Quantum-Memory-Enabled Ultrafast Optical Switching in Carbon Nanotubes
Not provided.
Materials Science↗
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Results for “Optical switches”
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Wide bandgap optical switch circuit breaker
A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideband optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.
Voss, Lars F.↗
Ultrafast all-optical switching in III-V semiconductor metasurfaces.
Abstract not provided.
Vabishchevich, Polina↗
New trends in photonic switching and optical networking architectures for data centers and computing systems [Invited]
The rapid increases in data traffic coupled with user preferences are driving the data center and computing system service providers to offer energy-efficient, intelligent, flexible, cost-effective, high-capacity, and low-latency data services without added complexity to the users. Disaggregated heterogeneous reconfigurable computing systems realized by photonic switching and interconnects can enhance throughput and energy efficiency for artificial intelligence/machine learning (AI/ML) workloads, especially when aided by the AI/ML-enhanced control plane. Photonic switching and new optical networking architectures are expected to solve many of these challenging problems. This paper discusses new trends in photonic switching and optical network architectures for future data centers and computing systems summarized as follows: (1) flat reconfigurable disaggregated computing enabled by high-radix photonic switching and interconnects in data centers; (2) chiplet-based computing architectures empowered by embedded photonics toward heterogeneous reconfigurable computing; (3) nanosecond-scale photonic switching in data centers and computing systems; (4) AI/ML in self-driving, application-aware, and situation-aware data centers; (5) the emergence of flexible networking for cloud computing, edge computing, and split computing, as well as flexible networking for 5G/6G RF-optical networks; and (6) the deployment of embedded co-designed silicon photonics being considered for future data centers.
Yoo, S. J. Ben (ORCID:0000000274201871)↗
Ultrafast all-optical diffraction switching using semiconductor metasurfaces
Ultrafast all-optical switching using Mie resonant metasurfaces requires both on-demand tunability of the wavefront of the light and ultrafast time response. However, devising a switching mechanism that has a high contrast between its “on” and “off” states without compromising speed is challenging. Here, we report the design of a tunable Mie resonant metasurface that achieves this behavior. Our approach utilizes a diffractive array of semiconductor resonators that support both dipolar and quadrupolar Mie resonances. By balancing the strengths of the dipole and quadrupole resonances, we can suppress radiation into the first diffraction order, thus creating a clearly delineated “off”-state at the operating wavelength. Then, we use optical injection of free- carriers to spectrally shift the multipoles and rebalance the multipole strengths, thereby enabling radiation into the diffraction order—all on an ultrafast timescale. We demonstrate ultrafast off-to-on switching with I on /I off ≈ 5 modulation of the diffracted intensity and ultrafast on-to-off switching with Ion/Ioff ≈ 9 modulation. Furthermore, both switches exhibit a fast τ tr ≈ 2.7 ps relaxation time at 215 μJ cm -2 pump fluence. Further, we show that for higher fluences, the temporal response of the metasurface is governed by thermo-optic effects. This combination of multipole engineering with lattice diffraction opens design pathways for tunable metasurface-based integrated devices.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
A Dynamically-Reconfigurable Burst-Mode Link Using a Nanosecond Photonic Switch
Fast optical circuit switching has great potential to solve scaling issues with traditional packet-switch based networks and improve bandwidth and power efficiency in datacenter and high-performance computing applications. One difficultly in utilizing a fast optical switch is that the optical signal must be rapidly reacquired after each switching event so as to not significantly impact the overall throughput of the system. In this work we present a system-level integration of a nanosecond-scale $2 \times 2$ silicon photonic switch with a 25-Gbps burst-mode receiver that can lock in 31 ns. A novel FPGA-based control plane was used to generate test data, control the silicon photonic switch and burst-mode receiver, and measure bit errors at 12.5 and 20 Gbps. Error-free links (BER $< 10^{-12}$ ) with system-level reconfiguration times below 60 ns (at 20 Gbps) and 90 ns (at 12.5 Gbps) including bit- and frame-synchronization are demonstrated.
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
An attempt to simulate laser-induced all-optical spin switching in a crystalline ferrimagnet
Interest in all-optical spin switching (AOS) is growing rapidly. The recent discovery of AOS in Mn 2 RuGa provides a much needed clean case of crystalline ferrimagnets for theoretical simulations. Here, we attempt to simulate it using the state-of-the-art first-principles method combined with the Heisenberg exchange model. We first compute the spin moments at two inequivalent manganese sites and then feed them into our model Hamiltonian. We employ an ultrafast laser pulse to switch the spins. We find that there is a similar optimal laser field amplitude to switch spins. However, we find that the exchange interaction has a significant effect on the system switchability. Weakening the exchange interaction could make the system unswitchable. This provides a crucial insight into the switching mechanism in ferrimagnets.
