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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

nBn and pBp infrared detectors with graded barrier layer, graded absorption layer, or chirped strained layer super lattice absorption layer

An nBn detector is described where for some embodiments the barrier layer has a concentration gradient, for some embodiments the absorption layer has a concentration gradient, and for some embodiments the absorption layer is a chirped strained layer super lattice. The use of a graded barrier or absorption layer, or the use of a chirped strained layer super lattice for the absorption layer, allows for design of the energy bands so that the valence band may be aligned across the device. Other embodiments are described and claimed.

Gunapala, Sarath D.↗
NASA NTRS2006

Fabrication and Characterization of Superconducting NbN Nanowire Single Photon Detectors

This viewgraph presentation describes the fabrication of large area superconducting Niobium Nitride nanowire single photon detectors. The topics include: 1) Introduction and Motivation; 2) Operation of SNSPD Detectors; 3) NbTiN Deposition; 4) Fabrication Details; 5) Backside Coupled SNSPD; 6) Measurement Apparatus; 7) Electrical Response of a 15x15 micrometer SNSPD to 1064nm radiation; 8) Detector Efficiency vs Bias Current; 9) Interarrival Time Plot; 10) Detector Linearity; and 11) Conclusion.

single proton dectectors↗
NASA NTRS1988

Method of producing high T(subc) superconducting NBN films

Thin films of niobium nitride with high superconducting temperature (T sub c) of 15.7 K are deposited on substrates held at room temperature (approx 90 C) by heat sink throughout the sputtering process. Films deposited at P sub Ar 12.9 + or - 0.2 mTorr exhibit higher T sub c with increasing P sub N2,I with the highest T sub c achieved at P sub n2,I= 3.7 + or - 0.2 mTorr and total sputtering pressure P sub tot = 16.6 + or - 0.4. Further increase of N2 injection starts decreasing T sub c.

Thakoor, Sarita↗
NASA NTRS2008

Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors

Superconducting-nanowire single-photon detectors (SNSPDs) in which Nb(x)Ti(1-x)N (where x<1) films serve as the superconducting materials have shown promise as superior alternatives to previously developed SNSPDs in which NbN films serve as the superconducting materials. SNSPDs have potential utility in optical communications and quantum cryptography. Nb(x)Ti(1-x)N is a solid solution of NbN and TiN, and has many properties similar to those of NbN. It has been found to be generally easier to stabilize Nb(x)Ti(1-x)N in the high-superconducting-transition temperature phase than it is to so stabilize NbN. In addition, the resistivity and penetration depth of polycrystalline films of Nb(x)Ti(1-x)N have been found to be much smaller than those of films of NbN. These differences have been hypothesized to be attributable to better coupling at grain boundaries within Nb(x)Ti(1-x)N films.

Stern, Jeffrey A.↗
NASA NTRS2008

Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors

Superconducting-nanowire singlephoton detectors (SNSPDs) in which Nb(x)Ti(1-x)N (where x<1) films serve as the superconducting materials have shown promise as superior alternatives to previously developed SNSPDs in which NbN films serve as the superconducting materials. SNSPDs have potential utility in optical communications and quantum cryptography. Nb(x)Ti(1-x)N is a solid solution of NbN and TiN, and has many properties similar to those of NbN. It has been found to be generally easier to stabilize NbxTi1 xN in the high-superconducting-transitiontemperature phase than it is to so stabilize NbN. In addition, the resistivity and penetration depth of polycrystalline films of Nb(x)Ti(1-x)N have been found to be much smaller than those of films of NbN. These differences have been hypothesized to be attributable to better coupling at grain boundaries within Nb(x)Ti(1-x)N films.

Stem, Jeffrey A.↗
NASA NTRS1989

Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

An edge defined geometry is used to produce very small area tunnel junctions in a structure with niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier. The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 to 500 C for improved quality of the electrode.

Hunt, Brian D.↗
NASA NTRS1992

Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

An edge defined geometry is used to produce very small area tunnel junctions in a structure with niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier. The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.

Hunt, Brian D.↗
NASA NTRS1989

Superconducting phonon spectroscopy using a low-temperature scanning tunneling microscope

The low-temperature scanning tunneling microscope (STM) system described by LeDuc et al. (1987) was used to observe the phonon density of states effects in a superconductor. Using techniques based on those employed in macroscopic tunneling spectroscopy, electron tunneling current-voltage (I-V) spectra were measured for NbN and Pb, and dI/dV vs V spectra were measured using standard analog derivative techniques. I-V measurements on NbN and Pb samples under typical STM conditions showed no evidence for multiparticle tunneling effects.

Leduc, H. G.↗
NASA NTRS1989

NbN/MgO/NbN edge-geometry tunnel junctions

The fabrication and low-frequency testing of the first edge-geometry NbN/MgO/NbN superconducting tunnel junctions are reported. The use of an edge geometry allows very small junction areas to be obtained, while the all-NbN electrodes permit operation at 8-10 K with a potential maximum operating frequency above 1 THz. Edge definition in the base NbN film was accomplished utilizing Ar ion milling with an Al2O3 milling mask, followed by a lower energy ion cleaning step. This process has produced all-refractory-material tunnel junctions with areas as small as 0.1 sq micron, resistance-area products less than 21 ohm sq micron, and subgap to normal state resistance ratios larger than 18.

Hunt, B. D.↗
NASA NTRS1990

Development of components for submillimeter wave heterodyne radiometers at JPL

Components for the key elements of submillimeter wave heterodyne receivers are described. The devices and components are inherently space qualifiable having low power and mass needs and exhibiting robustness. Nb and NbN superconductor insulator superconductor (SIS) tunnel junctions are selected for the nonlinear mixing element because of their robustness. NbN exhibits a large superconducting bandgap, allowing operation in excess of 1500 GHz. Both waveguide mounts, for the lower frequencies and planar antenna mixer mounts for the higher frequency range, are used. Quasi-optical components are used for frequency multiplexing and combining.

Frerking, Margaret A.↗
NASA NTRS1992

Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

A method for fabricating an edge geometry superconducting tunnel junction device is discussed. The device is comprised of two niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.

Hunt, Brian D.↗