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NASA NTRS1991

Photoluminescence lifetime measurements in InP wafers

A simple apparatus to measure the minority carrier lifetime in InP has been developed. The technique stimulates the sample with a short pulse of light from a diode laser and measures the photoluminescence decay to extract the minority carrier lifetime. The photoluminescence lifetime in InP as a function of doping on both n- and p-type material is examined. The results also show a marked difference in the lifetime of n-type InP and p-type InP of similar doping levels. N-type InP shows a lifetime considerably longer than the expected radiative limited lifetime.

Landis, Geoffrey A.↗

NASA NTRS1993

Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single-source precursor

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster /(t-Bu)GaS/4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Macinnes, Andrew N.↗

NASA NTRS1993

Photoluminescence intensity enhancement of GaAs by vapor-deposited GaS - A rational approach to surface passivation

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster (/t-Bu/GaS)4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally-characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Jenkins, Phillip P.↗

NASA NTRS1998

Raman and Photoluminescence Spectroscopy of Nano-crystalline PbTiO3 Sensor Materials with Different Doping Ions

Raman spectra & photoluminescence studies in PbTiO3, have been carried out, as a function of particle size, temperature, pressure and dopants. There appears respectively a distinct temperature-induced soft mode phase transition in each sample whose Curie temperature can be determined from the mean-field theory. The detailed Curie temperature shift in the modified PbTiO3 ceramics by Ba, Sr, La and Zr, has been investigated as a function of particle size. Pressure-induced phase transitions display an obvious diffuse behavior. Room temperature photoluminescence for nanocrystalline Ba(1-x)Pb(x)TiO3 have been observed. These studies favor preparations of high efficiency PbTiO3 sensors.

Katiyar, R. S.↗

NASA NTRS2003

Synthesis and Photoluminescent Properties of Arylethynyl substituted 9,10-Anthraquinones

A series of arylethynyl substituted anthraquinones were synthesized via Sonogashira coupling reactions of 2,7- dibromo-, 2,6-dibromo- and 2-bromoanthraquinone with para-substituted phenylacetylenes. While the redox properties of those compounds are almost insensitive to substitution, their absorption maxima are linearly related to the Hammett constants for electron donating and electron withdrawing groups separately. All compounds are photoluminescent both in solution (quantum yield of emission approximately 2%) and as solids. X-ray crystallographic characterization of 2,7-bisphenylethynyl anthraquinone indicates a monoclinic p2(l/n) space group and no indication for pi-overlap that would promote self-quenching. The emission maxima are red- shifted by both electron donating and electron withdrawing groups alike. The Stokes shifts of all compounds are significant and are correlated to the electronic properties of the substituents. The reduced forms of these compounds are also photoluminescent and the emission originates from the dihydroanthraquinone core.

Yang, Jin-Hua↗

DOE OSTI2024

Photoluminescence Excitation Spectroscopy of Monolithic Perovskite/Silicon Tandem Solar Cells

The contributions of each subcell to the total photoluminescence (PL) spectrum of a monolithic perovskite/silicon tandem solar cell are distinguished using a variable wavelength excitation laser source. Here, in the results, a strong overlap of the PL spectrum is shown, originating from the sub‐bandgap region of the perovskite top cell with the emission from the silicon bottom cell, even with near‐infrared excitation wavelengths. Consequently, an excitation laser wavelength of at least 815 nm is required for a dominant PL signal from the silicon bottom cell, and a wavelength no longer than 750 nm is needed for a dominant PL signal from the perovskite top cell in the investigated tandem solar cell. Moreover, a shoulder in the sub‐bandgap emission of the perovskite top cell almost coincides with the PL response region of the silicon bottom cell, which can cause signal confusion in subcell characterization.

14 SOLAR ENERGY↗

DOE OSTI2026

Backbone Stiffness‐Dependent Photoluminescence of Pendant Fluorophores in Organic Nanoparticles

