Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “PIN diodes”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2

Development for application of parylene coatings

A practical method of applying a parylene (paraxylene) coating to hybrid microcircuit devices was developed for the prevention of circuit malfunctions existing prior to package sealing or formed upon exposure to the service environment. It was found that paralene and an associated primer (if used) had generally little or no adverse effect on the active and passive elements of typical hybrid microcircuits. Exceptions were related to high frequency circuitry, low resistivity thick film resistors, and highly sensitive PIN diodes. Advantages of the use of the coating included increased dielectric strength and increased interconnection bond strength. Coating service life in nitrogen or nitrogen with low levels of oxygen as a contaminant is shown to be in excess of 1000 hours at 150 C and can be projected to be in excess of 5000 hours at 125 C.

Oberin, F. W.↗

Z-axis control loop for cathode-ray tubes

Inexpensive PIN diode detector samples screen brightness between camera frames generating error signal for feedback control of intensity. System was tested by taking flat-field exposures at several density levels over 4 hour period. Results showed processed film density levels varied by less than + or - 10 percent usually centering around + or - 8 percent.

Ray, A. J., Jr.↗

Design considerations for high-power VHF radar transceivers: T/R switch design

The transceiver (TR) switch developed at NOAA's Aeronomy Laboratory for use in their 50 kW peak power, 50 MHz transmitter is described. The switch mounts inside the transmitter chassis and was designed to be compact while retaining the ability to handle well over 50 kW peak power at average power levels up to 2 kW. The TR switch is a conventional TR/ATR design with equivalent /4 transmission line sections constructed of lumped constant coils and transmitting capacitors in ''Tee' sections. Two TR sections are placed in series to achieve adequate receiver protection. The switch is set into the ''transmit' mode by forward biasing the 3 pin diodes to about 1.2 amperes each. The receive mode is achieved by back biasing the diodes to -15 volts. A directional coupler is also incorporated into the TR switch box to provide a convenient monitor point for forward and reflected transmitter power.

Ecklund, W. L.↗

The electronic switching spherical array antenna for the Earth Radiation Budget Spacecraft

The ESSA is a microprocessor-controlled antenna for low orbiting spacecraft for telemetry and command relay through the Tracking and Data Relay Satellite System (TDRSS). The array is a hemispherical shape covered with disk radiating elements. A group of radiating elements are continuously selected by the microprocessor controller to form a beam in the direction of a TDRS. A radial switching power divider uses PIN diodes to select the desired radiating elements. The antenna gain is a function of the size of the hemispherical dome. A 30-inch diameter dome is presently being built for the Earth Radiation Budget Spacecraft (ERBS). Gain of this antenna over a hemisphere is 14 dBi and polarization is lefthand circular. There are 145 radiating elements with 12 being used at one time to form a beam. The ESSA subsystem weights 74 pounds and power consumption is 20 watts. RF power handling capability is 30 watts. The S-Band radiating elements have a 10 percent bandwidth that allows simultaneous transmission and reception.

Kudrna, K.↗

Observations of shadow bands at the total solar eclipse of 16 February 1980

Photoelectric observations of short term light variations (shadow bands) at the 16 Feb. 1980 total solar eclipse have been made using a set of spatially separated PIN diodes. Light variations in a bandpass of 1-500 Hz were detected during the half-minutes preceding and following the total phase. Fourier analysis of the noise spectrum of the variations reveals a sharp drop-off for frequencies above 50 Hz and an overall spectrum quite similar to previously reported power spectra of stellar scintillation. This is consistent with an atmospheric origin for the shadow bands. Cross-correlations between the detector outputs are low, suggesting a short persistence time for the turbulent elements causing the patterns.

Marschall, L. A.↗

Development of the EXITE detector - A new imaging detector for 20 - 300 keV astronomy

The development and testing of a detector to be used in the Energetic X-ray Imaging Telescope Experiment (EXITE) are reported. It consists of a 34 cm diameter NaI(Tl) crystal coupled directly to a single large image intensifier tube with associated silicon PIN diode readout. The measured spatial and energy resolutions at 122 keV are 6mm (FWHM) and 9 percent (FWHM), respectively. This energy resolution is about 50 percent better than that of any previously flown hard X-ray experiment. These resolutions decrease with the square root of the energy of the incident X-ray, indicating that they are determined by the number of photons emitted in the NaI(Tl) scintillator light flash.

