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NASA NTRS2000

Analysis and Enhancement of Low-Light-Level Performance of Photodiode-Type CMOS Active Pixel Images Operated with Sub-Threshold Reset

Noise in photodiode-type CMOS active pixel sensors (APS) is primarily due to the reset (kTC) noise at the sense node, since it is difficult to implement in-pixel correlated double sampling for a 2-D array. Signal integrated on the photodiode sense node (SENSE) is calculated by measuring difference between the voltage on the column bus (COL) - before and after the reset (RST) is pulsed. Lower than kTC noise can be achieved with photodiode-type pixels by employing "softreset" technique. Soft-reset refers to resetting with both drain and gate of the n-channel reset transistor kept at the same potential, causing the sense node to be reset using sub-threshold MOSFET current. However, lowering of noise is achieved only at the expense higher image lag and low-light-level non-linearity. In this paper, we present an analysis to explain the noise behavior, show evidence of degraded performance under low-light levels, and describe new pixels that eliminate non-linearity and lag without compromising noise.

Pain, Bedabrata↗

NASA NTRS2013

Low-Noise Large-Area Photoreceivers with Low Capacitance Photodiodes

A quad photoreceiver includes a low capacitance quad InGaAs p-i-n photodiode structure formed on an InP (100) substrate. The photodiode includes a substrate providing a buffer layer having a metal contact on its bottom portion serving as a common cathode for receiving a bias voltage, and successive layers deposited on its top portion, the first layer being drift layer, the second being an absorption layer, the third being a cap layer divided into four quarter pie shaped sections spaced apart, with metal contacts being deposited on outermost top portions of each section to provide output terminals, the top portions being active regions for detecting light. Four transimpedance amplifiers have input terminals electrically connected to individual output terminals of each p-i-n photodiode.

Joshi, Abhay M.↗

NASA NTRS2017

Successful Space Flight of High-Speed InGaAs Photodiode Onboard the International Space Station

Photonic systems are required for several space applications, including satellite communication links and lidar sensors. Although such systems are ubiquitous in terrestrial applications, deployment in space requires the constituent components to withstand extreme environmental conditions, including wide operating temperature range, mechanical shock and vibration, and radiation. These conditions are significantly more stringent than alternative standards, namely Bellcore GR-468 and MIL-STD 883, which may be satisfied by typical, commercially available, photonic components. Furthermore, it is very difficult to simultaneously reproduce several aspects of space environment, including exposure to galactic cosmic rays (GCR), in a laboratory. Therefore, it is necessary to operate key photonic components in space to achieve a technology readiness level of 7 and beyond. Accordingly, the International Space Station (ISS) provides an invaluable test bed for qualifying such components for space missions. We present a fiber-pigtailed photodiode module, having a -3 dB bandwidth of 16.8 GHz, that survived 18 months on the ISS as part of the Materials International Space Station Experiment (MISSE) 7 mission. This module was launched by NASA Langley Research Center on November 16, 2009 on the Space Shuttle Atlantis (STS-129), as part of their lidar transceiver components. While orbiting on the ISS in a passive experiment container, the photodiode module was exposed to extreme temperature cycling from -157 degrees Celsius to +121 degrees Celsius 16 times a day, proton radiation from the inner Van Allen belt at the South Atlantic Anomaly, and galactic cosmic rays. The module returned to Earth on the Space Shuttle Endeavor (STS-134) on June 1, 2011 for further characterization. The post flight test of the photodiode module, shown in Fig. 1a, demonstrates no change in the module's performance, thus proving its survivability during launch and in space environment.

Joshi, Abhay↗

NASA NTRS2018

Low Excess Noise, High Gain Avalanche Photodiodes

A system, method, and apparatus for an avalanche photodiode with an enhanced multiplier layer are disclosed herein. In particular, the present disclosure teaches an avalanche photodiode having a multiplier with alternating layers of one or more quantum wells and one or more spacers. A method of making the avalanche photodiode includes growing the multiplier on a substrate.

