Development of 22.5 % p-type tunnel oxide passivated contact solar cells through efficiency enhancement by replacing local Al-BSF in PERC cells with (p+) poly-Si/SiO2 carrier selective contact
Not Available
Choi, Wook-Jin (ORCID:000000032568419X)↗
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Results for “PERC”
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Properties of PV Cell Fractures and Effects on Performance of Al-BSF and PERC Modules.
Abstract not provided.
Whitaker, Carolina M.↗
Degradation of PERC and Al-BSF Cells with UV Cutoff and White Variations of EVA and POE Encapsulant.
Abstract not provided.
Curran, Alan J.↗
Experimental Results and Issues on Equalization for Nonlinear Memory Channel: Pre-Cursor Enhanced Ram-DFE Canceler
This thesis investigates the effects of the High Power Amplifier (HPA) and the filters over a satellite or telemetry channel. The Volterra series expression is presented for the nonlinear channel with memory, and the algorithm is based on the finite-state machine model. A RAM-based algorithm operating on the receiver side, Pre-cursor Enhanced RAM-FSE Canceler (PERC) is developed. A high order modulation scheme , 16-QAM is used for simulation, the results show that PERC provides an efficient and reliable method to transmit data on the bandlimited nonlinear channel. The contribution of PERC algorithm is that it includes both pre-cursors and post-cursors as the RAM address lines, and suggests a new way to make decision on the pre-addresses. Compared with the RAM-DFE structure that only includes post- addresses, the BER versus Eb/NO performance of PERC is substantially enhanced. Experiments are performed for PERC algorithms with different parameters on AWGN channels, and the results are compared and analyzed. The investigation of this thesis includes software simulation and hardware verification. Hardware is setup to collect actual TWT data. Simulation on both the software-generated data and the real-world data are performed. Practical limitations are considered for the hardware collected data. Simulation results verified the reliability of the PERC algorithm. This work was conducted at NMSU in the Center for Space Telemetering and Telecommunications Systems in the Klipsch School of Electrical and Computer Engineering Department.
Yuan, Lu↗
Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell
The project objective was to develop a novel Si surface passivation method using chalcogens, sulfur (S) and/or selenium (Se), as passivating elements, to withstand industry-standard high temperature contacting and metallization schemes for p-type Si based passivated emitter and rear contact (p-PERC) solar cells. The back surface passivation of PERC cells has been improved drastically with the invention and successful application of an Al 2 O 3 passivation layer. However, the front n + diffused junction surface is still poorly passivated by the standard amorphous silicon nitride (SiNx) anti-reflection coating (ARC) layer. This project sought to address the passivation challenges of both front n+ emitter and undiffused p-Si back surface. Improved p-PERC solar cell performance with open circuit voltage (V OC ) > 680 mV and efficiency of 22% were targeted to validate superior defect passivation properties as compared to standard SiO 2 / Al 2 O 3 passivation. During this project, we systematically investigated process-structure-properties-performance relationships of this novel advanced defect passivation approach. The S/Se passivation was carried out by reacting industrial Czochralski (Cz) Si wafers in H 2 S and H 2 Se gases in a chemical vapor deposition (CVD) reactor at temperatures up to 700°C. After an exhaustive optimization of the process parameters (temperature, time, and gas concentration), we established an optimized process and demonstrated extremely low surface recombination velocities (SRVs) of 1.5 cm/s and 8 cm/s on n-type and p-type Si, respectively, by S-passivation. In-depth surface and interface characterization were performed using soft x-ray and photoelectron