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NASA NTRS1999

Chemical Bonding in TI Cuprates Studied by X-ray Photoemission

Epitaxial thin films of the TI cuprate superconductors are studied with x-ray photoemission spectroscopy.

Superconductors photoemission↗

NASA NTRS1999

Chemical Bonding in TI Cuprates Studied by X-ray Photoemission

The variation of E(sub f) with oxygen stoichiometry is detectable in rigid shifts of the photoemission core levels, as previously reported for TI-2201 and TI-1212.

high temperature superconductors photoemission↗

NASA NTRS1994

Long-Wavelength Stacked SiGe/Si Heterojunction Internal Photoemission Infrared Detectors Using Multiple SiGe/Si Layers

Utilizing low temperature silicon molecular beam epitaxy (MBE) growth, long-wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Si layers have been fabricated and demonstrated. Using an elemental boron source, high doping concentrations (approximately equal to 4 x 10(sup 20) cm(sup -3)) has been achieved and high crystalline quality multiple Si(sub 0.7)Ge(sub 0.3)/Si layers have been obtained. The detector structure consists of several periods of degenerately boron doped (approximately equal to 4 x 10(sup 20) cm(sup -3)) thin (less than or equal to 50 u Si(sub 0.7)Ge(sub 0.3) layers and undoped thick (approximately equal to 300u Si layers. The multiple p(sup +) - Si(sub 0.7)Ge(sub 0.3)/undoped-Si layers show strong infrared absorption in the long-wavelength regime mainly through free carrier absorption. The stacked Si(sub 0.7)Ge(sub 0.3)/Si HIP detectors with p = 4 x 10(sup 20) cm(sup -3) exhibit strong photoresponse at wavelengths ranging from 2 to 20 (micro)m with quantum efficiencies of about 4% and 1.5% at 10 and 15 (micro)m wavelengths, respectively. The detectors show near ideal thermionic-emission limited dark current characteristics.

beam epitaxy↗

NASA NTRS1962

FIELD-INDUCED PHOTOEMISSION

Field-induced photoemission

ELECTRIC FIELD↗

NASA NTRS1965

Photoemission from amorphous and metallic selenium in the vacuum ultraviolet.

Photoemission of vacuum evaporated, amorphous and metallic selenium films in spectral range from 2000 to 1100 angstroms

THIN FILM↗

NASA NTRS1966

Photoemission study of the electronic structure of CdTe

Photoemission study of electronic structure of cadmium telluride single crystals

ELECTRONIC STRUCTURE↗

NASA NTRS1966

Photoemission studies of the electronic structure of CdTe, CdSe, and CdS

Electronic structure photoemission studies of cadmium telluride, cadmium selenide, and cadmium sulfide

CADMIUM COMPOUND↗

NASA NTRS1967

Photoemission Study of the Electronic Structure of CdTe

Photoemission study of electronic structure of CdTe, considering two strong reflectivity peaks in optical reflectivity spectrum

ELECTRONIC STRUCTURE↗

NASA NTRS1967

Possible non-one-electron effects in the fundamental optical excitation spectra of certain crystalline solids and their effect on photoemission.

Intrinsic optical excitation spectrum of crystalline solids for hole or electron localization, considering many-body relaxation effects influencing photoemission

OPTICAL SPECTRUM↗

NASA NTRS1967