36 MATERIALS SCIENCE↗
First-principles insight into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn 2 RuGa
All-optical spin switching (AOS) represents a new frontier in magnetic storage technology—spin manipulation without a magnetic field—but its underlying working principle is not well understood. Many AOS ferrimagnets such as GdFeCo are amorphous and renders the high-level first-principles study unfeasible. The crystalline half-metallic Heusler Mn 2 RuGa presents an opportunity. Here we carry out hitherto the comprehensive density functional investigation into the material properties of Mn 2 RuGa, and introduce two concepts—the spin anchor site and the optical active site—as two pillars for AOS in ferrimagnets. In Mn 2 RuGa, Mn(4a) serves as the spin anchor site, whose band is below the Fermi level and has a strong spin moment, while Mn(4c) is the optical active site whose band crosses the Fermi level. Our magneto-optical Kerr spectrum and band structure calculation jointly reveal that the delicate competition between the Ru-4d and Ga-4p states is responsible for the creation of these two sites. Furthermore these two sites found here not only present a unified picture for both Mn 2 RuGa and GdFeCo, but also open the door for future applications. Specifically, we propose a Mn 2 Ru x Ga-based magnetic tunnel junction where a single laser pulse can control magnetoresistance.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Ternary molecular switching in a single-crystal optical actuator with correlated crystal strain
A growing portfolio of single-crystal optical actuators is forging a new class of photonic materials that hold prospects for quantum technologies. Ruthenium-based complexes that exhibit this phenomenon via SO 2 -linkage photoisomerisation are of particular interest since they display multiple metastable states, once induced by green light; yet, complete photoconversion into each SO 2 -isomeric state is rarely achieved. We discover a new complex, trans-[Ru(SO 2 )(NH 3 ) 4 (4-bromopyridine)]tosylate 2 , that produces 100% photoconverted η 1 -OSO isomeric crystal structures at 90 K, which fully transition into η 2 -(OS)O photoisomers upon warming to 100 K, while the dark-state η 1 -SO 2 structure is wholly recovered by heating the crystal to room temperature. Crystal structures and optical-absorption profiles of each state are captured via in-situ light-induced single-crystal X-ray diffraction and optical-absorption spectroscopy. Results show that both photoisomeric species behave as optical switches, but with distinct optical properties. The photoisomerisation process causes thermally-reversible micro- and nanoscopic crystal strain, as characterised by optical microscopy and in-situ light-induced atomic-force microscopy.
actuators↗
Anisotropic optical and magnetic response in self-assembled TiN–CoFe 2 nanocomposites
Transition metal nitrides (e.g., TiN) have shown tremendous promise in optical metamaterials for nanophotonic devices due to their plasmonic properties comparable to noble metals and superior high temperature stability. Vertically aligned nanocomposites (VANs) offer a great platform for combining two dissimilar functional materials with a one-step deposition technique toward multifunctionality integration and strong structural/property anisotropy. Here, we report a two-phase nanocomposite design combining ferromagnetic CoFe 2 nanosheets in the plasmonic TiN matrix as a new hybrid plasmonic metamaterial. The hybrid metamaterials exhibit anisotropic optical and magnetic responses, as well as a pronounced magneto-optical coupling response evidenced by Magneto-optic Kerr Effect measurement, owing to the novel vertically aligned structure. This work demonstrates a new TiN-based metamaterial with anisotropic properties and multifunctionality toward light polarization modulation, optical switching, and integrated optics.
36 MATERIALS SCIENCE↗
Bistable Optical Semiconductor Switching Based on C-Doped GaN
Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.
Carbon-dopped Gallium nitride (GaN:C)↗
Optical Memory, Switching, and Neuromorphic Functionality in Metal Halide Perovskite Materials and Devices
Metal halide perovskite-based materials have emerged over the past few decades as remarkable solution-processable opto-electronic materials with many intriguing properties and potential applications. Notably, these emerging materials have recently been considered for their promise in low-energy memory and information processing applications. In particular, their large optical cross-sections, high photoconductance contrast, large carrier diffusion lengths, and mixed electronic/ionic transport mechanisms are attractive for enabling memory elements and neuromorphic devices that are written and/or read in the optical domain. Here, we review recent progress towards memory and neuromorphic functionality in metal halide perovskite materials and devices where photons are used as a critical degree of freedom for switching, memory, and neuromorphic functionality.