Bai, Xiaogang↗

NASA NTRSDate not supplied

Linear Array Photodiode and Data Acquisition System Development for Multi-Point Line FLDI Measurements

The continuous development and advancement of multi-point line focused laser differential interferometry (FLDI) instruments requires larger numbers of acquisition channels to make more finely spatially resolved measurements of high-frequency flow fluctuations. No current off-the-shelf system exists for these line FLDI measurements, and so a single unified system consisting of a linear array photodiode, required electronics, and a data acquisition system has been developed to enhance the measurement resolution, both spatially and temporally. A printed circuit board was developed on which the linear array photodiode is mounted for inclusion into an existing FLDI system, and amplifier breakout boards incorporate electronics to condition the signal for the data acquisition system while retaining the necessary high frequency response. The data acquisition system uses a National Instruments chassis and multiple oscilloscope modules, with a specially-designed LabVIEW user interface for laboratory and wind tunnel setup, calibration, and testing. Details regarding the development of the linear array photodiode system and the data acquisition system are provided, and systematic testing of all components is presented, culminating in a test of the system integrated into an existing line FLDI system for measurements of a turbulent jet.

Joshua M Weisberger↗

DOE OSTI2026

Effect of Illumination Area on the Ultrafast Temporal Response of MSM GaN Photodiodes

We investigate the influence of spatial illumination profiles on the temporal response of metal–semiconductor–metal GaN photodiodes. Using both simulation and experimental measurements, we compare the response curves under two scenarios: illumination confined to the active area between electrodes and extended illumination beyond the contacts. The results show that limiting the beam illumination to the active region significantly sharpens the response, reducing the long decay tails associated with slow carrier drift from peripheral regions. As a result, the experimental data closely match simulation predictions, confirming that illumination geometry plays a critical role in optimizing photodiode performance for ultrafast detection applications.

Carrier drift time↗

NASA NTRS1998

Optimum Receiver Structure for PPM Signals with Avalanche Photodiode Statistics

The maximum likelihood decision statistic for detection of pulse-position modulated signals with an avalanche photodiode is derived, using the more accurate Webb density rather than Poisson or Gaussian approximations for the distribution of avalanche photodiode output electrons. It is shown that for Webb-distributed output electtrons, the maximum likelihood rule is to choose the PPM word corresponding to the slot with the maximum electron count.

avalanche photodiode PPM Gaussian Poisson↗

NASA NTRS1972

Temperature compensation of light emitting diodes and photodiodes.

Improved temperature compensation of the output from a GaAs LED can be obtained by connecting the diode in series with the emitter of an n-p-n transistor whose base circuit incorporates a high-gain operational amplifier and a parallel thermistor-resistor network. The temperature dependence of several photodiodes is also reported along with a practical temperature compensation scheme. Finally, the temperature compensation of a photon coupled pair consisting of a GaAs LED and a silicon photodiode is described. The combination provides a stability, linearity, and repeatability of about 1% over the upper 60% of the LED forward current range in the temperature interval from 15 to 45 C.

Burrous, C. N.↗

NASA NTRS1972

High speed, high performance /Hg,Cd/Te photodiode detectors.

The current performance of high speed photodiode detectors for the 1 to 10 micron spectral region is discussed. The (Hg,Cd)Te photodiode configuration, detector properties, integration in laser receiver modules, and frequency response are considered for near infrared and far infrared wavelengths. The recent advances in (Hg,Cd)Te material and device development are indicated by the realization not only of exceptionally high speed detectors but of detectors that exhibit excellent detectivities. The performance improves substantially when the detector is cooled. This detector junction technology has been extended to other compositions of (Hg,Cd)Te for peak spectral responses at 5 and 10 micron.

Soderman, D. A.↗

NASA NTRS1975

Low-noise extended-frequency response with cooled silicon photodiodes

It is shown that a substantial reduction in internal noise generated by the photodiode and the preamplifier can be produced by a modest cooling of the components and by optimization of preamplifier design. With this reduction the silicon detectors can, in the SNR range of 5 or greater, produce better performance than photon-noise-limited photomultipliers. The circuit noise and frequency response model suggested by Goranson and Skipper (1974) is expanded to include the effects of frequency dependent FET voltage noise and FET load resistance noise. The modeling of the photodiode and preamplifier is described and the noise characteristics of a 0.01 Hz to 100 kHz bandwidth detector/amplifier channel are evaluated.

