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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Comparative Study of Nonlinear Black-Box Modeling for Power Electronics Converters

With the increasing penetration level of renewable sources and power electronics loads in modern power systems, accurate and computationally efficient models are needed. Black-box model (BBM) could be a useful method in such systems. However, not very extensive research efforts have been made for power electronics BBM so far, and existing works mostly focus on steady-state operation, neglecting the important transient behaviors such as load transients, voltage transients, and faults. This paper presents a comparative study of three commonly used nonlinear BBM approaches for transient behaviors of power electronics converters. Comparison methods are proposed, and the evaluations are conducted under different transients using a grid-connected single-phase photovoltaic inverter. The findings of this study provide valuable references for further feasibility investigations on implementing BBMs in large-scale power electronics-rich power systems.

Qiao, Liang↗
DOE OSTI2017

Impact of distributed power electronics on the lifetime and reliability of PV systems: Impact of distributed power electronics

Here, this paper quantifies the impact of distributed power electronics in photovoltaic (PV) systems in terms of end-of-life energy-capture performance and reliability. The analysis is based on simulations of PV installations over system lifetime at various degradation rates. It is shown how module-level or submodule-level power converters can mitigate variations in cell degradation over time, effectively increasing the system lifespan by 5-10 years compared with the nominal 25-year lifetime. An important aspect typically overlooked when characterizing such improvements is the reliability of distributed power electronics, as power converter failures may not only diminish energy yield improvements but also adversely affect the overall system operation. Failure models are developed, and power electronics reliability is taken into account in this work, in order to provide a more comprehensive view of the opportunities and limitations offered by distributed power electronics in PV systems. Lastly, it is shown how a differential power-processing approach achieves the best mismatch mitigation performance and the least susceptibility to converter faults.

14 SOLAR ENERGY↗
DOE OSTI2019

Thermal and Thermomechanical Modeling to Design a Gallium Oxide Power Electronics Package: Preprint

The power electronics industry is currently undergoing a major transition by replacing silicon devices with wide-bandgap devices. Gallium oxide devices have the potential to accelerate this transition by offering comparable or even superior performance to other wide-bandgap devices, but at a much lower cost. Recent breakthroughs include demonstration of a laboratory-scale gallium oxide transistors and diodes; however, a functional power electronics package for these devices is yet to be developed. In this paper, the research methodology in designing an electronics package for gallium oxide devices is outlined. Finite element-based thermal and thermomechanical modeling simulations were conducted to realize a package design that meets the combined target of minimal thermal resistance and improved reliability. Different package designs that include various material combinations and cooling configurations were explored, and their thermal and thermomechanical performance are reported. Furthermore, the short-circuit withstanding capabilities of gallium oxide devices were studied and compared with silicon carbide.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2022

Control of Grid-Connected Multiport MV Power Electronics Energy Hub: Preprint

In this paper a new concept of multiport modular medium-voltage power electronics hub (M3PE-HUB) is introduced for future power grid. The goal for this project is to design, develop, and demonstrate foundational technologies and capabilities for multiport power electronics energy hubs that can serve as intelligent devices to coordinate and control several different sources and loads. In this paper, the architecture of the controller, the central controls, and its verification is presented.

controls↗
DOE OSTI2022

Power Electronic Hardware-in-the-Loop (PE-HIL): Testing Individual Controllers in Large-Scale Power Electronics Systems

Large power electronics systems like multi-port autonomous reconfigurable solar power plant (MARS) are increasingly being researched upon to integrate emerging energy sources. MARS connects photovoltaic (PV) systems and energy storage systems (ESSs) to high-voltage direct current (HVdc) links/grids and high-voltage alternating current (ac) transmission grids. As these large power electronics systems incorporate complex hierarchical control systems that are close-by and communicate fast, the control systems require an unique power electronic hardware-in-the-loop (PE-HIL) real-time architecture to evaluate individual controllers. In this paper, a PE-HIL real-time architecture is proposed to evaluate one of the hundreds to thousands of digital signal processors (DSPs) that are a part of the complex hierarchical control system. The DSP connects to a central processing unit (CPU) and a field programmable gate array (FPGA) that form a part of the upper levels of the control system. The DSP is part of the lower level of the control system. The proposed PE-HIL architecture is tested and evaluated. Preliminary test results are presented to showcase the concept.

Debnath, Suman↗
DOE OSTI2024

Designing Ta C Virtual Substrates for Vertical Al x Ga 1 − x N Power Electronics Devices

Power electronics are critical for a sustainable energy future, playing a key role in electrification and integration of renewable energy sources into the grid. Advances in ultrawide band gap materials are needed to handle higher powers in smaller form factors while reducing electrical and thermal losses. High Al content Al x Ga 1 − x N is theoretically capable of meeting these demands, but its impact in power electronics has been severely restricted by a lack of substrates that can satisfy conductivity, lattice matching, and/or thermal expansion requirements. We demonstrate that electrically conductive Ta C can be used as a virtual substrate for Al x Ga 1 − x N heteroepitaxy. Scaleably sputtered Ta C grown on Al 2 O 3 , followed by high-temperature face-to-face annealing, produces a thin film Ta C template with an effective hexagonal lattice constant matched to Al 0.70 Ga 0.30 N . Annealing of the Ta C promotes recrystallization, significantly improving crystallinity and reducing crystalline defects from as-deposited columnar grains to a step-and-terrace surface morphology, enabling the subsequent growth of high-quality Al 0.70 Ga 0.30 N by molecular beam epitaxy. X-ray diffraction and scanning transmission electron microscopy confirm that the Al x Ga 1 − x N layer is heteroepitaxially aligned, strain-free, and lattice-matched, transitioning abruptly from Ta C to Al x Ga 1 − x N without intermediate phases. These results demonstrate Ta C virtual substrates as electrically conductive, lattice-matched, and thermally compatible templates for vertical Al x Ga 1 − x N devices that can meet the growing power needs of a sustainable energy future. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗
NASA NTRS1991