spectroscopies (XPS, UPS, XES), combined with capacitance-voltage-frequency (C-V-f) measurements, to decipher the surface chemical/electronic structure and interface defect state densities. These measurements provided critical understanding of the defect passivation mechanism and elucidated the presence of surface S-Si bonds, a reduction of surface dipoles, and low interface state densities (D it ) < 10 11 cm -2 ev -1 . We also found that the Se-passivation is inferior to the S-passivation (by at least one order of magnitude in SRV). Application of the optimized S-passivation to the n+ diffused emitter surface led to a low surface recombination current density, J0 ≈ 40 fA/cm 2 (~ 1/4 of the industry-standard SiNx-passivation), and high implied V OC (686 mV) in p-PERC solar cell structures. The S-passivation process also was found to improve the bulk quality of the p-type Si, better than the SiO 2 or Al 2 O 3 passivation processes. After successful demonstration of efficient passivation of Si surface defects by S, we extensively studied the air, thermal, and illumination stability of the passivation structure. S-passivation itself degrades in air due to competing reactions with moisture and oxygen to form oxides, which can be eliminated by a SiNx capping layer (also acting as a anti-reflective coating). After SiNx process optimization, we demonstrated illumination and thermally stable S-passivation with SRV < 5 cm/s and J 0 < 80 fA/cm 2 . These enhancements in Si passivation, incorporated into p-PERC cells, achieved an efficiency of 19.93% with V OC = 649 mV, using manufacturing metallization and contacting schemes. The low cell performance (cell V OC is much less than the implied V OC = 686 mV, anticipated from surface passivation) was identified due to degradation of S-passivation during the metal firing step (out-diffusion of S from the Si interface to the SiNx surface). The S-passivation of Si surfaces shows significant promise with excellent passivation quality, essential for high performance (high V OC , high efficiency) solar cells. Integration of this innovative defect passivation into devices, however, demands further development of the capping layer, low temperature (<700°C) metallization process, and/or engineering of advanced device structures. Surface passivation-dominated advanced Si solar cells, such as tunnel oxide passivated contacts and Si heterojunctions, are increasingly of interest due to their high-performance potential and will have a growing photovoltaic market share in the near future.
14 SOLAR ENERGY↗
Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells
This work reports on the application of sulfur (S)-passivation to passivated emitter and rear contact (PERC) solar cells. The emitter surface was passivated by hydrogen sulfide (H 2 S) gas phase reaction and capped by a hydrogenated amorphous silicon nitride (a-SiN x :H) layer. The sulfur passivation on a symmetrically n + diffused emitter is shown to lead to an emitter saturation current density (J 0n+ ) of 30 fA/cm 2 at R sheet,n+ ≈ 100 Ω/sq. The application of S-passivation to the emitter surface in the PERC cell structure, with the rear surface passivated by an aluminum oxide (Al 2 O 3 )/a-SiN x :H stack, showed a promising implied open-circuit voltage (iV OC ) of 686 mV before metallization. This iV OC was higher than that for the a-SiN x :H or SiO 2 /a-SiN x :H passivated emitter surfaces (675 and 674 mV, respectively) on PERC cells processed in the same run. However, a significant drop in cell V OC is observed for the S-passivated PERC cell after the completion of device fabrication with laser patterning, screen-printed metal contact deposition, and firing. Nonetheless, an efficiency of ~20% and a V OC of ~650 mV was achieved with an emitter surface passivated by sulfur. We identified that the 760°C contact firing process degrades the S-passivation quality. Furthermore, the surface morphology was studied, and a detailed surface analysis was performed to study the causes of the S-passivated surface degradation.
