Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Photocurrent”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

3D‐Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device

Abstract Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide‐bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically‐active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin‐electric field coupling to measure electronic phenomena. In this work, charge‐state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen‐vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on‐demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide‐bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide‐bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies.

Wood, Alexander A.↗
NASA NTRS1973

Calculation of transient photocurrents in insulators with trapped space charge.

The transit times and pulse shapes of photoinjected carriers moving in the presence of trapped space charge are derived. Two distributions are considered: uniformly trapped space charge, and trapped space charge decreasing exponentially in position from the injecting electrode. The pulse shapes are in some cases similar to those arising from transient space-charge-limited currents. The results in the case of the exponentially trapped space charge may have application in analysis of pulses taken in the presence of space charge trapped in the excitation layer or on the surface of insulators.

Hermann, A. M.↗
NASA NTRS1976

Correlation of photocurrent-voltage curves with flat-band potential for stable photoelectrodes for the photoelectrolysis of water

Using the differential capacitance technique, the flat-band potential of n-type TiO2, SnO2, SrTiO3, KTaO3, and KTa(0.77)Nb(0.23)O3 electrodes has been determined as a function of pH in aqueous electrolytes. Plots of flat-band potential vs. pH are linear in all cases and have a slope of approximately 0.059 V/pH unit. The flat-band potential correlates nicely with the onset for photoanodic currents corresponding to O2 evolution at the n-type semiconductor and H2 at the dark Pt cathode. The ordering of flat-band potentials at a given pH is SrTiO3 of the order of KTaO3 of the order of KTa(0.77)Nb(0.23)O3 greater than TiO2 greater than SnO2 (SnO2 most positive vs a saturated calomel electrode).

Bolts, J. M.↗
NASA NTRS1979

A note on photocurrents in extrinsic semiconductors

The advent of the concept of holes and careful determination of mobilities have made it possible to realize that the potential difference between the contacts of an irradiated semiconductor in the absence of current flow is due to the difference in mobility of electrons and holes. In this paper, a preliminary analysis shows that charge neutrality and zero-current condition are compatible. This situation is clarified and it is found that the equation for the electric field E in the absence of current is not absolutely correct even under low-level injection conditions. In particular, it is shown that fairly large currents can be generated by suitable light sources, currents which are entirely due to the disparity between electron and hole mobilities.

Von Roos, O.↗
NASA NTRS1978

The decrease in effective photocurrents due to saddle points in electrostatic potentials near differentially charged spacecraft

The reported investigation had the objective to illustrate the presence of important multidimensional effects in spacecraft charging. Two-dimensional codes have been under development by Parker (1976). A description is presented of a calculation which was performed using the three-dimensional NASA Charging Analyzer Program (NASCAP). NASCAP was run to calculate the electrostatic potentials on the surface of, and in the space surrounding, a sunlit Teflon-coated sphere. Currents to the sunlit surfaces were determined on the basis of an approximate photosheath model for strong differential charging.

Mandell, M. J.↗
NASA NTRS1985

Photocurrent images of amorphous-silicon solar-cell modules

Results obtained in applying the unique characteristics of the solar cell laser scanner to investigate the defects and quality of amorphous silicon cells are presented. It is concluded that solar cell laser scanners can be effectively used to nondestructively test not only active defects but also the cell quality and integrity of electrical contacts.

Kim, Q.↗
NASA NTRS1990

Role of photocurrent in low-temperature photoemission studies of Schottky-barrier formation

Photoelectron spectroscopy is frequently used to study band bending in semiconductors due to charge stored in surface or interface states. This paper examines how such experimental results are modified by photovoltages generated within the band-bending region not only by ambient light sources, but by the incident X-rays themselves. Recent experiments which have suggested dopant-dependent and reversible temperature-dependent band bending in the initial stages of formation of the metal-GaAs(110) interface are used as an example. It is shown that the reported dependence derives from a photovoltaic effect.

Hecht, M. H.↗
NASA NTRS1985

Studies on organic semiconductors. 15: Effects of the substituents on the photoconductivities of substituted anthracenes

The photocurrents of the substituted anthracenes, 1,5-diacetylanthracene (2), 1-acetylanthracene (3), 9-acetylanthracene (4), 1,5-dichloroanthracene (5), 1,5-diethylanthracene (6), 1,5-dimethoxyanthracene (7), 9-cyanoanthracene (8), and anthracene (1) were measured by using their surface type cells in nitrogen. The compounds of (1), (5), (6), (7), and (8) showed the photocurrent spectra which corresponded to the absorption spectra of their evaporated films. In the cases of (2) and (3), however, the anomalous photocurrent appeared in the threshold region of their absorption spectra. The appearance of the anomalous photocurrent was characteristic of anthracenes having the acetyl group at 1- and/or 5-position. The magnitude of the photocurrents of the 1,5-disubstituted anthracenes was similar to that of (1). The photocurrents of the monosubstituted anthracenes were smaller than that of (1). Among the monosubstituted anthracenes, the compound (4) showed no photocurrent under the same conditions. Contrary to the results obtained in the cases of phenazines, the photoconductivities of the anthracene derivatives became better in air.