Power electronics for low power arcjets

In anticipation of the needs of future light-weight low-power spacecraft, arcjet power electronics in the 100- to 400-W operating range were developed. Power topologies similar to those in the higher 2-kW and 5- to 30-kW power range were implemented, including a four-transistor bridge-switching circuit, current-mode pulse-width modulated control, and an output current averaging inductor with an integral pulse generation winding. Reduction of switching transients was accomplished using a low inductance power distribution network, and no passive snubber circuits were necessary for power switch protection. Phase shift control of the power bridge was accomplished using an improved pulse width modulation to phase shift converter circuit. These features, along with conservative magnetics designs, allowed power conversion efficiencies of greater than 92.5 percent to be achieved into resistive loads over the entire operating range of the converter.

Hamley, John A.↗
NASA NTRS1991

Power electronics for low power arcjets

In anticipation of the needs of future light-weight, low-power spacecraft, arcjet power electronics in the 100 to 400 W operating range were developed. Limited spacecraft power and thermal control capacity of these small spacecraft emphasized the need for high efficiency. Power topologies similar to those in the higher 2 kW and 5 to 30 kW power range were implemented, including a four transistor bridge switching circuit, current mode pulse-width modulated control, and an output current averaging inductor with an integral pulse generation winding. Reduction of switching transients was accomplished using a low inductance power distribution network, and no passive snubber circuits were necessary for power switch protection. Phase shift control of the power bridge was accomplished using an improved pulse width modulation to phase shift converter circuit. These features, along with conservative magnetics designs allowed power conversion efficiencies of greater than 92.5 percent to be achieved into resistive loads over the entire operating range of the converter. Electromagnetic compatibility requirements were not considered in this work, and control power for the converter was derived from AC mains. Addition of input filters and control power converters would result in an efficiency of on the order of 90 percent for a flight unit. Due to the developmental nature of arcjet systems at this power level, the exact nature of the thruster/power processor interface was not quantified. Output regulation and current ripple requirements of 1 and 20 percent respectively, as well as starting techniques, were derived from the characteristics of the 2 kW system but an open circuit voltage in excess of 175 V was specified. Arcjet integration tests were performed, resulting in successful starts and stable arcjet operation at power levels as low as 240 W with simulated hydrazine propellants.

Hamley, John A.↗
DOE OSTI2023

Modular Power Electronics Approach for High Power Dynamic Wireless Charging System

Dynamic wireless power transfer (DWPT) can provide energy to EVs in motion and extend the drive range. Upscaling the charging power to 200 kW (High Power DWPT) reduces the percentage of electrified roadway required, and the solution becomes cost-effective. To smooth the power at the battery and grid, a secondary regulation stage must be added. The DWPT system therefore relies on power electronics to interface with the coils and regulate the power flow. Designing this high power system using wide bandgap devices makes ensuring high efficiency, small size, and reliable operation very challenging, and significant engineering effort is required to build such complicated systems for large-scale installation and deployment. Here, this paper describes a modular design approach for the power electronics to achieve the 200 kW wireless power transfer. As described, the SiC power electronics building block is designed, simulated, and characterized. The approach is validated in the DWPT system to build the inverter, the rectifier, and the DC/DC converter, which demonstrated high performance and reliable operation with 188 kW power.

42 ENGINEERING↗
DOE OSTI2016

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludes with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules: Preprint

Insulated gate bipolar transistor (IGBT) power modules are devices commonly used for switching of high voltages and currents. Usage and environmental conditions can cause these power modules to degrade over time, and this gradual process may eventually lead to catastrophic failure of the device. This degradation process may cause some early performance symptoms related to the state of health of the power module, making it possible to detect reliability degradation of the IGBT module. Testing can be used to accelerate this process, permitting a rapid determination of whether specific declines in device reliability can be characterized. In this study, thermal cycling was conducted on multiple power modules simultaneously in order to assess the effect of thermal cycling on the degradation of the power module. In-situ monitoring of temperature was performed from inside each power module using high temperature thermocouples. Device imaging and characterization was performed along with temperature data analysis, to assess failure modes and mechanisms within the power modules. While the experiment was aimed to assess the potential damage effects of thermal cycling on die attach, results indicated that wirebond degradation was the life limiting failure mechanism.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2022

Charaterization of Emerging Computing Architectures for Dynamic Simulation of Future Power Grids with Large-Scale Power Electronics

The increasing penetration of power electronics in power grids significantly raises the computing requirements in a real-time (and/or fast) simulation of the power grid. The real-time simulation is an enabler for evaluating controllers, protection systems, new equipment, and twinning. In this paper, emerging computing architectures such as tensor processing units (TPU), neural/neuromorphic processing units (NPU), and quantum processing units (QPU) are introduced and characterized for the real-time (and/or fast) simulation of power electronics-dominated power grids. The metrics and the process to characterize emerging computing architectures to perform real-time (and/or fast) simulations of future power grids with power electronics are discussed. Three of the emerging computing units are characterized based on these metrics and the process developed. This characterization will enable identification and comparison of emerging computing architectures that can perform real-time (and/or fast) simulation of future power grids.

Choi, Jongchan↗