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PV Lifetime Project (2021 NREL Annual Report)
DOE's PV Lifetime project was initiated in 2016 with the goal of accurately characterizing the early-life evolution of photovoltaic (PV) field performance. Different PV cell and module technologies result in different initial performance loss rates due to effects like light-induced degradation (LID) and light & elevated temperature-induced degradation (LeTID). To accurately characterize the initial field performance loss requires the use of high-accuracy indoor IV curve measurements at standard test conditions. Therefore, PV modules involved in this study are removed from the field once or twice per year and brought indoors for measurement. Current samples deployed and monitored in this way include Jinko Solar (2016), Trina Solar (2016), Hanwha Q-Cells (2017), Panasonic (2018), LG (2018), Canadian Solar (2018), Mission Solar (2019). More recently, modules from Sunpreme (2019), and LONGi (2020) have been deployed but not yet analyzed. Overall annual performance loss rates are as follows: our first modules to be deployed (Jinko and Trina) have annual median performance loss rate between -0.4%/yr and -0.9%/yr, mainly concentrated in the first year. The QCells mono-PERC and multi-PERC modules have an annual degradation rate of -0.76%/yr and -0.69%/yr respectively, also concentrated in the first year of operation. Panasonic and LG modules displayed negligible performance loss in the past two years, at 0.1%/yr and -0.0%/yr respectively. They also were the only modules with initial IV curve measurements consistently above the nameplate rating. Possibly relatedly, these are also the only two N-type silicon module types analyzed so far. Canadian Solar multi-PERC modules demonstrated a -1.3%/yr degradation rate which actually accelerated in the past year, so this will be a module type to monitor in future years. Mission Solar modules exhibited strong recoverable performance loss, consistent with LeTID susceptibility. (The same is true for the Jinko JKM260 module type). Annual performance loss actually showed improvement in time at +0.3%/yr after 2 years in the field, although the module initially was measured at 3% below nameplate rating. These modules could therefore be experiencing a form of post-LeTID recovery. Initial measurements have been conducted on the next two module types - Sunpreme n-HIT and LONGi bifacial mono-PERC. We will report on initial year-1 performance change for these modules in the next PV Lifetime annual report. For the remaining modules, an additional year of field exposure will provide greater certainty in annual degradation rates, particularly for those with degradation concentrated in the initial year of field deployment.
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Development and Reliability of Screen-Printable Fire-Through Cu Paste for Passivated Contact Solar Cells
We present the development of copper (Cu) paste which has been screen printed on Selective Emitter-Passivated Emitter Rear Contact (SE-PERC) solar cells. This paste can also be applied to Tunnel Oxide Passivated Contact (TOPCON) solar cells due to its fire-through nature. Champion PERC cells have achieved ....efficiency with ...parameters . Accelerated testing to investigate reliability performance of the SE- PERC mini-modules were carried out in damp heat chamber with 85oC and 85% humidity. The devices were found to be operational even after 1,500 hours. Devices with screen printed Ag contacts on the front side have been studied in parallel to the Cu contacts for comparison.
copper paste↗
Impact of acetic acid exposure on metal contact degradation of different crystalline silicon solar cell technologies
Degradation due to acetic acid in photovoltaic (PV) modules has been a commonly observed phenomenon for both damp-heat exposure and outdoor operations. Acetic acid is a degradation byproduct of ethylene-vinyl acetate (EVA), a common module encapsulant. To address this issue, robust metallization pastes and cell technologies are being developed. However, it is important to assess how these technologies perform in an acetic acid environment and withstand degradation before they are implemented in the solar market. In this work, we investigate the impact of acetic acid exposure on four different cell groups: monofacial passivated emitter and rear contact (PERC) cells with advanced telluride-based front contact pastes, bifacial PERC cells with novel aluminum rear contact pastes, bifacial tunnel oxide passivated contacts (TOPCon) cells, and silicon heterojunction (SHJ) cells. These cells were exposed to acetic acid for different time increments. The recombination losses were characterized by Suns-VOC, and multi-variate regression analysis of intensity-dependent photoluminescence (PL) images with Griddler AI. Resistive losses were tracked with the transmission line method (TLM). Samples showing severe performance degradation were selected for further materials characterization to understand the root cause. Top-down and cross-sectional scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS) were performed to investigate the change in materials properties. Our study shows that the front contacts of the bifacial TOPCon cells and monofacial PERC cells were significantly affected by acetic acid exposure. Here, the SHJ cells were found to be the most stable.
