Design of a radioactive non-contact encoder
N-P junction diode detector used in design of radioactive source non-contact encoder
Barnett, M. B.↗
SEARCH · Engineering Papers
Results for “N-P”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Performance characteristics of Ti-Ag contact N/P and P/N silicon solar cells
Ti-Ag contact N-P and P-N single crystal Si solar cells electrical and mechanical performance characteristics
Schmidt, L. W.↗
Silicon solar cell development and radiation effects study for low temperature and low illumination intensity operation, volume 2
The results are presented of a study to determine the effect of in-situ proton irradiation upon low temperature, low intensity performance of several cell types. The cell types were selected in an attempt to distinguish variations in temperature-dependent radiation resistance which could be attributed to the n-p or p-n structure, diffused or implanted junctions, crucible grown or float-zone type base material, and high or low base resistivity. The results indicate that while expected variations of performance occur at room temperature, all cell types degrade more or less similarly at lower temperatures with normalized degradation becoming increasingly rapid as temperature is reduced. Recommendations for an optimized cell for Jupiter probe use are included along with a definition of the testing required on these cells to insure good performance characteristics.
Kirkpatrick, A. R.↗
JPL lithium doped solar cell development program
One of the most significant problems encountered in the use of silicon solar cells in space is the sensitivity of the device to electron and proton radiation exposure. The p-diffused-into-n-base solar cells were replaced with the more radiation tolerant n-diffused-into-p-base solar cells. Another advancement in achieving greater radiation tolerance was the discovery that the addition of lithium to n-base silicon resulted in what appeared to be annealing of radiation-induced defects. This phenomenon is being exploited to develop a high efficiency radiation resistant lithium-doped solar cell. Lithium-doped solar cells fabricated from oxygen-lean and oxygen-rich silicon were obtained with average initial efficiencies of 11.9% at air mass zero and 28 C, as compared to state-of-the-art n-p cells fabricated from 10 ohm cm silicon with average efficiencies of 11.3% under similar conditions. Lithium-doped cells demonstrated the ability to withstand three to five times the fluence of 1-MeV electrons before degrading to a power equivalent to state-of-the-art solar cells. The principal investigations are discussed with respect to fabrication of high efficiency radiation resistant lithium-doped cells, including starting material, p-n junction diffusion, lithium source introduction, and lithium diffusion.
Berman, P. A.↗
Solar array synthesis computer program
Photovoltaic characteristics have been measured on solar cells irradiated by 1 MeV electrons to fluences ranging from 1 x 10 to the 13th power e/sq cm to 1 x 10 to the 16th power e/sq cm, for cell temperatures ranging from 123 K to 473 K and for illumination intensities ranging from 5m W/sq cm to 1830m W/sq cm. Empirical equations have been derived from these measurements to describe the behavior of light generated current, open circuit voltage and I-V curve shape over various portions of these temperature/illumination ranges. Both 10 ohms/cm and 17 ohms/cm n-p silicon solar cells were tested, and similar analytical expressions were formulated for easy comparison between the two resistivities.
Faith, T. J.↗
Study of interaction among silicon, lithium, oxygen and radiation-induced defects for radiation-hardened solar cells
In order to improve reliability and the useful lifetime of solar cell arrays for space use, a program was undertaken to develop radiation-hardened lithium-doped silicon solar cells. These cells were shown to be significantly more resistant to degradation by ionized particles than the presently used n-p nonlithium-doped silicon solar cells. The results of various analyses performed to develop a more complete understanding of the physics of the interaction among lithium, silicon, oxygen, and radiation-induced defects are presented. A discussion is given of those portions of the previous model of radiation damage annealing which were found to be in error and those portions which were upheld by these extensive investigations.
Berman, P. A.↗
Analysis of the interaction of an electron beam with a solar cell. I. II
The short-circuit current generated by the electron beam of a scanning electron microscope when it impinges on the N-P junction of a solar cell is known to be dependent on the configuration used to investigate the cell's response, and the situation for one specific configuration is analyzed. This configuration is the case in which the highly collimated electron beam strikes the edge of a planar junction a variable distance away from the edge of the depletion layer. An earlier treatment is generalized to encompass the ohmic contact at the back surface. The analysis employing Fourier and Wiener-Hopf techniques shows that it is impractical to determine the bulk diffusion length of a solar cell by a SEM used in the studied configuration unless the ohmic contact is partially removed.
Von Roos, O.↗
Progress toward cascade cells made by OM-VPE
Organometallic Vapor Phase Epitaxy (COM-VPE) was used to make a sophisticated monolithic cascade cell, with a peak AMO efficiency of 16.6%, not corrected for 14% grid coverage. The cell has 9 epitaxial layers. The top cell is 1.35 microns thick with a 0.1 micron thich emitter. Both cells are heteroface n-p structures. The cascade cell uses metal interconnects. Details of growth and processing are described.
Borden, P. G.↗
An EBIC equation for solar cells
When an electron beam of a scanning electron microscope (SEM) impinges on an N-P junction, the generation of electron-hole pairs by impact ionization causes a characteristic short circuit current I(sc) to flow. The I(sc), i.e., EBIC (electron beam induced current) depends strongly on the configuration used to investigate the cell's response. In this paper the case where the plane of the junction is perpendicular to the surface is considered. An EBIC equation amenable to numerical computations is derived as a function of cell thickness, source depth, surface recombination velocity, diffusion length, and distance of the junction to the beam-cell interaction point for a cell with an ohmic contact at its back surface. It is shown that the EBIC equation presented here is more general and easier to use than those previously reported. The effects of source depth, ohmic contact, and diffusion length on the normalized EBIC characteristic are discussed.