Sugimoto, A.↗
NASA NTRS1996

Diffusion lengths in irradiated N/P InP-on-Si solar cells

Indium phosphide (InP) solar cells were made on silicon (Si) wafers (InP/Si) by to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. Spire has made N/P InP/Si cells of sizes up to 2 cm by 4 cm with beginning-of-life (BOL) AM0 efficiencies over 13% (one-sun, 28C). These InP/Si cells have higher absolute efficiency and power density after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells after a fluence of about 2e15 1 MeV electrons/sq. cm. In this work, we investigate the minority carrier (electron) base diffusion lengths in the N/P InP/Si cells. A quantum efficiency model was constructed for a 12% BOL AM0 N/P InP/Si cell which agreed well with the absolutely measured quantum efficiency and the sun-simulator measured AM0 photocurrent (30.1 mA/sq. cm). This model was then used to generate a table of AM0 photocurrents for a range of base diffusion lengths. AM0 photocurrents were then measured for irradiations up to 7.7e16 1 MeV electrons/sq. cm (the 12% BOL cell was 8% after the final irradiation). By comparing the measured photocurrents with the predicted photocurrents, base diffusion lengths were assigned at each fluence level. A damage coefficient K of 4e-8 and a starting (unirradiated) base electron diffusion length of 0.8 microns fits the data well. The quantum efficiency was measured again at the end of the experiment to verify that the photocurrent predicted by the model (25.5 mA/sq. cm) agreed with the simulator-measured photocurrent after irradiation (25.7 mA/sq. cm).

Wojtczuk, Steven↗
DOE OSTI2021

Nonlinear nanoelectrodynamics of a Weyl metal

Chiral Weyl fermions with linear energy-momentum dispersion in the bulk accompanied by Fermi-arc states on the surfaces prompt a host of enticing optical effects. While new Weyl semimetal materials keep emerging, the available optical probes are limited. In particular, isolating bulk and surface electrodynamics in Weyl conductors remains a challenge. We devised an approach to the problem based on near-field photocurrent imaging at the nanoscale and applied this technique to a prototypical Weyl semimetal TaIrTe 4 . As a first step, we visualized nano-photocurrent patterns in real space and demonstrated their connection to bulk nonlinear conductivity tensors through extensive modeling augmented with density functional theory calculations. Notably, our nanoscale probe gives access to not only the in-plane but also the out-of-plane electric fields so that it is feasible to interrogate all allowed nonlinear tensors including those that remained dormant in conventional far-field optics. Surface- and bulk-related nonlinear contributions are distinguished through their “symmetry fingerprints” in the photocurrent maps. Robust photocurrents also appear at mirror-symmetry breaking edges of TaIrTe 4 single crystals that we assign to nonlinear conductivity tensors forbidden in the bulk. Here, nano-photocurrent spectroscopy at the boundary reveals a strong resonance structure absent in the interior of the sample, providing evidence for elusive surface states.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1985

Preparations of methoxynitrophenazines and their photoconductivities

Eight methoxynitrophenazines with a methoxy group at the 1 or 2 position and a nitro group at the 6-, 7-, 8- or 9-position of the phenazine ring 1,6, 1,7. 1,8, 1,9, 2,6, 2,7, 2,8 and 2,9 were prepared and their photocurrents were measured by illuminating the surface-type cell with white light from a W lamp under a N atmosphere at room temp. The photocurrents of 1-nitrophenazine 6 and 2-nitrophenazine 7 are compared with those of the methoxynitrophenazines. The photocurrent (i sub p) increases with increasing light intensity (I), thus satisfying log i varies as n log I. The n values are 0.5-1.0. When the nitro group is located at the beta-position of the phenazine ring, the photocurrent becomes larger owing to the electron withdrawing property of the nitro group. On the other hand, the photocurrents of phenazines with the nitro group at the Alpha-position are extremely small. The photoconductivities of methoxynitrophenazines are lower in air.

