability of the sheath-plasma resonance

Coherent high-frequency oscillations near the electron plasma frequency are generated by electrodes with positive dc bias immersed in a uniform Maxwellian afterglow plasma. The instability occurs at the sheath-plasma resonance and is driven by a negative RF sheath resistance associated with the electron inertia in the diodelike electron-rich sheath. With increasing dc bias, i.e., electron transit time, the instability exhibits a hard threshold, downward frequency pulling, line broadening, and copious harmonics. The fundamental instability is a bounded oscillation caused by wave evanescence, but the harmonics are radiated as electromagnetic waves from the electrodes acting like antennas. Wavelength and polarization measurements confirm the emission process. Electromagnetic waves are excited by electrodes of various geometries (planes, cylinders, spheres), which excludes other radiation mechanisms such as orbitrons or beam-plasma instabilities. The line-broadening mechanism has been identified as a frequency modulation via the electron transit time by dynamic ions. Ion oscillations at the sheath edge give rise to burstlike RF emissions. These laboratory observations of a new instability are important for antennas in space plasmas, generation of coherent beams with diodes, and plasma diagnostics.

Stenzel, R. L.↗
NASA NTRS2013

Monitoring Temperature in High Enthalpy Arc-heated Plasma Flows using Tunable Diode Laser Absorption Spectroscopy

A tunable diode laser sensor was designed for in situ monitoring of temperature in the arc heater of the NASA Ames IHF arcjet facility (60 MW). An external cavity diode laser was used to generate light at 777.2 nm and laser absorption used to monitor the population of electronically excited oxygen atoms in an air plasma flow. Under the assumption of thermochemical equilibrium, time-resolved temperature measurements were obtained on four lines-of-sight, which enabled evaluation of the temperature uniformity in the plasma column for different arcjet operating conditions.

Martin, Marcel Nations↗
NASA NTRS2014

Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

Testing of a 5.5 kV silicon (Si) diode and 5.8 kV prototype silicon carbide (SiC) diode in an inductive pulsed plasma thruster (IPPT) circuit was performed to obtain a comparison of the resulting circuit recapture efficiency,eta(sub r), defined as the percentage of the initial charge energy remaining on the capacitor bank after the diode interrupts the current. The diode was placed in a pulsed circuit in series with a silicon controlled rectifier (SCR) switch, and the voltages across different components and current waveforms were collected over a range of capacitor charge voltages. Reverse recovery parameters, including turn-off time and peak reverse recovery current, were measured and capacitor voltage waveforms were used to determine the recapture efficiency for each case. The Si fast recovery diode in the circuit was shown to yield a recapture efficiency of up to 20% for the conditions tested, while the SiC diode further increased recapture efficiency to nearly 30%. The data presented show that fast recovery diodes operate on a timescale that permits them to clamp the discharge quickly after the first half cycle, supporting the idea that diode-clamping in IPPT circuit reduces energy dissipation that occurs after the first half cycle

Toftul, Alexandra↗
DOE OSTI2021

Direct comparison of wire, foil, and hybrid X-pinches on a 200 kA, 150 ns current driver

Wire X-pinches (WXPs) have been studied comprehensively as fast (~1 ns pulse width), small (~1 μm) x-ray sources, created by twisting two or more fine wires into an “X” to produce a localized region of extreme magnetic pressure at the cross-point. Recently, two alternatives to the traditional WXP have arisen: the hybrid X-pinch (HXP), composed of two conical electrodes bridged by a thin wire or capillary, and the laser-cut foil X-pinch (LCXP), cut from a thin foil using a laser. We present a comparison of copper wire, hybrid, and laser-cut foil X-pinches on a single experimental platform: UC San Diego’s ~200 kA, 150 ns rise time GenASIS driver. All configurations produced 1–2 ns pulse width, ≤5 μm soft x-ray (Cu L-shell, ~1 keV) sources (resolutions diagnostically limited) with comparable fluxes. WXP results varied with linear mass and wire count, but consistently showed separate pinch and electron-beam-driven sources. LCXPs produced the brightest (~1 MW), smallest (≤5 μm) Cu K-shell sources, and spectroscopic data showed both H-like Cu K α lines indicative of source temperatures ≥2 keV, and cold K α (~8050 eV) characteristic of electron beam generated sources, which were not separately resolved on other diagnostics (within 1–2 ns and ≤200 μm). HXPs produced minimal K-shell emission and reliably single, bright, and small L-shell sources after modifications to shape the early current pulse through them. Benefits and drawbacks for each configuration are discussed to provide potential X-pinch users with the information required to choose the configuration best suited to their needs.