Garcia, M. R.↗

Fast autotuning of a hydrogen maser by cavity Q modulation

A new fast autotuner for the hydrogen maser was implemented. By modulating the cavity, a phase shift in the maser output signal is induced which is proportional to the cavity tuning error. The phase shift is detected and fed back to a varactor tuner to stabilize the cavity against long-term drifts. Also, a PIN-diode cavity modulator which gives no incidental frequency shift over a very wide range of operation was developed. Modulated at over 200 Hz, it allows variations in maser cavity frequency to be compensated with a loop gain greater than 1000. Compensation of incidental amplitude modulation of the output was demonstrated.

Dick, G. J.↗

An adaptive array antenna for mobile satellite communications

The adaptive array is linearly polarized and consists essentially of a driven lambda/4 monopole surrounded by an array of parasitic elements all mounted on a ground plane of finite size. The parasitic elements are all connected to ground via pin diodes. By applying suitable bias voltages, the desired parasitic elements can be activated and made highly reflective. The directivity and pointing of the antenna beam can be controlled in both the azimuth and elevation planes using high speed digital switching techniques. The antenna RF losses are neglible and the maximum gain is close to the theoretical value determined by the effective aperture size. The antenna is compact, has a low profile, is inexpensive to manufacture and can handle high transmitter power.

Milne, Robert↗

Monolithic III-V/Silicon Spatial Light Modulator

Current techniques for growth of device-quality GaAs on silicon substrates enables fabrication of silicon-based version of photodiode-coupled spatial light modulator. Monolithic photodiode-coupled light-modulator array constructed on silicon substrate by growing InAs/GaAs multiple-quantum-wells over silicon PIN diode layer. Intermediate GaAs buffer layer confines attice-misfit dislocations to vicinity of silicon. Use of silicon makes available wider range of auxiliary on-chip signal-processing circuitry for coding and decoding of data, addition or subtraction of brightness levels, spatial reformatting, and rescaling.

Maserjian, Joseph↗

Noise characteristics of passive components for phased array applications

The results of a comparative study on noise characteristics of basic power combining/dividing and phase shifting schemes are presented. The theoretical basics of thermal noise in a passive linear multiport are discussed. A new formalism is presented to describe the noise behavior of the passive circuits, and it is shown that the fundamental results are conveniently achieved using this description. The results of analyses concerning the noise behavior of basic power combining/dividing structures (the Wilkinson combiner, 90 deg hybrid coupler, hybrid ring coupler, and the Lange coupler) are presented. Three types of PIN-diode switch phase shifters are analyzed in terms of noise performance.

Sonmez, M. Kemal↗

Optical multiple access techniques for on-board routing

The purpose of this research contract was to design and analyze an optical multiple access system, based on Code Division Multiple Access (CDMA) techniques, for on board routing applications on a future communication satellite. The optical multiple access system was to effect the functions of a circuit switch under the control of an autonomous network controller and to serve eight (8) concurrent users at a point to point (port to port) data rate of 180 Mb/s. (At the start of this program, the bit error rate requirement (BER) was undefined, so it was treated as a design variable during the contract effort.) CDMA was selected over other multiple access techniques because it lends itself to bursty, asynchronous, concurrent communication and potentially can be implemented with off the shelf, reliable optical transceivers compatible with long term unattended operations. Temporal, temporal/spatial hybrids and single pulse per row (SPR, sometimes termed 'sonar matrices') matrix types of CDMA designs were considered. The design, analysis, and trade offs required by the statement of work selected a temporal/spatial CDMA scheme which has SPR properties as the preferred solution. This selected design can be implemented for feasibility demonstration with off the shelf components (which are identified in the bill of materials of the contract Final Report). The photonic network architecture of the selected design is based on M(8,4,4) matrix codes. The network requires eight multimode laser transmitters with laser pulses of 0.93 ns operating at 180 Mb/s and 9-13 dBm peak power, and 8 PIN diode receivers with sensitivity of -27 dBm for the 0.93 ns pulses. The wavelength is not critical, but 830 nm technology readily meets the requirements. The passive optical components of the photonic network are all multimode and off the shelf. Bit error rate (BER) computations, based on both electronic noise and intercode crosstalk, predict a raw BER of (10 exp -3) when all eight users are communicating concurrently. If better BER performance is required, then error correction codes (ECC) using near term electronic technology can be used. For example, the M(8,4,4) optical code together with Reed-Solomon (54,38,8) encoding provides a BER of better than (10 exp -11). The optical transceiver must then operate at 256 Mb/s with pulses of 0.65 ns because the 'bits' are now channel symbols.