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Assessing UV-Induced Degradation in Bifacial Modules of Different Cell Technologies
Bifacial technology enables solar cells to offer higher power output and lower levelized cost of energy compared to their monofacial counterparts. Here, we examined the adverse effects of ultraviolet-induced degradation (UVID) on a variety of high-efficiency silicon wafer-based bifacial cell technologies, including silicon heterojunction (SHJ), interdigitated back contact (IBC), passivated emitter rear contact (PERC), and passivated emitter rear totally-diffused (PERT). Both the front and rear sides of bifacial cells without any encapsulation were exposed to an artificially accelerated UV exposure test. After 2000 h of UV irradiation, the bifacial cells exhibited greater power loss with backside exposure indicating potential sensitivity of the rear passivation to UV. The highest power degradation is observed in SHJ cells, followed by p-PERC and n-PERT cell technologies. The degradation in SHJ cells is attributed to the reduction in V oc and FF, while the degradation in p-PERC and n-PERT cells is correlated with a significant drop in I sc . This suggests that each cell type/make degrades via different degradation pathways.
bifacial cells↗
Understanding the Mechanism of Light and Elevated Temperature Induced Degradation of p-type Silicon Solar Cells (Final Report)
Light- and elevated-temperature-induced degradation (LeTID) was first discovered in multicrystalline Si (mc-Si) solar cells and was initially attributed to metal impurities. Later, LeTID was reported in Czochralski (Cz) and float-zone (FZ) Si, and is considered as an important efficiency loss mechanism in p-type passivated emitter rear contact (p-PERC) Cz Si solar cells. LeTID causes ~10% relative and permeant efficiency losses in these cells in warmer climate regions where the module temperature is > 50 °C. Unlike light-induced degradation (LID), which is also observed in p-PERC cells, LeTID is slower and takes weeks to months in the field to saturate. Another difference compared to LID is that regeneration in LeTID proceeds very slowly, and field regeneration could take > 25 years — essentially the life of the module. Unlike B-O defects that are responsible for LID, neither B nor O impurities are directly involved in LeTID. LeTID appears to be unique to p-type Si, and is also observed in Ga-doped Si. Currently, most experimental evidence relates LeTID to the injection of hydrogen present in the dielectric surface passivation layers, such as SiN x and Al 2 O 3 , into the monocrystalline Si (c-Si) bulk during the fast-firing step. The involvement of hydrogen is further strengthened by controlled studies that show that increasing the amount of hydrogen in the dielectric during fast-firing increases the degree of LeTID. Similar to LID, a regeneration process has been discovered for LeTID. Regeneration of LeTID defects occurs when samples are exposed to 2–4 Suns illumination at elevated temperatures of 140–220 °C for 2–15 hr. Given the slower kinetics of LeTID and sample regeneration compared to LID, this poses a challenge for the manufacturing and field reliability of p-PERC cells, which will be the leading photovoltaic technologies over the next decade. Therefore, there is a need to understand LeTID and develop strategies to mitigate this effect. The defect responsible for LeTID has been extensively studied with over 100 publications, but direct spectroscopic evidence of this defect’s structure is lacking. Without an atomistic understanding of the LeTID defect, it is difficult to assess the long-term efficacy of the current industrial mitigation strategies. This, in turn, has implications on energy production for tens of gigawatts of these cells that will be deployed yearly worldwide. Using electron paramagnetic resonance, we identified a defect associated with LeTID with a g-value of 2.006, which we attribute to an Si dangling bond in an extended defect such as a vacancy agglomerate with H possibly within or in close vicinity. These vacancy agglomerates are likely created during the firing process, during which time H atoms are also injected into the bulk from the hydrogenated SiN x dielectric layer. Our atomistic-level insight shows that the LeTID defect can be mitigated by targeted intrinsic defect engineering of the c-Si material through a slower pull rate of the Cz ingot or 1000 °C oxygen ambient processing of the Si wafer to reduce the vacancy concentration. This project was a collaborative effort between the Colorado School of Mines and the National Renewable Energy Laboratory.