14 SOLAR ENERGY↗
Modeling dark- and light-induced crystal structures and single-crystal optical absorption spectra of ruthenium-based complexes that undergo SO 2 -linkage photoisomerization
A family of coordination complexes of the type [Ru(SO 2 )(NH 3 ) 4 X] m+ Y n – (m, n = 1 or 2) exhibit optical switching capabilities in their single-crystal states. This striking effect is caused by the light-induced formation of SO 2 -linkage photoisomers, which are metastable if kept at suitably cool temperatures. We modeled the dark- and light-induced states of these large crystalline complexes via plane-wave (PW)- and molecular-orbital (MO)-based density functional theory (DFT) and time-dependent DFT in order to calculate their structural and optical properties; the calculated results are compared with experimental data. We show that the PW-DFT-based periodic models replicate the structural properties of these complexes more effectively than the MO-DFT-based molecular-fragment models, observing only small deviations in key bond lengths relative to the experimentally derived crystal structures. The periodic models were also found to more effectively simulate trends seen in experimental optical absorption spectra, with optical absorbance and coverage of the visible region increasing with the formation of the photoinduced geometries. The contribution of the metastable photoisomeric species more heavily focuses on the lower-energy end of the spectra. Spectra generated from the molecular-fragment models are limited by the geometry of the fragment used and the number of excited-state roots considered in those calculations. In general, periodic models outperform the molecular-fragment models owing to their ability to better appreciate the periodic phenomena that are present in these crystalline materials as opposed to MO approaches, which are finite methods. We thus demonstrate that PW-DFT-based periodic models should be considered as a more than viable method for simulating the optical and electronic properties of these single-crystal optical switches.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Gateway to all-optical spin switching in Heusler ferrimagnets: Pancharatnam-Berry tensor and magnetic moment ratio
Not provided.
Materials Science↗
Intrinsic optical bistability of photon avalanching nanocrystals
Optically bistable materials respond to a single input with two possible optical outputs, contingent on excitation history. Such materials would be ideal for optical switching and memory, but the limited understanding of intrinsic optical bistability (IOB) prevents the development of nanoscale IOB materials suitable for devices. Here we demonstrate IOB in Nd 3+ -doped KPb 2 Cl 5 avalanching nanoparticles, which switch with high contrast between luminescent and non-luminescent states, with hysteresis characteristic of bistability. Here we elucidate a non-thermal mechanism in which IOB originates from suppressed non-radiative relaxation in Nd 3+ ions and from the positive feedback of photon avalanching, resulting in extreme, >200th-order optical nonlinearities. The modulation of laser pulsing tunes the hysteresis widths, and dual-laser excitation enables transistor-like optical switching. This control over nanoscale IOB establishes avalanching nanoparticles for photonic devices in which light is used to manipulate light.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Temporal and spatial tuning of optical constants in praseodymium doped ceria by electrochemical means
Abstract Temporal and spatial tuning of the refractive index of optical thin films is desired for flat optics applications. The redistribution of mobile ions in mixed ionic-electronic conductors (MIEC) has been demonstrated to serve as a viable means for achieving optical tuning down to the nanoscale. Here we studied the dynamic range of the optical tuning achievable in the refractive index, in the MIEC oxide – Pr x Ce 1− x O 2− δ (PCO), for x = 0.1, 0.2 and 0.4, at 500 °C, by in-situ spectrophotometry. Significant increases in the modulation of both the imaginary and real optical constants in the visible and the adjacent spectra were obtained for increased doping levels. Device employing an electrochemical titration method was implemented to modulate the oxygen concentration, and thereby the optical transmission of PCO. Incorporation of a patterned top electrode allowed for the demonstration of spatial control of PCO thin film properties by in-situ video imaging of the optical switching process. The electrochemically induced optical state is shown to remain non-volatile upon quenching the device to room temperature under applied bias.
36 MATERIALS SCIENCE↗
Optical control of integer and fractional Chern insulators
Optical control of topology, particularly in the presence of electron correlations, is an interesting topic with broad scientific and technological impact. Twisted MoTe 2 bilayer (tMoTe 2 ) is a zero-field fractional Chern insulator (FCI), exhibiting the fractionally quantized anomalous Hall effect. As the chirality of the edge states and sign of the Chern number are determined by the underlying ferromagnetic polarization, manipulation of ferromagnetism would realize control of the Chern insulator (CI)/FCI states. Here, in this work, we demonstrate control of ferromagnetic polarization, and thus the CI and FCI states, by circularly polarized optical pumping in tMoTe 2 . At low excitation power, we achieve on-demand preparation of ferromagnetic polarization by optical training, that is, electrically tuning the system from non-ferromagnetic to desirable ferromagnetic states under helicity-selective optical pumping. With increased excitation power, we further realize direct optical switching of ferromagnetic polarization at a temperature far below the Curie temperature. Both optical training and direct switching are most effective near CI and FCI states, which we attribute to a gap-enhanced valley polarization of optically pumped holes. The magnetization can be dynamically switched by modulating the helicity of optical excitation. Spatially resolved measurements further demonstrate optical writing of ferromagnetic, and thus CI (or FCI) domains. Our work realizes precise optical control of a topological quantum many-body system with potential applications in topological spintronics, quantum memories and creation of exotic edge states by programmable patterning of integer and fractionally quantized anomalous Hall domains.
ferromagnetism↗