Mendez, Antonio J.↗

A laboratory system for the investigation of rain fade compensation techniques for Ka-band satellites

The design and performance of a rain fade simulation/counteraction system on a laboratory simulated 30/20 GHz, time division multiple access (TDMA) satellite communications testbed is evaluated. Severe rain attenuation of electromagnetic radiation at 30/20 GHz occurs due to the carrier wavelength approaching the water droplet size. Rain in the downlink path lowers the signal power present at the receiver, resulting in a higher number of bit errors induced in the digital ground terminal. The laboratory simulation performed at NASA Lewis Research Center uses a programmable PIN diode attenuator to simulate 20 GHz satellite downlink geographic rain fade profiles. A computer based network control system monitors the downlink power and informs the network of any power threshold violations, which then prompts the network to issue commands that temporarily increase the gain of the satellite based traveling wave tube (TWT) amplifier. After the rain subsides, the network returns the TWT to the normal energy conserving power mode. Bit error rate (BER) data taken at the receiving ground terminal serves as a measure of the severity of rain degradation, and also evaluates the extent to which the network can improve the faded channel.

Svoboda, James S.↗

Switched-beam radiometer front-end network analysis

The noise figure performance of various delay-line networks fabricated from microstrip lines with varying number of elements was investigated using a computer simulation. The effects of resistive losses in both the transmission lines and power combiners were considered. In general, it is found that an optimum number of elements exists, depending upon the resistive losses present in the network. Small resistive losses are found to have a significant degrading effect upon the noise figure performance of the array. Extreme stability in switching characteristics is necessary to minimize the nondeterministic noise of the array. For example, it is found that a 6 percent tolerance on the delay-line lengths will produce a 0.2 db uncertainty in the noise figure which translates into a 13.67 K temperature uncertainty generated by the network. If the tolerance can be held to 2 percent, the uncertainty in noise figure and noise temperature will be 0.025 db and 1.67 K, respectively. Three phase shift networks fabricated using a commercially available PIN diode switch were investigated. Loaded-line phase shifters are found to have desirable RF and noise characteristics and are attractive components for use in phased-array networks.

Trew, R. J.↗

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x < 500 mW) applications. Although the electrical characteristics of RF MEMS switches far surpass any existing technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

Jah, Muzar↗

Low-Loss, High-Isolation Microwave Microelectromechanical Systems (MEMS) Switches Being Developed

Switches, electrical components that either permit or prevent the flow of electricity, are the most important and widely used electrical devices in integrated circuits. In microwave systems, switches are required for switching between the transmitter and receiver; in communication systems, they are needed for phase shifters in phased-array antennas, for radar and communication systems, and for the new class of digital or software definable radios. Ideally, switches would be lossless devices that did not depend on the electrical signal's frequency or power, and they would not consume electrical power to change from OFF to ON or to maintain one of these two states. Reality is quite different, especially at microwave frequencies. Typical switches in microwave integrated circuits are pin diodes or gallium arsenide (GaAs) field-effect transistors that are nonlinear, with characteristics that depend on the power of the signal. In addition, they are frequency-dependent, lossy, and require electrical power to maintain a certain state. A new type of component has been developed that overcomes most of these technical difficulties. Microelectromechanical (MEMS) switches rely on mechanical movement as a response to an applied electrical force to either transmit or reflect electrical signal power. The NASA Glenn Research Center has been actively developing MEMS for microwave applications for over the last 5 years. Complete fabrication procedures have been developed so that the moving parts of the switch can be released with near 100-percent yield. Moreover, the switches fabricated at Glenn have demonstrated state-of-the-art performance. A typical MEMS switch is shown. The switch extends over the signal and ground lines of a finite ground coplanar waveguide, a commonly used microwave transmission line. In the state shown, the switch is in the UP state and all the microwave power traveling along the transmission line proceeds unimpeded. When a potential difference is applied between the cantilever and the transmission line, the cantilever is pulled downward until it connects the signal line to the ground planes, creating a short circuit. In this state, all the microwave power is reflected. The graph shows the measured performance of the switch, which has less than 0.1 dB of insertion loss and greater than 30dB of isolation. These switches consume negligible electrical power and are extremely linear. Additional research is required to address reliability and to increase the switching speed.