Luke, K. L.↗
MOD silver metallization for photovoltaics
Photovoltaic cells require back side metallization and a collector grid system on the front surface. Both front and back surface metallizations should have good adhesion, low contact resistance, low sheet resistance, long term stability, and their deposition methods should not degrade the n-p junction. Advantages and disadvantages of different deposition methods are discussed.
Vest, G. M.↗
SONTRAC: A solar neutron track chamber detector
The recent detection on the solar maximum mission (SMM) satellite of high energy neutrons emitted during large solar flares has provided renewed incentive to design a neutron detector which has the sensitivity, energy resolution, and time resolution to measure the neutron time and energy spectra with sufficient precision to improve our understanding of the basic flare processes. Over the past two decades a variety of neutron detectors has been flown to measure the atmospheric neutron intensity above 10 MeV and to search for solar neutrons. The SONTRAC (Solar Neutron Track Chamber) detector, a new type of neutron detector which utilizes n-p scattering and has a sensitivity 1-3 orders of magnitude greater than previous instruments in the 20-200 MeV range is described. The energy resolution is 1% for neutron kinetic energy, T sub n 50 MeV. When used with a coded aperture mask at 50 m (as would be possible on the space station) an angular resolution of approx. 4 arc sec could be achieved, thereby locating the sites of high energy nuclear interactions with an angular precision comparable to the existing x-ray experiments on SMM. The scintillation chamber is investigated as a track chamber for high energy physics, either by using arrays of scintillating optical fibers or by optical imaging of particle trajectories in a block of scintillator.
Frye, G. M., Jr.↗
High-efficiency AlGaAs-GaAs Cassegrainian concentrator cells
AlGaAs-GaAs heteroface space concentrator solar cells have been fabricated by metalorganic chemical vapor deposition. AMO efficiencies as high as 21.1% have been observed both for p-n and np structures under concentration (90 to 100X) at 25 C. Both cell structures are characterized by high quantum efficiencies and their performances are close to those predicted by a realistic computer model. In agreement with the computer model, the n-p cell exhibits a higher short-circuit current density.
Werthen, J. G.↗
High-efficiency silicon solar cells
Fabrication and characterization of high-efficiency metal insulator, n-p (MINP) cells is described. Particular attention was paid to development of measurement methods for surface recombination and density of surface states. A modified Rosier test structure was used successfully for density of surface states. Silicon oxide and silicon nitride passivants were studied. Heat treatment after plasma enhanced chemical vapor deposition (CVD) of silicon nitride was shown to be beneficial. A more optimum emitter concentration profile was modeled.
Olsen, L. C.↗
Transit time and charge storage measurements in heavily doped emitters
A first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer is reported. The value was obtained by a high-frequency conductance method recently developed and used for low-doped Si. The transit time coupled with the steady-state current enables the determination of the quasi-static charge stored in the emitter and the quasi-static emitter capacitance. Using a transport model, from the measured transit time, the value for the minority-carrier diffusion coefficient and mobility is estimated. The measurements were done using a heavily doped emitter of the Si p(+)-n-p bipolar transistor. The new result indicates that the position-averaged minority-carrier diffusion coefficients may be much smaller than the corresponding majority-carrier values for emitters having a concentration ranging from about 3 x 10 to the 19th per cu cm to 10 to the 20th per cu cm.
Neugroschel, A.↗
High-efficiency GaAs solar concentrator cells for space and terrestrial applications
High-efficiency Al(x)Ga(1-x)As/GaAs heteroface solar concentrator cells have been developed for both space and terrestrial applications. The cells, which were grown using metalorganic chemical vapor deposition, have been fabricated in both the p-n and n-p configurations. Magnesium and zinc are used as p-type dopants, and Se is used as the n-type dopant. The space cells, which are designed for use in a Cassegrainian concentrator operating at 100 suns, AMO, have a circular illuminated area 4 mm in diameter on a 5 mm x 5 mm cell. These cells have exhibited flash-tested efficiencies as high as 23.6 percent at 28 C and 21.6 percent at 80 C. The terrestrial cells have a circular illuminated area 0.2 inches in diameter and are intended for use in a module which operates at 940 suns, AM1.5. These cells have shown a peak efficiency of 26 percent at 753 suns and over 25 percent at greater than 1000 suns.
Hamaker, H. C.↗
FEASIBILITY STUDY TOWARD DEVELOPMENT OF RADIATION RESISTANT SOLAR CELL
Radiation resistant solar cells - n on p cells with base region impurity gradient which accelerates minority carriers toward the junction
IMPURITY↗
Effect of mechanical strain on p-n junctions
Effect of mechanical strain on electrical characteristics of germanium and silicon p-n junction devices
ELECTRIC PROPERTY↗
Annealing of high energy proton damage in silicon.
High energy proton irradiation and annealing of n and p type Si, comparing proton and electron damage
SILICON JUNCTION↗