Sugimoto, A.↗
DOE OSTI2025

Unequal {110} Facets: The Potential Role of Intraparticle Heterogeneity and Facet Termination in Photoelectrochemical Activity of Single BiVO 4 Particles

BiVO 4 photoanodes are promising for solar water splitting, with photogenerated electrons and holes preferentially reacting at top {010} and lateral {110} facets, respectively. However, the mechanisms driving this facet-dependent reactivity remain unclear. Here, in this study, we investigate facet-dependent photocurrent and material heterogeneity using correlative scanning photoelectrochemical microscopy (SPCM), electron beam induced current (EBIC) mapping, and mid-IR scattering scanning near-field optical microscopy (s-SNOM). SPCM measurements of 62 BiVO 4 particles confirmed higher photocurrents at lateral {110} facets compared to top {010} facets, but unexpectedly revealed variations in photocurrent among lateral facets within the same particle. Variations in lateral facet surface termination could explain the intraparticle-level reactivity heterogeneity, consistent with theoretical predictions. Nano-FTIR spectroscopy and Raman microspectroscopy indicated significant materials chemistry heterogeneity within individual particles and facets that could be attributed to variations in lattice vibration distortions that enhance the overlap between Bi 6s and O 2p orbitals. The increased orbital overlap is significant as it potentially increases hole mobility in the valence band and potentially explains the lateral facet-dependent charge separation efficiency observed in photocurrent maps. Facet-dependent electrical and EBIC measurements showed no space charge regions at interfacet junctions or metal-BiVO 4 contacts under vacuum, suggesting that photogenerated holes beneath top {010} facets are unlikely to transport to lateral {110} facets to drive water/sulfite oxidation. These findings indicate the potential influence of distinct bulk properties and surface termination chemistries across different particles and facets, highlighting the importance of carefully controlling defects and surface chemistry during sample growth to optimize photocatalytic performance.

BiVO4↗
NASA NTRS1984

Substituent effects on the electrical conductivities of the phenazine derivatives

The and/or photoconductivities of 16 substituted phenazines having methoxy, hydroxy, chloro, nitro, amino or t-butyl group at 1-, 2-, 1, 6- or 2,7- positions of the phenazine ring measured by using the surface type cells. The energy gaps of the dark conductivities in the range 2.0 to 2.3 were independent of the kinds and the positions of the substituent groups, although the photo-absorption wavelength of the evaporated films changed with them. No correlation between photoconductivity and fluorescence was observed. The photocurrent was affected by the position of the substituents; namely, the photocurrents of the 1,6-di-substituted phenazines. When the substituent at 1,6-positions was hydroxy or amino group, however, the photocurrents decreased. The photocurrents decreased drastically in the presence of oxygen.

Sugimoto, A.↗
DOE OSTI2025

Efficient BiVO 4 /CoFeO x H y photoanodes using controlled annealing and conformal linear-sweep electrocatalyst photodeposition

Although monoclinic bismuth vanadate (BiVO 4 ) is a promising photoanode for solar water splitting, its practical use is hindered by imperfect photocurrent generation/collection, low photovoltage compared to the bandgap, and corrosion side reactions that limit durability. Here, we introduce a controlled-annealing sol–gel process for BiVO 4 thin-film photoanodes along with an optimized linear-sweep-voltammetry photodeposition of CoFeO x H y cocatalysts. The resulting BiVO 4 films annealed at 550 °C exhibited a photocurrent density of 4.1 mA/cm 2 at 1.23 V RHE under 1 sun AM 1.5G solar simulation and a low onset potential of 0.26 V RHE due to high majority carrier conductivity, a crystalline bulk with reduced defects as evidenced by x-ray photoelectron spectroscopy and photoluminescence lifetime analysis, and thus enhanced photocarrier collection. However, significant degradation in performance was found due to interfacial photocorrosion. To protect the surface and speed the oxygen-evolution reaction CoFeO x H y cocatalyst layers were deposited. By varying the number of consecutive sweeps and adjusting the applied bias range, an ultra-thin (~15 nm) CoFeO x H y cocatalyst layer was uniformly grown deposited over 30 cycles on the BiVO 4 surface. The resulting BiVO 4 /CoFeO x H y yielded 4.03 mA/cm 2 at 1.23 V RHE and onset potential of 0.24 V RHE , with stable operation (~15 % loss in photocurrent at 1.23 V RHE relative to ~60 % loss in the uncatalyzed control sample). These conformal CoFeO x H y catalytic layers function simultaneously to selectively collect photoexcited holes from the BiVO 4 , catalyze the water-oxidation reaction, and protect the BiVO 4 from photodegradation.

42 ENGINEERING↗