Fluorescent organic nanoparticles (FoNPs) with backbone stiffness‐dependent photoluminescence were synthesized via microemulsion atom transfer radical polymerization (ATRP) of 2‐(2‐bromoisobutyryloxy)ethyl methacrylate (BiBEM), ethylene glycol dimethacrylate (EGDMA), and methacrylate monomers bearing pendant fluorophores, 1‐pyrenemethyl methacrylate (PyMMA), or 4‐(1,2,2‐triphenylethenyl)benzenemethyl methacrylate (TPEMMA). The crosslinking density precisely tuned the intraparticle rigidity, enabling systematic control over emission mechanisms. Pyrene‐containing FoNPs exhibited a rigidity‐dependent transition from excimer‐dominated to monomer‐dominated fluorescence, whereas TPE‐based FoNPs displayed aggregation‐induced emission (AIE) enhancement as intramolecular motion was restricted. Solvent‐dependent studies revealed that increased polarity and viscosity, particularly in benzyl alcohol and DMSO, promoted cooperative rigidification and enhanced emission intensity through specific polymer–solvent interactions. Furthermore, the retained alkyl bromide chain ends on FoNPs enabled dual roles as initiators and crosslinkers in UV‐induced polymerization of poly(ethylene glycol) acrylates, forming luminescent FoNP–OEG hybrid gels with improved mechanical robustness. This work establishes a versatile platform for integrating tunable optical and mechanical properties into a single polymeric nanoparticle framework, offering new design principles for multifunctional soft materials and providing a platform for future sensing, imaging, and photonic applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Emergent Above-Gap Photoluminescence in Molecularly Engineered Hybrid Bilayer Crystals

Bilayer crystals, built by stacking two-dimensional (2D) covalent monolayers, give rise to coupled excitonic states whose properties are constrained by fixed lattice symmetry and orientation. Replacing one covalent monolayer with a 2D molecular crystal––held together by non-covalent forces––overcomes this limitation, as molecular functional groups afford tunable in-plane lattice geometry, intermolecular spacing, and interlayer coupling, providing a powerful knob for exciton engineering. Here, in this study, we report four-atom-thick hybrid bilayer crystals (HBCs) synthesized by directly growing single-crystalline PDI molecular crystal atop WS 2 monolayers, which exhibit a robust photoluminescence (PL) peak 120 meV above the WS 2 optical band gap alongside a belowgap emission. Both peaks display strong polarization anisotropy—nearing unity for the above-gap emission—and maintain a perfectly linear power-law dependence up to an excitation density of ~10 7 mW/cm 2 , indicative of coexisting localized and delocalized excitonic states. Substituting PDI with a PTCDA monolayer on WS 2 fully quenches PL, demonstrating molecular control over excitonic emission. Lattice scale ab initio GW and GW-BSE calculations reveal a significantly hybridized bilayer band structure in PDI/WS 2 that supports interlayer excitonic species both above and below the WS 2 gap with strong polarization anisotropy, in excellent agreement with experiment. Our work introduces a molecule-based bilayer platform for the bottom-up design and control of excitonic phenomena in atomically thin optoelectronic and quantum materials.

2D materials↗

DOE OSTI2025

Dual Photoluminescence in Low-Temperature Phase of CsSnI 3 Nanocrystals

The expression of metal lone-pair electrons is hypothesized to underpin many of the interesting properties of inorganic halide perovskite semiconductors. Recently, a stable low-temperature monoclinic polar phase was predicted for CsSnBr 3 and CsSnI 3 , opening the possibility of direct investigation of a ferroelectric distorted structure compared to the undistorted structure. To date, there have been no experimental reports of such a structure in CsSnI 3 , and the low-temperature optical properties of CsSnI 3 nanocrystals have remained unexplored. Here we report optical and structural evidence of a phase transition around 240 K in 8.9 nm CsSnI 3 nanocrystals. Several changes in optical behavior occur below this transition point, including high-energy photoluminescence (PL) that emits concurrently with the exciton PL. The emergence of this high-energy PL is correlated with X-ray diffraction (XRD) and differential scanning calorimetry (DSC) supporting a phase transition from the orthorhombic structure between 240-200 K. Transient absorption measurements show an increase in the excited state lifetimes, i.e., slowed carrier cooling, at 200 K when photoexciting with photon energies above the high-energy state, consistent with slowed carrier cooling and emergence of high-energy PL. We hypothesize that the slowed carrier cooling is distinctive to this phase transition that modifies both the electronic and phonon structures that dictate excited-state carrier dynamics, and we discuss these changes.

14 SOLAR ENERGY↗

DOE OSTI2024

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects.