Ponchak, George E.↗

Radio Frequency (RF) Micro-Electromechanical Systems (MEMS) Switches for Space Communications

Micro-electromechanical systems (MEMS) is an emerging technology for radio frequency (RF) systems because it has the potential to dramatically decrease loss and improve efficiency. In this paper, we address the design and fabrication of novel MEMS switches being developed at NASA Glenn Research Center. Two types of switches are being developed: a microstrip series single pole single throw (SPST) switch and a coplanar waveguide (CPW) series SPST and single pole double throw (SPDT) switches. These are being fabricated as an integral part of 50 Ohm microstrip and CPW RF integrated circuits using microfabrication techniques. The construction of the switch relies on a cantilever beam that is partially supported by a dielectric post. The cantilever beam is electro-magnetically actuated. To decrease stiction, a Si3N4 thin film is deposited over the contact area. Thus, when the switch is closed, the ON-state insertion loss is governed by the parallel plate capacitance formed by the two contacts. The isolation in the OFF-state is governed by the parasitic capacitance when the cantilever is in the up position. RF MEMS switches have been demonstrated with 80% lower insertion loss than conventional solid state devices (GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and Silicon PIN diodes) based switches. For example, a conventional GaAs five-bit phase shifter which is required for beam steering in a phased array antenna has approximately 7 dB of insertion loss at 26.5 GHz where as a comparable MEMS based phase shifter is expected to have only 2 dB of insertion loss. This translates into 56% lower power dissipation and therefore decreases the thermal load on the spacecraft and also reduces the power amplifier requirements. These benefits will enable NASA to build the next generation of deep space science crafts and micro/nano satellites.

Simons, Rainee N.↗

RF MEMS Switches with SiC Microbridges for Improved Reliability

Radio frequency (RF) microelectromechanical (MEMS) switches offer superior performance when compared to the traditional semiconductor devices such as PIN diodes or GaAs transistors. MEMS switches have a return loss (RL) better than -25 dB, negligible insertion loss (IL), isolation better than -30 dB, and near zero power consumption. However, RF MEMS switches have several drawbacks the most serious being long-term reliability. The ability for the switch to operate for millions or even billions of cycles is a major concern and must be addressed. MEMS switches are basically grouped in two categories, capacitive and metal-to-metal contact. The capacitive type switch consists of a movable metal bridge spanning a fixed electrode and separated by a narrow air gap and thin insulating material. The metal-to-metal contact type utilizes the same basic design but without the insulating material. After prolonged operation the metal bridges, in most of these switches, begin to sag and eventually fail to actuate. For the metal-to-metal type, the two metal layers may actually fuse together. Also if the switches are not packaged properly or protected from the environment moisture may build up and cause stiction between the top and bottom electrodes rendering them useless. Many MEMS switch designs have been developed and most illustrate fairly good RF characteristics. Nevertheless very few have demonstrated both great RF performance and ability to perform millions/billions of switching cycles. Of these, nearly all are of metal-to-metal type so as the frequency increases RF performance decreases.

Scardelletti, Maximilian C.↗

A G-band 160 GHz T/R Module Concept for Planetary Landing Radar

In this work, the concept of a G-band transmit/receive (T/R) module centered at 160 GHz was discussed. The design makes use of state-of-the-art G-band MMIC low noise amplifiers and power amplifiers, and a high speed SPDT InGaAs PIN diode switch. The paper reports on the designs, chip results, and the integration concept for a 160 GHz T/R module. The G-band T/R module has applications toward precision altimetry and velocimetry measurements in landing radar, such as in future planetary landers on the surface of Mars

power amplifier↗