42 ENGINEERING↗
DOE OSTI2023

Imaging suprathermal x-rays from a laboratory plasma jet using PIN-diode-based and scintillator-based 1D pinhole/coded aperture cameras

A PIN-diode-based 1D x-ray camera and a scintillator-based 1D x-ray camera, both with a microsecond to submicrosecond time resolution, have been developed to perform time-resolved imaging of transient, low-intensity, suprathermal x-rays associated with magnetohydrodynamic instabilities disrupting a plasma jet. These cameras have a high detection efficiency over a broad x-ray band, a wide field of view, and the capability to produce >50 time-resolved frames with a ≤1 μs time resolution. The x-ray images are formed by a pinhole or by a coded aperture placed outside a vacuum chamber in which the plasma jet is launched. The 1D imaging shows that the location of the x-ray source is either a few centimeters away from an inner disk electrode or near a spatially translatable metal frame that is 30–40 cm away from the electrode. Compared to a pinhole, a coded aperture increases the signal collection efficiency but also introduces unwanted artifacts.

Instruments & Instrumentation↗
NASA NTRS1971

TRAPATT oscillations in a p-i-n avalanche diode

P-i-n avalanche diode trapped plasma avalanche triggered transit /TRAPATT/ oscillations characteristics and voltage waveform under square wave driving current, using computer program

Parker, D.↗
DOE OSTI2022

β -Ga 2 O 3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination Available

In this work, we demonstrate a deep mesa etch design for efficient edge field termination in β-Ga 2 O 3 Schottky barrier diodes (SBDs). The proposed design enabled parallel plate fields higher than 4.1 MV/cm with negligible change to the device ON characteristics. The effect of BCl 3 /Cl 2 -based dry etch on (100) and (010) etched vertical sidewalls is also analyzed. A remarkable anisotropy in depletion was observed for etch along (100) and (010) sidewalls. In conclusion, this work provides insight into the impact of etching on n-type Ga 2 O 3 and shows a promising method to realize efficient field termination for high breakdown field strength SBDs.

42 ENGINEERING↗
NASA NTRS1981

On a theory of temporal fluctuations in the electrostatic potential structures associated with auroral arcs

A possible mechanism is presented for the generation of large-amplitude temporal fluctuations in the structure of the electron energization region associated with auroral arcs. The mechanism is based on the observation that the auroral arc system resembles a laboratory circuit consisting of the series connection of battery, resistance and a forward biased diode containing collisionless plasma in which large-amplitude relaxation oscillations are sometimes observed to be superimposed on the steady-state current. It is shown that in both the laboratory and auroral systems, in which a localized auroral arc dynamo, the ionosphere and the electron energization region are involved, the oscillations are controlled by the times for ions and electrons to traverse the acceleration region, which also characterize the low- and high-frequency structure of the fluctuating waveform. It is demonstrated that a plausible one-dimensional double-layer model of the auroral arc acceleration region exhibits the dynamic negative resistance necessary for the generation of oscillations by the present mechanism. Finally, consideration is given to two kinds of auroral phenomena which might be associated with the mechanism: the 10-Hz quasi-periodic flickering aurora and 10-Hz modulations in the intensity of electrostatic hydrogen cyclotron waves.

Silevitch, M. B.↗
NASA NTRS2014

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

Toftul, Alexandra↗
DOE OSTI2022

Studying of multi-shell gas-puff Z-pinches using x-ray spectroscopy with spatial resolution

Dynamics and parameters of gas-puff Z-pinch plasmas at stagnation were studied using x-ray spectroscopic diagnostics. In experiments on a 1 MA pulsed power generator, multilayer coaxial loads were made using a triple-nozzle gas-puff valve. High-luminosity spectrographs with spherically bent crystals made it possible to record spectra with high spatial resolution along the pinch axis and to record two-dimensional plasma images in separate spectral lines. Using various combinations of gases in the nozzles and adding small amounts of a gas tracer, the final structure and composition of the compressed plasma were determined. Furthermore, plasma parameters were estimated by modeling the spectra using the PrismSPECT program, but with the limitation that the spectra were time-integrated, so that spectra from different gases and at different positions may have been emitted at different times.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1974

High-efficiency, low-temperature cesium diodes with lanthanum-hexaboride electrodes

Lanthanum hexaboride electrodes in 1700 K cesium diodes may triple power outputs compared with those demonstrated for nuclear thermionic space applications. Still greater relative gains seem possible for emitters below 1700 K. Further improvements in cesium diode performance should result from the lower collector temperatures allowed for earth and low power space duties. Decreased temperatures will lessen thermal transport losses that attend thermionic conversion mechanisms. Such advantages will add to those from collector Carnot and electrode effects. If plasma ignition difficulties impede diode temperature reductions, recycling small fractions of the output power could provide ionization. So high efficiency, low temperature cesium diodes with lanthanum hexaboride electrodes appear feasible.

Morris, J. F.↗