Electroluminescence↗

DOE OSTI2025

Robust quantification of the diamond nitrogen-vacancy center charge state via photoluminescence spectroscopy

Nitrogen vacancy (NV) centers in diamond are at the heart of many emerging quantum technologies, all of which require control over the NV charge state. Hence, methods for quantification of the relative photoluminescence intensities of the NV 0 and NV − charge states, i.e., a charge state ratio, are vital. Several approaches to quantify NV charge state ratios have been reported but are either limited to bulk-like NV diamond samples or yield qualitative results. We propose an NV charge state quantification protocol based on the determination of sample- and experimental setup-specific NV 0 and NV − reference spectra. The approach employs blue (400–470 nm) and green (480–570 nm) excitation to infer pure NV 0 and NV − spectra, which are then used to quantify NV charge state ratios in subsequent experiments via least squares fitting. We test our dual excitation protocol (DEP) for a bulk diamond NV sample and 20 and 100 nm nanodiamond particles and compare results with those obtained via other commonly used techniques such as zero-phonon line fitting and non-negative matrix factorization. We find that DEP can be employed across different samples and experimental setups and yields consistent and quantitative results for NV charge state ratios that are in agreement with our understanding of NV photophysics. By providing robust NV charge state quantification across sample types and measurement platforms, DEP will support the development of NV-based quantum technologies.

Color center laser spectroscopy↗

DOE OSTI2025

Keldysh tuning of photoluminescence in a lead halide perovskite crystal

In 1964, Keldysh laid the groundwork for strong-field physics in atomic, molecular, and solid-state systems by delineating a ubiquitous transition from multiphoton absorption to quantum electron tunneling under intense AC driving forces. While both processes in semiconductors can generate carriers and result in photon emission through electron-hole recombination, the low quantum yields in most materials have hindered direct observation of the Keldysh crossover. Leveraging the large quantum yields of photoluminescence in lead halide perovskites, we show that we can not only induce bright light emission from extreme sub-bandgap light excitation but also distinguish between photon-induced and electric-field-induced processes. Our results are rationalized by the Landau-Dykhne formalism, providing insights into the non-equilibrium dynamics of strong-field light-matter interactions. These findings open new avenues for light upconversion and sub-bandgap photon detection, highlighting the potential of lead halide perovskites in advanced optoelectronic applications.

FOS: Physical sciences↗

DOE OSTI2025

All-optical photoluminescence response of nitrogen-vacancy ensembles in diamond at low magnetic fields

All-optical (AO) microwave-free magnetometry using nitrogen-vacancy (N-𝑉) centers in diamond is attractive due to its broad applicability and reduced experimental complexity. In this work, we investigate room-temperature AO photoluminescence (PL) at low magnetic fields ( <2 mT) using diamonds with N-𝑉 ensembles at parts-per-million (ppm) concentrations. The measured AO-PL contrast features as a function of the applied magnetic field magnitude and direction are correlated with near-degenerate N-𝑉 electronic spin and hyperfine transitions from different N-𝑉 orientations within the diamond host. Reasonable agreement is found between low-field AO-PL measurements and model-based simulations of the effects of resonant dipolar interactions between N-𝑉 centers. The maximum observed AO-PL contrast depends on both the N-𝑉 concentration and the laser-illumination intensity at 532 nm. These results imply different optimal conditions for low-field AO N-𝑉 sensing compared to conventional optically detected magnetic resonance (ODMR) techniques, suggesting new research and application opportunities using AO measurements with lower system complexity, size, weight, and power.

Dipolar interaction↗

DOE OSTI2024

Inter-Oligomer Interaction Influence on Photoluminescence in Cis-Polyacetylene Semiconductor Materials

Semiconducting conjugated polymers (CPs) are pivotal in advancing organic electronics, offering tunable properties for solar cells and field-effect transistors. Here, we carry out first-principle calculations to study individual cis-polyacetylene (cis-PA) oligomers and their ensembles. The ground electronic structures are obtained using density functional theory (DFT), and excited state dynamics are explored by computing nonadiabatic couplings (NACs) between electronic and nuclear degrees of freedom. We compute the nonradiative relaxation of charge carriers and photoluminescence (PL) using the Redfield theory. Our findings show that electrons relax faster than holes. The ensemble of oligomers shows faster relaxation compared to the single oligomer. The calculated PL spectra show features from both interband and intraband transitions. The ensemble shows broader line widths, redshift of transition energies, and lower intensities compared to the single oligomer. This comparative study suggests that the dispersion forces and orbital hybridizations between chains are the leading contributors to the variation in PL. It provides insights into the fundamental behaviors of CPs and the molecular-level understanding for the design of more efficient optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS2011