14 SOLAR ENERGY↗
PV Lifetime Project - 2025 NLR Annual Report
DOE's PV Lifetime project was initiated in 2016 with the goal of accurately characterizing the early-life evolution of photovoltaic (PV) field performance. Different PV cell and module technologies result in different initial degradation rates due to effects like light-induced degradation (LID) and light and elevated temperature-induced degradation (LeTID). To accurately characterize the initial field degradation of maximum power (Pmp) requires the use of high-accuracy indoor IV curve measurements at standard test conditions. Therefore, PV modules involved in this study are removed from the field once or twice per year and brought indoors for measurement under constant temperature and irradiance conditions. Overall annual degradation rates are as follows: our first modules to be deployed (Jinko, Trina, QCells) have annual median degradation rate between -0.4%/yr and -0.5%/yr mainly concentrated in the first year. Mission Solar, LG and Panasonic modules are all displaying modest degradation, better than -0.3% / year. Indeed, Mission Solar fielded modules degraded less than their control modules which remain indoors and un-exposed. This is also true for the LONGi monofacial modules, which had some field degradation, but not as much as the degradation of the indoor control modules. The LONGi bifacial modules on the other hand have degraded more in the field than their monofacial counterparts, although still a modest amount (-0.4 %/yr). Of the four newest module types in the study, only one has had better than average degradation. REC360NP2 (N-type TOPCon) had a slight performance increase over the first year and a half of field deployment. For the other three new module types (plus one older module type), degradation was more rapid. In our study of 16 module types, four have demonstrated degradation faster than -1%/yr: two N-type Heterojunction, one PERC bifacial and one PERC shingled module. The two heterojunction modules in our study are degrading the most rapidly. Sunpreme n-HIT bifacial modules are showing a loss rate around -1.5%/yr, for over -10% total to date. This is largely attributed to loss in front-side Isc. This is distinct from the REC 405AA-Pure modules which have degraded -6.8% in only a year and a half, for an annualized decline of -3.9 %/yr. For this module type, the decline is roughly half in Voc, with the remaining split between FF and Isc. Of the remaining two module types, Prism Solar PERC bifacial has declined -5% total since 2019, although this loss appears to have stabilized in the most recent measurement. The Solaria PowerX-400R Shingled module type has also lost around -3.2% in the first 1.5 years of field deployment. It remains to be seen if these losses will continue with time.
14 SOLAR ENERGY↗
PV Durability at Scale: Assessing Bifacial and TOPCon Field Performance
Recent field performance results of TOPCon and PERC Bifacial modules are presented based on small-scale deployments at NLR, and a selection of 3rd-party residential data. Bifacial PERC degradation rates are a median of -1 % / yr with bifacial TOPCon modules at a similar rate of -1.1 %/yr over the first couple of years. Comparable PERC Monofacial modules have a degradation rate of -0.5%/yr. Some TOPCon modules exhibited an indoor dark metastability effect which requires recovery by light soaking or UV exposure prior to IV curve measurement. Further monitoring is needed to confirm the long-term stability of TOPCon modules.
14 SOLAR ENERGY↗
FDNS CFD Code Benchmark for RBCC Ejector Mode Operation
Computational Fluid Dynamics (CFD) analysis results are compared with benchmark quality test data from the Propulsion Engineering Research Center's (PERC) Rocket Based Combined Cycle (RBCC) experiments to verify fluid dynamic code and application procedures. RBCC engine flowpath development will rely on CFD applications to capture the multi-dimensional fluid dynamic interactions and to quantify their effect on the RBCC system performance. Therefore, the accuracy of these CFD codes must be determined through detailed comparisons with test data. The PERC experiments build upon the well-known 1968 rocket-ejector experiments of Odegaard and Stroup by employing advanced optical and laser based diagnostics to evaluate mixing and secondary combustion. The Finite Difference Navier Stokes (FDNS) code was used to model the fluid dynamics of the PERC RBCC ejector mode configuration. Analyses were performed for both Diffusion and Afterburning (DAB) and Simultaneous Mixing and Combustion (SMC) test conditions. Results from both the 2D and the 3D models are presented.