Neiswander, R. S.↗

NASA NTRS1979

III-V alloy heterostructure high speed avalanche photodiodes

Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 micron. Early stages of development show very encouraging results. High speed response of less than 35 ps and high quantum efficiency more than 95 percent have been obtained. The dark currents and the excess avalanche noise are also dicussed. A direct comparison of GaAlSb, GaAlAsSb, and In GaAsP avalanche photodiodes is given.

Law, H. D.↗

NASA NTRS1982

A photon-counting photodiode array detector for far ultraviolet (FUV) astronomy

A compact, stable, single-stage intensified photodiode array detector designed for photon-counting, far ultraviolet astronomy applications employs a saturable, 'C'-type MCP (Galileo S. MCP 25-25) to produce high gain pulses with a narrowly peaked pulse height distribution. The P-20 output phosphor exhibits a very short decay time, due to the high current density of the electron pulses. This intensifier is being coupled to a self-scanning linear photodiode array which has a fiber optic input window which allows direct, rigid mechanical coupling with minimal light loss. The array was scanned at a 250 KHz pixel rate. The detector exhibits more than adequate signal-to-noise ratio for pulse counting and event location.

Hartig, G. F.↗

NASA NTRS1982

Photon counting photodiode array detector for far ultraviolet (FUV) astronomy

Hartig, G. F.↗

NASA NTRS1985

Application of a silicon photodiode array for solar edge tracking in the Halogen Occultation Experiment

The optical and electronic design of the Halogen Occultation Experiment (HALOE) elevation sunsensor is described. This system uses a Galilean telescope to form a solar image on a linear silicon photodiode array. The array is a self-scanned, monolithic charge coupled device. The addresses of both solar edges imaged on the array are used by the control/pointing system to scan the HALOE science instantaneous-field-of-view (IFOV) across the vertical solar diameter during instrument calibration, and then maintain the science IFOV four arcmin below the top edge during the science data occultation event. Vertical resolution of 16 arcsec and a radiometric dynamic range of 100 are achieved at the 0.7 micrometer operating wavelength. The design provides for loss of individual photodiode elements without loss of angular tracking capability. The HALOE instrument is a gas correlation radiometer that is now being developed by NASA Langley Research Center for the Upper Atmospheric Research Satellite.

Mauldin, L. E., III↗

NASA NTRS1986

A cooled avalanche photodiode with high photon detection probability

An avalanche photodiode has been operated as a photon-counting detector with 2 to 3 times the sensitivity of currently-available photomultiplier tubes. APD (avalanche photodiodes) detection probabilities that exceed 27% and approach 50% have been measured at an optimum operating temperature which minimizes noise. The sources of noise and their dependence on operating temperature and bias voltage are discussed.

Robinson, D. L.↗

NASA NTRS1989

Photodiode-Coupled Light Modulator

Absorption of one light beam controls transmission of another. High-performance monolithic light modulator comprised of p-doped/intrinsic/n-doped (PIN) GaAs photodiode grown directly over InAs/GaAs PIN multiple-quantum-well (MQW) diode. Photodiode-coupled multiple-quantum-well modulator includes advanced semi-conductor microstructures enhancing electro-optical properties. Using standard lithographic and etching techniques for defining picture elements, structures fabricated into two-dimensional arrays for use as spatial light modulators.

Maserjian, Joseph↗

NASA NTRS1988

Responsivity of silicon photodiodes from 0.5 to 1.1 micron at 77 K

The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR Mapping Spectrometer (VIMS). Quantitative responsivity data for Si photodiodes in the band from 0.5 to 1.1 were needed for the VIMS system analysis. The results show that the Si array for the focal plane should have two different antireflection coatings. It is found that the Si and InSb materials have equivalent quantum efficiencies at about 0.9 microns. Because of unknown signal chain complications that could be caused by a multiplexer accessing two different capacitances, the focal plane was designed with a change from Si to InSb at 1 micron.

Staller, C.↗

NASA NTRS1991

GaAsP Photodiodes As X-Ray Detectors

Tests show commercial G1126-02 GaAsP photodiodes designed as ultraviolet detectors modified easily for use as x-ray detectors. Have quartz windows. When used to measure ultraviolet fluxes, windows or other apertures in optical paths covered with optical filters. To modify one of these photodiodes for x-ray application, one removes quartz window and replaces with aluminum foil, which blocks ultraviolet and visible radiation. GaAsP cells cost less than Si cells do and less damaged by radiation.

Laue, Eric G.↗