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All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Combined optimization of image-gathering and image-processing systems for scene feature detection

The relationship between the image gathering and image processing systems for minimum mean squared error estimation of scene characteristics is investigated. A stochastic optimization problem is formulated where the objective is to determine a spatial characteristic of the scene rather than a feature of the already blurred, sampled and noisy image data. An analytical solution for the optimal characteristic image processor is developed. The Wiener filter for the sampled image case is obtained as a special case, where the desired characteristic is scene restoration. Optimal edge detection is investigated using the Laplacian operator x G as the desired characteristic, where G is a two dimensional Gaussian distribution function. It is shown that the optimal edge detector compensates for the blurring introduced by the image gathering optics, and notably, that it is not circularly symmetric. The lack of circular symmetry is largely due to the geometric effects of the sampling lattice used in image acquisition. The optimal image gathering optical transfer function is also investigated and the results of a sensitivity analysis are shown.

Halyo, Nesim↗
NASA NTRS2001

A Hydrodynamic Theory for Spatially Inhomogeneous Semiconductor Lasers: Microscopic Approach

Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum and energy relaxation rates. These rates expressed as functions of temperatures and densities lead to microscopic expressions for self- and mutual-diffusion coefficients in the coupled density-temperature diffusion equations. Approximations for reducing the general two-component description of the electron-hole plasma (EHP) to a single-component one are discussed. In particular, we show that a special single-component reduction is possible when e-h scattering dominates over c-LO phonon scattering. The ambipolar diffusion approximation is also discussed and we show that the ambipolar diffusion coefficients are independent of e-h scattering, even though the diffusion coefficients of individual components depend sensitively on the e-h scattering rates. Our discussions lead to new perspectives into the roles played in the single-component reduction by the electron-hole correlation in momentum space induced by scatterings and the electron-hole correlation in real space via internal static electrical field. Finally, the theory is completed by coupling the diffusion equations to the lattice temperature equation and to the effective optical polarization which in turn couples to the laser field.

Li, Jianzhong↗
NASA NTRS1989

Pulsed Molecular Beams For Growth Of InAs On GaAs

Pauses for annealing reduce number of defects. Deposition process that includes pulsed molecular beams produces high-quality epitaxial layers of indium arsenide on gallium arsenide substrates. Layers made as much as 30 atoms thick without introducing excessive numbers of dislocations, despite 7.4-percent mismatch between InAs and GaAs crystal lattices. Layers offer superior electrical properties in such devices as optically addressed light modulators, infrared sensors, semiconductor lasers, and high-electron-mobility transistors. Technique applicable to other epitaxial systems in which lattices highly mismatched.

Grunthaner, Frank J.↗
NASA NTRS2002

Electron-phonon interaction on optical spectra of nanoelectronic devices

Information obtained on the solid-state lattice dynamics by electron-phonon interaction between lattice phonons and electrons could open up to learn more about lattice dynamics and to apply it in nanoelectronic devices including software reliability, nano-size capacitors, master clock sources, as well as non-contact temperature probes on nano-electronic and photonicdevices.

electron-phonon interactions lattice dynamics SrTi↗
NASA NTRS1970

Ion implantation damage effects in silicon

Ion implantation lattice damage effects in crystalline silicon with allowance for optical reflectivity, considering annealing temperature and amorphous layer formation

Eberle, D. E.↗
NASA NTRS2009

Inventions Utilizing Microfluidics and Colloidal Particles

Several related inventions pertain to families of devices that utilize microfluidics and/or colloidal particles to obtain useful physical effects. The families of devices can be summarized as follows: (1) Microfluidic pumps and/or valves wherein colloidal-size particles driven by electrical, magnetic, or optical fields serve as the principal moving parts that propel and/or direct the affected flows. (2) Devices that are similar to the aforementioned pumps and/or valves except that they are used to manipulate light instead of fluids. The colloidal particles in these devices are substantially constrained to move in a plane and are driven to spatially order them into arrays that function, variously, as waveguides, filters, or switches for optical signals. (3) Devices wherein the ultra-laminar nature of microfluidic flows is exploited to effect separation, sorting, or filtering of colloidal particles or biological cells in suspension. (4) Devices wherein a combination of confinement and applied electrical and/or optical fields forces the colloidal particles to become arranged into three-dimensional crystal lattices. Control of the colloidal crystalline structures could be exploited to control diffraction of light. (5) Microfluidic devices, incorporating fluid waveguides, wherein switching of flows among different paths would be accompanied by switching of optical signals.

Marr, David W.↗
NASA NTRS1971

Measurement of lattice damage caused by ion-implantation doping of semiconductors.