Holt, James B.↗
FDNS CFD Code Benchmark for RBCC Ejector Mode Operation: Continuing Toward Dual Rocket Effects
Computational Fluid Dynamics (CFD) analysis results are compared with benchmark quality test data from the Propulsion Engineering Research Center's (PERC) Rocket Based Combined Cycle (RBCC) experiments to verify fluid dynamic code and application procedures. RBCC engine flowpath development will rely on CFD applications to capture the multi -dimensional fluid dynamic interactions and to quantify their effect on the RBCC system performance. Therefore, the accuracy of these CFD codes must be determined through detailed comparisons with test data. The PERC experiments build upon the well-known 1968 rocket-ejector experiments of Odegaard and Stroup by employing advanced optical and laser based diagnostics to evaluate mixing and secondary combustion. The Finite Difference Navier Stokes (FDNS) code [2] was used to model the fluid dynamics of the PERC RBCC ejector mode configuration. Analyses were performed for the Diffusion and Afterburning (DAB) test conditions at the 200-psia thruster operation point, Results with and without downstream fuel injection are presented.
West, Jeff↗
Long-Term Photovoltaic System Performance in Cold, Snowy Climates
As countries around the world transition towards renewable energy, there is increasing interest in using photovoltaic (PV) technologies to help decarbonize northern and alpine communities due to their scalability and affordability. However, a barrier to large-scale adoption of PV in cold climates is long-term performance uncertainty under snowfall, freeze-thaw cycles, low temperatures, and high winds. In this work, we provide a comprehensive review of published silicon degradation rates in cold Koppen-Geiger climate classifications of Dfb (humid continental), Dfc (subarctic), and ET (tundra). We first analyze the system degradation rates of three subarctic ground-mounted photovoltaic sites in North America using the RdTools year-on-year method: an Al-BSF double-axis tracking site in Fairbanks, Alaska (65degrees N); a PERC and silicon heterojunction bifacial vertical and south-tilted site in Fairbanks, Alaska; and a PERC south-facing fixed-tilt site in Fort Simpson, Northwest Territories (62degrees N). Degradation rates of these newly analyzed sites vary between -0.4%/year and -1.5%/year. Combining these data with previously reported cold climate degradation rates, we show that the distribution of cold climate degradation peaks at -0.1%/year to -0.2%/year but has a large tail with rates above -0.5%/year. The average reported cold climate degradation rate is -0.45%/year, whereas the median value is -0.33%/year. These results suggest that despite frequent freeze-thaw cycles and potential exposure to high wind and snow loads, PV systems in cold climates tend to degrade slower than PV systems in warmer climates. The limited sample size of reported degradation rates in cold climates (27) motivates the need for further data acquisition and monitoring efforts as new technologies are deployed.
14 SOLAR ENERGY↗
Screen printable copper pastes for silicon solar cells
The current work demonstrates the successful metallization of a PERC silicon solar cell with screen-printable copper (Cu) paste that is sintered at elevated temperature in air atmosphere. The existing state of the art in Silicon (Si) solar cell metallization is silver (Ag) paste; Cu cost is 1/100th the cost of Ag and has a comparable conductivity. However, Cu undergoes rapid oxidation at elevated temperatures and the high diffusion of Cu into Si restricts its usage in the metallization of silicon solar cells. In this paper, a Cu paste containing a proprietary mixture of antioxidant additives and diffusion inhibitors was used to make front gridlines on PERC cells. The Cu-printed cells were fired in an IR belt furnace with a peak temperature of 576°C in air atmosphere. The solar cells discussed here reached an efficiency of 19%, which is 88% of the efficiency measured for a commercial Ag-printed cell. The working devices were further characterized using STEM, EDX, ToF-SIMS and long-term suns-V oc studies demonstrating an absence of Cu diffusion. Furthermore, thermally stressing the Cu-printed solar cells yielded a reduction of less than 1.9% of the initial pseudo fill factor (pFF) after 1000 hours at 200°C. Here, the shunt resistance of cells monitored over 3 years remained within 2.5% of its initial value, which demonstrates the effectiveness of the Cu diffusion barrier.
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Insulation or Irradiance: Exploring Why Bifacial Photovoltaics Run Hot
Bifacial photovoltaics are predicted to become the dominant device architecture over the next couple of years, but their thermal performance is not yet well understood. In this study, we model the thermal effects of different backside lamination materials on the performance of bifacial PERC cells. Glass-glass laminated cells were found to operate hotter than equivalent glass-polymer backsheet packed cells. This was solely due to the increased absorption of rear side incident light.
bifacial↗