Photoluminescence Study of Long Wavelength Superlattice Infrared Detectors

In this paper, the relation between the photoluminescence (PL) intensity and the PL peak wavelength was studied. A linear decrease of the PL intensity with increasing cut-off wavelength of long wavelength infrared CBIRDs was observed at 77 K and the trend remained unchanged in the temperature range 10 - 77 K. This relation between the PL intensity and the peak wavelength can be favorably used for comparison of the optical quality of samples with different PL peak wavelengths. A strong increase of the width of the PL spectrum in the studied temperature interval was observed, which was attributed to thermal broadening.

superlattice↗

DOE OSTI2024

Photoluminescence Probes Ion Insertion into Amorphous and Crystalline Regions of Organic Mixed Conductors

Abstract Organic mixed ionic‐electronic conductors (OMIECs) have emerged as promising materials for a wide range of next‐generation technologies, including bioelectronics and neuromorphic computing. The performance of these materials depends on the transport of ions through the polycrystalline polymer matrix as well as how the distribution of ions and polarons in crystalline and amorphous regions impacts electronic transport. However, it is often challenging to distinguish whether ions enter crystalline or amorphous regions. In this work, steady‐state and time‐resolved photoluminescence (PL) spectroelectrochemistry is used to probe initial ion insertion in crystalline and amorphous regions of the OMIEC material poly(3‐[2‐[2‐(2‐methoxyethoxy)ethoxy]ethyl]thiophene ‐2,5‐diyl) (P3MEEET) as a function of applied voltage. It is found that PL spectroelectrochemistry reports on the initial stages of electrochemical doping through the quenching of PL emission. By distinguishing between amorphous and crystalline contributions to the PL spectrum, ion insertion in crystalline and amorphous regions as a function of voltage is tracked. It is found that PL spectroelectrochemistry is much more sensitive to the initial injection of ions than complementary methods, highlighting its potential as a sensitive tool for interrogating ion injection in OMIECs.

Collins, Garrett W.↗

DOE OSTI2025

Contracted, Not Converted: Photoluminescence Thermochromism in Ultrabright Pure Blue Emissive Hybrid Copper(I) Halide

Thermochromic luminescent materials are promising for applications such as sensors or display technologies. Understanding the mechanism of thermochromic luminescence in these materials plays an important role for their targeted applications. Here, a 0D copper(I) halide (TMP)2CuBr3 and 1D (TMP)Ag2Br3 (TMP = tetramethylphosphonium) are reported. While (TMP)Ag2Br3 is a weak light emitter, (TMP)2CuBr3 demonstrates ultrabright pure blue emission with photoluminescence (PL) quantum yield exceeding 90% within the temperature range 300–80 K. The emission in (TMP)2CuBr3 is attributed to the radiative recombination of self-trapped excitons (STEs) that arise localized on [CuBr3]2− anions. (TMP)2CuBr3 demonstrates excitation-selective PL thermochromism at low temperatures. In the literature, the origin of multiple STEs is often unclear in luminescent metal halides. Here, a detailed temperature-dependent spectroscopic and structural analysis suggests that the PL thermochromism in (TMP)2CuBr3 is associated with the appearance of a second STE state. The appearance of second STE is expected to have a structural origin, and it may be associated with the observed anomaly in thermal contraction near 200 K. The distinct PL features of melt-processible (TMP)2CuBr3 coupled with its remarkable photo- and thermal stability allow its consideration for practical optical applications, including temperature sensing.

Popy, Dilruba [University of Oklahoma, Norman]↗

DOE OSTI2026

Micro-photoluminescence mapping and Chemometrics for the rapid classification of rare earth materials

This article introduces advancements in chemically mapping rare earth materials using photoluminescence (PL) and chemometrics. By leveraging the high sensitivity and selectivity of PL compared to alternative optical techniques, as well as its compatibility with microscopy, we present enhanced capabilities for noninvasive material screening and characterization. Exemplary PL spectra of samarium(III) and europium(III) in oxide, nitrate, and chloride forms demonstrated the ability to extract detailed chemical information of diverse rare earth particles. Additionally, we introduced efficient PL mapping sequences capable of covering a 9 mm diameter carbon tab within minutes, which highlighted the benefits of rapid, large-area imaging. Furthermore, an integrated approach combining PL mapping with principal component analysis and a random forest classifier enabled the resolution of overlapping spectral peaks from different chemistries and provided accurate material classification. In conclusion, these advancements underscored the versatility and robustness of PL for chemically mapping rare earth materials, with the potential to support applications in mining, energy, environmental monitoring, isotope production and beyond.

Chemometrics↗