Discussion of two new techniques used to measure the lattice damage produced in GaAs by the implantation of 60 keV cadmium ions. In the first method, optical reflection spectra of the ion-implanted samples were measured in the wavelength range from 2000 to 4600 A. The decrease in reflectivity resulting from ion-implantation was used to determine the relative amount of lattice damage as a function of ion dose. The second technique employed the scanning electron microscope. Patterns very similar in appearance to Kikuchi electron diffraction patterns are obtained when the secondary and/or backscattered electron intensity is displayed as a function of the angle of incidence of the electron beam on a single crystal surface. The results of measurements made by both methods are compared with each other and with data obtained by the method of measuring lattice damage by Rutherford scattering of 1 MeV helium ions.

Hunsperger, R. G.↗
NASA NTRS2006

Northwest Africa 428: Impact-induced Annealing of an L6 Chondrite Breccia

Northwest Africa (NWA) 428 is an L chondrite that was successively thermally metamorphosed to petrologic type-6, shocked to stage S4-S5, brecciated, and annealed to approximately petrologic type-4. Its thermal and shock history resembles that of the previously studied LL6 chondrite, Miller Range (MIL) 99301, which formed on a different asteroid. The petrologic type-6 classification of NWA 428 is based on its highly recrystallized texture, coarse metal (150 +/- 150 micron), troilite (100 +/- 170 micron), and plagioclase (20-60 micron) grains, and relatively homogeneous olivine (Fa(sub 24.4 +/- 0.6)), low-Ca pyroxene (FS(sub 2.5+/- 0~,4) , and plagioclase (Ab(sub 84.2 +/- 0.4) compositions. The petrographic criteria that indicate shock stage S4-S5 include the presence of chromite veinlets, chromite-plagioclase assemblages, numerous occurrences of metallic Cu, irregular troilite grains within metallic Fe-Ni, polycrystalline troilite, duplex plessite, metal and troilite veins, large troilite nodules, and low-Ca clinopyroxene with polysynthetic twins. If the rock had been shocked before thermal metamorphism, low-Ca clinopyroxene produced by the shock event would have transformed into orthopyroxene. Post-shock brecciation is indicated by the presence of recrystallized clasts and highly shocked clasts that form sharp boundaries with the host. Post-shock annealing is indicated by the sharp optical extinction of the olivine grains; during annealing, the damaged olivine crystal lattices healed. If temperatures exceeded those approximating petrologic type-4 (approximately 600-700 C) during annealing, the low-Ca clinopyroxene would have transformed into orthopyroxene. The other shock indicators, likewise, survived the mild annealing. An impact event is the most plausible source of post-metamorphic, post-shock annealing because any A1-26 that may have been present when the asteroid accreted would have decayed away by the time NWA 428 was annealed. The similar inferred histories of NWA 428 (L6) and MIL 99301 (LL6) indicate that impact heating affected more than 1 ordinary chondrite parent body.

Rubin, Alan E.↗
NASA NTRS2005

MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.

Xiao, Ye-Gao↗
NASA NTRS2007

Nonlinear Optics and Applications

Nonlinear optics is the result of laser beam interaction with materials and started with the advent of lasers in the early 1960s. The field is growing daily and plays a major role in emerging photonic technology. Nonlinear optics play a major role in many of the optical applications such as optical signal processing, optical computers, ultrafast switches, ultra-short pulsed lasers, sensors, laser amplifiers, and many others. This special review volume on Nonlinear Optics and Applications is intended for those who want to be aware of the most recent technology. This book presents a survey of the recent advances of nonlinear optical applications. Emphasis will be on novel devices and materials, switching technology, optical computing, and important experimental results. Recent developments in topics which are of historical interest to researchers, and in the same time of potential use in the fields of all-optical communication and computing technologies, are also included. Additionally, a few new related topics which might provoke discussion are presented. The book includes chapters on nonlinear optics and applications; the nonlinear Schrodinger and associated equations that model spatio-temporal propagation; the supercontinuum light source; wideband ultrashort pulse fiber laser sources; lattice fabrication as well as their linear and nonlinear light guiding properties; the second-order EO effect (Pockels), the third-order (Kerr) and thermo-optical effects in optical waveguides and their applications in optical communication; and, the effect of magnetic field and its role in nonlinear optics, among other chapters.

Abdeldayem, Hossin A.↗
NASA NTRS1993

Multiresponse Imaging For Improved Resolution

Images restored with resolution finer than sampling lattice. Multiresponse imaging overcomes sampling-passband constraint and critically constrained only by optical response and sensitivity of image-gathering device. Process consists of multiresponse image gathering and Wiener-matrix restoration. Image-gathering process acquires sequence of images, each with different optical response so within-pass-band and aliased signal components weighted differently. Wiener-matrix filter, in turn, unscrambles within-passband and aliased frequency components of undersampled signal and restores them up to cutoff frequency of optical response.

Fales, Carl L., Jr.↗
NASA NTRS2006

Bias Selective Operation of Sb-Based Two-Color Photodetectors

Multicolor detectors have a strong potential to replace conventional single-color detectors in application dealing with the simultaneous detection of more than one wavelength. This will lead to the reduction of heavy and complex optical components now required for spectral discrimination for multi-wavelengths applications. This multicolor technology is simpler, lighter, compact and cheaper with respect to the single-color ones. In this paper, Sb-based two-color detectors fabrication and characterization are presented. The color separation is achieved by fabricating dual band pn junction on a GaSb substrate. The first band consists of an InGaAsSb pn junction for long wavelength detection, while the second band consists of a GaSb pn junction for shorter wavelength detection. Three metal contacts were deposited to access the individual junctions. Surface morphology of multi-layer thin films and also device characteristics of quasi-dual band photodetector were characterized using standard optical microscope and electro-optic techniques respectively. Dark current measurements illustrated the diode behavior of both lattice-matched detector bands. Spectral response measurements indicated either independent operation of both detectors simultaneously, or selective operation of one detector, by the polarity of the bias voltage, while serially accessing both devices.

Abedin, M. N.↗
NASA NTRS1998

Lattice Dynamics of Colloidal Crystals During Photopolymerization of Acrylic Monomer Matrix

The photoinitiated bulk polymerization process, which has been used recently in the manufacture of solid optical diffraction filters, is examined to understand the dynamics of both the crystalline colloidal arrays (CCA) and the host monomer species. Our analysis indicates that volume shrinkage of the monomer, changes in the dielectric properties of the monomer, and inhomogeneities of polymerization reaction rate across the dispersion during the polymerization process, are the major contributors for observed lattice compression and lattice disorder of the CCA of silica spheres in polymerized acrylic/methacrylic ester films. The effect of orientation of photocell with respect to the radiation source on Bragg diffraction of CCA indicated the presence of convective stirring in the thin fluid system during the photopolymerization that deleteriously affects the periodic array structures. To devise reproducible and more efficient optical filters, experimental methods to minimize or eliminate convective instabilities in monomeric dispersions during polymerization are suggested.

Sunkara, H. B,↗
NASA NTRS1984

Mossbauer spectroscopy and X-ray diffraction of samples from the Santa Catharina iron meteorite

Conversion electron Mossbauer spectroscopy (CEMS) of samples from the Santa Catharina iron meteorite shows the presence of the ordered iron-nickel phase with 50% Ni, tetrataenite, and of the paramagnetic iron-nickel phase with 25% Ni. The FeNi phase with 50% Ni amounts to 70% of the iron-nickel alloys. Futhermore, the CEM spectra show the presence of small peaks from one or more spinel compounds. These small peaks are more pronounced when regions near the rim of the samples are analyzed. The X-ray diffraction of different areas of the samples, both optically dark and optically light areas, shows the presence of a diffraction pattern from a single f.c.c. lattice with a lattice parameter of a=3.58A This means that the two different Fe-Ni phases seen in the CEMS analysis occupy the same lattice. The X-ray photographs also show the presence of super-structure reflections from the ordered FeNi phase, and that the orientation of the f.c.c. lattice is the same within the whole sample.

Roy-Poulsen, H.↗
NASA NTRS1950

Fundamental Effects of Aging on Creep Properties of Solution-Treated Low-Carbon N-155 Alloy

A method is developed whereby the fundamental mechanisms are investigated by which processing, heat treatment, and chemical composition control the properties of alloys at high temperatures. The method used metallographic examination -- both optical and electronic --studies of x-ray diffraction-line widths, intensities, and lattice parameters, and hardness surveys to evaluate fundamental structural conditions. Mechanical properties at high temperatures are then measured and correlated with these measured structural conditions. In accordance with this method, a study was made of the fundamental mechanism by which aging controlled the short-time creep and rupture properties of solution-treated low-carbon n-155 alloy at 1200 degrees F.

Frey, D N↗
NASA NTRS1997

Temperature Induced Alpha Factor

Temperature effects can be important in short pulse propagation or in CW operation of VCSELs. In those cases, the optical susceptibility function is, in general, a function of carrier density and plasma and/or lattice temperature(s). Just as there is an alpha factor induced by the density change (density alpha), there are alpha factors induced by lattice or plasma temperature change (temperature alphas). The density alpha factor has been studied quite extensively, while the temperature alpha factors have not been computed for any structure. I will report on my first calculations of alpha factors induced by the plasma and lattice temperature change for GaAs/AlGaAs quantum wells using microscopic theory. Besides, the temperature dependence of the density alpha factor is also considered.

Ning, C. Z.↗